公开(公告)号：US20250006846A1

公开(公告)日：2025-01-02

申请号：US18764643

申请日：2024-07-05

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yukinori SHIMA ,  Shinpei MATSUDA ,  Haruyuki BABA ,  Ryunosuke HONDA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/778

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.

公开(公告)号：US20240429319A1

公开(公告)日：2024-12-26

申请号：US18817534

申请日：2024-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Jun ISHIKAWA ,  Sachiaki TEZUKA ,  Tetsuya KAKEHATA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/768 ,  H01L29/66

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.

公开(公告)号：US20240429287A1

公开(公告)日：2024-12-26

申请号：US18825421

申请日：2024-09-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yasuharu HOSAKA ,  Yukinori SHIMA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H01L29/24 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

Abstract: A novel material is provided. A composite oxide semiconductor includes a first region and a second region. The first region contains indium. The second region contains an element M (the element M is one or more of Ga, Al, Hf, Y, and Sn). The first region and the second region are arranged in a mosaic pattern. The composite oxide semiconductor further includes a third region. The element M is gallium. The first region contains indium oxide or indium zinc oxide. The second region contains gallium oxide or gallium zinc oxide. The third region contains zinc oxide.

公开(公告)号：US12178093B2

公开(公告)日：2024-12-24

申请号：US17642425

申请日：2020-09-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Koji Kusunoki ,  Kazunori Watanabe ,  Susumu Kawashima ,  Daisuke Kubota ,  Taisuke Kamada ,  Ryo Hatsumi

IPC: H01L29/08 ,  H10K50/11 ,  H10K50/15 ,  H10K50/16 ,  H10K59/121 ,  H10K59/131 ,  H10K77/10 ,  H10K101/40

Abstract: The resolution of a display apparatus having a light detection function is increased. A display apparatus includes a plurality of transistors and a light-emitting and light-receiving device in a subpixel. The light-emitting and light-receiving device has a function of emitting light of a first color and a function of receiving light of a second color. One of a source and a drain of a first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a gate of a second transistor. One electrode of the light-emitting and light-receiving device is electrically connected to one of a source and a drain of the second transistor, one of a source and a drain of a third transistor, and one of a source and a drain of a fifth transistor. One of a source and a drain of a fourth transistor is electrically connected to a second wiring, and the other thereof is electrically connected to the other of the source and the drain of the third transistor.

公开(公告)号：US20240421284A1

公开(公告)日：2024-12-19

申请号：US18819233

申请日：2024-08-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teppei OGUNI ,  Takuya MIWA

IPC: H01M4/136 ,  C01B25/45 ,  H01M4/02 ,  H01M4/36 ,  H01M4/58 ,  H01M10/0525 ,  H01M10/42

Abstract: A lithium-ion secondary battery including a lithium-containing complex phosphate as a positive electrode active material is provided. Furthermore, a positive electrode active material with high diffusion rate of lithium ions is provided to provide a lithium-ion secondary battery with high output. A positive electrode active material of a lithium-ion secondary battery includes a first plate-like component and a second plate-like component, a third prismatic component between the first component and the second component, and a space between the first component and the second component.

公开(公告)号：US20240420967A1

公开(公告)日：2024-12-19

申请号：US18761378

申请日：2024-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA

IPC: H01L21/385 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/417 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

Abstract: In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then, oxygen is introduced (added) to the oxide semiconductor layer through the oxide insulating layer, and heat treatment is performed. Through these steps of oxygen introduction and heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor layer, so that the oxide semiconductor layer is highly purified.

公开(公告)号：US20240420616A1

公开(公告)日：2024-12-19

申请号：US18706408

申请日：2022-11-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Koji KUSUNOKI ,  Daisuke KUBOTA ,  Kensuke YOSHIZUMI

IPC: G09G3/20 ,  G06F3/042 ,  G06F3/044 ,  G06F3/04886 ,  G09G3/3233 ,  H10K59/40

Abstract: A display apparatus or an electronic device with low power consumption is provided. An image processing system capable of reducing the amount of communication data is provided. The image processing system includes a display portion, an input portion, an arithmetic portion, and an image processing portion. The input portion has a function of obtaining positional information on pointing operation by a user. The arithmetic portion has a function of defining a first region and a second region in accordance with the positional information. The image processing portion has a function of executing image processing on a portion of a first image to generate a second image, the portion corresponding to the first region. The display portion has a function of displaying the second image.

公开(公告)号：US12170339B2

公开(公告)日：2024-12-17

申请号：US18243688

申请日：2023-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Watanabe ,  Mitsuo Mashiyama ,  Kenichi Okazaki ,  Motoki Nakashima ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

公开(公告)号：US12170338B2

公开(公告)日：2024-12-17

申请号：US18237431

申请日：2023-08-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L33/16 ,  H01L27/02 ,  H01L27/12 ,  H01L29/786 ,  H01L21/66

Abstract: A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×1019 (atoms/cm3) or less and thus substantially serves as an insulator in a state where an electric field is not generated. Therefore, off-state current of a thin film transistor can be reduced, leading to suppressing the leakage of electric charge stored in a capacitor, through the thin film transistor. Accordingly, a malfunction of the logic circuit can be prevented. Further, the excessive amount of current which flows in the logic circuit can be reduced through the reduction of off-state current of the thin film transistor, resulting in low power consumption of the logic circuit.

公开(公告)号：US12170317B2

公开(公告)日：2024-12-17

申请号：US17575707

申请日：2022-01-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki

IPC: H10B43/27 ,  H01L29/24

Abstract: A semiconductor device having a large storage capacity per unit area is provided. The semiconductor device includes a memory transistor. The memory transistor includes a conductor including an opening, a first insulator provided in contact with an inner side of the opening, a second insulator provided in contact with an inner side of the first insulator, a third insulator provided in contact with an inner side of the second insulator, a first oxide provided in contact with an inner side of the third insulator, and a second oxide provided in contact with an inner side of the first oxide. An energy gap of the second oxide is narrower than an energy gap of the first oxide.