公开(公告)号：US09911616B2

公开(公告)日：2018-03-06

申请号：US14770378

申请日：2014-02-25

Applicant: Soitec

Inventor： Oleg Kononchuk

IPC: H01L21/3065 ,  H01L21/02 ,  B23K26/12 ,  H05K3/00 ,  H01L21/268 ,  H01L21/302

CPC classification number: H01L21/3065 ,  B23K26/126 ,  H01L21/02488 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/268 ,  H01L21/302 ,  H05K3/0026

Abstract: The disclosure relates to a process for treating a structure, the structure comprising, from its back side to its front side, a carrier substrate, an insulating layer and a useful layer, the useful layer having a free surface, the structure being placed in an atmosphere containing chemical species, the chemical species being capable of reacting chemically with the useful layer. This treatment process is noteworthy in that the useful layer is heated by a pulsed laser beam, the beam sweeping the free surface, the wavelength of the beam differing by, at most, plus or minus 15 nm from a central wavelength, the central wavelength being chosen so that the sensitivity of the reflectivity of the structure relative to the insulating layer is zero.

公开(公告)号：US20160056052A1

公开(公告)日：2016-02-25

申请号：US14779477

申请日：2014-03-03

Applicant: SOITEC

Inventor： Didier Landru ,  Oleg Kononchuk

IPC: H01L21/322 ,  H01L21/324

CPC classification number: H01L21/3225 ,  H01L21/3226 ,  H01L21/324 ,  H01L21/7624

Abstract: This disclosure relates to a method for dissolving a silicon dioxide layer in a structure, including, from the back surface thereof to the front surface thereof, a supporting substrate, the silicon dioxide layer and a semiconductor layer, the dissolution method being implemented in a furnace in which structures are supported on a support, the dissolution method resulting in the diffusion of oxygen atoms included in the silicon dioxide layer through the semiconductor layer and generating volatile products, and the furnace including traps suitable for reacting with the volatile products, so as to reduce the concentration gradient of the volatile products parallel to the front surface of at least one structure.

Abstract translation: 本公开涉及一种将二氧化硅层溶解在结构中的方法，包括从其后表面到其前表面的支撑衬底，二氧化硅层和半导体层，该溶解方法在炉中实施 其中结构支撑在载体上，溶解方法导致二氧化硅层中包含的氧原子扩散通过半导体层并产生挥发性产物，并且该炉包括适于与挥发性产物反应的阱，以便 降低与至少一个结构的前表面平行的挥发性产物的浓度梯度。

公开(公告)号：US20150243549A1

公开(公告)日：2015-08-27

申请号：US14422596

申请日：2013-09-06

Applicant: Soitec

Inventor： Fabrice Letertre ,  Oleg Kononchuk

IPC: H01L21/762 ,  H01L27/12 ,  C30B29/68 ,  B32B7/12 ,  B32B9/04

CPC classification number: H01L21/76251 ,  B32B7/12 ,  B32B9/04 ,  B32B2457/14 ,  C30B29/68 ,  C30B33/00 ,  C30B33/06 ,  H01L21/02002 ,  H01L21/185 ,  H01L27/1203 ,  H01L33/0079 ,  Y10T156/1062 ,  Y10T428/24942

Abstract: The invention relates to a method for fabricating a pseudo-substrate comprising the steps of providing a single crystal ingot, providing a handle substrate, cutting a thin slice from the single crystal ingot, and attaching the thin slice to the handle substrate to form a pseudo-substrate. According to the invention, the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. The invention further relates to a semiconductor structure.

Abstract translation: 本发明涉及一种用于制造伪衬底的方法，包括以下步骤：提供单晶锭，提供手柄衬底，从单晶锭切割薄片，以及将薄片连接到手柄衬底上以形成伪 -基质。 根据本发明，薄片的厚度基本上等于或低于临界厚度，低于该临界厚度，如果单独的切片不再机械地稳定的话。 本发明还涉及半导体结构。