公开(公告)号：US08946703B2

公开(公告)日：2015-02-03

申请号：US14260598

申请日：2014-04-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu Miyairi ,  Kengo Akimoto ,  Yasuo Nakamura

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66 ,  H01L29/26 ,  H01L27/12

CPC classification number: H01L29/78696 ,  H01L21/02323 ,  H01L21/02565 ,  H01L21/32139 ,  H01L21/465 ,  H01L21/467 ,  H01L21/4763 ,  H01L21/47635 ,  H01L27/1225 ,  H01L29/0692 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/263 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

公开(公告)号：US08900917B2

公开(公告)日：2014-12-02

申请号：US13888492

申请日：2013-05-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC: H01L29/02 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/66742 ,  H01L29/78621 ,  H01L29/7869

Abstract: An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. A metal oxide layer having higher carrier concentration than the semiconductor layer is provided intentionally as the buffer layer between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

Abstract translation: 一个实施例是包括交错（顶栅结构）薄膜晶体管，其中使用含有In，Ga和Zn的氧化物半导体膜作为半导体层，并且缓冲层设置在半导体层与源极和漏极之间 层。 有意地提供具有比半导体层更高的载流子浓度的金属氧化物层作为源极和漏极电极层与半导体层之间的缓冲层，从而形成欧姆接触。

公开(公告)号：US08879011B2

公开(公告)日：2014-11-04

申请号：US14196236

申请日：2014-03-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC: G02F1/136 ,  H01L29/66

CPC classification number: H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

Abstract translation: 本发明的目的是提供具有优异显示特性的显示装置，其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。 驱动器电路部分包括驱动电路晶体管，其中使用金属膜形成栅电极层，源电极层和漏电极层，并且使用氧化物半导体形成沟道层。 像素部分包括其中使用氧化物导体形成栅电极层，源电极层和漏电极层的像素晶体管，并且使用氧化物半导体形成半导体层。 像素晶体管使用透光材料形成，因此可以制造具有较高开口率的显示装置。

公开(公告)号：US12206025B2

公开(公告)日：2025-01-21

申请号：US18582949

申请日：2024-02-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hajime Kimura ,  Kengo Akimoto ,  Masashi Tsubuku ,  Toshinari Sasaki

IPC: H01L29/786 ,  G09G3/36 ,  H01L27/12

Abstract: A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.

公开(公告)号：US12068329B2

公开(公告)日：2024-08-20

申请号：US17560479

申请日：2021-12-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hidekazu Miyairi ,  Akiharu Miyanaga ,  Kengo Akimoto ,  Kojiro Shiraishi

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/36 ,  H10K59/121

CPC classification number: H01L27/1225 ,  H01L29/247 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  G02F1/133345 ,  G02F1/133528 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  G09G3/3674 ,  G09G2310/0286 ,  H10K59/1213

Abstract: An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. The buffer layer having higher carrier concentration than the semiconductor layer is provided intentionally between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

公开(公告)号：US12061644B2

公开(公告)日：2024-08-13

申请号：US17439684

申请日：2020-03-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kengo Akimoto ,  Shigeru Tamaki ,  Kunitaka Yamamoto ,  Isamu Shigemori

IPC: G06F16/58 ,  G06F16/53 ,  G06F16/583 ,  G06F40/268 ,  G06N3/045

CPC classification number: G06F16/5866 ,  G06F16/53 ,  G06F16/5846 ,  G06F40/268 ,  G06N3/045

Abstract: An image retrieval system with high retrieval accuracy is provided. The image retrieval system includes a database and a processing portion. The database has a function of storing a plurality of pieces of database image data, and a database tag is linked to each of the plurality of pieces of database image data. The processing portion has a function of obtaining database image feature value data representing a feature value of the database image data for each piece of the database image data. The processing portion has a function of obtaining query image feature value data representing a feature value of the query image data. The processing portion has a function of calculating first similarity of the database image data to the query image data for each piece of the database image data. The processing portion has a function of obtaining a query tag linked to the query image data using some of the database tags.

公开(公告)号：US11594643B2

公开(公告)日：2023-02-28

申请号：US17443541

申请日：2021-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Toshinari Sasaki

IPC: H01L29/78 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L29/66 ,  H01L29/04 ,  H01L29/24 ,  H01L29/423 ,  G02F1/1368 ,  H01L27/32

Abstract: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.

公开(公告)号：US11152397B2

公开(公告)日：2021-10-19

申请号：US16690804

申请日：2019-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L27/12 ,  H01L27/32 ,  G02F1/1362 ,  H01L27/02 ,  H01L29/786

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.

公开(公告)号：US11107928B2

公开(公告)日：2021-08-31

申请号：US16388949

申请日：2019-04-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo Akimoto ,  Toshinari Sasaki

IPC: H01L29/45 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/04 ,  H01L29/24 ,  H01L29/423 ,  G02F1/1368 ,  H01L27/32

Abstract: An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.

公开(公告)号：US10854640B2

公开(公告)日：2020-12-01

申请号：US16672988

申请日：2019-11-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masayuki Sakakura ,  Yoshiaki Oikawa ,  Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba

IPC: H01L27/14 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/1368 ,  G02F1/1343

Abstract: The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.