Enhanced data storage in 3-D memory using string-specific source-side biasing
    111.
    发明授权
    Enhanced data storage in 3-D memory using string-specific source-side biasing 有权
    使用字符串特定的源侧偏移增强了3-D存储器中的数据存储

    公开(公告)号:US09007835B2

    公开(公告)日:2015-04-14

    申请号:US13865351

    申请日:2013-04-18

    Applicant: Apple Inc.

    CPC classification number: G11C16/10 G11C16/0483 G11C16/3454 G11C16/3459

    Abstract: A method includes storing data in a memory, which includes multiple strings of analog memory cells arranged in a three-dimensional (3-D) configuration having a first dimension associated with bit lines, a second dimension associated with word lines and a third dimension associated with sections, such that each string is associated with a respective bit line and a respective section and includes multiple memory cells that are connected to the respective word lines. For a group of the strings, respective values of a property of the strings in the group are evaluated. Source-side voltages are calculated for the respective strings in the group, depending on the respective values of the property, and respective source-sides of the strings in the group are biased with the corresponding source-side voltages. A memory operation is performed on the strings in the group while the strings are biased with the respective source-side voltages.

    Abstract translation: 一种方法包括将数据存储在存储器中,其包括以具有与位线相关联的第一维度的三维(3-D)配置布置的多个模拟存储器单元串,与字线相关联的第二维度和与第三维度相关联的第三维度 具有部分,使得每个字符串与相应的位线和相应的部分相关联,并且包括连接到各个字线的多个存储器单元。 对于一组字符串,对组中字符串的属性的各个值进行评估。 根据属性的各个值,针对组中的各个串来计算源侧电压,并且组中的串的各个源侧被相应的源极侧电压偏置。 当串被相应的源侧电压偏置时,对组中的串执行存储器操作。

    THRESHOLD ADJUSTMENT USING DATA VALUE BALANCING IN ANALOG MEMORY DEVICE
    112.
    发明申请
    THRESHOLD ADJUSTMENT USING DATA VALUE BALANCING IN ANALOG MEMORY DEVICE 有权
    在模拟存储器件中使用数据值平衡进行阈值调整

    公开(公告)号:US20140325310A1

    公开(公告)日:2014-10-30

    申请号:US13908041

    申请日:2013-06-03

    Applicant: Apple Inc.

    Abstract: A method, in a memory including multiple analog memory cells, includes segmenting a group of the memory cells into a common section and at least first and second dedicated sections. Each dedicated section corresponds to a read threshold that is used for reading a data page to be stored in the group. Data to be stored in the group is jointly balanced over a union of the common section and the first dedicated section, and over the union of the common section and the second dedicated section, to create a balanced page such that for each respective read threshold an equal number of memory cells will be programmed to assume programming levels that are separated by the read threshold. The balanced page is stored to the common and dedicated sections, and the read thresholds are adjusted based on detecting imbalance between data values in readout results of the balanced page.

    Abstract translation: 一种在包括多个模拟存储器单元的存储器中的方法包括将一组存储器单元分成公共部分和至少第一和第二专用部分。 每个专用部分对应于用于读取要存储在组中的数据页的读取阈值。 要存储在组中的数据通过公共部分和第一专用部分的并集,并且在公共部分和第二专用部分的联合之间共同平衡,以创建平衡页面,使得对于每个相应的读取阈值 相同数量的存储器单元将被编程为假设由读取阈值分开的编程电平。 平衡页面存储到公共和专用部分,并且基于检测平衡页面的读出结果中的数据值之间的不平衡来调整读取阈值。

    TECHNIQUES FOR REDUCING POWER-DOWN TIME IN NON-VOLATILE MEMORY DEVICES
    113.
    发明申请
    TECHNIQUES FOR REDUCING POWER-DOWN TIME IN NON-VOLATILE MEMORY DEVICES 有权
    在非易失性存储器件中减少掉电时间的技术

    公开(公告)号:US20140317365A1

    公开(公告)日:2014-10-23

    申请号:US13867363

    申请日:2013-04-22

    Applicant: APPLE INC.

    Abstract: A method includes, in a memory including analog memory cells, storing first data in a group of the memory cells using a first type of storage command that writes respective analog values to the memory cells in the group. Second data is stored in the memory cells in the group, in addition to the first data, using a second type of storage command that modifies the respective analog values of the memory cells in the group. Upon detecting imminent interruption of electrical power to the memory during storage of the second data, a switch is made to perform an alternative storage operation that is faster than the second type of storage command and protects at least the first data from the interruption.

    Abstract translation: 一种方法包括在包括模拟存储器单元的存储器中,使用将相应的模拟值写入组中的存储器单元的第一类型的存储命令来存储一组存储器单元中的第一数据。 除了第一数据之外,使用修改组中的存储器单元的相应模拟值的第二类型的存储命令,将第二数据存储在组中的存储器单元中。 当在第二数据的存储期间检测到对存储器的电力的即将中断时,使交换机执行比第二类型的存储命令更快的替代存储操作,并且至少保护第一数据免受中断。

    DATA SCRAMBLING IN MEMORY DEVICES USING COMBINED SEQUENCES
    114.
    发明申请
    DATA SCRAMBLING IN MEMORY DEVICES USING COMBINED SEQUENCES 审中-公开
    使用组合序列在存储器件中进行数据扫描

    公开(公告)号:US20140310534A1

    公开(公告)日:2014-10-16

    申请号:US13862549

    申请日:2013-04-15

    Applicant: APPLE INC.

    Abstract: A method for data storage includes generating a first scrambling sequence and a second scrambling sequence that is different from the first scrambling sequence. A combined sequence, which is equal to a bit-wise XOR between the first and second scrambling sequences, is generated. Data is copied from a first location in a memory in which the data is scrambled using the first scrambling sequence, to a second location in the memory in which the data is to be scrambled using the second scrambling sequence, by reading the data from the first location, scrambling the read data using the combined sequence, and then storing the data in the second location.

    Abstract translation: 一种用于数据存储的方法包括产生与第一加扰序列不同的第一加扰序列和第二加扰序列。 产生等于第一和第二加扰序列之间的逐位XOR的组合序列。 通过从第一个数据读取数据,将数据从数据被加扰的存储器中的第一位置使用第一加扰序列复制到数据要使用第二加扰序列进行加扰的存储器中的第二位置 位置,使用组合序列加扰读取数据,然后将数据存储在第二位置。

    EFFICIENT DATA STORAGE IN MULTI-PLANE MEMORY DEVICES
    115.
    发明申请
    EFFICIENT DATA STORAGE IN MULTI-PLANE MEMORY DEVICES 有权
    多平面存储器件中的有效数据存储

    公开(公告)号:US20140229798A1

    公开(公告)日:2014-08-14

    申请号:US14257268

    申请日:2014-04-21

    Applicant: Apple Inc.

    Abstract: A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays.

    Abstract translation: 一种用于数据存储的方法包括:首先将数据页序列存储在包括多个存储器阵列的存储器中,使得序列中的连续数据页被交替地存储在第一数量的存储器阵列中。 将初始存储的数据页重新排列在存储器中,以便将序列中的连续数据页存储在小于第一数量的第二数量的存储器阵列中。 从第二数量的存储器阵列中读取重新排列的数据页。

    Efficient data storage in multi-plane memory devices
    117.
    发明授权
    Efficient data storage in multi-plane memory devices 有权
    在多平面存储设备中高效的数据存储

    公开(公告)号:US08743603B2

    公开(公告)日:2014-06-03

    申请号:US13890704

    申请日:2013-05-09

    Applicant: Apple Inc.

    Abstract: A method for data storage includes initially storing a sequence of data pages in a memory that includes multiple memory arrays, such that successive data pages in the sequence are stored in alternation in a first number of the memory arrays. The initially-stored data pages are rearranged in the memory so as to store the successive data pages in the sequence in a second number of the memory arrays, which is less than the first number. The rearranged data pages are read from the second number of the memory arrays.

    Abstract translation: 一种用于数据存储的方法包括:首先将数据页序列存储在包括多个存储器阵列的存储器中,使得序列中的连续数据页被交替地存储在第一数量的存储器阵列中。 将初始存储的数据页重新排列在存储器中,以便将序列中的连续数据页存储在小于第一数量的第二数量的存储器阵列中。 从第二数量的存储器阵列中读取重新排列的数据页。

    Estimation of memory cell wear level based on saturation current
    118.
    发明授权
    Estimation of memory cell wear level based on saturation current 有权
    基于饱和电流估计存储单元磨损水平

    公开(公告)号:US08717826B1

    公开(公告)日:2014-05-06

    申请号:US13710938

    申请日:2012-12-11

    Applicant: Apple Inc.

    CPC classification number: G11C16/349

    Abstract: A method includes measuring a saturation current flowing through one or more analog memory cells. A wear level of the memory cells is deduced from the measured saturation current. Storage of data in the memory cells is configured based on the deduced wear level.

    Abstract translation: 一种方法包括测量流过一个或多个模拟存储器单元的饱和​​电流。 从测量的饱和电流推导出存储器单元的磨损水平。 基于推导的磨损水平来配置存储单元中的数据存储。

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