Bottle cap
    111.
    发明授权
    Bottle cap 失效
    瓶盖

    公开(公告)号:US08631933B2

    公开(公告)日:2014-01-21

    申请号:US13517380

    申请日:2009-08-10

    CPC classification number: B65D47/243 B65D51/2842 B65D51/2892

    Abstract: A bottle cap containing different kinds of materials is coupled with a container inside an exterior material. The container is divided into a sealing portion coupled with a bottle neck and an operation part coupled with the exterior material. When the exterior material constituting the bottle cap is coupled with the bottle neck, the bottle cap is perpendicularly coupled to the bottle neck together with the container. Also, the side portion of the exterior material is sealed with a series of mechanical device along a screw thread or screw groove after the bottle cap is coupled with the bottle neck. When the exterior material is raised along the bottle neck by opening the bottle cap, materials stored in an inner storage space of the container fall into and are mixed inside the bottle.

    Abstract translation: 含有不同种类材料的瓶盖与外部材料中的容器相连。 容器被分为与瓶颈连接的密封部分和与外部材料结合的操作部分。 当构成瓶盖的外部材料与瓶颈结合时,瓶盖与容器一起垂直地连接到瓶颈。 此外,在瓶盖与瓶颈联接之后,外部材料的侧部沿着螺纹或螺纹槽用一系列机械装置密封。 当外部材料通过打开瓶盖而沿瓶颈升高时,存储在容器的内部储存空间中的材料落入瓶子内部并混合在瓶子内。

    CAP ASSEMBLY HAVING STORAGE CHAMBER FOR SECONDARY MATERIAL WITH MOVABLE WORKING MEMBER
    112.
    发明申请
    CAP ASSEMBLY HAVING STORAGE CHAMBER FOR SECONDARY MATERIAL WITH MOVABLE WORKING MEMBER 有权
    具有具有可移动工作构件的二次材料的储存室的盖组件

    公开(公告)号:US20130105339A1

    公开(公告)日:2013-05-02

    申请号:US13716525

    申请日:2012-12-17

    CPC classification number: B65D25/08 B65D51/2864

    Abstract: A cap assembly having a storage chamber for a secondary ingredient, which is adapted to a mouth of a container, comprising: a body having a mouth; a chamber part having a storage space for secondary ingredient in the body and a hole formed at the lower end thereof; said chamber part is sealed by a movable working member and is opened when the movable working member is removed from the hole upon removing the cap so that the secondary ingredient may be mixed with the first ingredient in the container, said the movable working member being adapted to maintain the opened hole, after moving to open the hole, thereby effectively mixing of the different ingredients.

    Abstract translation: 一种帽组件,其具有用于次要成分的储存室,其适于容器的口部,包括:具有口部的主体; 具有用于体内次要成分的储存空间和在其下端形成的孔的室部分; 所述腔室部分由可移动的工作构件密封,并且当移除所述帽时从所述孔中移除所述可移动工作构件以使得所述次要成分可与所述容器中的所述第一成分混合时所述腔室部分被打开,所述可移动工作构件适于 保持打开的孔,移动后打开孔,从而有效地混合不同的成分。

    MAGNETOELASTIC TORQUE SENSOR WITH AMBIENT FIELD REJECTION
    113.
    发明申请
    MAGNETOELASTIC TORQUE SENSOR WITH AMBIENT FIELD REJECTION 有权
    具有环境磁场的MAGNETOELASTIC TORQUE传感器

    公开(公告)号:US20120074933A1

    公开(公告)日:2012-03-29

    申请号:US13309104

    申请日:2011-12-01

    Applicant: Seong-Jae LEE

    Inventor: Seong-Jae LEE

    CPC classification number: G01L3/102 G01R33/07

    Abstract: The present invention involves a method and apparatus for canceling the effects of magnetic field noise in a torque sensor by placing three sets of magnetic field sensors around a shaft, the first set of field sensors being placed in the central region of the shaft and the second and third sets of field sensors being placed on the right side and left side of the field sensors placed at the central region, respectively. A torque-induced magnetic field is not cancelled with this arrangement of field sensors but a magnetic near field from a near field source is cancelled.

    Abstract translation: 本发明涉及一种用于通过将三组磁场传感器放置在轴周围来消除扭矩传感器中的磁场噪声的影响的方法和装置,第一组场传感器被放置在轴的中心区域中,而第二组 并且第三组场传感器分别放置在放置在中心区域的场传感器的右侧和左侧。 通过这种现场传感器的布置,扭矩感应磁场不被抵消,而来自近场源的磁场近场被取消。

    Method of manufacturing semiconductor device
    115.
    发明授权
    Method of manufacturing semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号:US07947585B2

    公开(公告)日:2011-05-24

    申请号:US12090891

    申请日:2006-12-04

    Abstract: Provided is a method of manufacturing a semiconductor device in which properties of photoresist through a lithography process are changed to form a dummy structure, and the structure is applied to a process of forming a gate electrode. The method includes the steps of: forming a buffer layer on the top of a semiconductor substrate; applying an inorganic photoresist on the buffer layer, and forming a photoresist pattern using a lithography process; thermally treating the photoresist pattern using a predetermined gas; uniformly depositing an insulating layer on the thermally treated structure, and etching the deposited layer by the deposited thickness in order to expose the thermally treated photoresist pattern; depositing an insulating layer on the etched structure, and etching the deposited insulating layer to expose the thermally treated photoresist pattern; removing the exposed photoresist pattern using an etching process; forming a gate oxide layer in the portion in which the photoresist pattern is removed; and forming a gate electrode on the gate oxide layer. Accordingly, in forming a structure for manufacturing a nano-sized device, the properties of the layer formed by a lithography process are improved through thermal treatment, and thus the structure used to manufacture various devices can be easily formed.

    Abstract translation: 提供了通过光刻处理改变光致抗蚀剂的特性以形成虚拟结构的半导体器件的制造方法,并且将该结构应用于形成栅电极的工艺。 该方法包括以下步骤:在半导体衬底的顶部上形成缓冲层; 在缓冲层上施加无机光致抗蚀剂,并使用光刻工艺形成光致抗蚀剂图案; 使用预定气体热处理光刻胶图案; 在热处理结构上均匀沉积绝缘层,并通过沉积的厚度蚀刻沉积层,以暴露热处理的光致抗蚀剂图案; 在蚀刻的结构上沉积绝缘层,并蚀刻沉积的绝缘层以暴露热处理的光致抗蚀剂图案; 使用蚀刻工艺去除曝光的光致抗蚀剂图案; 在除去光致抗蚀剂图案的部分中形成栅氧化层; 以及在所述栅极氧化物层上形成栅电极。 因此,在形成纳米尺寸器件的制造结构时,通过热处理提高了通过光刻工艺形成的层的性质,因此可以容易地形成用于制造各种器件的结构。

    Cap assembly having storage chamber for secondary material with inseparable working member
    116.
    发明申请
    Cap assembly having storage chamber for secondary material with inseparable working member 有权
    盖组件具有用于具有不可分离工作构件的次级材料的储存室

    公开(公告)号:US20100163442A1

    公开(公告)日:2010-07-01

    申请号:US12311599

    申请日:2006-12-12

    Abstract: A cap assembly mounted on a neck of a container for containing a ingredient different from that in accommodated in a container comprises a cap body having an inner housing formed with a chamber for storage of a secondary ingredient and a working member adapted to open a low end opening of the chamber to allow the secondary ingredient in the chamber of the inner housing to be mixed with a primary ingredient in the container. The mixed ingredients may be discharged through an opening.

    Abstract translation: 安装在容器的颈部上的用于容纳与容纳在容器中的成分不同的成分的帽组件包括盖主体,其具有形成有用于存储次要成分的室的内部壳体和适于打开低端的工作构件 打开室以允许内壳体的腔室中的次要成分与容器中的主要成分混合。 混合的成分可以通过开口排出。

    Data storing and reading apparatus for storing data in a nano-device
    118.
    发明授权
    Data storing and reading apparatus for storing data in a nano-device 失效
    用于在纳米器件中存储数据的数据存储和读取装置

    公开(公告)号:US07656776B2

    公开(公告)日:2010-02-02

    申请号:US10981550

    申请日:2004-11-05

    Abstract: Provided is a data storing and reading apparatus for storing and reading data using a nano device with nano-dots dots regularly arranged, comprising a probe movable by a cantilever so as to be placed onto each nano-dot of the nano device, a bias power supply unit for supplying a storing bias voltage and a reading bias voltage between the probe and the nano device, a light beam generator for generating a light beam to detect a position of the probe, a position detector for detecting the light beam reflected from the probe, an amplifier for amplifying an output signal of the position detector, and a detection circuit for reading data stored in the nano-dot using an output signal of the amplifier.

    Abstract translation: 提供一种数据存储和读取装置,用于使用具有规则排列的纳米点点的纳米装置来存储和读取数据,包括可由悬臂移动以便放置在纳米装置的每个纳米点上的探针,偏置功率 供给单元,用于在探针和纳米装置之间提供存储偏置电压和读取偏置电压;光束发生器,用于产生光束以检测探针的位置,用于检测从探针反射的光束的位置检测器 放大器,用于放大位置检测器的输出信号;以及检测电路,用于使用放大器的输出信号读取存储在纳点中的数据。

    Multi-path interference removing for wireless relay system apparatus and method using by same channel frequency
    119.
    发明授权
    Multi-path interference removing for wireless relay system apparatus and method using by same channel frequency 有权
    用于无线中继系统设备的多路径干扰消除和使用相同信道频率的方法

    公开(公告)号:US07486933B2

    公开(公告)日:2009-02-03

    申请号:US11124295

    申请日:2005-05-09

    CPC classification number: H04B7/15564

    Abstract: Embodies of peripheral a wireless relay system apparatus and method for a multi-path interference removing using by same channel frequency is shown and described, which purpose of the present invention is to overcome extension of service coverage and a dead spot with amplifying same channel frequency, a problem in doing the relay, system wireless relay system was a same frequency interference of RF (Radio Frequency) output is become feedback radiating from tx antenna to rx antenna of the relay system, the wireless relay system apparatus and method effectively eliminates the same frequency interference so that it can ensure an additional system gain and easy to set up relatively to general same frequency relay system.

    Abstract translation: 本发明的目的是为了克服服务覆盖的扩展和具有放大同一信道频率的死点的周边无线中继系统装置和方法,用于通过相同的信道频率进行多径干扰去除, 做继电器的问题,系统无线中继系统是频率相同的频率干扰(射频)输出成为从tx天线到中继系统的rx天线的反馈辐射,无线中继系统的装置和方法有效地消除了相同的频率 干扰使得它可以确保相对于一般的同频中继系统的附加系统增益和容易设置。

    METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE FABRICATED BY THE METHOD
    120.
    发明申请
    METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE FABRICATED BY THE METHOD 审中-公开
    用于制造半导体器件的方法和由该方法制成的半导体器件

    公开(公告)号:US20080124854A1

    公开(公告)日:2008-05-29

    申请号:US11744927

    申请日:2007-05-07

    CPC classification number: H01L21/28088 H01L29/4966 H01L29/78

    Abstract: A method for fabricating a semiconductor device includes forming a gate insulation layer over a substrate, forming a conductive compound containing layer over the gate insulation layer, etching the conductive compound containing layer and the gate insulation layer to form a gate structure, forming a metal layer over the resultant structure obtained after the etching, and letting the metal layer to react with silicon from the substrate to form source and drain regions comprising a metal silicide layer over the substrate exposed on both sides of the gate structure, wherein the conductive compound containing layer does not react with the metal layer.

    Abstract translation: 一种制造半导体器件的方法,包括在衬底上形成栅极绝缘层,在栅极绝缘层上形成导电化合物含有层,蚀刻导电化合物层和栅极绝缘层以形成栅极结构,形成金属层 在蚀刻之后获得的结果结构上,并且使金属层与来自衬底的硅反应以形成在暴露于栅极结构的两侧的衬底上的包含金属硅化物层的源区和漏区,其中导电化合物含有层 不与金属层反应。

Patent Agency Ranking