公开(公告)号：US06423626B1

公开(公告)日：2002-07-23

申请号：US09334753

申请日：1999-06-16

申请人： Anand Srinivasan ,  Gurtej Sandhu ,  Sujit Sharan

发明人： Anand Srinivasan ,  Gurtej Sandhu ,  Sujit Sharan

IPC分类号： H01L214763

CPC分类号： H01L21/76865 ,  H01L21/76844 ,  H01L21/76877 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a method for providing improved step coverage of contacts with conductive materials, and particularly metals. An initial conductive layer is deposited over an insulating layer either before or after contact opening formation. The deposition process tends to block the contact mouth with a metal overhang, or cusp. After both conductive layer deposition and contact formation a portion of the initial conductive layer is removed, thus removing at least a portion of the metal cusp and opening the contact mouth for further depositions. The invention has particular utility in connection with formation of metal plugs in high-aspect ratio contacts. Embodiments are disclosed wherein the cusp removal comprises mechanical planarization, etching with high viscosity chemicals, and facet etching.

摘要翻译： 公开了一种用于提供与导电材料，特别是金属的接触的改进的台阶覆盖的方法。 在接触开口形成之前或之后，在绝缘层上沉积初始导电层。 沉积过程倾向于以金属悬垂或尖端阻塞接触嘴。 在导电层沉积和接触形成两者之后，去除初始导电层的一部分，从而去除金属尖端的至少一部分并打开接触口以进一步沉积。 本发明在高纵横比触点形成金属插头方面具有特殊的用途。 公开了其中尖端去除包括机械平面化，用高粘度化学品蚀刻和小面蚀刻的实施例。

公开(公告)号：US06412437B1

公开(公告)日：2002-07-02

申请号：US09642745

申请日：2000-08-18

申请人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

发明人： Philip H. Campbell ,  Sujit Sharan ,  Craig M. Carpenter ,  Allen P. Mardian

IPC分类号： C23C1600

CPC分类号： C23C16/45565 ,  C23C16/4409 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244

摘要： The invention includes a plasma enhanced chemical vapor deposition reactor, and a plasma enhanced chemical vapor deposition process. In one implementation, a plasma enhanced chemical vapor deposition reactor includes a deposition chamber having an electrically conductive RF powered showerhead support electrode. An electrically conductive gas distributing showerhead is mounted to the RF powered showerhead support electrode. A preformed electrically conductive gasket is interposed between the RF powered showerhead support electrode and the gas distributing showerhead. In one implementation, a plasma enhanced chemical vapor deposition process sequentially includes, a) in a first plurality of discrete depositions, plasma enhanced chemical vapor depositing, material upon a plurality of semiconductor substrates within a chamber of a plasma enhanced chemical vapor deposition reactor; b) disassembling the reactor at least by separating an electrically conductive RF powered showerhead support electrode of the reactor and an electrically conductive gas distributing showerhead of the reactor from one another; c) sandwiching an electrically conductive material between the electrically conductive RF powered showerhead support electrode and the electrically conductive gas distributing showerhead during a reassembly of the reactor at least including connecting the electrically conductive RF powered showerhead support electrode and an electrically conductive gas distributing. showerhead together; and d) in a second plurality of discrete depositions, plasma enhanced chemical vapor depositing material upon a plurality of semiconductor substrates within the chamber of the plasma enhanced chemical vapor deposition reactor.

摘要翻译： 本发明包括等离子体增强化学气相沉积反应器和等离子体增强化学气相沉积工艺。 在一个实施方案中，等离子体增强化学气相沉积反应器包括具有导电RF功率的喷头支撑电极的沉积室。 导电气体分配喷头安装到RF供电的喷头支撑电极上。 在RF供电的喷头支撑电极和气体分配喷头之间插入预先形成的导电垫片。 在一个实施方案中，等离子体增强化学气相沉积方法依次包括：a）在等离子体增强化学气相沉积反应器的腔室内的多个半导体衬底上的第一多个离散沉积中的等离子体增强化学气相沉积材料; b）至少通过将反应器的导电RF供电的喷头支撑电极和反应器的导电气体分配喷头相互分离来拆卸反应器; c）在所述反应器的重新组装期间至少包括连接所述导电RF功率的喷头支撑电极和导电气体分布，在所述导电RF供电的喷头支撑电极和所述导电气体喷射支撑电极之间夹着导电材料。 淋浴头在一起 和d）在等离子体增强化学气相沉积反应器的室内的多个半导体衬底上的第二多个离散沉积中的等离子体增强化学气相沉积材料。

公开(公告)号：US06398923B1

公开(公告)日：2002-06-04

申请号：US09609441

申请日：2000-07-03

申请人： P. J. Ireland ,  Howard Rhodes ,  Sujit Sharan ,  Sukesh Sandhu ,  Tim O'Brien ,  Tim Johnson

发明人： P. J. Ireland ,  Howard Rhodes ,  Sujit Sharan ,  Sukesh Sandhu ,  Tim O'Brien ,  Tim Johnson

IPC分类号： C23C1434

CPC分类号： C23C14/35 ,  C23C14/046 ,  H01L21/762 ,  H01L21/76877

摘要： An improved sputtering process increases the perpendicularity of the sputtered flux to the target surface by bombarding the target with both low and high mass ions, with low mass ions predominating, packing the target with both low and high mass implanted ions, and causing target atoms ejected as a result of high mass incident ions to have a higher probability of perpendicular or near perpendicular ejection. An alternative improved sputtering process bombards the target with both low and high mass ions, with high mass ions predominating, resulting in a higher sputter rate than achievable with either the high or low mass species alone. Including in either process as the high or the low mass species a species having a lower ionization energy than a standard species allows a reduced pressure plasma, resulting in less scattering of the sputtered flux. A low ionization energy species may also be employed to assist in striking a plasma before sputtering by a single species during deposition.

摘要翻译： 改进的溅射工艺通过以低质量离子和高质量离子轰击靶，通过以低质量离子为主来增加溅射通量对目标表面的垂直度，用低质量和高质量注入离子填充目标，并引起目标原子喷出 作为高质量入射离子的结果具有更高的垂直或近似垂直喷射的概率。 一种替代的改进的溅射工艺用低和高质量离子轰击靶，以高质量离子为主，导致比单独使用高质量或低质量物质可实现的更高的溅射速率。 在任一过程中，作为高质量或低质量物质，具有比标准物质更低的电离能的物质允许减压等离子体，导致溅射通量的较少散射。 也可以使用低电离能种来在沉积期间通过单一物质在溅射之前帮助击打等离子体。

公开(公告)号：US06395128B2

公开(公告)日：2002-05-28

申请号：US09026042

申请日：1998-02-19

申请人： Sujit Sharan ,  Gurtej S. Sandhu ,  Paul Smith ,  Mei Chang

发明人： Sujit Sharan ,  Gurtej S. Sandhu ,  Paul Smith ,  Mei Chang

IPC分类号： H05H100

CPC分类号： H01J37/32174 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/321 ,  Y10S438/961

摘要： Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In accordance with a preferred implementation, a reaction chamber includes first and second electrodes operably associated therewith. A single RF power generator is connected to an RF power splitter which splits the RF power and applies the split power to both the first and second electrodes. Preferably, power which is applied to both electrodes is in accordance with a power ratio as between electrodes which is other than a 1:1 ratio. In accordance with one preferred aspect, the reaction chamber comprises part of a parallel plate PECVD system. In accordance with another preferred aspect, the reaction chamber comprises part of an inductive coil PECVD system. The power ratio is preferably adjustable and can be varied. One manner of effecting a power ratio adjustment is to vary respective electrode surface areas. Another manner of effecting the adjustment is to provide a power splitter which enables the output power thereof to be varied. PECVD processing methods are described as well.

公开(公告)号：US06340637B2

公开(公告)日：2002-01-22

申请号：US09730038

申请日：2000-12-05

申请人： Ravi Iyer ,  Sujit Sharan

发明人： Ravi Iyer ,  Sujit Sharan

IPC分类号： H01L2144

CPC分类号： C23C16/08 ,  H01L21/28556 ,  H01L21/28568 ,  Y10S438/909

摘要： A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5. The reaction gases for the improved process are titanium tetrachloride and a hydrocarbon gas, which for a preferred embodiment of the process is methane. The reaction is carried out in a plasma environment created by a radio frequency source greater than 10 KHz. The key to obtaining titanium metal as a reaction product, rather than titanium carbide, is to set the plasma sustaining electrical power within a range that will remove just one hydrogen atom from each molecule of the hydrocarbon gas. In a preferred embodiment of the process, highly reactive methyl radicals (CH3—) are formed from methane gas. These radicals attack the titanium-chlorine bonds of the tetrachloride molecule and form chloromethane, which is evacuated from the chamber as it is formed. Titanium metal deposits an a wafer or other substrate that has been heated to a temperature within a preferred range of 200-500° C.

摘要翻译： 公开了一种通过化学气相沉积沉积钛金属层的新工艺。 该方法即使在具有大于1:5的纵横比的沟槽和接触开口中也提供具有高度保形性的沉积钛层。 用于改进方法的反应气体是四氯化钛和烃气体，其中该方法的优选实施方案是甲烷。 该反应在由大于10KHz的射频源产生的等离子体环境中进行。 获得钛金属作为反应产物而不是碳化钛的关键是将等离子体维持电功率设置在仅从烃气体的每个分子除去一个氢原子的范围内。 在该方法的优选实施方案中，由甲烷气体形成高反应性甲基（CH 3 - ）。 这些自由基攻击四氯化碳分子的钛 - 氯键，并形成氯甲烷，其形成时从室中排出。 钛金属沉积了已被加热到200-500℃的优选范围内的晶片或其它基底。

公开(公告)号：US06291341B1

公开(公告)日：2001-09-18

申请号：US09249478

申请日：1999-02-12

申请人： Sujit Sharan ,  Gurtej S. Sandhu

发明人： Sujit Sharan ,  Gurtej S. Sandhu

IPC分类号： H01L214763

CPC分类号： C23C16/14 ,  C23C16/08 ,  C23C16/34 ,  H01J37/32321 ,  H01L21/28556 ,  H01L21/28568 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/04941 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2224/4554

摘要： A process for PECVD of selected material films on a substrate comprising the steps of placing a substrate in a PECVD chamber and maintaining the chamber under vacuum pressure while introducing a precursor gas, a reactant gas, and an ionization enhancer agent into the chamber. A plasma is generated from the gases within the chamber. The energy generating the plasma causes the formation of charged species. The resulting charged species of the ionization enhancer agent assists in the formation of chemically reactive species of at least the precursor.

摘要翻译： 一种用于衬底上所选材料膜的PECVD的方法，包括以下步骤：将衬底放置在PECVD腔室中，并将腔室保持在真空压力下，同时将前体气体，反应气体和电离增强剂引入腔室。 从室内的气体产生等离子体。 产生等离子体的能量导致带电物质的形成。 所得到的电离增强剂的带电物质有助于形成至少前体的化学反应性物质。

公开(公告)号：US06291289B1

公开(公告)日：2001-09-18

申请号：US09339890

申请日：1999-06-25

申请人： Howard E. Rhodes ,  Lyle D. Breiner ,  Philip J. Ireland ,  Trung Tri Doan ,  Gurtej S. Sandhu ,  Sujit Sharan

发明人： Howard E. Rhodes ,  Lyle D. Breiner ,  Philip J. Ireland ,  Trung Tri Doan ,  Gurtej S. Sandhu ,  Sujit Sharan

IPC分类号： H01L218242

摘要： Integrated circuitry capacitors and methods of forming the same are described. In accordance with one implementation, a capacitor plate is formed and a conductive layer of material is formed thereove. Preferably, the conductive layer of material is more conductive than the material from which the capacitor plate is formed. In a preferred implementation, the conductive layer of material comprises a titanium or titanium-containing layer. In another preferred implementation, the capacitor plate comprises an inner capacitor plate having an outer surface with a generally roughened surface area. In one aspect of this implementation, the roughened surface area comprises hemispherical grain polysilicon. Capacitors formed in accordance with the invention are particularly well suited for use in dynamic random access memory (DRAM) circuitry.

公开(公告)号：US06255216B1

公开(公告)日：2001-07-03

申请号：US09377265

申请日：1999-08-19

申请人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

发明人： Trung T. Doan ,  Gurtej Singh Sandhu ,  Kirk Prall ,  Sujit Sharan

IPC分类号： H01L2144

CPC分类号： H01L21/76843 ,  C23C16/02 ,  C23C16/0236 ,  C23C16/42 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76855

摘要： Methods arc provided for forming a contact in an integrated circuit by chemical vapor deposition (CVD). The methods include forming titanium silicide in the contact. One method includes forming titanium silicide by combining a titanium precursor in the presence of hydrogen, H2. Another method includes forming titanium silicide by combining titanium tetrachloride, TiCl4, in the presence of hydrogen. A further method includes forming titanium silicide by combining tetradimethyl amino titanium, Ti(N(CH3)2)4, in the presence of hydrogen. The methods may further include forming titanium in the contact.

摘要翻译： 提供了通过化学气相沉积（CVD）在集成电路中形成接触的方法。 所述方法包括在接触中形成硅化钛。 一种方法包括通过在氢气存在下将钛前体组合而形成硅化钛。 另一种方法包括在氢气存在下通过组合四氯化钛TiCl 4来形成硅化钛。 另一种方法包括在氢的存在下，通过组合四（二甲基氨基）钛，Ti（N（CH 3）2）4来形成硅化钛。 所述方法还可以包括在接触中形成钛。

公开(公告)号：US6159867A

公开(公告)日：2000-12-12

申请号：US378132

申请日：1999-08-19

申请人： Sujit Sharan ,  Gurtej S. Sandhu ,  Paul Smith ,  Mei Chang

发明人： Sujit Sharan ,  Gurtej S. Sandhu ,  Paul Smith ,  Mei Chang

IPC分类号： H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/31 ,  C23F1/02 ,  H01L21/469

CPC分类号： H01J37/32174 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/321 ,  Y10S438/961

摘要： Plasma enhanced chemical vapor deposition (PECVD) reactors and methods of effecting the same are described. In accordance with a preferred implementation, a reaction chamber includes first and second electrodes operably associated therewith. A single RF power generator is connected to an RF power splitter which splits the RF power and applies the split power to both the first and second electrodes. Preferably, power which is applied to both electrodes is in accordance with a power ratio as between electrodes which is other than a 1:1 ratio. In accordance with one preferred aspect, the reaction chamber comprises part of a parallel plate PECVD system. In accordance with another preferred aspect, the reaction chamber comprises part of an inductive coil PECVD system. The power ratio is preferably adjustable and can be varied. One manner of effecting a power ratio adjustment is to vary respective electrode surface areas. Another manner of effecting the adjustment is to provide a power splitter which enables the output power thereof to be varied. PECVD processing methods are described as well.

公开(公告)号：US6086442A

公开(公告)日：2000-07-11

申请号：US259231

申请日：1999-03-01

申请人： Gurtej S. Sandhu ,  Sujit Sharan

发明人： Gurtej S. Sandhu ,  Sujit Sharan

IPC分类号： H01J9/02

CPC分类号： H01J9/025

摘要： The invention comprises methods of forming field emission devices. In but one implementation, a method of forming a field emission device includes forming an electron emission substrate comprising emitters and an electrically conductive extraction grid formed outwardly of the emitters. The extraction grid is supported and spaced from the emitters by an insulative mass. An electrically conductive layer is substantially selectively deposited over the grid and emitters relative to the insulative mass. After the depositing, the electron emission substrate is joined with an electron collector substrate. In one implementation, a method of forming a field emission device includes depositing an electrically conductive layer over the grid and emitters, with the depositing forming the electrically conductive layer over at least some exposed surfaces of the insulative mass. The conductive layer is etched away from the insulative mass while leaving at least a portion of the conductive layer remaining over outermost portions of the emitters. After the etching, the electron emission substrate is joined with an electron collector substrate. In one implementation, an electrically conductive layer is deposited over the grid and emitters. Only a portion of the electrically conductive layer is etched away from the grid and emitters after the depositing. After the etching, the electron emission substrate is joined with an electron collector substrate.

摘要翻译： 本发明包括形成场致发射器件的方法。 在一个实施方案中，形成场致发射器件的方法包括形成包括发射体的电子发射衬底和形成在发射器外侧的导电提取栅格。 提取格栅通过绝缘质量被支撑并与发射器隔开。 相对于绝缘体，导电层基本上选择性地沉积在电网和发射体上。 在沉积之后，电子发射衬底与电子收集器衬底接合。 在一个实施方案中，形成场致发射器件的方法包括在栅极和发射极上沉积导电层，沉积物在绝缘物质的至少一些暴露表面上形成导电层。 导电层被蚀刻离开绝缘块，同时留下至少一部分导电层保留在发射器的最外部分之上。 在蚀刻之后，电子发射衬底与电子收集器衬底接合。 在一个实施方案中，导电层沉积在栅格和发射体上。 在沉积之后，只有一部分导电层被蚀刻离开栅格和发射体。 在蚀刻之后，电子发射衬底与电子收集器衬底接合。