Abstract:
The object of the present invention is to provide a method for solving the problem of surface damage due to gallium ion irradiation that poses a problem when carrying out mask repair using currently established FIB techniques, and the problem of residual gallium, and to provide a device realizing this method. The device of the present invention has an electron beam lens barrel that can carry out processing, as well as an FIB lens barrel, provided inside the same sample chamber, which means that a mask repair method of the present invention, in correction processing to remove redundant sections such as a mask opaque defect, phase shift film bump defect or a glass substrate cut remnant defect, comprises a step of coarse correction by etching using a focused ion beam and a step of finishing processing using an electron beam, to remove surface damage due to gallium irradiation, and residual gallium.
Abstract:
A composite system of a scanning electron microscope (SEM) and a focused ion beam apparatus (FIB) has an FIB lens barrel for irradiating a focused ion beam to an irradiating position on a sample surface and an SEM lens barrel for observing a machining state of the machined sample surface. The FIB lens barrel has an aperture defining at least one slit of a preselected pattern so that during irradiation of the sample surface with the focused ion beam, the aperture is irradiated by the focused ion beam with a width covering the slit to thereby machine the sample surface in the form of the preselected pattern of the slit.
Abstract:
A thin specimen producing method acquires a work amount in a 1-line scan by an FIB under a predetermined condition, measures a remaining work width of a thin film on an upper surface of a specimen by a microscopic length-measuring function, determines a required number of scan lines of work to reach a predetermined width by calculation, and executes a work to obtain a set thickness. The work amount in a one-line scan by the FIB under the predetermined condition is determined by working the specimen in scans of plural lines, measuring the etched dimension by the microscopic length-measuring function, and calculating an average work amount per one-line scan.
Abstract:
In a charged particle microscope equipped with a sample stage having an inclination function, the invention provides a construction that prevents inclination driving of the sample stage from affecting other peripheral devices to be additionally installed such as an optical microscope. In the charged particle microscope according to the invention, a sample stage having an inclination mechanism includes a rotation support portion of the inclination mechanism on sidewalls of a vacuum chamber, and at least a detection portion of other peripheral devices additionally installed such as (1) an optical microscope, (2) a laser scattering microscope and (3) an optical height detection system is fitted to the rotation support portion inside the chamber in such a fashion as to be capable of moving with a rotary shaft of the inclination mechanism, and members that cannot be arranged in vacuum are installed outside the chamber.
Abstract:
A displacement detection mechanism for a vibrationally driven cantilever includes a vibration frequency detector comprised of an LC resonator that detects a change of capacitance between the cantilever and a sample surface due to a change of vibration of the cantilever, and an F-V converter or an FM demodulator that detects a voltage based on the vibration frequency, whereby displacement of the cantilever can be detected. The displacement detection mechanism can be used in a scanning probe microscope to perform shape measurement and physical property measurement without the presence of light.
Abstract:
Provided are an X-ray analyzer and a mapping method for an X-ray analysis which, in a inspection for a harmful substance contained in, for example, a material or a composite electronic component, enable determination as to whether a sample is normal or abnormal to be performed visually based on an image obtained by the X-ray mapping analysis. In the X-ray analyzer, an X-ray mapping image of a sample which is confirmed to be normal in advance is obtained as a reference mapping image. A mapping analysis is performed on a inspection sample. A difference from the reference mapping image is obtained for each pixel, to thereby display a difference mapping image. A region in which the amount of specific element is larger than a reference amount is displayed with high brightness, and hence an abnormal portion may be easily found.
Abstract:
A method of measuring vibration characteristics of a cantilever in a scanning probe microscope (SPM). An excitation signal is generated by a forward and backward frequency sweep signal in a frequency range including a resonance frequency of the cantilever. The cantilever is vibrated by supplying the excitation signal to a vibrating portion of the cantilever. The largest amplitude of a displacement of the cantilever in a forward path and in a backward path is directly measured, and an intermediate value of a frequency between frequencies measured on the basis of the directly measured largest amplitude of the displacement of the cantilever is detected as the resonance frequency of the cantilever.
Abstract:
To prevent erroneous detection in detecting a foreign matter, which is caused by a change in distance between a sample and an X-ray detector, provided is an X-ray transmission inspection apparatus including an X-ray tube (11) that irradiates an inspection sample element with an X-ray, an X-ray detector (13) that detects a transmission X-ray when the X-ray is transmitted through a sample, an operation portion (17) that obtains a contrast image from a transmission image of a transmission X-ray, a sensor that calculates a distance between the sample and the detector, and a mechanism that adjusts the position of the X-ray detector, in which an X-ray transmission image is picked up while the distance between the sample and the X-ray detector is kept constant.
Abstract:
The crystal structure of the emitter can be accurately grasped from a FIM image without being influenced by disturbances, such as contamination, and even if the rearrangement of atoms has been performed, whether or not the crystal structure of the emitter has returned to the original state can also be accurately determined. There is a provided a focused ion beam apparatus including an emitter 10, a gas source 11 which supplies gas G2, a cooling unit 12 which cools the emitter, a heating unit 13 which heats the tip of the emitter, an extraction power source unit 15 which applies an extraction voltage to ionize the gas into gas ions at the tip of the emitter, and then extract the gas ions, a beam optical system 16 which makes the extracted gas ions into a focused ion beam (FIB), and then radiates the focused ion beam onto a sample S, an image acquiring mechanism 17 which acquires a FIM image of the tip of the emitter, and a control unit 7 having a display unit and a storage unit 7b. A guide which displays an ideal crystal structure of the tip of the emitter is stored in advance in the storage unit. The control unit is enabled to display the guide in the state of overlapping the acquired FIM image on the display unit.
Abstract:
A defect repair apparatus for an EUV mask has an ion beam column that scans and irradiates the EUV mask with a focused hydrogen ion beam such that no region of the EUV mask receives an amount of beam irradiation exceeding 4×1016 ions/cm2. The ion beam column comprises a gas field ion source having an emitter with a pointed tip end that emits hydrogen ions that form the hydrogen ion beam, and an ion optical system that focuses and scans the hydrogen ion beam onto the EUV mask. A detector detects secondary charged particles generated from the EUV mask when irradiated with the hydrogen ion beam, and an image forming section forms and displays an observation image of the EUV mask on the basis of an output signal from the detector so that a defect in the EUV mask and the progress of the defect repair can be observed.
Abstract translation:用于EUV掩模的缺陷修复装置具有离子束柱,其利用聚焦的氢离子束扫描和照射EUV掩模,使得EUV掩模的区域不会接收超过4×1016个离子/ cm 2的光束照射量。 离子束柱包括气体离子源,其具有发射体,其具有发射形成氢离子束的氢离子的尖端,以及将氢离子束聚焦并扫描到EUV掩模上的离子光学系统。 当用氢离子束照射时,检测器检测从EUV掩模产生的二次带电粒子,并且图像形成部分基于来自检测器的输出信号形成并显示EUV掩模的观察图像,使得在 可以观察到EUV面罩和缺陷修复的进展。