摘要:
The present invention provides a light-emitting device which can be driven at a low voltage and has high luminance, high efficiency, and has a long lifetime even as an organic EL device using phosphorescence. The light-emitting device of the present invention is a light-emitting device including an anode, a cathode, and an organic light-emitting layer sandwiched between the anode and the cathode, in which the organic light-emitting layer is composed of a host material and one or more kinds of dopants, a difference in electron affinity between the host material and at least one kind of the dopants is 0.3 eV or less, and a difference in ionization potential between the host material and the at least one kind of the dopants is 0.8 eV or less.
摘要:
A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).
摘要:
A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).
摘要:
A control circuit generates a right-turn or left-turn signal from a direction indicator lamp based on a direction indicating signal from a turn signal switch in a scooter as a vehicle. The control circuit then calculates a turning angle of the scooter from an angular speed V of the scooter detected by an angular speed sensor, and cancels the turn signal generated from the direction indicator lamp on the condition that the turning angle be equal to or greater than a reference turning angle, that a vehicle speed N detected by a vehicle speed sensor be equal to or higher than a reference vehicle speed, and that the angular speed detected by the angular speed sensor be equal to or lower than a reference angular speed. Accordingly, even when the scooter is waiting to make a right or left turn at an intersection with a turning angle equal to or greater than the reference turning angle and an angular speed V equal to or lower than the reference angular speed, the vehicle speed N does not become equal to or higher than the reference vehicle speed (the vehicle speed is actually zero). Therefore, the turn signal is prevented from being canceled unnecessarily.
摘要:
A gated field effect transistor (gated-FET) in which the body of the FET is electrically isolated from the substrate thereby reducing leakage current through parasitic bipolar action. The back-bias of the channel of the FET is jointly controlled by a diode coupled with a capacitor.
摘要:
A circuit for measuring the access time of a memory circuit. The circuit includes a storage element 908 having an input terminal, an output terminal, and a clock terminal. The input terminal of the storage element is coupled to an output of the memory circuit 900. A clock signal source 906 is coupled to the clock terminal of the storage element and to a clock terminal of the memory circuit. The circuit also includes test circuitry 902 coupled to address and control terminals of the memory circuit and to the output terminal of the storage element. The test circuitry is operable to store or generate a test data pattern and compare the pattern to data output from the storage element. In one embodiment, the storage element is a data latch comprising a clock-enabled inverter serially coupled with a flip-flop. The flip-flop in one embodiment is a cross-coupled inverter storage cell or “keeper”. For a clock signal having a pulse length or duty cycle that is longer than the access time of the memory circuit, the output of the storage element matches the data pattern stored by the test circuitry. As the clock frequency is increased, or the duty cycle decreased, so that the pulse length approximates the access time, the data output from the storage element no longer matches the data expected by the test circuitry, thus allowing a determination of the access time.
摘要:
A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronious read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).
摘要:
The objective of the invention is to conduct access of image data in the diagonal direction at high-speed by using the page mode.The memory region is divided into four memory arrays (15.sub.-1 to 15.sub.-4), and shifters (13.sub.-1 to 13.sub.-4) [sic: (14.sub.-1 to 14.sub.-4)] are provided that can shift the page address by one address in relation to each memory array. The image data are divided into sub-blocks of 4.times.4, 4 data items for the vertical correction are stored in the same memory array, and the page addresses for the sub-blocks connected in the horizontal direction are stored so as to be consecutive. In the case of accessing the data in the diagonal direction, when the data straddle adjacent blocks 4 at a time from the top, the page address is shifted by a shifter for the memory array containing that straddled column. In this way even in accessing the diagonal direction, 4 units of data are always obtained for a 1-page access, and data scanning of the diagonal direction by the page mode becomes possible.
摘要:
In the design of an integrated circuit for comparing serial data signals, the number of transistor elements can be reduced by implementing the comparison gate (12) based on the associated truth table rather than by using a general comparison gate component. Using this method, an exclusive OR gate (22) can be implemented using two transistor elements (221, 222), an exclusive NOR gate (52) can be implemented using two transistor elements (521, 522), an AND gate (62) can be implemented using a single transistor element (621), and an OR gate (72) can be implemented using a single transistor element (721). The reduced number of elements used to implement the comparison gates can provide a transistor element saving in the associated circuit.
摘要:
Method and device for enabling high-speed write/read operation of image information in units of blocks, so as to fully meet the demand on high-speed operation of MPEG, etc. Eight memory arrays MA1-MA8 are parallelly-connected in image memory unit 10; hence, in each memory array MAi, image can be written/read individually under control of write address generating circuit 12, memory array control logic 14, and read address generating circuit 16. The input/output terminals of memory arrays MA1-MA8 are connected to half-pel operation circuit 24 through eight data registers DREG1-DREG8 of input/output buffer 18, eight row selectors YSEL1-YSEL8 and column selector XSEL of selector circuit 20, and data bus 22.