公开(公告)号：US20070210324A1

公开(公告)日：2007-09-13

申请号：US11713760

申请日：2007-03-05

申请人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa

发明人： Yoshinobu Kawaguchi ,  Takeshi Kamikawa

IPC分类号： H01L33/00

CPC分类号： H01S5/0287 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/0021 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/221 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/00

摘要： A nitride semiconductor light emitting device includes a first coat film of aluminum nitride or aluminum oxynitride formed at a light emitting portion and a second coat film of aluminum oxide formed on the first coat film. The thickness of the second coat film is at least 80nm and at most 1000nm. Here, the thickness of the first coat film is preferably at least 6nm and at most 200nm.

摘要翻译： 氮化物半导体发光器件包括在第一涂膜上形成的在发光部分形成的氮化铝或氮氧化铝的第一涂膜和氧化铝的第二涂膜。 第二涂膜的厚度为80nm以上且1000nm以下。 这里，第一涂膜的厚度优选为6nm以上200nm以下。

公开(公告)号：US20070177646A1

公开(公告)日：2007-08-02

申请号：US11651074

申请日：2007-01-09

申请人： Ryuichi Sogabe ,  Yoshinobu Kawaguchi ,  Takeshi Kamikawa

发明人： Ryuichi Sogabe ,  Yoshinobu Kawaguchi ,  Takeshi Kamikawa

IPC分类号： H01S5/00

CPC分类号： H01S5/028 ,  B82Y20/00 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/162 ,  H01S5/34326

摘要： A semiconductor laser diode comprising a semiconductor substrate having an active layer with a pair of cavity facets opposed to each other on both ends of active layer as well as a first dielectric film of an oxide and a second dielectric film of an oxynitride successively stacked on one cavity facet has sufficient initial characteristics with a film structure having excellent heat radiability for allowing stable high-output lasing over a long period without reducing a catastrophic optical damage level on an emission end.

摘要翻译： 一种半导体激光二极管，包括具有活性层的半导体衬底，所述有源层具有在有源层的两端彼此相对的一对腔面，以及氧化物的第一电介质膜和连续层叠在一个上的氧氮化物的第二电介质膜 空腔面具有足够的初始特性，其膜结构具有优异的热辐射性，用于在长时间内允许稳定的高输出激光，而不会降低发射端的灾难性光学损伤水平。

公开(公告)号：US20070138492A1

公开(公告)日：2007-06-21

申请号：US11638582

申请日：2006-12-14

申请人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/44 ,  H01S5/028 ,  H01S5/2036 ,  H01S5/22

摘要： There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride.

摘要翻译： 提供一种具有涂覆有涂膜的发光部分的氮化物半导体发光器件，该发光部分由氮化物半导体形成，与发光部分接触的涂膜由氮氧化物形成。 还提供了一种制造氮化物半导体激光器件的方法，该器件具有具有涂覆有涂膜的小面的空腔，包括以下步骤：提供切割以形成腔的小平面; 并用由氮氧化物形成的涂膜涂覆空腔的小平面。

公开(公告)号：US20070054431A1

公开(公告)日：2007-03-08

申请号：US11500334

申请日：2006-08-08

申请人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

发明人： Takeshi Kamikawa ,  Yoshinobu Kawaguchi

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/2231

摘要： A substrate with a nitride semiconductor layer is cleaved to form resonator end faces, on which a coating film is formed so as to make a nitride semiconductor laser bar. This is divided into nitride semiconductor laser elements. Prior to forming the coating film on the resonator end face, the resonator end face is exposed to a plasma atmosphere generated from the gas containing nitrogen gas. When a ratio of nitrogen to gallium in the surface of the resonator end face before the exposure is represented by “a”, an average value of ratios of nitrogen to gallium inside from the surface of the resonator end face before the exposure is represented by “b”, a ratio of nitrogen to gallium in the surface of the resonator end face after the exposure to the first plasma atmosphere is represented by “d”, and an average value of ratios of nitrogen to gallium inside from the surface of the resonator end face after the exposure is represented by “e”, the value “g” that is expressed by g=(b·d)/(a·e) is set to a value that satisfies g≧0.8.

摘要翻译： 具有氮化物半导体层的衬底被切割以形成谐振器端面，在其上形成涂膜以便形成氮化物半导体激光棒。 这被分为氮化物半导体激光元件。 在共振器端面上形成涂膜之前，共振器端面暴露于由含有氮气的气体产生的等离子体气氛中。 当曝光前共振器端面表面的氮与镓的比例由“a”表示时，曝光前共振器端面的表面内的氮与镓的平均值由“ b“，在暴露于第一等离子体气氛之后，共振器端面的表面中的氮与镓的比率由”d“表示，并且从谐振器端的表面的内部的氮与镓的平均值 曝光后的面由“e”表示，由g =（bd）/（ae）表示的值“g”被设定为满足g> = 0.8的值。

公开(公告)号：US20070051968A1

公开(公告)日：2007-03-08

申请号：US10556907

申请日：2004-04-18

申请人： Shuichiro Yamamoto ,  Atsushi Ogawa ,  Masaya Ishida ,  Takeshi Kamikawa

发明人： Shuichiro Yamamoto ,  Atsushi Ogawa ,  Masaya Ishida ,  Takeshi Kamikawa

IPC分类号： H01L33/00

CPC分类号： H01S5/02272 ,  H01L24/45 ,  H01L33/62 ,  H01L2224/05114 ,  H01L2224/05117 ,  H01L2224/05124 ,  H01L2224/05138 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05178 ,  H01L2224/05179 ,  H01L2224/0518 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05605 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05617 ,  H01L2224/05618 ,  H01L2224/0562 ,  H01L2224/05624 ,  H01L2224/05638 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/45 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/12041 ,  H01S5/02212 ,  H01S5/02476 ,  H01S5/2231 ,  H01S5/32341 ,  H01L2224/48091 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/01021 ,  H01L2924/01057 ,  H01L2924/01039 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/0106 ,  H01L2924/01062 ,  H01L2924/01063 ,  H01L2924/01065 ,  H01L2924/01052 ,  H01L2224/43 ,  H01L2924/01006

摘要： A nitride-based semiconductor light-emitting device having excellent reliability and long lifetime, and a method of manufacturing the same are provided. A nitride-based semiconductor light-emitting element chip, in which a nitride-based semiconductor layer and a first electrode are formed on a surface of an electrically conductive substrate and a second electrode is formed on a rear surface of the electrically conductive substrate, is mounted on a submount, and the submount having the nitride-based semiconductor light-emitting element chip mounted thereon is further mounted on a stem to form a nitride-based semiconductor light-emitting device.

摘要翻译： 提供了具有优异的可靠性和长寿命的氮化物基半导体发光器件及其制造方法。 在导电性基板的背面形成氮化物系半导体发光元件芯片，其中氮化物系半导体层和第一电极形成在导电性基板的表面上，第二电极形成在导电性基板的背面上 安装在基座上，并且其上安装有氮化物基半导体发光元件芯片的基座进一步安装在杆上以形成氮化物基半导体发光器件。

公开(公告)号：US06521998B1

公开(公告)日：2003-02-18

申请号：US09472008

申请日：1999-12-27

申请人： Nobuaki Teraguchi ,  Takeshi Kamikawa

发明人： Nobuaki Teraguchi ,  Takeshi Kamikawa

IPC分类号： H01L2348

CPC分类号： H01L29/7787 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/475 ,  H01L33/32 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an electrode structure for a nitride III-V compound semiconductor device, a metallic nitride is used as an electrode material. A metallic material of the metallic nitride has a negative nitride formation free energy, and comprises at least one metal selected from a group consisting of IVa-group metals such as titanium and zirconium, Va-group metals such as vanadium, niobium, and tantalum, and VIa-group metals such as chromium, molybdenum, and tungsten.

摘要翻译： 在氮化物III-V化合物半导体器件的电极结构中，使用金属氮化物作为电极材料。 金属氮化物的金属材料具有负氮化物形成自由能，并且包括选自由IVa族金属如钛和锆组成的组中的至少一种金属，Va族金属如钒，铌和钽， 和VIa族金属如铬，钼和钨。