公开(公告)号：US09290869B2

公开(公告)日：2016-03-22

申请号：US14185492

申请日：2014-02-20

申请人： Daisuke Ueda ,  Hiroshi Yamasaki ,  Toshiyuki Mamiya ,  Mitsuhiro Iida ,  Kazusa Kondo

发明人： Daisuke Ueda ,  Hiroshi Yamasaki ,  Toshiyuki Mamiya ,  Mitsuhiro Iida ,  Kazusa Kondo

IPC分类号： D05B3/02 ,  D05B55/14

CPC分类号： D05B3/02 ,  D05B55/14

摘要： A sewing machine includes a needle bar, a needle bar up-and-down movement mechanism, a swinging mechanism, a lower shaft, an outer shuttle, a thread cutting mechanism, a rotation speed adjustment mechanism, and an actuator. The needle bar up-and-down movement mechanism is configured to move the needle bar up and down. The swinging mechanism is configured to swing the needle bar in a left-right direction. The lower shaft is configured to rotate in synchronization with up-down movement of the needle bar. The outer shuttle is configured to rotate along with rotation of the lower shaft. The thread cutting mechanism is configured to cut at least an upper thread. The rotation speed adjustment mechanism is configured to adjust a rotation speed of the outer shuttle. The actuator is a driving source of the thread cutting mechanism and the rotation speed adjustment mechanism.

摘要翻译： 缝纫机包括针杆，针杆上下运动机构，摆动机构，下轴，外梭，切线机构，转速调节机构和致动器。 针杆上下移动机构配置为上下移动针杆。 摆动机构构造成使针杆向左右方向摆动。 下轴构造成与针杆的上下移动同步地旋转。 外梭被构造成随着下轴的旋转而旋转。 螺纹切割机构构造成至少切割面线。 旋转速度调节机构构成为调整外梭的转速。 致动器是切线机构和转速调节机构的驱动源。

公开(公告)号：US08652303B2

公开(公告)日：2014-02-18

申请号：US13372098

申请日：2012-02-13

申请人： Norihisa Mino ,  Daisuke Ueda

发明人： Norihisa Mino ,  Daisuke Ueda

IPC分类号： B01D3/00 ,  C02F1/14

CPC分类号： C02F1/043 ,  C02F1/14 ,  C02F2103/08 ,  Y02A20/128 ,  Y02A20/129 ,  Y02A20/142

摘要： A desalination device includes a vessel, a breathable sheet, a water-repellent particle layer and a tank layer. The tank layer is positioned at the lower portion inside the vessel and the breathable sheet is interposed between the water-repellent particle layer and the tank layer. The breathable sheet includes a through-hole, the water-repellent particle layer is composed of a plurality of water-repellent particles, and the surface of the respective water-repellent particles includes a water-repellent film. The saltwater is desalted by a step of pouring saltwater into the vessel to dispose the saltwater on the surface of the water-repellent particle layer, a step of heating the saltwater to evaporate the saltwater into vapor; and a step of liquefying the vapor to obtain fresh water in the tank layer.

摘要翻译： 脱盐装置包括容器，透气片，拒水粒子层和罐层。 罐层位于容器内部的下部，透气片介于防水颗粒层和罐层之间。 透气片包括通孔，防水性颗粒层由多个防水颗粒组成，各防水颗粒的表面包括防水膜。 盐水通过将盐水倒入容器中以将盐水处理在防水颗粒层的表面上的步骤脱盐，加热盐水以将盐水蒸发成蒸气的步骤; 以及液化液体以在罐层中获得淡水的步骤。

公开(公告)号：US08427090B2

公开(公告)日：2013-04-23

申请号：US13247197

申请日：2011-09-28

申请人： Nobuyuki Otsuka ,  Yuji Kudoh ,  Daisuke Ueda ,  Hitoshi Taya

发明人： Nobuyuki Otsuka ,  Yuji Kudoh ,  Daisuke Ueda ,  Hitoshi Taya

IPC分类号： H02K29/06

CPC分类号： H02K7/00 ,  H02K29/03 ,  H02K29/06 ,  H02K99/20 ,  H02P27/08

摘要： To develop a motor which can directly drive a brushless motor using a conventional circuit for an inverter without smoothing circuit and a circuit for a matrix converter that are for a brushed motor that operates on single-phase 100 V. Magnetic cores are attached to a motor shaft to increase inertial force. A magnetic-drive-pulsation motor which modulates torque is realized using force of attraction and repulsion generated by outer magnets and magnetic cores. The magnetic-drive-pulsation motor can be driven using the inverter and the matrix converter on single-phase 100 V power supply.

摘要翻译： 开发可以直接驱动无刷电动机的电动机，其使用用于无平滑电路的逆变器的常规电路和用于矩阵转换器的电路，其用于在单相100V上操作的有刷电动机。磁芯附接到电动机 轴增加惯性力。 使用由外磁体和磁芯产生的吸引力和排斥力来实现调节扭矩的磁驱动脉动电动机。 可以使用变频器和矩阵转换器在单相100 V电源上驱动磁驱动脉动电机。

公开(公告)号：US08384212B2

公开(公告)日：2013-02-26

申请号：US13173647

申请日：2011-06-30

申请人： Nobuyuki Otsuka ,  Manabu Yanagihara ,  Shuichi Nagai ,  Daisuke Ueda

发明人： Nobuyuki Otsuka ,  Manabu Yanagihara ,  Shuichi Nagai ,  Daisuke Ueda

IPC分类号： H01L23/10

CPC分类号： H01L23/427 ,  H01L21/50 ,  H01L21/54 ,  H01L23/045 ,  H01L23/10 ,  H01L2224/45124 ,  H01L2224/48 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： To provide a semiconductor equipment having high heat-transfer effect and breakdown voltage, and a method of manufacturing the same. The semiconductor equipment includes: a sealed container; a stem connected to the sealed container via a stem peripheral portion; and a semiconductor chip mounted on a top surface of the stem, inside the sealed container. The semiconductor chip is electrically connected to a lead provided to the stem, the stem peripheral portion, which is of a material that is different from the material of stem and the same as the material of the sealed container, is bonded along a periphery of the stem, and the sealed container is filled with a working fluid including at least one of ethanol, a perfluorocarbon, and a fluoroether.

摘要翻译： 提供具有高传热效应和击穿电压的半导体设备及其制造方法。 半导体设备包括：密封容器; 通过杆周边部连接到密封容器的杆; 以及安装在所述杆的顶表面上的所述密封容器内的半导体芯片。 半导体芯片电连接到设置在杆上的引线，与外壳材料不同的材料的茎周边部分沿密封容器的材料粘结， 并且密封容器中填充有包括乙醇，全氟化碳和氟醚中的至少一种的工作流体。

公开(公告)号：US20120153355A1

公开(公告)日：2012-06-21

申请号：US13402631

申请日：2012-02-22

申请人： Hidekazu UMEDA ,  Yoshiharu Anda ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hidekazu UMEDA ,  Yoshiharu Anda ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/78

CPC分类号： H01L29/2003 ,  H01L29/1066 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/861

摘要： A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.

摘要翻译： 氮化物半导体器件包括半导体衬底和形成在半导体衬底上的氮化物半导体层。 半导体衬底包括正常区域和围绕法线区域的界面电流阻挡区域。 氮化物半导体层包括元件区域和围绕元件区域的隔离区域。 元件区域形成在正常区域上。 界面电流阻挡区域含有杂质，并且在氮化物半导体层和半导体衬底之间的界面处产生的载流子形成势垒。

公开(公告)号：US20120126290A1

公开(公告)日：2012-05-24

申请号：US13360275

申请日：2012-01-27

申请人： Yasuhiro UEMOTO ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Yasuhiro UEMOTO ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/778

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7783

摘要： A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.

摘要翻译： 氮化物半导体器件包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。 位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域，以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域 形成有具有比控制区域更高的电阻的高电阻区域。

公开(公告)号：US08116194B2

公开(公告)日：2012-02-14

申请号：US12530474

申请日：2009-01-08

申请人： Takashi Iwamura ,  Mitsuaki Oyamada ,  Daisuke Ueda

发明人： Takashi Iwamura ,  Mitsuaki Oyamada ,  Daisuke Ueda

IPC分类号： G11B7/00

CPC分类号： G11B7/244 ,  B82Y10/00 ,  B82Y20/00 ,  G11B7/00452 ,  G11B7/241 ,  G11B7/246 ,  G11B7/251 ,  G11B7/2531

摘要： The invention is able to enhance a recording speed. In the invention, a recording mark (RM) composed of a cavity is formed by vaporizing a two-photon absorbing material by a two-photon absorption reaction as an embodiment of a photoreaction against a recording light beam (L1) as recording light to be condensed at the time of recording information. Also, in a recording layer (101), the information is reproduced on the basis of a return light beam (L3) formed by modulation of a readout light beam (L2) irradiated as prescribed readout light at the time of reproducing inform in conformity with the presence of absence of the recording mark (RM). Then, in the recording layer (101), in view of the fact that the a two-photon absorbing particle having a two-photon absorbing material coordinated with a metal fine particle (MN) is dispersed in a binder resin configuring the recording layer (101), the two-photon absorbing material having a two-photon absorbing characteristic is disposed as a vaporizable material in the vicinity of the metal fine particle (MN) dispersed in the binder resin.

摘要翻译： 本发明能够提高记录速度。 在本发明中，作为对作为记录光的记录光（L1）的光反应的一个实施方案，通过双光子吸收反应汽化双光子吸收材料来形成由空腔构成的记录标记（RM），作为记录光 在记录信息时凝聚。 此外，在记录层（101）中，基于在再现信息时按照规定的读出光照射的读出光束（L2）形成的返回光束（L3），根据 不存在记录标记（RM）。 然后，在记录层（101）中，考虑到具有与金属微粒（MN）配合的双光子吸收材料的双光子吸收粒子分散在构成记录层的粘合剂树脂（ 101），具有双光子吸收特性的双光子吸收材料作为分散在粘合剂树脂中的金属微粒（MN）附近的可汽化材料设置。

公开(公告)号：US07913993B2

公开(公告)日：2011-03-29

申请号：US12632946

申请日：2009-12-08

申请人： Akira Kosugi ,  Daisuke Ueda

发明人： Akira Kosugi ,  Daisuke Ueda

IPC分类号： B65H3/14

CPC分类号： B65H3/128 ,  B65H3/48 ,  B65H2511/20 ,  B65H2511/417 ,  B65H2511/51 ,  B65H2515/342 ,  B65H2801/06 ,  B65H2220/01 ,  B65H2220/03 ,  B65H2220/02

摘要： A sheet feeding device may include a sucking and conveying mechanism having a suction surface, which sucks sheets stacked on a sheet stacking table, from an upper surface of the sheets, sucks an uppermost sheet to be sucked on the suction surface, and conveys the uppermost sheet onto a sheet conveyance path; a floating air blowing mechanism which blows floating air against the sheets from a side surface of the stacked sheets; a sheet position detecting sensor which detects an upper surface height position of the sheets stacked, and detects a floating state of the sheets floated; and a controller which judges the floating state of the sheets detected in a floating state detecting period in connection with a blowing of the floating air, and controls an air volume of floating air blown from the floating air blowing mechanism based on the floating state of the sheets.

摘要翻译： 片材进给装置可以包括一个吸引传送机构，该抽吸传送机构具有从片材的上表面吸收堆叠在片材堆叠台上的片材的吸附表面，吸引要吸附在吸附表面上的最上面的片材，并且将最上面的片材 片材输送到片材输送路径上; 浮动空气吹送机构，其从堆叠的纸张的侧表面将浮动空气吹向纸张; 片材位置检测传感器，其检测层叠的片材的上表面高度位置，并检测片材的浮动状态; 以及控制器，其判断浮动状态检测期间检测到的纸张的浮动状态与浮动空气的吹送相关联，并且基于浮动状态的浮动状态来控制从浮动空气吹送机构吹出的浮动空气的空气量 床单。

公开(公告)号：US07859087B2

公开(公告)日：2010-12-28

申请号：US12637240

申请日：2009-12-14

申请人： Tomohiro Murata ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tomohiro Murata ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L23/58

CPC分类号： H01L29/7787 ,  H01L23/367 ,  H01L23/3677 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.

公开(公告)号：US20100090250A1

公开(公告)日：2010-04-15

申请号：US12637240

申请日：2009-12-14

申请人： Tomohiro MURATA ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tomohiro MURATA ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/205 ,  H01L29/772 ,  H01L29/06

CPC分类号： H01L29/7787 ,  H01L23/367 ,  H01L23/3677 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.

摘要翻译： 半导体器件包括：半导体层; 形成在与半导体层接触的半导体层上的至少一个电极; 以及覆盖半导体层和电极的顶表面的至少一部分的钝化膜，以保护半导体层并由多个子膜形成。 钝化膜包括由氮化铝制成的第一子膜。