公开(公告)号：US20090251883A1

公开(公告)日：2009-10-08

申请号：US12382282

申请日：2009-03-12

申请人： Yukio Yamasaki ,  Katsuhiko Kishimoto

发明人： Yukio Yamasaki ,  Katsuhiko Kishimoto

IPC分类号： F21V9/16

CPC分类号： H01S5/34326 ,  B82Y20/00 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01S5/005 ,  H01S5/0202 ,  H01S5/02288 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/0658 ,  H01S5/2215 ,  H01S5/4031 ,  H01S2301/02 ,  H01L2924/00014

摘要： A light-emitting device including a semiconductor laser element having at least a substrate, a first conductive type clad layer, an active layer, and a second conductive type clad layer in this order; and a phosphor absorbing a laser light emitted from the semiconductor laser element and radiating fluorescence, wherein the semiconductor laser element is a self-oscillation laser element.

摘要翻译： 一种发光器件，其包括依次具有至少衬底，第一导电型覆盖层，有源层和第二导电型覆盖层的半导体激光元件; 以及吸收从半导体激光元件发射的激光并发出荧光的荧光体的荧光体，其中，所述半导体激光元件为自激振荡激光元件。

公开(公告)号：US20070217462A1

公开(公告)日：2007-09-20

申请号：US11715443

申请日：2007-03-08

申请人： Yukio Yamasaki

发明人： Yukio Yamasaki

IPC分类号： H01L21/00 ,  H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0201 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3211

摘要： A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.

摘要翻译： 一种生产氮化物半导体激光器件的方法包括：形成包括第一导电类型的氮化物半导体层，氮化物半导体的有源层，第二导电类型的氮化物半导体层和第二导电类型的电极焊盘的晶片 导电类型依次堆叠在导电基板的主表面上，并且还包括平行于有源层的条状波导结构; 切割晶片以获得第一类型和第二类型的激光器件芯片; 并通过自动图像识别区分第一类型和第二类型的芯片。 第一类型和第二类型的芯片在条形波导结构相对于每个芯片的宽度方向的位置上彼此不同，并且电极焊盘与基板的主表面的面积比也不同。

公开(公告)号：US07142575B2

公开(公告)日：2006-11-28

申请号：US10769244

申请日：2004-01-30

申请人： Yukio Yamasaki ,  Shigetoshi Ito

发明人： Yukio Yamasaki ,  Shigetoshi Ito

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01S5/0655 ,  H01S5/2022 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/34333

摘要： A semiconductor laser element has the following structure. In the clad layer, a difference in a light radiation loss between the basic horizontal-lateral mode and the 1st-order horizontal-lateral mode is 10 cm−1 or more. The refractive index of the clad layer is below an effective index against light in the basic horizontal-lateral mode, and the refractive index of the clad layer is equal to or more than an effective index against light in the 1st-order horizontal-lateral mode. The upper clad layer is provided only above a portion of the active layer, and thus is at least included in the ridge-stripe structure. This structure inhibits the I-L characteristic from suffering kink and realizes oscillations in the basic horizontal-lateral mode until output power reaches as high as 60–100 mW, in a peak output power of the semiconductor laser element at the time of a pulse current operation. This structure also enables the FFP to have an ellipticity of close to 1, thus making the spot of the semiconductor laser element close to a circular shape.

摘要翻译： 半导体激光元件具有以下结构。 在包覆层中，基本水平横向模式和一阶水平横向模式之间的光辐射损失之差为10cm -1以上。 包覆层的折射率低于基本水平横向模式中的光的有效折射率，并且包覆层的折射率等于或大于一阶水平横向模式中的光的有效折射率 。 上覆盖层仅设置在有源层的一部分上方，因此至少包括在脊条结构中。 这种结构在脉冲电流操作时抑制了半导体激光器元件的峰值输出功率，从而抑制I-L特性遭受扭结并实现基本水平横向模式的振荡，直到输出功率达到高达60-100mW。 该结构也使得FFP具有接近1的椭圆率，从而使半导体激光元件的光斑接近圆形。

公开(公告)号：US06670647B1

公开(公告)日：2003-12-30

申请号：US09652101

申请日：2000-08-30

申请人： Yukio Yamasaki ,  Shigetoshi Ito

发明人： Yukio Yamasaki ,  Shigetoshi Ito

IPC分类号： H01L2906

CPC分类号： H01L33/32 ,  B82Y20/00 ,  G11B7/127 ,  H01L33/06 ,  H01S5/0213 ,  H01S5/1057 ,  H01S5/3202 ,  H01S5/34333 ,  H01S2301/14 ,  H01S2304/04

摘要： A semiconductor light emitting element includes: a first conductive type layer made of a nitride semiconductor which is deposited on a substrate; a quantum well active layer made of AlPGaQIn1−P−QN (O≦P, O≦Q, P+Q

摘要翻译： 半导体发光元件包括：沉积在基板上的由氮化物半导体制成的第一导电类型层; 由沉积在第一导电类型层上的AlPGaQIn1-P-QN（O <= P，O <= Q，P + Q <1）制成的量子阱有源层，量子阱活性层包括一对势垒层 以及插入其间的阱层; 以及沉积在量子阱有源层上的由氮化物半导体制成的第二导电类型层，其中从量子阱有源层的端面自发地发射到与基板平行的方向偏振的光。

公开(公告)号：US08031751B2

公开(公告)日：2011-10-04

申请号：US12232588

申请日：2008-09-19

申请人： Yukio Yamasaki ,  Kei Yamamoto

发明人： Yukio Yamasaki ,  Kei Yamamoto

IPC分类号： H01S3/04

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L2224/48091 ,  H01L2924/01322 ,  H01L2924/3025 ,  H01S5/0224 ,  H01S5/02264 ,  H01S5/02272 ,  H01S5/024 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/2231 ,  H01S5/4031 ,  H01L2924/00014 ,  H01L2924/00

摘要： The present invention relates to a nitride semiconductor laser device having a structure in which two or more of nitride semiconductor laser elements, having at least a first electrode on a first main surface of a first conductive type conductive substrate, having at least a first conductive type nitride semiconductor layer, an active layer, a second conductive type nitride semiconductor layer, and a second electrode on a second main surface of the conductive substrate, and having a stripe-waveguide structure parallel to the first main surface, are arranged in a direction parallel to the first main surface and a direction perpendicular to the direction of light that is emitted from the stripe waveguide structure in the nitride semiconductor laser device, and the first sub-mount and the first electrode of the nitride semiconductor laser element are electrically and heat-conductively connected, and the second sub-mount and the second electrode of the nitride semiconductor laser element are electrically and heat-conductively connected.

摘要翻译： 本发明涉及一种氮化物半导体激光器件，其结构是在第一导电型导电性基板的第一主面上具有至少第一电极的至少具有第一导电型的氮化物半导体激光元件 氮化物半导体层，有源层，第二导电型氮化物半导体层和在导电性基板的第二主面上的第二电极，并且具有平行于第一主表面的条状波导结构， 并且与氮化物半导体激光器件中的条状波导结构发射的光的方向垂直的方向，并且氮化物半导体激光元件的第一子安装座和第一电极是电气和热交换的， 导电连接，氮化物半导体激光元件a的第二子座和第二电极 电和导热连接。

公开(公告)号：US20100290492A1

公开(公告)日：2010-11-18

申请号：US12801831

申请日：2010-06-28

申请人： Yukio Yamasaki

发明人： Yukio Yamasaki

IPC分类号： H01S5/30

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0201 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3211

摘要： A method of producing a nitride semiconductor laser device includes forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.

摘要翻译： 一种氮化物半导体激光器件的制造方法，其特征在于，包括：形成包括第一导电型的氮化物半导体层，氮化物半导体的有源层，第二导电型的氮化物半导体层和第二导电型的电极焊盘的晶片 类型堆叠在导电衬底的主表面上，并且还包括平行于有源层的条状波导结构; 切割晶片以获得第一类型和第二类型的激光器件芯片; 并通过自动图像识别来区分第一类型和第二类型的芯片。 第一类型和第二类型的芯片在条形波导结构相对于每个芯片的宽度方向的位置上彼此不同，并且电极焊盘与基板的主表面的面积比也不同。

公开(公告)号：US07804878B2

公开(公告)日：2010-09-28

申请号：US11715443

申请日：2007-03-08

申请人： Yukio Yamasaki

发明人： Yukio Yamasaki

IPC分类号： H01S3/04 ,  H01S3/097

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0201 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3211

摘要： A method of producing a nitride semiconductor laser device includes: forming a wafer including a nitride semiconductor layer of a first conductivity type, an active layer of a nitride semiconductor, a nitride semiconductor layer of a second conductivity type, and an electrode pad for the second conductivity type stacked in this order on a main surface of a conductive substrate and also including stripe-like waveguide structures parallel to the active layer; cutting the wafer to obtain a first type and a second type of laser device chips; and distinguishing between the first type and the second type of chips by automatic image recognition. The first type and the second type of chips are different from each other in position of the stripe-like waveguide structure with respect to a width direction of each chip and also in area ratio of the electrode pad to the main surface of the substrate.

摘要翻译： 一种生产氮化物半导体激光器件的方法包括：形成包括第一导电类型的氮化物半导体层，氮化物半导体的有源层，第二导电类型的氮化物半导体层和第二导电类型的电极焊盘的晶片 导电类型依次堆叠在导电基板的主表面上，并且还包括平行于有源层的条状波导结构; 切割晶片以获得第一类型和第二类型的激光器件芯片; 并通过自动图像识别区分第一类型和第二类型的芯片。 第一类型和第二类型的芯片在条形波导结构相对于每个芯片的宽度方向的位置上彼此不同，并且电极焊盘与基板的主表面的面积比也不同。

公开(公告)号：US07177336B2

公开(公告)日：2007-02-13

申请号：US10510324

申请日：2003-03-26

申请人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

发明人： Mototaka Taneya ,  Yukio Yamasaki ,  Shigetoshi Ito

IPC分类号： H01S3/03 ,  H01S5/00 ,  H01S5/20 ,  H01S5/323

CPC分类号： H01S5/20

摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate transparent and having a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in this order, wherein the waveguide has an effective refractive index ne, and a relationship of nc2

摘要翻译： 一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n _{的衬底上的折射率n C 1的第一覆盖层 折射率为n3c2的第二覆盖层，折射率为n3c3的第三覆盖层，折射率为n3c3的第一导电型引导层， 指数n N，有源量子阱层，第二导电型导向层，第二导电型覆盖层和第二导电型接触层，其中波导具有有效的折射率 （N c1，n3，c3，...，n3）的关系，N > N（N N，N，N）满足。}

公开(公告)号：US07041523B2

公开(公告)日：2006-05-09

申请号：US10815847

申请日：2004-04-02

申请人： Toshiyuki Kawakami ,  Yukio Yamasaki ,  Shigetoshi Ito ,  Susumu Omi

发明人： Toshiyuki Kawakami ,  Yukio Yamasaki ,  Shigetoshi Ito ,  Susumu Omi

IPC分类号： H01L21/00

CPC分类号： H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/1082 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： In a wafer having an LD structure 251 formed on a GaN-based substrate 250, cleavage guide grooves 252 are formed in its surface by scribing from above the LD structure 251 with a diamond needle. The cleavage guide grooves 252 are formed one along each of stripe-shaped waveguides 253 formed parallel to the direction of the wafer, and are formed in the shape of broken lines in the direction of the wafer.

摘要翻译： 在具有形成在GaN基基板250上的LD结构251的晶片中，通过用金刚石针从LD结构251的上方划线而在其表面上形成解理引导槽252。 解理引导槽252沿着平行于晶片的<1-100>方向形成的条形波导253形成一个，并且在晶片的<11-20>方向上形成为虚线的形状 。

公开(公告)号：US20050117616A1

公开(公告)日：2005-06-02

申请号：US10497018

申请日：2002-11-25

申请人： Yukio Yamasaki ,  Shigetoshi Ito

发明人： Yukio Yamasaki ,  Shigetoshi Ito

IPC分类号： H01S5/068 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/00

CPC分类号： H01S5/32341 ,  H01S5/042

摘要： A drive current is generated by mixing a pulse signal from a pulse generator (13) and a DC current from a DC current power supply (14) by means of a T circuit (11) and injected into a nitride semiconductor laser (10) having a horizontal light-confinement ridge structure. The horizontal light-confinement coefficient of the nitride semiconductor laser (10) is between 85% and 99%. The time when the current waveform of the drive current is continuously over the threshold current of the nitride semiconductor laser ranges from 5 [nsec] to 1,000 [nsec].

摘要翻译： 通过利用T电路（11）混合来自脉冲发生器（13）的脉冲信号和来自直流电流电源（14）的直流电流产生驱动电流，并将其注入到氮化物半导体激光器（10）中，所述氮化物半导体激光器 一个水平光束缚脊结构。 氮化物半导体激光器（10）的水平光限制系数在85％和99％之间。 驱动电流的电流波形连续超过氮化物半导体激光器的阈值电流的时间为5 [nsec]至1,000 [nsec]。