摘要:
A device for adjusting the illumination dose on a photosensitive layer in a microlithographic projection exposure apparatus has a plurality of stop elements which are, in a direction perpendicularly to a scanning direction of the apparatus, arranged next to one another. Each stop element has an outer surface that absorbs substantially all projection light impinging thereon, and a substantially rectangular circumference. Each stop element furthermore has at least one recess in its circumference or at least one opening through which projection light is allowed to pass. A drive unit individually displaces the stop elements along the scanning direction into a light field.
摘要:
The invention relates to a projection objective (6), in particular for applications in microlithography, serving to project an image of an object (3) arranged in an object plane (4) onto a substrate (18) arranged in an image plane (7). The projection objective (6) has an object-side-oriented part (10) which is arranged adjacent to the object plane (4) and includes a plurality of optical elements, and it also has an image-side-oriented part (11) of the objective which is arranged adjacent to the image plane (7) and includes a free space (16) serving to receive a fluid (13) and further includes at least a part of an optical end-position element (14) serving to delimit the free space (16) towards the object side. The projection objective (6) is operable in different modes of operation in which the free space (16) is filled with fluids (13) that differ in their respective indices of refraction.
摘要:
The invention relates to a projection exposure system, in particular for micro-lithography. The projection exposure system according to the invention comprises a light source (18) for producing light in the EUV region. The projection exposure system further comprises a first optical system (19, 20, 21, 22, 23, 24) for illuminating a mask (25) by the light of the light source (18) and a second optical system (26, 27, 28, 29, 30, 31) for imaging the mask (25) on a component (32). At least one polarization-optical element (1) is disposed on the beam path between the light source (18) and the component (32).
摘要:
An optical system, particularly an illumination system, of a microlithographic projection exposure apparatus contains at least one plane reflecting surface for folding the beam path. The at least one reflecting surface is arranged with respect to an optical axis of the optical system such that the intensity ratio between two mutually perpendicular polarization directions is at least substantially preserved for an axially parallel light ray deviated by the at least one reflecting surface. In accordance with a second aspect, the at least one reflecting surface is arranged such that a maximum effect on the polarization of the projection light is achieved, so as to be able to compensate for polarization dependencies which occur in other components of the illumination system.
摘要:
An objective for a microlithography projection system has at least one fluoride crystal lens. The effects of birefringence, which are detrimental to the image quality, are reduced if the lens axis of the crystal lens is oriented substantially perpendicular to the {100}-planes or {100}-equivalent crystallographic planes of the fluoride crystal. If two or more fluoride crystal lenses are used, they should have lens axes oriented in the (100)-, (111)-, or (110)-direction of the crystallographic structure, and they should be oriented at rotated positions relative to each other. The birefringence-related effects are further reduced by using groups of mutually rotated (100)-lenses in combination with groups of mutually rotated (111)- or (110)-lenses. A further improvement is also achieved by applying a compensation coating to at least one optical element of the objective.
摘要:
An optical system for ultraviolet light having wavelengths λ≦200 nm, which may be designed in particular as a catadioptric projection objective for microlithography, has a plurality of optical elements including optical elements made of synthetic quartz glass or a fluoride crystal material transparent to a wavelength λ≦200 nm. At least two of the optical elements are utilized for forming at least one liquid lens group including a first delimiting optical element, a second delimiting optical element, and a liquid lens, which is arranged in an interspace between the first delimiting optical element and the second delimiting optical element and contains a liquid transparent to ultraviolet light having wavelengths λ≦200 nm. This enables effective correction of chromatic aberrations even in the case of systems that are difficult to correct chromatically.
摘要:
A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.
摘要:
A method for correcting at least one image defect of a projection objective of a lithography projection exposure machine, the projection objective comprising an optical arrangement composed of a plurality of lenses and at least one mirror, the at least one mirror having an optically operative surface that can be defective and is thus responsible for the at least one image defect, comprises the steps of: at least approximately determining a ratio VM of principal ray height hMH to marginal ray height hMR at the optically operative surface of the at least one mirror, at least approximately determining at least one optically operative lens surface among the lens surfaces of the lenses, at which the magnitude of a ratio VL of principal ray height hLH to marginal ray height hLR comes at least closest to the ratio VM, and selecting the at least one determined lens surface for the correction of the image defect.
摘要翻译:一种用于校正光刻投影曝光机的投影物镜的至少一个图像缺陷的方法,所述投影物镜包括由多个透镜和至少一个反射镜构成的光学装置,所述至少一个反射镜具有光学操作表面, 可能是有缺陷的,并且因此对至少一个图像缺陷负责,包括以下步骤:至少近似地确定主光线高度h M H的比率VM与边缘光线高度h M 在至少一个反射镜的光学操作表面处至少近似地确定透镜的透镜表面中的至少一个光学透镜表面,其中主光线高度h的比值VL的大小, 对于边缘射线高度h L L至少最接近比率VM,并且选择至少一个确定的透镜表面用于校正图像缺陷。
摘要:
A lithographic method of manufacturing a miniaturized device using a projection exposure system comprises illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.
摘要:
An optical system, for example a lens for a photolithography tool, includes a group of optical elements (L1, L2) that each comprise a birefringent cubic crystal such as CaF2. The crystal lattices of the crystals have different orientations, e.g. for reducing the overall retardance of the group by mutual compensation. The [110] crystal axis of at least one optical element (L1, L2) is tilted with respect to an optical axis (34) of the system (10) by a predefined tilting angle (θ1, θ2) having an absolute value between 1° and 20°. This reduces the magnitude, but not significantly changes the orientation of intrinsic birefringence. By selecting an appropriate tilting angle it is possible to achieve a better performance of the optical system. For example, the overall retardance of the optical system may be reduced, or the angular retardance distribution may be symmetrized.