公开(公告)号：US08134144B2

公开(公告)日：2012-03-13

申请号：US11317746

申请日：2005-12-23

申请人： Yiliang Wu ,  Jessica Sacripante ,  Beng S. Ong ,  Paul Smith

发明人： Yiliang Wu ,  Jessica Sacripante ,  Beng S. Ong ,  Paul Smith

IPC分类号： H01L51/30

CPC分类号： H01L51/0545 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0558 ,  H01L51/107

摘要： There is provided herein a performance-enhancing composition comprising inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. This composition, when applied to a thin-film transistor, such as a bottom-gate thin-film transistor, as an overcoat or top layer, improves the carrier mobility and current on/off ratio of the thin film transistor. Also provided is the thin-film transistor produced utilizing this process and/or composition.

摘要翻译： 本文提供了包含分散在选自聚硅氧烷，聚倍半硅氧烷及其混合物的聚合物中的无机纳米粒子的性能增强组合物。 当作为外涂层或顶层施加到诸如底栅薄膜晶体管的薄膜晶体管时，该组成提高了薄膜晶体管的载流子迁移率和电流导通/截止比。 还提供了利用该方法和/或组合物制造的薄膜晶体管。

公开(公告)号：US08089062B2

公开(公告)日：2012-01-03

申请号：US11087881

申请日：2005-03-23

申请人： Yiliang Wu ,  Beng S. Ong ,  Ping Liu

发明人： Yiliang Wu ,  Beng S. Ong ,  Ping Liu

IPC分类号： H01L35/24 ,  H01L51/00

CPC分类号： H01L51/10 ,  H01L51/0545 ,  H01L51/448 ,  H01L51/5253

摘要： An electronic device comprising: a substrate, an active layer, and an encapsulating layer comprising at least one wax.

摘要翻译： 一种电子设备，包括：基底，活性层和包含至少一种蜡的包封层。

公开(公告)号：US07919573B2

公开(公告)日：2011-04-05

申请号：US11280119

申请日：2005-11-16

申请人： Yuning Li ,  Ping Liu ,  Yiliang Wu ,  Beng S. Ong

发明人： Yuning Li ,  Ping Liu ,  Yiliang Wu ,  Beng S. Ong

IPC分类号： C08G75/06 ,  C08G75/00

CPC分类号： C08G61/126 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

摘要： A polymer comprising one or more types of repeat units, wherein the polymer includes a substituted thieno[3,2-b]thiophene component A and a different component B in the same type of repeat unit or in different types of repeat units, and wherein the polymer excludes a substituted or unsubstituted thieno[2,3-b]thiophene moiety. The polymer can be used as a semiconductor in electronics such as in organic thin film transistors.

公开(公告)号：US07918485B2

公开(公告)日：2011-04-05

申请号：US11563989

申请日：2006-11-28

申请人： Gabriel Iftime ,  Yiliang Wu ,  Paul F. Smith ,  Peter M. Kazmaier ,  Beng S. Ong

发明人： Gabriel Iftime ,  Yiliang Wu ,  Paul F. Smith ,  Peter M. Kazmaier ,  Beng S. Ong

IPC分类号： B42D15/00 ,  B42D1/00 ,  B42D15/10

CPC分类号： B41J29/393 ,  G06K19/067 ,  Y10S283/901

摘要： Disclosed is an item, for example a document, including a substrate having thereon a multiplicity of separate printed markings, wherein the printed markings include both conductive printed markings and substantially non-conductive printed markings. The different conductive and substantially non-conductive regions on the substrate can be detected, for example by measuring the resistance or current of each printed marking. The pattern of different conductive and substantially non-conductive regions can be used as a security pattern of authenticity that cannot be replicated by standard office equipment, and/or can be used to encrypt information in binary code form in the item. A system for forming and detecting the different printed markings is also described.

摘要翻译： 公开了一种物品，例如文件，包括其上具有多个分开的印刷标记的基板，其中印刷的标记包括导电印刷标记和基本不导电的印刷标记。 可以例如通过测量每个印刷标记的电阻或电流来检测衬底上不同的导电和基本不导电的区域。 可以将不同的导电和基本上不导电的区域的图案用作标准办公设备不能复制的真实性的安全模式，和/或可用于加密该项目中二进制代码形式的信息。 还描述了用于形成和检测不同印刷标记的系统。

公开(公告)号：US07790498B2

公开(公告)日：2010-09-07

申请号：US11406619

申请日：2006-04-19

申请人： Yiliang Wu ,  Beng S. Ong

发明人： Yiliang Wu ,  Beng S. Ong

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0558

摘要： A process including: (a) providing a gelable composition comprising a gelable semiconductor polymer and a liquid, wherein the polymer is at a low concentration in the liquid; (b) gelling the gelable composition to result in a gelled composition; (c) breaking the gelled composition to result in a flowable, broken gelled composition, wherein the viscosity of the flowable, broken gelled composition is at least about 10 times greater than the viscosity of the liquid; and (d) liquid depositing the flowable, broken gelled composition.

摘要翻译： 一种方法，包括：（a）提供包含可凝胶化半导体聚合物和液体的可胶凝组合物，其中聚合物在液体中的浓度低; （b）凝胶化组合物凝胶化以产生胶凝组合物; （c）打破凝胶组合物以产生可流动的破碎的凝胶组合物，其中可流动的破碎的凝胶组合物的粘度比液体的粘度至少大约10倍; 和（d）液体沉积可流动的破碎的凝胶组合物。

公开(公告)号：US20100219409A1

公开(公告)日：2010-09-02

申请号：US12783595

申请日：2010-05-20

申请人： Beng S. Ong ,  Ping Liu ,  Lu Jiang ,  Yu Qi ,  Yiliang Wu

发明人： Beng S. Ong ,  Ping Liu ,  Lu Jiang ,  Yu Qi ,  Yiliang Wu

IPC分类号： H01L51/30

CPC分类号： C08G61/126 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

摘要： An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.

摘要翻译： 含有聚噻吩的电子器件，其中R表示侧链，m表示R取代基的数目; A是二价键; x，y和z分别表示在z为0或1的单体链段中的R m取代的噻吩基，未取代的噻吩基和二价键A的数目，n表示聚合物中重复单体链段的数目 或聚合度。

公开(公告)号：US07767999B2

公开(公告)日：2010-08-03

申请号：US11561032

申请日：2006-11-17

申请人： Beng S. Ong ,  Ping Liu ,  Lu Jiang ,  Yu Qi ,  Yiliang Wu

发明人： Beng S. Ong ,  Ping Liu ,  Lu Jiang ,  Yu Qi ,  Yiliang Wu

IPC分类号： H01L35/24

CPC分类号： C08G61/126 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

摘要： An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of Rm substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.

摘要翻译： 含有聚噻吩的电子器件，其中R表示侧链，m表示R取代基的数目; A是二价键; x，y和z分别表示在z为0或1的单体链段中的R m取代的噻吩基，未取代的噻吩基和二价键A的数目，n表示聚合物中重复单体链段的数目 或聚合度。

公开(公告)号：US07755081B2

公开(公告)日：2010-07-13

申请号：US11558015

申请日：2006-11-09

申请人： Yiliang Wu ,  Beng S. Ong ,  Ping Liu

发明人： Yiliang Wu ,  Beng S. Ong ,  Ping Liu

IPC分类号： H01L35/24

CPC分类号： H01L23/5329 ,  H01L51/0036 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A dielectric material prepared from a siloxy/metal oxide hybrid composition, and electronic devices such as thin film transistors comprising such dielectric material are provided herein. The siloxy/metal oxide hybrid composition comprises a siloxy component such as, for example, a siloxane or silsesquioxane. The siloxy/metal oxide hybrid composition is useful for the preparation of dielectric layers for thin film transistors using solution deposition techniques.

摘要翻译： 本文提供由甲硅烷氧基/金属氧化物杂化组合物制备的电介质材料，以及包括这种介电材料的电子器件如薄膜晶体管。 甲硅烷氧基/金属氧化物杂化组合物包含甲硅烷氧基组分，例如硅氧烷或倍半硅氧烷。 甲硅烷氧基/金属氧化物杂化组合物可用于使用溶液沉积技术制备用于薄膜晶体管的电介质层。

公开(公告)号：US07652339B2

公开(公告)日：2010-01-26

申请号：US11697604

申请日：2007-04-06

申请人： Yiliang Wu ,  Beng S. Ong ,  Alphonsus Hon-Chung Ng

发明人： Yiliang Wu ,  Beng S. Ong ,  Alphonsus Hon-Chung Ng

IPC分类号： H01L29/73 ,  H01L29/735 ,  H01L23/31

CPC分类号： H01L51/0504 ,  H01L51/0068 ,  H01L51/0545 ,  H01L51/0562

摘要： An ambipolar transistor, including a p-type semiconductor region and an n-type semiconductor region near the p-type semiconductor region. Also a first terminal and second terminal contact both the p-type semiconductor region and the n-type semiconductor region. Furthermore, the p-type semiconductor region and the n-type semiconductor region substantially do not overlap each other. A method of manufacturing an ambipolar transistor is also disclosed, including forming a p-type semiconductor region, forming an n-type semiconductor region near the p-type semiconductor region, forming a first terminal contacting both the p-type semiconductor region and n-type semiconductor region, forming a second terminal contacting both the p-type semiconductor region and n-type semiconductor region; and wherein the p-type semiconductor region and the n-type semiconductor region substantially do not overlap, and have substantially no interfacial area.

摘要翻译： 一种双极晶体管，包括p型半导体区域和p型半导体区域附近的n型半导体区域。 第一端子和第二端子也接触p型半导体区域和n型半导体区域。 此外，p型半导体区域和n型半导体区域基本上彼此不重叠。 还公开了制造双极晶体管的方法，包括形成p型半导体区域，在p型半导体区域附近形成n型半导体区域，形成与p型半导体区域和n型半导体区域接触的第一端子， 形成与p型半导体区域和n型半导体区域接触的第二端子; 并且其中p型半导体区域和n型半导体区域基本上不重叠，并且基本上没有界面面积。

公开(公告)号：US20090179194A1

公开(公告)日：2009-07-16

申请号：US12014884

申请日：2008-01-16

申请人： Yiliang Wu ,  Beng S. Ong

发明人： Yiliang Wu ,  Beng S. Ong

IPC分类号： H01L51/05 ,  H01L21/31

CPC分类号： H01L51/0529 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/3122 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor has a gate dielectric layer which is formed from a block copolymer. The block copolymer comprises a polar block and a nonpolar block. The resulting dielectric layer has good adhesion to the gate electrode and good compatibility with the semiconducting layer.

摘要翻译： 有机薄膜晶体管具有由嵌段共聚物形成的栅极电介质层。 嵌段共聚物包括极性嵌段和非极性嵌段。 所得的电介质层对栅电极具有良好的粘合性，并且与半导体层具有良好的相容性。