Anti-Reflection Layer For Back-Illuminated Sensor
    111.
    发明申请
    Anti-Reflection Layer For Back-Illuminated Sensor 有权
    背照射传感器防反射层

    公开(公告)号:US20150200216A1

    公开(公告)日:2015-07-16

    申请号:US14591325

    申请日:2015-01-07

    CPC classification number: H01L27/1462 H01L27/1464 H01L27/14685 H01L27/14687

    Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

    Abstract translation: 用于短波长光的图像传感器包括半导体膜,形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。 在纯硼层的顶部形成防反射层或保护层。 该图像传感器具有高效率和良好的稳定性,即使在高通量下连续使用多年。 图像传感器可以使用CCD(电荷耦合器件)或CMOS(互补金属氧化物半导体)技术来制造。 图像传感器可以是二维区域传感器或一维阵列传感器。

    Photocathode Including Silicon Substrate With Boron Layer
    114.
    发明申请
    Photocathode Including Silicon Substrate With Boron Layer 有权
    含有硅衬底的光电阴极

    公开(公告)号:US20140034816A1

    公开(公告)日:2014-02-06

    申请号:US13947975

    申请日:2013-07-22

    Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects, and a low work-function material layer is then formed over the boron layer to enhance the emission of photoelectrons. The low work-function material includes an alkali metal (e.g., cesium) or an alkali metal oxide. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel sensors and inspection systems.

    Abstract translation: 在具有相对的照明​​(顶部)和输出(底部)表面的单晶硅衬底上形成光电阴极。 为了防止硅的氧化,使用最小化氧化和缺陷的工艺将薄(例如,1-5nm)的硼层直接设置在输出表面上,然后在硼层上形成低功函数材料层 以增强光电子的发射。 低功函材料包括碱金属(例如铯)或碱金属氧化物。 在照明(顶部)表面上形成可选的第二硼层,并且在硼层上形成可选的抗反射材料层,以增强光子进入硅衬底的能力。 在相对的照明​​(顶部)和输出(底部)表面之间产生可选的外部电位。 光电阴极形成新型传感器和检测系统的一部分。

    Method and System for Determining One or More Optical Characteristics of Structure of a Semiconductor Wafer
    115.
    发明申请
    Method and System for Determining One or More Optical Characteristics of Structure of a Semiconductor Wafer 有权
    确定半导体晶片结构的一个或多个光学特性的方法和系统

    公开(公告)号:US20130215420A1

    公开(公告)日:2013-08-22

    申请号:US13734506

    申请日:2013-01-04

    Abstract: Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field.

    Abstract translation: 半导体晶片的结构的一个或多个光学特性的确定包括测量来自样品的一个或多个结构的一个或多个光学信号,基于所述样品的一个或多个结构确定与具有所选择的一组标称特征的参考结构相关联的背景光学场 一个或多个结构,确定适合于至少部分校正背景场的校正光场,其中所测量的一个或多个光信号与与校正光场和背景光场之和相关联的信号之间的差异在以下 选择的公差等级,以及利用所述校正光场提取与所述一个或多个结构相关联的一个或多个特征。

    Electron-Bombarded Charge-Coupled Device And Inspection Systems Using EBCCD Detectors
    116.
    发明申请
    Electron-Bombarded Charge-Coupled Device And Inspection Systems Using EBCCD Detectors 审中-公开
    使用EBCCD检测器的电子轰击电荷耦合器件和检测系统

    公开(公告)号:US20130148112A1

    公开(公告)日:2013-06-13

    申请号:US13710315

    申请日:2012-12-10

    Abstract: A focusing EBCCD includes a control device positioned between a photocathode and a CCD. The control device has a plurality of holes therein, wherein the plurality of holes are formed perpendicular to a surface of the photocathode, and wherein a pattern of the plurality of holes is aligned with a pattern of pixels in the CCD. Each hole is surrounded by at least one first electrode, which is formed on a surface of the control device facing the photocathode. The control device may include a plurality of ridges between the holes. The control device may be separated from the photocathode by approximately half a shorter dimension of a CCD pixel or less. A plurality of first electrodes may be provided, wherein each first electrode surrounds a given hole and is separated from the given hole by a gap.

    Abstract translation: 聚焦EBCCD包括位于光电阴极和CCD之间的控制装置。 控制装置具有多个孔,其中多个孔垂直于光电阴极的表面形成,并且其中多个孔的图案与CCD中的像素图案对准。 每个孔被形成在面向光电阴极的控制装置的表面上的至少一个第一电极包围。 控制装置可以包括孔之间的多个脊。 控制装置可以与光电阴极分离CCD像素的大约一半的较短尺寸或更小。 可以提供多个第一电极,其中每个第一电极围绕给定的孔并且通过间隙与给定的孔分离。

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