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139 条记录 (耗时 0.038 秒)

    Designing and operating of semiconductor integrated circuit by taking into account process variation
    111.
    发明申请
    Designing and operating of semiconductor integrated circuit by taking into account process variation 失效
    考虑到工艺变化，设计和运行半导体集成电路

    公开(公告)号：US20070226660A1

    公开(公告)日：2007-09-27

    申请号：US11525895

    申请日：2006-09-25

    申请人： Toshio Ogawa

    发明人： Toshio Ogawa

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5068 ,  G06F2217/12 ,  Y02P90/265

    摘要： A method of designing a semiconductor integrated circuit includes defining a tolerable range in which an operating temperature and an operating power supply voltage of a semiconductor integrated circuit are allowed to vary, computing a target temperature and a target power supply voltage that cancel variation in circuit characteristics caused by process variation of the semiconductor integrated circuit, separately for each circuit characteristic responsive to the process variation, and designing the semiconductor integrated circuit such that the semiconductor integrated circuit properly operates with any temperature and power supply voltage within the tolerable range based on an assumption that the semiconductor integrated circuit is to operate within the tolerable range centered substantially at the target temperature and target power supply voltage.

    摘要翻译： 一种设计半导体集成电路的方法包括限定可容许的范围，其中允许半导体集成电路的工作温度和工作电源电压发生变化，计算目标温度和抵消电路特性变化的目标电源电压 由半导体集成电路的工艺变化引起的，分别针对响应于工艺变化的每个电路特性，以及设计半导体集成电路，使得半导体集成电路基于假定在可容忍范围内的任何温度和电源电压适当地工作 半导体集成电路将在基本上以目标温度和目标电源电压为中心的容许范围内工作。

    Semiconductor memory
    113.
    发明申请
    Semiconductor memory 有权
    半导体存储器

    公开(公告)号：US20070192664A1

    公开(公告)日：2007-08-16

    申请号：US11443109

    申请日：2006-05-31

    申请人： Toshio Ogawa ,  Yoshihiro Takemae ,  Yoshinori Okajima ,  Tetsuhiko Endo ,  Yasuro Matsuzaki

    发明人： Toshio Ogawa ,  Yoshihiro Takemae ,  Yoshinori Okajima ,  Tetsuhiko Endo ,  Yasuro Matsuzaki

    IPC分类号： G11C29/00

    CPC分类号： G11C29/42

    摘要： A conversion control unit sets a converting function of a write data conversion unit or a read data conversion unit enabled or disabled for each controller. Accordingly, for a controller which needs original external data, the external data can be inputted and outputted, whereas for a controller which needs converted internal data, the internal data can be inputted and outputted. A data converting function of a conventional controller can be realized in a semiconductor memory, which can reduce the load on the controller. As a result, the performance of a system can be improved. A disabled controller which has no access right cannot read correct data (original data before conversion). Hence, the security of data written into the semiconductor memory can be protected.

    摘要翻译： 转换控制单元设置对每个控制器启用或禁用的写数据转换单元或读数据转换单元的转换功能。 因此，对于需要原始外部数据的控制器，可以输入和输出外部数据，而对于需要转换的内部数据的控制器，可以输入和输出内部数据。 可以在半导体存储器中实现传统控制器的数据转换功能，这可以减少控制器上的负载。 结果，可以提高系统的性能。 无权访问的无​​效控制器无法读取正确的数据（转换前的原始数据）。 因此，可以保护写入半导体存储器的数据的安全性。

    Semiconductor memory
    114.
    发明申请
    Semiconductor memory 审中-公开
    半导体存储器

    公开(公告)号：US20070189100A1

    公开(公告)日：2007-08-16

    申请号：US11443028

    申请日：2006-05-31

    申请人： Toshio Ogawa ,  Yoshihiro Takemae ,  Yoshinori Okajima ,  Tetsuhiko Endo ,  Yasuro Matsuzaki

    发明人： Toshio Ogawa ,  Yoshihiro Takemae ,  Yoshinori Okajima ,  Tetsuhiko Endo ,  Yasuro Matsuzaki

    IPC分类号： G11C7/10 ,  G11C8/00

    CPC分类号： G11C7/1006

    摘要： A memory cell array ARY includes a plurality of sub-arrays SARY. A data transfer unit DTU alternately accesses the sub-arrays SARY to transfer data between the sub-arrays SARY. Accordingly, it is possible to transfer data stored in one of the sub-arrays SARY to another sub-array SARY without outputting the data to a bus connected to a semiconductor memory MEM. For example, a microcontroller CNT in a system MSYS can use the bus during the data transfer since the bus is not used for the data transfer. As a result, it is possible to prevent the performance of the system MSYS from being deteriorated due to the data transfer.

    摘要翻译： 存储单元阵列ARY包括多个子阵列SARY。 数据传输单元DTU交替地访问子阵列SARY以在子阵列SARY之间传送数据。 因此，可以将存储在一个子阵列SARY中的数据传送到另一个子阵列SARY，而不将数据输出到连接到半导体存储器MEM的总线。 例如，系统MSYS中的微控制器CNT可以在数据传输期间使用总线，因为总线不用于数据传输。 结果，可以防止系统MSYS的性能由于数据传输而恶化。

    Memory system
    115.
    发明申请
    Memory system 有权
    内存系统

    公开(公告)号：US20070189052A1

    公开(公告)日：2007-08-16

    申请号：US11443030

    申请日：2006-05-31

    申请人： Toshio Ogawa ,  Yoshihiro Takemae ,  Yoshinori Okajima ,  Tetsuhiko Endo ,  Yasuro Matsuzaki

    发明人： Toshio Ogawa ,  Yoshihiro Takemae ,  Yoshinori Okajima ,  Tetsuhiko Endo ,  Yasuro Matsuzaki

    IPC分类号： G11C13/04 ,  G11C7/10 ,  G11C5/06

    CPC分类号： G06F13/4243 ,  G11C5/066 ,  G11C7/1006

    摘要： A memory controller multiplexes access signals each consisting of a plurality of bits as optical signals and outputs the multiplexed optical signals. At this time, the optical signals whose wavelengths differ depending on memory devices are generated. A memory interface unit demultiplexes the multiplexed optical signals into the original optical signals and converts the demultiplexed optical signals into electrical signals. The memory interface unit determines to which of the memory devices the electrical signals resulting from the conversion should be outputted, according to the wavelengths of the demultiplexed optical signals. This frees the memory controller from a need for transmitting to the memory interface unit a signal for identifying the memory device. The memory interface unit need not include a decoding circuit for identifying the memory device.

    摘要翻译： 存储器控制器将每个由多个位组成的访问信号复用为光信号并输出​​复用的光信号。 此时，产生根据存储器件波长不同的光信号。 存储器接口单元将复用的光信号解复用为原始光信号，并将解复用的光信号转换为电信号。 存储器接口单元根据解复用的光信号的波长来确定应该向哪个存储器件输出由转换产生的电信号。 这使得存储器控制器不需要向存储器接口单元发送用于识别存储器件的信号。 存储器接口单元不需要包括用于识别存储器件的解码电路。

    Piezoelectric device
    116.
    发明申请
    Piezoelectric device 审中-公开
    压电元件

    公开(公告)号：US20070108876A1

    公开(公告)日：2007-05-17

    申请号：US10584083

    申请日：2004-12-24

    申请人： Toshio Ogawa

    发明人： Toshio Ogawa

    IPC分类号： H01L41/187

    CPC分类号： H01L41/094 ,  H01L41/18 ,  H03H9/176 ,  H03H9/585

    摘要： The present invention provides a piezoelectric device having an extremely good secular characteristic, which is a unimorph (or bimorph) element obtained by sticking to a metal plate a piezoelectric single crystal having a giant-lateral-effect piezoelectric performance of a lateral-vibration-mode electromechanical coupling factor k31 not smaller than 70%, the unimorph (or bimorph) element having a bending-vibration-mode electromechanical coupling factor kb not smaller than 50% (or 60%). A plate-form single crystal of PZNT or PMNT is brought into a mono-domain in its thickness direction and in its plate surface so as to be provided with the giant-lateral-effect piezoelectric characteristic, and the single crystal that does not cause secular deterioration is stuck to a metal plate (shim plate) while the mono-domain quality is kept as it is, as a result of which a unimorph (or bimorph) is fabricated.

    摘要翻译： 本发明提供一种具有非常好的长期特性的压电器件，它是通过将具有横向振动模式的巨大横向效应的压电性能的压电单晶粘附在金属板上而获得的单压电晶片（或双压电晶片） 具有不小于70％的机电耦合因子k 31不小于70％的单模（或双压电晶片）元件具有不小于50％的弯曲振动模式机电耦合系数k B b < 或60％）。 PZNT或PMNT的板状单晶在其厚度方向和其板表面被带入单畴，从而具有巨大的横向效应的压电特性，并且不引起世俗的单晶 劣化粘附到金属板（垫板）上，同时保持单畴质量，因此制造了单晶（或双晶型）。