Abstract:
A method includes storing data in a memory, which includes multiple strings of analog memory cells arranged in a three-dimensional (3-D) configuration having a first dimension associated with bit lines, a second dimension associated with word lines and a third dimension associated with sections, such that each string is associated with a respective bit line and a respective section and includes multiple memory cells that are connected to the respective word lines. For a group of the strings, respective values of a property of the strings in the group are evaluated. Source-side voltages are calculated for the respective strings in the group, depending on the respective values of the property, and respective source-sides of the strings in the group are biased with the corresponding source-side voltages. A memory operation is performed on the strings in the group while the strings are biased with the respective source-side voltages.
Abstract:
A method, in a memory including multiple analog memory cells, includes segmenting a group of the memory cells into a common section and at least first and second dedicated sections. Each dedicated section corresponds to a read threshold that is used for reading a data page to be stored in the group. Data to be stored in the group is jointly balanced over a union of the common section and the first dedicated section, and over the union of the common section and the second dedicated section, to create a balanced page such that for each respective read threshold an equal number of memory cells will be programmed to assume programming levels that are separated by the read threshold. The balanced page is stored to the common and dedicated sections, and the read thresholds are adjusted based on detecting imbalance between data values in readout results of the balanced page.
Abstract:
A method includes, in a memory including analog memory cells, storing first data in a group of the memory cells using a first type of storage command that writes respective analog values to the memory cells in the group. Second data is stored in the memory cells in the group, in addition to the first data, using a second type of storage command that modifies the respective analog values of the memory cells in the group. Upon detecting imminent interruption of electrical power to the memory during storage of the second data, a switch is made to perform an alternative storage operation that is faster than the second type of storage command and protects at least the first data from the interruption.
Abstract:
A method for data storage includes generating a first scrambling sequence and a second scrambling sequence that is different from the first scrambling sequence. A combined sequence, which is equal to a bit-wise XOR between the first and second scrambling sequences, is generated. Data is copied from a first location in a memory in which the data is scrambled using the first scrambling sequence, to a second location in the memory in which the data is to be scrambled using the second scrambling sequence, by reading the data from the first location, scrambling the read data using the combined sequence, and then storing the data in the second location.
Abstract:
A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays.
Abstract:
A method includes performing a read operation that reads data from a group of analog memory cells using at least one read threshold, to produce readout results. A detection is made that the read threshold is set in a restricted range that causes the readout results not to reflect the read threshold. The data is reproduced from the group of the memory cells while compensating for the read threshold that is set in the restricted range.
Abstract:
A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays.
Abstract:
A method includes measuring a saturation current flowing through one or more analog memory cells. A wear level of the memory cells is deduced from the measured saturation current. Storage of data in the memory cells is configured based on the deduced wear level.
Abstract:
A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays.