Ring oscillator circuit
    118.
    发明授权

    公开(公告)号:US11641191B2

    公开(公告)日:2023-05-02

    申请号:US17830864

    申请日:2022-06-02

    Abstract: In an embodiment a ring oscillator circuit includes a chain of cascade-coupled inverter stages coupled between an oscillator supply voltage node and a reference voltage node, the oscillator supply voltage node configured to provide an oscillator supply voltage, a current generator circuit coupled between the oscillator supply voltage node and a system supply voltage node configured to provide a system supply voltage, the current generator circuit being configured to inject a current into the oscillator supply voltage node and a biasing circuit including a first bias control transistor and a second bias control transistor coupled in series between the reference voltage node and the oscillator supply voltage node, wherein the first bias control transistor is configured to selectively couple the reference voltage node and the oscillator supply voltage node in response to the oscillator control signal being indicative that the ring oscillator circuit is in an inactive operation state.

    ENVELOPE DETECTION
    120.
    发明申请

    公开(公告)号:US20230056937A1

    公开(公告)日:2023-02-23

    申请号:US17881749

    申请日:2022-08-05

    Abstract: In an embodiment an envelope detection device includes an input terminal configured to receive an amplitude-modulated radio frequency signal, a first resistive element and a first MOS transistor connected in parallel between the input terminal and a first node configured to receive a reference potential, a first capacitive element connected between a gate of the first MOS transistor and the first node, an envelope detection circuit connected to the input terminal and configured to supply a voltage representative of an envelope of the amplitude-modulated signal and a circuit for controlling the first MOS transistor configured to supply a first current to the gate of the first MOS transistor only when the voltage is smaller than a first threshold and draw a second current from the gate of the first MOS transistor only when the voltage is higher than a second threshold, the second threshold being higher than the first threshold.

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