公开(公告)号：US07329594B2

公开(公告)日：2008-02-12

申请号：US10607542

申请日：2003-06-27

申请人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

发明人： Akihisa Shimomura ,  Osamu Nakamura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Atsuo Isobe ,  Tamae Takano ,  Kouki Inoue

IPC分类号： H01L21/425

CPC分类号： H01L21/02683 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78675

摘要： An impurity of one conductivity type is ionized and accelerated by electric field before being implanted into a semiconductor layer to form a high concentration impurity region near its surface. Then the semiconductor layer is irradiated with continuous wave laser light for melting and crystallization or recrystallization, through which a region where the concentration of the impurity is constant is formed in the semiconductor layer. The continuous wave laser light irradiation may bring the semiconductor layer to the crystalline phase from the amorphous phase as long as the impurity element is re-distributed. The impurity is segregated through this process to newly create a high concentration region. However, this region is removed and no problem arises.

摘要翻译： 一种导电类型的杂质在被注入半导体层之前被电场电离和加速，以在其表面附近形成高浓度杂质区。 然后用连续波激光照射半导体层进行熔融和结晶或再结晶，半导体层中形成杂质浓度恒定的区域。 只要杂质元素被重新分布，连续波激光照射可以使半导体层从非晶相进入结晶相。 通过该过程将杂质分离，以产生新的高浓度区域。 然而，该区域被移除并且没有问题出现。

公开(公告)号：US07326961B2

公开(公告)日：2008-02-05

申请号：US11107822

申请日：2005-04-18

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tamae Takano ,  Hidekazu Miyairi

IPC分类号： H01L29/72

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1281

摘要： To provide devices relating to a manufacturing method for a semiconductor device using a laser crystallization method, which is capable of reducing a cost involved in a design change, preventing a grain boundary from developing in a channel formation region of a TFT, and preventing a remarkable reduction in mobility of the TFT, a decrease in an ON current, and an increase in an OFF current due to the grain boundary and to a semiconductor device formed by using the manufacturing method. In a semiconductor device according to the present invention, among a plurality of TFTs formed on a base film, some TFTs are electrically connected to form logic elements. The plurality of logic elements are used to form a circuit. The base film has a plurality of projective portions having a rectangular or stripe shape. Island-like semiconductor films included in each of the plurality of TFTs are formed between the plurality of projective portions and also, are crystallized by a laser light scanned in a longitudinal direction of the projective portions.

摘要翻译： 为了提供与使用激光结晶法的半导体器件的制造方法相关的装置，其能够降低设计变化中涉及的成本，防止晶界在TFT的沟道形成区域中发展，并且防止显着 TFT的迁移率的降低，导通电流的降低以及由于晶界引起的关断电流的增加以及通过使用该制造方法形成的半导体器件。 在根据本发明的半导体器件中，在形成在基膜上的多个TFT中，一些TFT电连接形成逻辑元件。 多个逻辑元件用于形成电路。 基膜具有多个具有矩形或条状的突出部分。 包含在多个TFT中的多个TFT中的岛状半导体膜形成在多个投影部之间，并且通过沿着投影部的纵向扫描的激光而结晶化。

公开(公告)号：US07282737B2

公开(公告)日：2007-10-16

申请号：US11321642

申请日：2005-12-30

申请人： Hiroshi Shibata ,  Atsuo Isobe

发明人： Hiroshi Shibata ,  Atsuo Isobe

IPC分类号： H01L29/04

CPC分类号： H01L27/1248 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/40 ,  H01L27/124 ,  H01L27/1255

摘要： To provide a liquid crystal display device having high quality display with a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a layer that is different from a gate electrode so that the capacitor wiring is arranged in parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of adjacent pixels can be avoided, thereby obtaining satisfactory display images.

摘要翻译： 为了提供具有高开口率的高质量显示的液晶显示装置，同时确保足够的存储电容器（Cs），并且同时通过将电容器布线的负载（像素写入电流）分散在 及时有效减轻负荷。 扫描线形成在与栅电极不同的层上，使得电容器布线与信号线并联布置。 每个像素通过电介质连接到单独独立的电容器布线。 因此，可以避免由相邻像素的写入电流引起的电容器布线的电位变化，从而获得令人满意的显示图像。

公开(公告)号：US20070141816A1

公开(公告)日：2007-06-21

申请号：US11704214

申请日：2007-02-09

申请人： Hidekazu Miyairi ,  Atsuo Isobe ,  Tomoaki Moriwaka ,  Akihisa Shimomura

发明人： Hidekazu Miyairi ,  Atsuo Isobe ,  Tomoaki Moriwaka ,  Akihisa Shimomura

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02691 ,  C30B1/00 ,  C30B29/06 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/2022 ,  H01L21/2026 ,  H01L21/76825 ,  H01L21/76828 ,  H01L27/1281 ,  H01L29/045 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78654 ,  H01L29/78675 ,  H01L29/78684

摘要： The objective of the invention is to provide a method of fabricating semiconductor device using a laser crystallization method capable of preventing a grain boundary from being formed on the channel-forming region of a TFT and preventing the mobility of the TFT from extremely deteriorating, on-current from decreasing, or off-current from increasing due to a grain boundary and a semiconductor device fabricated by the fabrication method. Striped (banded) or rectangular concave and convex portions are formed. Then, a semiconductor film formed on an insulating film is irradiated with a laser beam diagonally to the longitudinal direction of concave and convex portions on the insulating film.

公开(公告)号：US07211502B2

公开(公告)日：2007-05-01

申请号：US10806353

申请日：2004-03-23

申请人： Shunpei Yamazaki ,  Tetsuji Yamaguchi ,  Atsuo Isobe

发明人： Shunpei Yamazaki ,  Tetsuji Yamaguchi ,  Atsuo Isobe

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  G02F1/136227 ,  H01L21/76882

摘要： A method for manufacturing a semiconductor device in which lower cost can be realized, a wiring with favorable coverage can be formed in a contact hole having a large aspect ratio, wiring capacitance can be reduced and a multilayer wiring can be formed, can be provided. In order to obtain the semiconductor device, the following steps are required; forming a first conductive film which serves as a barrier so as to be in contact with an organic insulating film with an opening portion formed; forming a second conductive film including aluminum so as to be in contact with the first conductive film; or forming a nitride film so as to be in contact with the organic insulating film with the opening portion formed; patterning the nitride film; forming a first conductive film which serves as a barrier so as to be in contact with the nitride film; forming a second conductive film including aluminum so as to be in contact with first conductive film; and thereafter selectively performing a heat treatment under reduced pressure or in normal pressure, and flattening the second conductive film.

摘要翻译： 一种制造可以实现更低成本的半导体器件的方法，可以在具有大纵横比的接触孔中形成具有良好覆盖的布线，可以减少布线电容并且可以形成多层布线。 为了获得半导体器件，需要以下步骤： 形成作为屏障的第一导电膜，以与形成有开口部的有机绝缘膜接触; 形成包含铝的第二导电膜以与第一导电膜接触; 或形成氮化物膜，以与形成有开口部的有机绝缘膜接触; 图案化氮化膜; 形成用作阻挡层以与氮化膜接触的第一导电膜; 形成包含铝的第二导电膜以与第一导电膜接触; 然后选择性地在减压或常压下进行热处理，并使第二导电膜变平。

公开(公告)号：US20070052021A1

公开(公告)日：2007-03-08

申请号：US11503414

申请日：2006-08-14

申请人： Atsuo Isobe ,  Keiko Saito ,  Tomohiko Sato

发明人： Atsuo Isobe ,  Keiko Saito ,  Tomohiko Sato

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L29/4908 ,  H01L29/66757 ,  H01L29/78621

摘要： It is an object of an invention disclosed in the present specification to provide a transistor having low contact resistance. In the transistor, a semiconductor film including an impurity element imparting P-type or N-type conductivity, an insulating film formed thereover, and an electrode or a wiring that is electrically connected to the semiconductor film through a contact hole formed at least in the insulating film are included; the semiconductor film has a first range of a concentration of the impurity element (1×1020/cm3 or less) that is included in a deeper region than predetermined depth, and a second range of a concentration of the impurity element (more than 1×1020/cm3) that is included in a shallower region than the predetermined depth; and a deeper region than a portion in contact with the electrode or the wiring in the semiconductor film is in the first range of the concentration of the impurity element.

摘要翻译： 本说明书中公开的发明的目的是提供具有低接触电阻的晶体管。 在晶体管中，包括赋予P型或N型导电性的杂质元素的半导体膜，形成在其上的绝缘膜，以及电极或布线，其通过至少形成在所述半导体膜上的接触孔与半导体膜电连接 包括绝缘膜; 半导体膜具有包含在比预定深度更深的区域中的杂质元素的浓度的第一范围（1×10 20 / cm 3以下），以及 包含在比预定深度更浅的区域中的杂质元素的浓度的第二范围（大于1×10 20 / cm 3）; 并且比半导体膜中与电极或布线接触的部分更深的区域在杂质元素的浓度的第一范围内。

公开(公告)号：US20070015323A1

公开(公告)日：2007-01-18

申请号：US11513054

申请日：2006-08-31

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi ,  Mai Akiba

IPC分类号： H01L21/84

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Depressions and projections with stripe shape or rectangular shape are formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film along the depressions and projections with stripe shape of the insulating film, or along a longitudinal axis direction or a transverse axis direction of the rectangular shape. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave laser light may also be used.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法以及通过使用能够防止在TFT沟道形成区域中形成晶界的激光结晶化方法而制造的半导体器件，并且是 能够防止TFT迁移率的显着下降，导通电流的降低，以及由于晶界而导致的关断电流的增加。 形成具有条状或矩形形状的凹凸和凹凸。 然后将连续波激光照射到沿绝缘膜条纹形状的凹凸形状的绝缘膜上形成的半导体膜上，或者沿着矩形的长轴方向或横轴方向照射。 另外，尽管在这一点上最好使用连续波激光，但也可以使用脉波激光。

公开(公告)号：US20060281318A1

公开(公告)日：2006-12-14

申请号：US11467000

申请日：2006-08-24

申请人： Atsuo Isobe ,  Satoru Saito ,  Saishi Fujikawa

发明人： Atsuo Isobe ,  Satoru Saito ,  Saishi Fujikawa

IPC分类号： H01L21/311

CPC分类号： H01L21/02686 ,  H01L21/02672 ,  H01L21/2022 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78675 ,  Y10S438/978

摘要： Since sodium contained in glass, or glass itself has low heat resistance; a CPU fabricated using a TFT formed over a glass substrate or the like has not been obtained. In the case of operating a CPU with high-speed, the length of a gate (gate length) of a TFT is required to be shorter. However, since a glass substrate has large deflection, a gate electrode cannot have been etched to have a gate length short enough to be used for a CPU. According to the invention, a conductive film is formed over a crystalline semiconductor film formed over a glass substrate, a mask is formed over the conductive film, and the conductive film is etched by using the mask; thus, a thin film transistor with a gate length of 1.0 μm or less is formed. In particular, the crystalline semiconductor film is formed by crystallizing an amorphous semiconductor film formed over a glass substrate by laser irradiation.

摘要翻译： 由于玻璃中含有的钠或玻璃本身具有低耐热性; 没有获得使用在玻璃基板等上形成的TFT制造的CPU。 在高速运行CPU的情况下，TFT的栅极长度（栅极长度）要求较短。 然而，由于玻璃基板具有大的偏转，所以栅极电极不能被蚀刻以具有足够短的栅极长度以用于CPU。 根据本发明，在形成在玻璃基板上的结晶半导体膜上形成导电膜，在导电膜上形成掩模，并使用掩模蚀刻导电膜; 因此，形成栅极长度为1.0μm以下的薄膜晶体管。 特别地，通过激光照射使在玻璃基板上形成的非晶半导体膜结晶化而形成结晶半导体膜。

公开(公告)号：US07148507B2

公开(公告)日：2006-12-12

申请号：US11013539

申请日：2004-12-17

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： H01L21/84 ,  H01L31/36

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US07148092B2

公开(公告)日：2006-12-12

申请号：US10352066

申请日：2003-01-28

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

IPC分类号： H01L21/84

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

摘要： To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements. The method of the present invention includes: forming an insulating film with an opening on a substrate having an insulating surface; forming on the insulating film and over the opening an amorphous semiconductor film or a polycrystalline semiconductor film that has randomly-formed grain boundaries; forming a crystalline semiconductor film by melting the semiconductor film, pouring the melted semiconductor into the opening of the insulating film, and crystallizing or re-crystallizing the semiconductor film; and removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening to form a gate insulating film, which is in contact with the top face of the crystalline semiconductor film, and a gate electrode.