摘要:
A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.
摘要:
It is an object of the invention to reduce loads of outputs from pixels and suppress a decrease in gain, a reduction in a speed, and the like in a solid-state image pickup device having a circuit for adding (averaging) a plurality of pixel signals. The device has a plurality of pixels which are one-dimensionally or two-dimensionally arranged and output photoelectrically converted signals and a plurality of output lines to which the output signal(s) from one pixel or the pixels arranged on one column is/are outputted. A signal adder circuit for arbitrarily adding the output signals from the plurality of output lines and outputting an addition signal and a signal output circuit for outputting each of the output signals, as individual signals, from the plurality of output lines without adding them are independently provided.
摘要:
An image sensor has a plurality of pixels, each pixel including a photoelectric converter and a pixel circuit for processing signals from the photoelectric converter and outputting processed signals and a scanning circuit, disposed between the photoelectric converters, included in each of at least two adjacent pixels among a plurality of pixels aligned in a single direction. An edge pixel accommodates, in order from an edge of the image sensor toward an interior, a predetermined empty region, a photoelectric converter and a pixel circuit. There is at least one position at which two adjacent pixels, the first of the two pixels accommodating, in order, a pixel circuit, a photoelectric converter and predetermined empty region, the second accommodating, in order, a predetermined empty region, a photoelectric converter and a pixel circuit. The scanning circuit is disposed in the predetermined empty region between the two adjacent pixels.
摘要:
A signal transfer apparatus of high S/N ratio and high read speed suitable for use in photoelectric conversion circuit units with a large pixel count and an imaging apparatus and radiation image pick-up system. The signal transfer apparatus, comprises a plurality of terminals connected to a plurality of signal sources, and a read circuit unit for converting signals received from the terminals into series signals and outputting the resulting series signals. The read circuit unit comprises first operational amplifiers connected to the terminals, and second operational amplifiers for receiving outputs of the first operational amplifiers. And each of the first operational amplifiers comprises an inverting input terminal connected to each of the terminals, an output terminal with an integral capacitor and switch being connected in parallel between it and the inverting input terminal, and a non-inverting input terminal supplied with a reference voltage.
摘要:
With a grooved-inner-surface heat transfer tube, an inner circumferential surface of a metal tube is formed with fins bent at bent portions in a zigzag and extending consecutively around a circumferential direction of the inner circumferential surface, and at at least a part of the bent portions of the fins, the height of the fins is set at 30 to 90% of the height of the fins excluding the bend portions. With such a heat transfer tube, pressure loss can be suppressed while increasing heat exchange performance.
摘要:
A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
摘要:
A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.
摘要:
[Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed.[Solving Means] The method of manufacturing the variable resistance element according to an embodiment of the present invention includes a step of forming a first metal oxide having a first resistivity and a step of forming a second metal oxide having a second resistivity different from the first resistivity. The first metal oxide is formed on a substrate by sputtering, while sputtering a first target made of an oxide of metal, a second target made of the metal with a first power. The second metal oxide layer is formed on the first metal oxide layer by sputtering the second target with a second power different from the first power while sputtering the first target.
摘要:
A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are arranged, wherein the pixel array has a region formed from one of an electrical conductor and a semiconductor to which a fixed electric potential is supplied, each pixel includes a photoelectric converter, a charge-voltage converter which converts charges generated by the photoelectric converter into a voltage, and an amplification unit which amplifies a signal generated by the charge-voltage converter by a positive gain and outputs the amplified signal to an output line, and the output line comprising a shielding portion arranged to shield at least part of the charge-voltage converter with respect to the region.
摘要:
A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are arranged, wherein the pixel array has a region formed from one of an electrical conductor and a semiconductor to which a fixed electric potential is supplied, each pixel includes a photoelectric converter, a charge-voltage converter which converts charges generated by the photoelectric converter into a voltage, and an amplification unit which amplifies a signal generated by the charge-voltage converter by a positive gain and outputs the amplified signal to an output line, and the output line comprising a shielding portion arranged to shield at least part of the charge-voltage converter with respect to the region.