公开(公告)号：US20070131939A1

公开(公告)日：2007-06-14

申请号：US10578477

申请日：2004-11-12

申请人： Shinichi Kohda

发明人： Shinichi Kohda

IPC分类号： H01L33/00 ,  H01L31/12 ,  H01L27/15 ,  H01L29/26

CPC分类号： H01S5/0201 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32341

摘要： A semiconductor lamination portion (9) including an active layer (4) is formed on a substrate (1). The semiconductor lamination portion is made of, for example, a nitride material having a cleavage plane not parallel to a cleavage plane of the substrate (1) and has a resonance cavity end faces (6) from which a laser beam is emitted. And a metal layer portion (5) is provided between the substrate and the active layer in a vicinity of the resonance cavity end faces. As a result, even if a crack is caused between the substrate and the semiconductor lamination portion, an extension of the crack stops at the metal layer portion, thereby the crack does not reach to the active layer at the resonance cavity end faces, and the cleavage plane free from any crack can be obtained at the resonance cavity end faces. Therefore, as an absorption loss at the resonance cavity end faces is reduced, the semiconductor laser which is driven with low operating current and has high reliability can be obtained.

摘要翻译： 在基板（1）上形成包括有源层（4）的半导体层叠部（9）。 半导体层叠部由例如具有不与基板（1）的解理面平行的解理面的氮化物构成，具有从其射出激光的谐振腔端面（6）。 并且在共振腔端面附近，在基板和有源层之间设置有金属层部分（5）。 结果，即使在基板和半导体层叠部之间产生裂纹，裂纹的延伸在金属层部分停止，因此裂纹在共振腔端面处不到达有源层，并且 可以在谐振腔端面获得没有任何裂纹的裂纹平面。 因此，由于谐振腔端面的吸收损耗减小，所以可以获得以低工作电流驱动且具有高可靠性的半导体激光器。

公开(公告)号：US20070054431A1

公开(公告)日：2007-03-08

申请号：US11500334

申请日：2006-08-08

申请人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/2231

摘要： A substrate with a nitride semiconductor layer is cleaved to form resonator end faces, on which a coating film is formed so as to make a nitride semiconductor laser bar. This is divided into nitride semiconductor laser elements. Prior to forming the coating film on the resonator end face, the resonator end face is exposed to a plasma atmosphere generated from the gas containing nitrogen gas. When a ratio of nitrogen to gallium in the surface of the resonator end face before the exposure is represented by “a”, an average value of ratios of nitrogen to gallium inside from the surface of the resonator end face before the exposure is represented by “b”, a ratio of nitrogen to gallium in the surface of the resonator end face after the exposure to the first plasma atmosphere is represented by “d”, and an average value of ratios of nitrogen to gallium inside from the surface of the resonator end face after the exposure is represented by “e”, the value “g” that is expressed by g=(b·d)/(a·e) is set to a value that satisfies g≧0.8.

摘要翻译： 具有氮化物半导体层的衬底被切割以形成谐振器端面，在其上形成涂膜以便形成氮化物半导体激光棒。 这被分为氮化物半导体激光元件。 在共振器端面上形成涂膜之前，共振器端面暴露于由含有氮气的气体产生的等离子体气氛中。 当曝光前共振器端面表面的氮与镓的比例由“a”表示时，曝光前共振器端面的表面内的氮与镓的平均值由“ b“，在暴露于第一等离子体气氛之后，共振器端面的表面中的氮与镓的比率由”d“表示，并且从谐振器端的表面的内部的氮与镓的平均值 曝光后的面由“e”表示，由g =（bd）/（ae）表示的值“g”被设定为满足g> = 0.8的值。

公开(公告)号：US07033852B2

公开(公告)日：2006-04-25

申请号：US10381810

申请日：2001-09-25

申请人： Karl Häusler ,  Nils Kirstaedter

发明人： Karl Häusler ,  Nils Kirstaedter

IPC分类号： H01L21/00 ,  H01S5/00

CPC分类号： H01S5/0281 ,  H01S5/0202 ,  H01S5/0282 ,  H01S5/0425

摘要： A method and device for passivating the resonator end faces, in particular the cleaved edges of semiconductor laser diodes, by high-temperature epitaxy of the quaternary compound semiconductor InxGa1-xAsyP1-y, where (0≦x≦1 and 0≦y≦1). To passivate the InxGa1-xAsyP1-y, an additional passivation layer may be applied in situ. The semiconductor crystal is brought to the temperature required for the epitaxy by being heated. To avoid thermal destruction of the contact metal during the epitaxy, the metal is only deposited after the cleaving operation and the passivation. The deposition of the metal on the passivated laser bar is carried out by means of special equipment that allows deposition of metal on the entire surface of the laser and at the same time prevents vapour deposition on the cleaved edges. The method and device can be applied to the production of high-power laser diodes.

摘要翻译： 通过四元化合物半导体的高温外延钝化谐振器端面，特别是半导体激光二极管的切割边缘的方法和装置。 其中（0 <= x <= 1且0 <= y <= 1）。 为了使钝化层钝化，可以将附加的钝化层（例如， 原位应用 通过加热使半导体晶体达到外延所需的温度。 为了在外延期间避免接触金属的热破坏，金属仅在分裂操作和钝化之后沉积。 金属在钝化激光棒上的沉积是通过特殊的设备进行的，这些设备允许金属沉积在激光的整个表面上，同时防止在切割边缘上的气相沉积。 该方法和装置可应用于大功率激光二极管的生产。

公开(公告)号：US20050093009A1

公开(公告)日：2005-05-05

申请号：US10975884

申请日：2004-10-28

申请人： Masaru Kuramoto

发明人： Masaru Kuramoto

IPC分类号： H01L21/301 ,  H01L21/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/223 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

CPC分类号： B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/2231 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/34333 ,  H01S2304/12

摘要： To provide a semiconductor device that excels in the manufacturing efficiency and device reliability, and a method for the manufacture thereof. The side of a device is composed of scribed grooves 13 and a cleavage plane 100.

摘要翻译： 提供一种在制造效率和器件可靠性方面优异的半导体器件及其制造方法。 装置的侧面由划线槽13和解理面100组成。

公开(公告)号：US06885793B2

公开(公告)日：2005-04-26

申请号：US10458469

申请日：2003-06-10

申请人： Steven Henry Macomber

发明人： Steven Henry Macomber

IPC分类号： G02B6/34 ,  H01S5/02 ,  H01S5/12

CPC分类号： H01S5/12 ,  H01S5/0202

摘要： A wafer that is cleaved to provide a facet for a Fabry-Perot cavity is provided with Bragg gratings whose axes are offset by a small angle from the axis of the Fabry Perot cavity to offset the effect of the randomly uncontrollable location of the cleaved facet on the optical phase of the grating feedback.

摘要翻译： 布拉格光栅被切割以为法布里 - 珀罗腔提供一个刻面的晶片提供了布拉格光栅，其轴线与法布里珀罗腔体的轴线偏移一小角度，以抵消切割面的随机不可控位置的影响 光学相位的光栅反馈。

公开(公告)号：US06865201B2

公开(公告)日：2005-03-08

申请号：US10104931

申请日：2002-03-22

申请人： Shigetoshi Ito ,  Yukio Yamasaki ,  Toshiyuki Kawakami

发明人： Shigetoshi Ito ,  Yukio Yamasaki ,  Toshiyuki Kawakami

IPC分类号： G11B7/125 ,  H01S5/02 ,  H01S5/042 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S5/00 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/0202 ,  H01S5/0421 ,  H01S5/22 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2301/18

摘要： In connection with a nitride semiconductor laser device optimal for example for optical pickup and an optical information reproduction apparatus having superior condensation characteristics, the semiconductor laser device includes a substrate of nitride semiconductor, a lower clad layer of nitride semiconductor stacked thereon, an active layer stacked thereon, an upper clad layer of nitride semiconductor stacked thereon, and a contact layer of AlaInbGa1−a−bN stacked thereon having a lattice constant larger than the substrate of nitride semiconductor, and the device is cleaved and thus divided to have a surface serving as a resonator mirror.

摘要翻译： 关于优选例如光学拾取器的氮化物半导体激光器件和具有优异的冷凝特性的光学信息再现装置，半导体激光器件包括氮化物半导体的衬底，堆叠在其上的氮化物半导体的下部包覆层，堆叠的有源层 在其上层叠有氮化物半导体的上包层，以及其上堆叠有具有大于氮化物半导体衬底的晶格常数的AlInGaGaAs-a-bN的接触层，并且将该器件切割并因此被分割成具有用作 谐振镜。

公开(公告)号：US20040137655A1

公开(公告)日：2004-07-15

申请号：US10751959

申请日：2004-01-07

申请人： PIONEER CORPORATION

发明人： Kiyofumi Chikuma ,  Hiroyuki Ota ,  Toshiyuki Tanaka

IPC分类号： H01L021/00

CPC分类号： H01S5/22 ,  H01L2224/48463 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/32341 ,  H01S2304/04

摘要： A method for fabricating a nitride semiconductor laser device having crystal layers each made of a group III nitride semiconductor (AlxGa1nullx)1nullyInyN (0nullxnull1, 0nullynull1) layered in order on a ground layer (AlxnullGa1nullxnull)1nullynullInynullN (0nullxnullnull1, 0nullynullnull1). The method including a step of forming a plurality of crystal layers each made of group III nitride semiconductor on a ground layer formed on a substrate such as sapphire; a step of applying a light beam from the substrate side toward the interface between the substrate and the ground layer thereby forming the decomposed-matter area of a nitride semiconductor; a step of separating the ground layer carrying the crystal layers from the substrate along the decomposed-matter area; and a step of cleaving the ground layer thereby forming a cleavage plane of the crystal layers.

摘要翻译： 一种用于制造氮化物半导体激光器件的方法，该器件具有各自由III族氮化物半导体（Al x Ga 1-x）1-y In y N（0 <= x <= 1,0 <= y <= 1） 接地层（Al x Ga 1-x'）1-y'In y'N（0 <= x'<= 1,0 <= y'<= 1）。 该方法包括在形成在诸如蓝宝石的衬底上的接地层上形成由III族氮化物半导体制成的多个晶体层的步骤; 从基板侧朝向基板和接地层之间的界面施加光束，从而形成氮化物半导体的分解物区域的步骤; 沿着分解物区域从基板分离携带晶体层的接地层的步骤; 以及切割接地层从而形成晶体层的解理面的步骤。

公开(公告)号：US06737678B2

公开(公告)日：2004-05-18

申请号：US10188369

申请日：2002-07-03

申请人： Toshiyuki Kawakami ,  Yukio Yamasaki ,  Shigetoshi Ito ,  Susumu Omi

发明人： Toshiyuki Kawakami ,  Yukio Yamasaki ,  Shigetoshi Ito ,  Susumu Omi

IPC分类号： H01L2715

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： In a wafer having an LD structure 251 formed on a GaN-based substrate 250, cleavage guide grooves 252 are formed in its surface by scribing from above the LD structure 251 with a diamond needle. The cleavage guide grooves 252 are formed one along each of stripe-shaped waveguides 253 formed parallel to the direction of the wafer, and are formed in the shape of broken lines in the direction of the wafer.

摘要翻译： 在具有形成在GaN基基板250上的LD结构251的晶片中，通过用金刚石针从LD结构251的上方划线而在其表面上形成解理引导槽252。 解理引导槽252沿着平行于晶片的<1-100>方向形成的条形波导253形成一个，并且在晶片的<11-20>方向上形成为虚线的形状 。

公开(公告)号：US06734111B2

公开(公告)日：2004-05-11

申请号：US09924448

申请日：2001-08-09

申请人： L. Karsten V. Lindström ,  N. Peter Blixt ,  Svante H. Söderholm ,  Lauerent Krummenacher ,  Christofer Silvenius ,  Anand Srinivasan ,  Carl-Fredrik Carlström

发明人： L. Karsten V. Lindström ,  N. Peter Blixt ,  Svante H. Söderholm ,  Lauerent Krummenacher ,  Christofer Silvenius ,  Anand Srinivasan ,  Carl-Fredrik Carlström

IPC分类号： H01L21302

CPC分类号： H01S5/028 ,  H01S5/0202 ,  H01S5/0282 ,  H01S5/12 ,  H01S5/18 ,  H01S5/2081 ,  H01S5/2214

摘要： The invention relates to a method using dry etching to obtain contamination free surfaces on of a material chosen from the group comprising GaAs, GaAlAs, InGaAsP, and InGaAs to obtain nitride layers on arbitrary structures on GaAs based lasers, and a GaAs based laser manufactured in accordance with the method. The laser surface is provided with a mask masking away parts of its surface to be prevented from dry etching. The laser is then placed in vacuum. Dry etching is then performed using a substance chosen from the group containing: chemically reactive gases, inert gases, a mixture between chemically reactive gases and inert gases. A native nitride layer is created using plasma containing nitrogen. A protective layer and/or a mirror coating is added.

摘要翻译： 本发明涉及使用干法蚀刻来获得选自GaAs，GaAlAs，InGaAsP和InGaAs的材料的无污染表面的方法，以获得在GaAs基激光器上任意结构上的氮化物层，以及GaAs基激光器 按照方法。 激光表面设置有遮蔽其表面的部分以防止干蚀刻的掩模。 然后将激光置于真空中。 然后使用从包含化学反应气体，惰性气体，化学反应气体和惰性气体之间的混合物的组中选择的物质进行干法蚀刻。 使用含氮的等离子体产生天然氮化物层。 加入保护层和/或镜面涂层。

公开(公告)号：US06711192B1

公开(公告)日：2004-03-23

申请号：US09567024

申请日：2000-05-09

申请人： Kiyofumi Chikuma ,  Hiroyuki Ota ,  Toshiyuki Tanaka

发明人： Kiyofumi Chikuma ,  Hiroyuki Ota ,  Toshiyuki Tanaka

IPC分类号： H01S500

CPC分类号： H01S5/22 ,  H01L2224/48463 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/32341 ,  H01S2304/04

摘要： A method for fabricating a nitride semiconductor laser device having crystal layers each made of a group III nitride semiconductor (AlxGa1−x)1−YInyN (0≦x≦1, 0≦y≦1) layered in order on a ground layer (Alx′Ga1−x′)1−y′Iny′N (0≦x′≦1, 0≦y′≦1). The method including a step of forming a plurality of crystal layers each made of group III nitride semiconductor on a ground layer formed on a substrate such as sapphire; a step of applying a light beam from the substrate side toward the interface between the substrate and the ground layer thereby forming the decomposed-matter area of a nitride semiconductor; a step of separating the ground layer carrying the crystal layers from the substrate along the decomposed-matter area; and a step of cleaving the ground layer thereby forming a cleavage plane of the crystal layers.

摘要翻译： 一种用于制造氮化物半导体激光器件的方法，该器件具有各自由III族氮化物半导体（Al x Ga 1-x）1-Y In y N（0 <= x <= 1,0 <= y <= 1） 接地层（Al x Ga 1-x'）1-y'In y'N（0 <= x'<= 1,0 <= y'<= 1）。 该方法包括在形成在诸如蓝宝石的衬底上的接地层上形成由III族氮化物半导体制成的多个晶体层的步骤; 从基板侧朝向基板和接地层之间的界面施加光束，从而形成氮化物半导体的分解物区域的步骤; 沿着分解物区域从基板分离携带晶体层的接地层的步骤; 以及切割接地层从而形成晶体层的解理面的步骤。