公开(公告)号：US20130284371A1

公开(公告)日：2013-10-31

申请号：US13932567

申请日：2013-07-01

Applicant: Naoki MATSUMOTO ,  Chishio Koshimizu ,  Akira Koshiishi

Inventor： Naoki MATSUMOTO ,  Chishio Koshimizu ,  Akira Koshiishi

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.

Abstract translation: 等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。 第一电极和第二电极在处理容器内彼此相对设置。 第一电极包括外部部分和面向第二电极的内部部分，使得外部部分围绕内部部分。 RF电源被配置为向第一电极的外部施加RF功率。 DC电源被配置为向第一电极的内部施加DC电压。 处理气体供应单元被配置为将处理气体供应到处理容器中，其中处理气体的等离子体在第一电极和第二电极之间产生。

公开(公告)号：US08486221B2

公开(公告)日：2013-07-16

申请号：US12700177

申请日：2010-02-04

Applicant: Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo ,  Masashi Saito

Inventor： Chishio Koshimizu ,  Jun Yamawaku ,  Tatsuo Matsudo ,  Masashi Saito

IPC: C23F1/00 ,  C23F1/08

CPC classification number: H05H1/24 ,  H01J37/32091 ,  H01J37/32522 ,  H01J37/32642 ,  H01J2237/334

Abstract: There are provided a method of heating a focus ring and a plasma etching apparatus, capable of simplifying a structure of a heating mechanism without a dummy substrate. The plasma etching apparatus includes a vacuum processing chamber; a lower electrode serving as a mounting table for mounting a substrate thereon; an upper electrode provided to face the lower electrode; a gas supply unit for supplying a processing gas; a high frequency power supply for supplying a high frequency power to the lower electrode to generate a plasma of the processing gas; and a focus ring provided on the lower electrode to surround a periphery of the substrate. In the plasma etching apparatus, the focus ring is heated by irradiating a heating light thereto from a light source provided outside the vacuum processing chamber.

Abstract translation: 提供了一种加热聚焦环和等离子体蚀刻装置的方法，其能够简化没有虚设基板的加热机构的结构。 等离子体蚀刻装置包括真空处理室; 用作将基板安装在其上的安装台的下电极; 设置成面向下电极的上电极; 用于提供处理气体的气体供应单元; 用于向下电极提供高频电力以产生处理气体的等离子体的高频电源; 以及设置在下电极上以围绕基板的周边的聚焦环。 在等离子体蚀刻装置中，通过从设置在真空处理室外侧的光源照射加热光来对聚焦环进行加热。

公开(公告)号：US08431035B2

公开(公告)日：2013-04-30

申请号：US12465436

申请日：2009-05-13

Applicant: Manabu Iwata ,  Chishio Koshimizu ,  Yohei Yamazawa

Inventor： Manabu Iwata ,  Chishio Koshimizu ,  Yohei Yamazawa

IPC: H01L21/3065 ,  C23C16/00 ,  C23C16/50 ,  C23C16/503 ,  C23C16/52 ,  B44C1/22

CPC classification number: H01J37/32091 ,  H01J37/32183

Abstract: A plasma processing apparatus for processing a substrate by using a plasma includes a processing chamber for accommodating and processing the substrate therein, a lower electrode for mounting the substrate thereon in the processing chamber, an upper electrode disposed to face the lower electrode in the processing chamber, a radio frequency power supply for supplying a radio frequency power to at least one of the lower and the upper electrode, to thereby generate the plasma between the lower and the upper electrode, and an electrical characteristic control unit for adjusting an impedance of a circuit at the side of an electrode to the plasma for a frequency of at least one radio frequency wave present in the processing chamber such that the circuit does not resonate.

Abstract translation: 用于通过使用等离子体处理衬底的等离子体处理装置包括用于在其中容纳和处理衬底的处理室，用于将衬底安装在处理室中的下电极，设置成面对处理室中的下电极的上电极 ，用于向下电极和上电极中的至少一个提供射频电力的射频电源，从而在下电极和上电极之间产生等离子体;以及电特性控制单元，用于调节电路的阻抗 在等离子体的电极的侧面处于存在于处理室中的至少一个射频的频率，使得电路不共振。

公开(公告)号：US08342121B2

公开(公告)日：2013-01-01

申请号：US12056567

申请日：2008-03-27

Applicant: Chishio Koshimizu

Inventor： Chishio Koshimizu

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32559 ,  H01J37/32091 ,  H01J2237/022 ,  H01L21/67069

Abstract: A plasma processing apparatus, which generates a plasma by a radio frequency discharge in a processing chamber, includes a first member having a first front surface facing the plasma, and a first mating surface extending from the first front surface; and a second member having a second front surface that forms an angled portion together with the first front surface of the first member in a manner to face the plasma, and a second mating surface facing the first mating surface of the first member with a gap therebetween. In the angled portion, an opening portion of gap and an inner portion extending from the opening portion to at least an intermediate location of the gap are oriented along an extended straight line that bisects an angle between the first front surface of the first member and the second front surface of the second member.

Abstract translation: 一种等离子体处理装置，其通过处理室中的射频放电产生等离子体，包括具有面向等离子体的第一前表面的第一构件和从第一前表面延伸的第一配合表面; 以及具有第二前表面的第二构件，所述第二前表面以与所述等离子体相对的方式与所述第一构件的所述第一前表面一起形成成角度的部分，以及面对所述第一构件的所述第一配合表面的第二配合表面，其间具有间隙 。 在倾斜部分中，间隙的开口部分和从开口部分延伸到间隙的至少中间位置的内部部分沿着延伸的直线定向，该直线将第一部件的第一前表面和 第二构件的第二前表面。

公开(公告)号：US20120241092A1

公开(公告)日：2012-09-27

申请号：US13428512

申请日：2012-03-23

Applicant: Jun Yamawaku ,  Takafumi Kimura ,  Chishio Koshimizu

Inventor： Jun Yamawaku ,  Takafumi Kimura ,  Chishio Koshimizu

IPC: H05H1/24 ,  B44C1/22

CPC classification number: H01J37/32091 ,  H01J37/32669

Abstract: In the plasma processing apparatus 10, a processing space S is formed between a susceptor 12 and an upper electrode 13 facing the susceptor 12. The plasma processing apparatus 10 includes a magnetic field generating unit provided at a side of the upper electrode 13 opposite to the processing space S. The magnetic field generating unit includes a magnetic force line generating unit 27 having a pair of annular magnet rows 27a and 27b. The annular magnet rows 27a and 27b are provided at the side of the upper electrode 13 opposite to the processing space S and arranged concentrically when viewed from the top. In the magnetic force line generating unit 27, an angle θ1 formed by axial lines of magnets of the annular magnet rows 27a and 27b is set to be in a range of about 0°

Abstract translation: 在等离子体处理装置10中，在基座12和与基座12相对的上部电极13之间形成有处理空间S.等离子体处理装置10包括设在上侧电极13的与 处理空间S.磁场产生单元包括具有一对环形磁体排27a和27b的磁力线生成单元27。 环形磁体排27a和27b设置在上部电极13的与处理空间S相对的一侧，并且从顶部观察时同心地布置。 在磁力线产生单元27中，由环状磁体排27a和27b的磁体的轴线形成的角度θ1设定在约0°<1at; 1＆amp; nlE; 180°的范围内。

公开(公告)号：US20120207189A1

公开(公告)日：2012-08-16

申请号：US13428870

申请日：2012-03-23

Applicant: Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

Inventor： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC: G01K11/00

CPC classification number: G01K11/00 ,  G01K11/125

Abstract: A temperature measurement apparatus includes a light source; a first splitter that splits a light beam into a measurement beam and a reference beam; a reference beam reflector that reflects the reference beam; an optical path length adjustor; a second splitter that splits the reflected reference beam into a first reflected reference beam and a second reflected reference beam; a first photodetector that measures an interference between the first reflected reference beam and a reflected measurement beam obtained by the measurement beam reflected from a target object; a second photodetector that measures an intensity of the second reflected reference beam; and a temperature calculation unit. The temperature calculation unit calculates a location of the interference by subtracting an output signal of the second photodetector from an output signal of the first photodetector, and calculates a temperature of the target object from the calculated location of the interference.

Abstract translation: 温度测量装置包括光源; 第一分离器，其将光束分成测量光束和参考光束; 反射参考光束的参考光束反射器; 光路长度调节器; 第二分离器，其将反射的参考光束分成第一反射参考光束和第二反射参考光束; 测量第一反射参考光束与由目标物体反射的测量光束获得的反射测量光束之间的干涉的第一光电检测器; 第二光电检测器，其测量第二反射参考光束的强度; 和温度计算单元。 温度计算单元通过从第一光电检测器的输出信号减去第二光电检测器的输出信号来计算干扰的位置，并根据所计算的干扰位置计算目标对象的温度。

公开(公告)号：US08178444B2

公开(公告)日：2012-05-15

申请号：US12363992

申请日：2009-02-02

Applicant: Chishio Koshimizu ,  Taichi Hirano ,  Masanobu Honda ,  Shinji Himori

Inventor： Chishio Koshimizu ,  Taichi Hirano ,  Masanobu Honda ,  Shinji Himori

IPC: H01L21/311 ,  H01L21/302

CPC classification number: H01L21/67109 ,  H01J37/32009 ,  H01J37/3255 ,  H01J37/32724 ,  H01L21/67248 ,  H01L21/6831

Abstract: A substrate processing method that can eliminate unevenness in the distribution of plasma. The method is for a substrate processing apparatus that has a processing chamber in which a substrate is housed, a mounting stage that is disposed in the processing chamber and on which the substrate is mounted, and an electrode plate that is disposed in the processing chamber such as to face the mounting stage, the electrode plate being made of silicon and connected to a radio-frequency power source, and carries out plasma processing on the substrate. In the plasma processing, the temperature of the electrode plate is measured, and based on the measured temperature, the temperature of the electrode plate is maintained lower than a critical temperature at which the specific resistance value of the silicon starts changing.

Abstract translation: 能够消除等离子体分布不均匀的基板处理方法。 该方法是用于具有容纳基板的处理室的基板处理装置，设置在处理室中并安装有基板的安装台以及设置在处理室中的电极板 为了面对安装台，电极板由硅制成并连接到射频电源，并对基片执行等离子体处理。 在等离子体处理中，测量电极板的温度，并且基于测量的温度，电极板的温度保持低于硅的比电阻值开始变化的临界温度。

公开(公告)号：US08124539B2

公开(公告)日：2012-02-28

申请号：US12850391

申请日：2010-08-04

Applicant: Shosuke Endoh ,  Noriyuki Iwabuchi ,  Shigeaki Kato ,  Tomoya Okubo ,  Jun Hirose ,  Koichi Nagakura ,  Chishio Koshimizu ,  Kazuki Denpoh

Inventor： Shosuke Endoh ,  Noriyuki Iwabuchi ,  Shigeaki Kato ,  Tomoya Okubo ,  Jun Hirose ,  Koichi Nagakura ,  Chishio Koshimizu ,  Kazuki Denpoh

IPC: H01L21/302

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/6831

Abstract: A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.

Abstract translation: 具有聚焦环的等离子体处理装置能够大大提高聚焦环的冷却效率，同时防止其成本增加。 等离子体处理装置由具有静电卡盘和聚焦环的基座构成。 将要进行等离子体处理的晶片W安装在静电卡盘上。 聚焦环具有电介质材料部分和导电材料部分。 介电材料部分形成与静电卡盘接触设置的接触部分。 导电材料部分面对电介质材料部分的静电卡盘。

公开(公告)号：US20120037597A1

公开(公告)日：2012-02-16

申请号：US13206607

申请日：2011-08-10

Applicant: Chishio Koshimizu ,  Kazuki Denpoh

Inventor： Chishio Koshimizu ,  Kazuki Denpoh

IPC: C23F1/00 ,  C23C16/50 ,  C23C16/458 ,  C23F1/08 ,  H05H1/24

CPC classification number: H01J37/32091 ,  H01J37/32596 ,  H01J37/32697

Abstract: There is provided a plasma processing apparatus capable of performing a uniform plasma process on a substrate by controlling a plasma distribution within a chamber to a desired state and uniformizing a plasma density within the chamber. The plasma processing apparatus includes an evacuable chamber 11 for performing a plasma process on a wafer W; a susceptor 12 for mounting the wafer W within the chamber 11; an upper electrode plate 30a facing the susceptor 12 with a processing space S; a high frequency power supply 20 for applying a high frequency power to one of the susceptor 12 and the upper electrode plate 30a to generate plasma within the processing space S; and an inner wall member facing the processing space S. Hollow cathodes 31a to 31c are formed at the upper electrode plate 30a connected with a DC power supply 37 for adjusting a sheath voltage.

Abstract translation: 提供了一种等离子体处理装置，其能够通过将室内的等离子体分布控制到期望的状态并使室内的等离子体密度均匀化来在基板上执行均匀的等离子体处理。 等离子体处理装置包括用于对晶片W进行等离子体处理的可抽空室11; 用于将晶片W安装在腔室11内的基座12; 面对具有处理空间S的基座12的上电极板30a; 用于向基座12和上电极板30a之一施加高频电力以在处理空间S内产生等离子体的高频电源20; 以及面向处理空间S的内壁构件。空气阴极31a至31c形成在与用于调节护套电压的直流电源37连接的上电极板30a处。

公开(公告)号：US20120031560A1

公开(公告)日：2012-02-09

申请号：US13196193

申请日：2011-08-02

Applicant: Chishio Koshimizu

Inventor： Chishio Koshimizu

IPC: H01L21/3065 ,  C23C16/50

CPC classification number: H01J37/3211 ,  H01J37/32623

Abstract: A plasma processing apparatus includes: an evacuable chamber 11 for performing therein a plasma process on a substrate G; a susceptor 12 for mounting thereon the substrate G within the chamber 11; a dielectric window 30 provided to face the susceptor 12 via a processing space S; RF antennas 30a and 30b disposed in a space adjacent to the processing space S with the dielectric window 30; a gas supply unit 37 for supplying a processing gas into the processing space S; a high frequency power supply for applying a high frequency RFH to the RF antennas 30a and 30b, and generating plasma of the processing gas within the processing space S by an inductive coupling; and a protrusion 34 made of a dielectric material and provided on a bottom surface of the dielectric window 30 corresponding to an inter-position of the RF antennas 30a and 30b.

Abstract translation: 等离子体处理装置包括：用于在基板G上进行等离子体处理的可抽空室11; 用于将基板G安装在室11内的基座12; 设置为经由处理空间S与基座12相对的电介质窗30; 设置在与电介质窗30相邻的处理空间S的空间中的RF天线30a和30b; 用于将处理气体供给到处理空间S中的气体供给单元37; 用于将高频RFH施加到RF天线30a和30b的高频电源，以及通过电感耦合产生处理空间S内的处理气体的等离子体; 以及由电介质材料制成并且设置在电介质窗口30的与RF天线30a和30b的相互位置对应的底表面上的突起34。