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    Process for isotropically etching semiconductor devices
    111.
    发明授权
    Process for isotropically etching semiconductor devices 失效
    各向同性蚀刻半导体器件的方法

    公开(公告)号：US5358601A

    公开(公告)日：1994-10-25

    申请号：US121089

    申请日：1993-09-14

    Applicant: David A. Cathey

    Inventor： David A. Cathey

    IPC: H01L21/3213 ,  H01L21/00

    CPC classification number: H01L21/32137

    Abstract: The etchant material of this invention comprises a chemical etchant composition including a halogen-containing feed gas and gaseous carbon dioxide. Typically, the halogen-containing feed gas is a fluorine-containing or a chlorine-containing feed gas, or both a fluorine-containing and a chlorine-containing feed gas. Preferably, the chlorine-containing feed gas comprises chlorine gas or HCl, and the fluorine-containing feed gas comprises SF.sub.6 or NF.sub.3. The fluorine-containing feed gas can also comprise CF.sub.4, or C2F.sub.6.

    Abstract translation: 本发明的蚀刻剂材料包括含有含卤原料气体和气态二氧化碳的化学蚀刻剂组合物。 通常，含卤素的进料气体是含氟或含氯进料气体，或含氟和含氯进料气体。 优选地，含氯进料气体包括氯气或HCl，含氟进料气体包括SF 6或NF 3。 含氟进料气体还可以包含CF 4或C 2 F 6。

    Anisotropic etch method
    113.
    发明授权
    Anisotropic etch method 失效
    各向异性蚀刻法

    公开(公告)号：US5167762A

    公开(公告)日：1992-12-01

    申请号：US638295

    申请日：1991-01-02

    Applicant: Robert C. Carr ,  David A. Cathey

    Inventor： Robert C. Carr ,  David A. Cathey

    IPC: H01L21/311 ,  H01L21/3213

    CPC classification number: H01L21/32137 ,  H01L21/31116

    Abstract: A method to anisotropically etch an oxide/poly/oxide or an oxide/poly/oxide sandwich structure on a silicon wafer substrate in situ, that is, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step and a silicide/poly etch step. In the poly removal step, helium is added to improve etch uniformity. The pressure, power, and various gas quantities are balanced to produce the fastest etch rates while preserving selectivity. The fully etched sandwich structure has a vertical profile at or near 90.degree. from horizontal.

    Abstract translation: 一种在硅晶片衬底上原位各向异性蚀刻氧化物/聚氧化物或氧化物/多晶/氧化物夹层结构的方法，即使用单个平行板等离子体反应器室和单个惰性阴极，其间具有可变间隙 阴极和阳极。 该方法具有氧化物蚀刻步骤和硅化物/多晶刻蚀步骤。 在多元除去步骤中，加入氦以提高蚀刻均匀性。 平衡压力，功率和各种气体量以产生最快的蚀刻速率同时保持选择性。 完全蚀刻的三明治结构具有垂直分布，与水平方向成90度或接近90度。

    Process for creating a metal etch mask which may be utilized for halogen-plasma excavation of deep trenches
    114.
    发明授权
    Process for creating a metal etch mask which may be utilized for halogen-plasma excavation of deep trenches 失效
    用于制造可用于深沟槽的卤素等离子体挖掘的金属蚀刻掩模的方法

    公开(公告)号：US5001085A

    公开(公告)日：1991-03-19

    申请号：US554630

    申请日：1990-07-17

    Applicant: David A. Cathey ,  Trung T. Doan

    Inventor： David A. Cathey ,  Trung T. Doan

    IPC: H01L21/3065 ,  H01L21/308

    CPC classification number: H01L21/3081 ,  H01L21/3065 ,  Y10S148/105 ,  Y10S438/945

    Abstract: A process for creating a metal etch mask from either cobalt, nickel, palladium, iron or copper which may be utilized for halogen-plasma excavation of deep trenches. The process begins by creating a thin isolation layer of either silicon nitride or silicon dioxide on top of the layer to be trenched. A thin layer of one of the metals selected from the aforementioned list of five is then created on top of the isolation layer. A layer of polysilicon is then blanket deposited on top of the refractory metal layer. Photoresist masking is then performed as though the photoresist were the actual pattern for the trench etch. Exposed portions of the polysilicon layer are then etched away with an anisotropic etch. Following a photoresist strip, the substrate and overlying layers are subjected to an elevated temperature step, which causes the polysilicon to react with the underlying metal layer to form metal silicide. In substrate regions where no polysilicon overlies the metal layer, no silicide is formed. Next, the metal silicide is removed with a wet etch. A metal mask remains that is essentially an exact image of the original photoresist mask. Trenches may be etched to any desired depth with virtually no consumption of the metal mask. Once the trench etch is complete, the metal etch mask may be stripped utilizing a wet etch reagent such as aqua regia.

    Abstract translation: 用于从钴，镍，钯，铁或铜制造金属蚀刻掩模的方法，其可用于深沟槽的卤素等离子体挖掘。 该过程开始于在待沟槽的层的顶部上形成氮化硅或二氧化硅的薄隔离层。 然后在隔离层的顶部上形成从上述五个列表中选出的金属之一的薄层。 然后将多晶硅层覆盖在难熔金属层的顶部。 然后进行光刻胶掩模，就像光致抗蚀剂是沟槽蚀刻的实际图案一样。 然后用各向异性蚀刻蚀刻掉多晶硅层的暴露部分。 在光致抗蚀剂条之后，使衬底和覆盖层经受高温步骤，这使得多晶硅与下面的金属层反应形成金属硅化物。 在没有多晶硅覆盖金属层的衬底区域中，不形成硅化物。 接下来，用湿蚀刻去除金属硅化物。 残留的金属掩模基本上是原始光刻胶掩模的精确图像。 沟槽可以蚀刻到任何所需的深度，几乎不消耗金属掩模。 一旦沟槽蚀刻完成，就可以使用湿蚀刻剂如王水去除金属蚀刻掩模。

    Real-time analytics payment information screening
    116.
    发明授权
    Real-time analytics payment information screening 有权
    实时分析支付信息筛选

    公开(公告)号：US08675827B2

    公开(公告)日：2014-03-18

    申请号：US12888728

    申请日：2010-09-23

    Applicant: Juan Vasquez ,  Prashant Desai ,  David A. Cathey

    Inventor： Juan Vasquez ,  Prashant Desai ,  David A. Cathey

    IPC: H04M1/64

    CPC classification number: G06Q20/00 ,  G06Q20/305 ,  G06Q20/382 ,  G06Q20/405 ,  H04M3/42221 ,  H04M2201/40

    Abstract: A method including receiving a voice call; analyzing speech in real-time to determine whether payment information is included in the voice call; omitting to record the voice call when it is determined that the voice call includes the payment information; and recording the voice call when it is determined that the voice call does not include the payment information.

    Abstract translation: 一种包括接收语音呼叫的方法; 实时分析语音，确定支付信息是否包含在语音通话中; 当确定语音呼叫包括支付信息时，省略记录语音呼叫; 并且当确定语音呼叫不包括支付信息时，记录语音呼叫。

    Automated antenna trim for transmitting and receiving semiconductor devices
    117.
    发明授权
    Automated antenna trim for transmitting and receiving semiconductor devices 失效
    用于发射和接收半导体器件的自动天线装饰

    公开(公告)号：US08134467B2

    公开(公告)日：2012-03-13

    申请号：US11754841

    申请日：2007-05-29

    Applicant: David A. Cathey

    Inventor： David A. Cathey

    IPC: G08B13/14

    CPC classification number: H01Q1/2208 ,  G06K19/0723 ,  G06K19/0726 ,  G06K19/07749 ,  H01Q1/2225 ,  H01Q9/30

    Abstract: A radio frequency communication device and methods of testing and tuning an antenna attached thereto are described. A radio frequency communication device comprises internal circuitry and an antenna having a plurality of antenna segments associated therewith. Each antenna segment is associated with the antenna in either series or parallel relation through at least one of a fuse and an antifuse. In testing and tuning, a comparison is made to indicate whether the antenna is too short or too long.

    Abstract translation: 一种射频通信装置及其附着天线的测试和调谐方法。 射频通信设备包括内部电路和具有与其相关联的多个天线段的天线。 每个天线段通过熔丝和反熔丝中的至少一个与串联或并联的天线相关联。 在测试和调谐中，比较天线是否太短或太长。

    Methods and apparatuses for radio frequency identification (RFID) tags configured to allow antenna trim
    118.
    发明授权
    Methods and apparatuses for radio frequency identification (RFID) tags configured to allow antenna trim 有权
    用于射频识别（RFID）标签的方法和装置，其被配置为允许天线修整

    公开(公告)号：US07812728B2

    公开(公告)日：2010-10-12

    申请号：US11845308

    申请日：2007-08-27

    Applicant: David A. Cathey

    Inventor： David A. Cathey

    IPC: G08B13/14

    CPC classification number: H01Q1/2208 ,  G06K19/0723 ,  G06K19/0726 ,  G06K19/07749 ,  H01Q1/2225 ,  H01Q9/30

    Abstract: A radio frequency communication device and method are disclosed. In one aspect, an RFID tag includes an adjustable antenna having a main segment and one or more additional segments that are short relative to the main segment; and the antenna is adjustable to electrically isolate one or more of the additional segments from the main segment. In another aspect, an RFID tag includes an antenna having a first section and a second section short relative to the first section; and the antenna is adjustable to disconnect the first and second sections from each other at a predetermined location. In a further aspect, an RFID tag includes an antenna having a first section and a second section; and the first section is adjustable to decrease the first length of the first section and the second section adjustable to increase the second length of the second section.

    Abstract translation: 公开了射频通信装置和方法。 在一个方面，RFID标签包括可调节天线，其具有主段和相对于主段短的一个或多个附加段; 并且天线是可调节的，以将一个或多个附加段与主段电隔离。 另一方面，RFID标签包括具有相对于第一部分缩短的第一部分和第二部分的天线; 并且天线是可调节的，以在预定位置彼此断开第一和第二部分。 另一方面，RFID标签包括具有第一部分和第二部分的天线; 并且第一部分可调节以减小第一部分的第一长度，并且第二部分可调节以增加第二部分的第二长度。

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