Abstract:
A getter device capable of being re-activated as required and arranged in a narrow space in an envelope. The getter is arranged in a layer-like manner in an envelope of an electronic element to provide, in the envelope, a film-like getter for keeping an interior of the envelope at a vacuum. Electrons emitted from an electron feed section are impinged on the getter to activate it. The getter activated adsorbs thereon gas in an envelope of an image display device.
Abstract:
A conductor array (100), for addressing a plurality of field emitters (130), including a plurality of cathode conductors (106, 108, 110) having conductive cathode connectors (126), a plurality of gate conductors (104) having a plurality of conductive gate connectors (116, 118, 120), and a plurality of fusible links (134, 138), which are located at a plurality of overlapping regions (103) of the cathode conductors (106, 108, 110) and the gate conductors (104) and which can be electrically severed to isolate electrical shorts existing at the overlapping regions (103).
Abstract:
The present invention provides methods and apparatus for making enhanced field emitters by coating particulate substrates with low voltage emissive material such as defect-rich diamond. These methods permit the advantageous, low-cost combination of low voltage emission with sharp-featured geometry.
Abstract:
A field emission device (100) uses single crystals in order to eliminate grain boundaries within some or all of the electrodes (103, 104, and 205). The elimination of grain boundaries reduces susceptibility to damage, improves stability of the device (100), and improves uniformity and reproducibility among devices. In a preferred embodiment, the emitter and gate electrodes (103 and 104 respectively) are formed from a single crystal thin film (302). In other embodiments, other structures are employed wherein one or more of the electrodes (103, 104, and 205) are formed from single crystals.
Abstract:
Gated electron emitters are fabricated by processes in which charged particles are passed through a track layer (24, 48, or 144) to form charged-particle tracks (26.sub.1, 50.sub.1, or 146.sub.1). The track layer is etched along the tracks to create open spaces (28.sub.1, 52.sub.1, or 148.sub.1). Electron-emissive elements (30 or 142D) can then be formed at locations respectively centered on the open spaces after which a patterned gate layer (34B, 40B, or 158C) is provided. Alternatively, the open spaces in the track layer can be employed to etch corresponding apertures (54.sub.1) through an underlying non-insulating layer (46) which typically serves as the gate layer. An etch is performed through the apertures to form dielectric open spaces (56.sub.1, 96.sub.1, or 114.sub.1) in an insulating layer (24) that lies below the non-insulating layer. Electron-emissive elements (30B, 30/88D.sub.1, 98/102.sub.1, or 118.sub.1) can subsequently be provided, typically in the dielectric open spaces.
Abstract:
A gated area field emitter is fabricated according to a process in which charged-particle tracks are utilized in creating small electron-emissive elements self-aligned to corresponding gate openings in the gate electrode. The electron-emissive elements can have various shapes, including (a) a pedestal, typically a filament, having a pointed tip, (b) a cone, and (c) a combination of a pedestal and an overlying cone whose base diameter is greater than the pedestal's diameter. Each electron-emissive element can be formed as a highly resistive portion and an overlying electron-emissive portion.
Abstract:
A gated electron-emitting device contains a multiplicity of electron-emissive elements, each formed with a pedestal (98) and an overlying cone (94.sub.1). In each electron-emissive element, the base diameter of the cone is greater than the element, the base diameter of the cone is greater than the diameter of the pedestal. With the pedestal being electrically conductive, the cone may be electrically resistive. Alternatively, each electron-emissive element can be an elongated element (30B) that reaches a maximum diameter at a point between, and spaced apart from, both ends of the element.
Abstract:
A method for fabricating high aspect ratio spacers for a field emission display is described. An array of field emission microtips is formed over a substrate. A layer of lithographic material is formed over the array of field emission microtips. Openings are formed in the layer of lithographic material. The openings may be formed by a plasma etch with oxygen, or by x-ray lithography. A non-outgassing material is formed over the surface of the layer of lithographic material, including in the openings. The openings are filled with a spacer material, the spacer material being a conductive material, an insulator, or, preferably, a combination thereof. Lastly, the layer of lithographic material and the non-outgassing material are removed.
Abstract:
Methods are available for making, and resultant structures of, a field emission display with soft luminescence and a comfortable image for a viewer of the display. The field emission display is formed with a baseplate and an opposing face plate. Field emission microtips are formed in openings in a conductive and insulating layer on the baseplate. An anode is formed on either the faceplate, or on the conductive layer surrounding each opening. Phosphorescent material is formed over the anode. A blocking layer is formed between the phosphor and the faceplate, such that during operation of the display direct light emission from the phosphor is blocked, resulting in indirect phosphorescence and a more comfortable display image. An optional reflective layer may be added over the conductive layer to increase phosphorescence.
Abstract:
Cathodoluminescent display apparatus employing an electron source including a plurality of diamond crystallites. Image display apparatus employing an array of picture elements, each picture element having associated therewith an electron source including electron emitting diamond crystallites, is realized as a preferred embodiment.