公开(公告)号：US09269903B2

公开(公告)日：2016-02-23

申请号：US14122966

申请日：2012-06-07

申请人： Yutaka Nishioka ,  Kazumasa Horita ,  Natsuki Fukuda ,  Shin Kikuchi ,  Youhei Ogawa ,  Koukou Suu

发明人： Yutaka Nishioka ,  Kazumasa Horita ,  Natsuki Fukuda ,  Shin Kikuchi ,  Youhei Ogawa ,  Koukou Suu

IPC分类号： C23C14/24 ,  H01L45/00 ,  C23C14/54 ,  C23C14/08 ,  C23C14/34 ,  H01J37/34 ,  H01L27/10

CPC分类号： H01L45/1625 ,  C23C14/08 ,  C23C14/3464 ,  C23C14/3492 ,  C23C14/542 ,  C23C14/548 ,  H01J37/34 ,  H01J37/3426 ,  H01J37/3429 ,  H01L27/101 ,  H01L45/04 ,  H01L45/146

摘要： [Object] To provide a method and an apparatus for manufacturing a variable resistance element by which a metal oxide layer having a desired resistivity can be precisely formed.[Solving Means] The method of manufacturing the variable resistance element according to an embodiment of the present invention includes a step of forming a first metal oxide having a first resistivity and a step of forming a second metal oxide having a second resistivity different from the first resistivity. The first metal oxide is formed on a substrate by sputtering, while sputtering a first target made of an oxide of metal, a second target made of the metal with a first power. The second metal oxide layer is formed on the first metal oxide layer by sputtering the second target with a second power different from the first power while sputtering the first target.

摘要翻译： 提供一种用于制造可变电阻元件的方法和装置，通过该方法和装置可以精确地形成具有所需电阻率的金属氧化物层。 本发明的实施方式的可变电阻元件的制造方法包括：形成具有第一电阻率的第一金属氧化物和形成具有与第一电阻率不同的第二电阻率的第二金属氧化物的工序的工序; 电阻率。 第一金属氧化物通过溅射形成在基板上，同时溅射由金属氧化物制成的第一靶，以第一功率由金属制成的第二靶。 通过在溅射第一靶的同时以不同于第一功率的第二功率溅射第二靶，在第一金属氧化物层上形成第二金属氧化物层。

公开(公告)号：US20120288121A1

公开(公告)日：2012-11-15

申请号：US13467605

申请日：2012-05-09

申请人： Machiko MATSUI ,  Nobutaka MIYAUCHI ,  Masanobu MAEDA ,  Masahiko KUBO ,  Nahoko KAWAMURA ,  Fumitake NAKAMURA ,  Hideto SAITOH ,  Hiroyuki KUBOTA ,  Masayuki TAKAOKA ,  Masanobu WASHIO ,  Yutaka NISHIOKA ,  Osamu YASUTAKE

发明人： Machiko MATSUI ,  Nobutaka MIYAUCHI ,  Masanobu MAEDA ,  Masahiko KUBO ,  Nahoko KAWAMURA ,  Fumitake NAKAMURA ,  Hideto SAITOH ,  Hiroyuki KUBOTA ,  Masayuki TAKAOKA ,  Masanobu WASHIO ,  Yutaka NISHIOKA ,  Osamu YASUTAKE

IPC分类号： H03G3/20

CPC分类号： H03G3/3089 ,  H03G3/3005

摘要： A DSP performs a sound volume adjustment processing that adjusts a playback sound volume in accordance with a signal level of acoustic data in acoustic contents. Further, when the DSP detects that the acoustic data is switched, the DSP initializes the adjustment to perform a reset processing that performs adjustment in accordance with the acoustic data which is a new playback target. When the changing instruction of the playback position of the acoustic data is accepted, an audio microcomputer instructs the DSP to perform the reset processing.

摘要翻译： DSP执行音量调整处理，其根据声学内容中的声学数据的信号电平来调节回放音量。 此外，当DSP检测到声学数据被切换时，DSP初始化调整以执行根据作为新的回放目标的声学数据进行调整的复位处理。 当声音数据的播放位置的改变指令被接受时，音频微型计算机指示DSP执行复位处理。

公开(公告)号：US20100000673A1

公开(公告)日：2010-01-07

申请号：US12376073

申请日：2007-07-31

申请人： Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Isao Kimura ,  Shin Kikuchi ,  Takakazu Yamada ,  Kuokou Suu

发明人： Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Isao Kimura ,  Shin Kikuchi ,  Takakazu Yamada ,  Kuokou Suu

IPC分类号： B32B38/00 ,  B05D5/12 ,  C23C16/44

CPC分类号： H01L21/31691 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/787 ,  C23C16/02 ,  C23C16/409 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02271 ,  H01L28/55 ,  H01L28/65

摘要： A film forming method in which a crystalline film having PZT (111) as a principal component thereof is laminated on a foundation film having a (111) oriented noble metal as a principal component thereof, the method including the steps of: forming an oxide film whose interplanar spacing is closer to the PZT (111) than to the noble metal, on a surface of the foundation film; and forming the crystalline film on the surface of the foundation film by an MOCVD method.

摘要翻译： 将具有PZT（111）作为其主要成分的结晶膜层压在具有（111）取向的贵金属作为其主要成分的基础膜上的成膜方法，该方法包括以下步骤：形成氧化膜 其基底膜的表面上的平面间距比贵金属更接近PZT（111）; 并通过MOCVD法在基膜的表面上形成结晶膜。

公开(公告)号：US20090311417A1

公开(公告)日：2009-12-17

申请号：US12376038

申请日：2007-07-31

申请人： Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Isao Kimura ,  Shin Kikuchi ,  Takakazu Yamada ,  Koukou Suu

发明人： Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Isao Kimura ,  Shin Kikuchi ,  Takakazu Yamada ,  Koukou Suu

IPC分类号： C23C16/18

CPC分类号： H01L21/31691 ,  C04B35/491 ,  C04B2235/441 ,  C04B2235/787 ,  H01G4/1245 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02271 ,  H01L28/55 ,  H01L28/65 ,  H01L41/1876 ,  H01L41/316

摘要： A film forming method in which crystalline film having PZT (001) or PZT (100) as a principal component thereof is laminated on a foundation film having a (111) oriented noble metal as a principal component thereof, the method including the steps of: performing reduction treatment on a surface of the foundation film; and forming the crystalline film by an MOCVD method on the surface of the foundation film.

摘要翻译： 将具有PZT（001）或PZT（100）作为其主要成分的结晶膜层叠在具有（111）取向的贵金属作为其主要成分的基础膜上的成膜方法，该方法包括以下步骤： 在基膜的表面进行还原处理; 并通过MOCVD法在基膜的表面上形成结晶膜。

公开(公告)号：US20090294280A1

公开(公告)日：2009-12-03

申请号：US12522356

申请日：2007-12-20

申请人： Isao Kimura ,  Takehito Jinbo ,  Shin Kikuchi ,  Yutaka Nishioka ,  Koukou Suu

发明人： Isao Kimura ,  Takehito Jinbo ,  Shin Kikuchi ,  Yutaka Nishioka ,  Koukou Suu

IPC分类号： C23C14/34

CPC分类号： C23C14/568 ,  C23C14/025 ,  C23C14/042 ,  C23C14/088 ,  C23C14/352 ,  C23C28/322 ,  C23C28/3455 ,  H01G4/1227 ,  H01G4/1245 ,  H01G4/33 ,  H01G7/06 ,  H01L21/02197 ,  H01L21/31691 ,  H01L41/316

摘要： A multilayer film formation method enables the formation of a multilayer including a complex oxide layer and having the desired shape of an element without performing an etching process. The method positions a first mask (30A) above a substrate (S), forms an adhesion layer (36) and a lower electrode layer (37) on the substrate with the first mask by sputtering an adhesion layer target (T1) and a lower electrode layer target (T2), positions a second mask (30B) formed from a ceramic material above the lower electrode layer, superimposes a complex oxide layer (38) on the lower electrode layer with the second mask by sputtering an oxide layer target (T3), positions a third mask (30C) above the complex oxide layer, and superimposes an upper electrode layer (39) on the complex oxide layer with the third mask by sputtering an upper electrode layer target (T4).

摘要翻译： 多层膜形成方法能够形成包括复合氧化物层并且具有所需形状的元件的多层而不进行蚀刻工艺。 该方法将第一掩模（30A）定位在衬底（S）上方，通过溅射粘附层靶（T1）和下层（T1），在第一掩模上在衬底上形成粘合层（36）和下电极层（37） 将由陶瓷材料形成的第二掩模（30B）定位在下部电极层的上方，通过溅射氧化物层靶（T3）将复合氧化物层（38）与第二掩模重叠在下部电极层上 ），在复合氧化物层上方设置第三掩模（30C），并通过溅射上电极层靶（T4）将上电极层（39）与第三掩模叠加在复合氧化物层上。

公开(公告)号：US08262798B2

公开(公告)日：2012-09-11

申请号：US10911639

申请日：2004-08-05

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/52 ,  C23C16/455 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4557 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provides a shower head whose temperature can be controlled in consideration of the film-forming conditions selected and a thin film-manufacturing device which permits the stable and continuous formation of thin films including only a trace amount of particles while reproducing a good film thickness distribution and compositional distribution, and a high film-forming rate and which is excellent in the productivity and the mass-producing ability as well as a method for the preparation of such a film. The shower head is so designed that the shower head structure is incorporated into an upper cap of a film-forming vessel, that a heat-exchange means is disposed in the upper cap to thus control the temperature of the upper cap and to in turn allow heat-exchange to occur at the contact surface between a disk-like shower plate constituting the shower head surface and the upper cap and that the temperature of the shower head can be controlled in consideration of the film-forming conditions selected. A thin film-manufacturing device is equipped with the shower head in its film-forming vessel and a thin film is prepared using the device.

摘要翻译： 本发明提供了一种喷淋头，其温度可以根据所选择的成膜条件进行控制，薄膜制造装置允许稳定且连续地形成仅包含微量颗粒的薄膜，同时再现良好的 膜厚分布和组成分布，成膜率高，生产性和批量生产能力优异的方法以及制备这种膜的方法。 淋浴头被设计成将喷头结构结合到成膜容器的上盖中，将热交换装置设置在上盖中，从而控制上盖的温度，并且进而允许 考虑到所选择的成膜条件，可以在构成淋浴头表面的盘形淋浴板和上盖之间的接触表面处发生热交换，并且可以控制喷淋头的温度。 薄膜制造装置在其成膜容器中配备有喷头，并且使用该装置制备薄膜。

公开(公告)号：US20100038234A1

公开(公告)日：2010-02-18

申请号：US12519712

申请日：2007-12-17

申请人： Isao Kimura ,  Takehito Jinbo ,  Shin Kikuchi ,  Yutaka Nishioka ,  Koukou Suu

发明人： Isao Kimura ,  Takehito Jinbo ,  Shin Kikuchi ,  Yutaka Nishioka ,  Koukou Suu

IPC分类号： C23C14/34 ,  C23C14/06

CPC分类号： H01L41/083 ,  C23C14/0036 ,  C23C14/088 ,  H01L41/1876 ,  H01L41/316

摘要： A multilayer thin film formation method and a multilayer thin film formation apparatus that improve dielectric characteristics and piezoelectric characteristics of a thin film formed from a lead-based perovskite complex oxide. The multilayer thin film formation method includes formation of a lower electrode layer (32b) containing a noble metal above a substrate (S) by sputtering a lower electrode layer target (TG2), and superposing a lead-based complex oxide layer (33) on the lower electrode layer (32b) by sputtering an oxide layer target (TG3) containing lead. The lower electrode layer (32b) has a thickness restricted to 10 to 30 nm, and the lead-based complex oxide layer (33) has a thickness restricted to 0.2 and 5.0 μm.

摘要翻译： 一种提高由铅系钙钛矿复合氧化物形成的薄膜的介电特性和压电特性的多层薄膜形成方法和多层薄膜形成装置。 多层薄膜形成方法包括通过溅射下电极层靶（TG2），在基底（S）上方形成含有贵金属的下电极层（32b），并将引线基复合氧化物层（33）叠加在 通过溅射含有铅的氧化物层靶（TG3）来形成下电极层（32b）。 下部电极层（32b）的厚度为10〜30nm，铅系复合氧化物层（33）的厚度为0.2〜5.0μm。

公开(公告)号：US20050059246A1

公开(公告)日：2005-03-17

申请号：US10910807

申请日：2004-08-04

申请人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

发明人： Takakazu Yamada ,  Takeshi Masuda ,  Masahiko Kajinuma ,  Yutaka Nishioka ,  Masaki Uematsu ,  Koukou Suu

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/302 ,  H01L21/461

CPC分类号： C23C16/4557 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/45572

摘要： The present invention herein provide a thin film-manufacturing device and a thin film-manufacturing method which are excellent in the mass-production ability and productivity, which permit the stable and continuous production of films over a long period of time while reproducing a good film thickness distribution, a good compositional distribution and a high film-forming rate and controlling the number of particles generated during the film-formation to a lower level. The device is one serving as a CVD device in which a film-forming gas is introduced into a reaction chamber from the upper portion of the chamber serving as a reaction space, through a shower head and a film is formed on a heated substrate, wherein the device is so designed that the upper reaction space is constructed by the substrate-supporting stage which is free of any rotational motion or free of any elevating motion, the shower head and a deposition-inhibitory plate, that the substrate-supporting stage and the deposition-inhibitory plate are so arranged as to form, between them, a concentric gap or interstice serving as a gas-exhaust path through which an inert gas can flow from the upper portion of the gas-exhaust path along the deposition-inhibitory plate and that a lower space is formed on the secondary side of the gas-exhaust path.

摘要翻译： 本发明提供一种薄膜制造装置和薄膜制造方法，其制造能力和生产率优异，能够长时间稳定且连续地生产薄膜，同时再生良好的薄膜 厚度分布，良好的组成分布和高成膜速率，并且将成膜期间产生的颗粒数控制到更低的水平。 该装置是用作CVD装置的装置，其中成膜气体通过喷淋头从用作反应空间的室的上部引入反应室，并且在加热的基板上形成膜，其中 该设备被设计成使得上反应空间由没有任何旋转运动或没有任何升高运动的基板支撑台，淋浴喷头和防沉积板构成，基板支撑台和 沉积抑制板被布置成在它们之间形成用作气体排出路径的同心间隙或间隙，惰性气体可以沿着沉积抑制板从气体排出路径的上部流动， 在排气路径的次级侧形成较低的空间。

公开(公告)号：US06635288B2

公开(公告)日：2003-10-21

申请号：US09796360

申请日：2001-03-02

申请人： Yutaka Nishioka

发明人： Yutaka Nishioka

IPC分类号： A61K3578

CPC分类号： A61K36/73

摘要： A composition containing an extract from loquat seeds which is effective for suppressing cellular fibrousing. The composition is based on an extract from loquat seeds which can be obtained by immersing grains obtained by pulverizing loquat seeds, immersing them in at least one solvent selected from a group comprising ethanol, methanol, water and hexane, and separating a supernatant therefrom.

摘要翻译： 含有lo杷种子提取物的组合物，其有效抑制细胞纤维化。 该组合物是基于lo杷种子的提取物，其可通过将通过粉碎lo杷种子获得的颗粒浸入其中，将其浸入至少一种选自乙醇，甲醇，水和己烷的溶剂中并从其中分离上清液而获得。

公开(公告)号：US09281477B2

公开(公告)日：2016-03-08

申请号：US14125254

申请日：2012-06-17

申请人： Yutaka Nishioka ,  Kazumasa Horita ,  Natsuki Fukuda ,  Shin Kikuchi ,  Koukou Suu

发明人： Yutaka Nishioka ,  Kazumasa Horita ,  Natsuki Fukuda ,  Shin Kikuchi ,  Koukou Suu

IPC分类号： H01L45/00 ,  G11C11/56 ,  G11C13/00

CPC分类号： H01L45/1253 ,  G11C11/5614 ,  G11C13/0007 ,  G11C2213/15 ,  G11C2213/56 ,  H01L45/08 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1675

摘要： To provide a resistance change element which does not require a forming process and enables reduction of power consumption and miniaturization of the element, and to provide a method for producing it. A resistance change element 1 according to an embodiment of the present invention includes a bottom electrode layer 3, a top electrode layer 5 and an oxide semiconductor layer 4. The oxide semiconductor layer 4 has a first metal oxide layer 41 and a second metal oxide layer 42. The first metal oxide layer 41 is formed between the bottom electrode layer 3 and the top electrode layer 5, and in ohmic contact with the bottom electrode layer 3. The second metal oxide layer 42 is formed between the first metal oxide layer 41 and the top electrode layer 5, and in ohmic contact with the top electrode layer 5.

摘要翻译： 为了提供不需要成形工艺的电阻变化元件，并且能够降低功耗并且元件的小型化，并提供其制造方法。 根据本发明实施例的电阻变化元件1包括底电极层3，顶电极层5和氧化物半导体层4.氧化物半导体层4具有第一金属氧化物层41和第二金属氧化物层 第一金属氧化物层41形成在底电极层3和顶电极层5之间，并与底电极层3欧姆接触。第二金属氧化物层42形成在第一金属氧化物层41和 顶部电极层5，并与顶部电极层5欧姆接触。