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    Infrared radiation-detecting device
    114.
    发明授权
    Infrared radiation-detecting device 失效
    红外辐射检测装置

    公开(公告)号：US06734452B2

    公开(公告)日：2004-05-11

    申请号：US09825875

    申请日：2001-04-03

    Applicant: Sarath Gunapala ,  John K. Liu ,  Jin S. Park ,  True-Lon Lin ,  Mani Sundaram

    Inventor： Sarath Gunapala ,  John K. Liu ,  Jin S. Park ,  True-Lon Lin ,  Mani Sundaram

    IPC: H01L2906

    CPC classification number: B82Y20/00 ,  G01J5/28 ,  H01L31/035236 ,  Y10S977/759 ,  Y10S977/761 ,  Y10S977/915 ,  Y10S977/927

    Abstract: An AlxGa1−xAs/GaAs/AlxGa1−xAs quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as the “top” (i.e., the upper-most energy barrier) of the quantum well. The energy barrier for thermionic emission is thus equal to the energy required for intersubband absorption. Increasing the energy barrier in this way reduces dark current. The amount of photocurrent generated by the quantum well is maintained at a high level.

    Abstract translation: 描述了表现出界限对准的子带间吸收转变的Al x Ga 1-x As / GaAs / Al x Ga 1-x As量子阱。 当第一激发态具有与量子阱的“顶部”（即，最上面的能量势垒）相同的能量时，存在边界到准近渡的转变。 因此，热离子发射的能量势垒等于子带间吸收所需的能量。 以这种方式增加能量屏障可以减少暗电流。 由量子阱产生的光电流的量保持在高水平。

    Synchronous detection system for multichannel infrared spectroscopy
    115.
    发明授权
    Synchronous detection system for multichannel infrared spectroscopy 失效
    多通道红外光谱同步检测系统

    公开(公告)号：US6080983A

    公开(公告)日：2000-06-27

    申请号：US125564

    申请日：1998-12-21

    Applicant: Augustyn Waczynski ,  Mark L. Hendrickson ,  David J. Hartwick

    Inventor： Augustyn Waczynski ,  Mark L. Hendrickson ,  David J. Hartwick

    IPC: G01J1/04 ,  G01J1/42 ,  G01J1/44 ,  G01J5/28 ,  G01J5/30 ,  G01D5/34

    CPC classification number: G01J5/28 ,  G01J1/04 ,  G01J1/044 ,  G01J1/44 ,  G01J5/30 ,  G01J1/0266 ,  G01J2001/4242 ,  G01J3/0232 ,  G01J3/0289

    Abstract: Disclosed is a radiation detector which includes at least one photoconductive detector and a modulator, which modulates in an on-off manner radiation passing to the photoconductive detector from a radiation source. A bias source is connected to one terminal of the photoconductive detector. A first amplifier is connected to the other terminal of the photoconductive detector, and a second amplifier receives an output of the first amplifier. A first phase detector detects the phase of modulation of the radiation source by the modulator and generates a reference signal relating thereto. A switch in the second amplifier changes, in response to the reference signal generated by the first phase detector, the second amplifier between an inverting state and a non-inverting state as the modulator changes the phase of modulation of the radiation.

    Abstract translation: PCT No.PCT / US97 / 02637第 371 1998年12月21日第 102（e）日期1998年12月21日PCT提交1997年2月21日PCT公布。 出版物WO97 / 31245 日期1997年8月28日公开是一种辐射检测器，其包括至少一个光电导检测器和调制器，其调制从辐射源通过光电导检测器的开关方式的辐射。 偏置源连接到光电检测器的一个端子。 第一放大器连接到光电导检测器的另一个端子，第二放大器接收第一放大器的输出。 第一相位检测器通过调制器检测辐射源的调制相位并产生与其相关的参考信号。 响应于由第一相位检测器产生的参考信号，第二放大器随着调制器改变辐射的调制相位而在反相状态和非反相状态之间改变开关。

    Highly sensitive photoconductive infrared detector
    116.
    发明授权
    Highly sensitive photoconductive infrared detector 失效
    高灵敏度的光电导红外探测器

    公开(公告)号：US5900631A

    公开(公告)日：1999-05-04

    申请号：US813092

    申请日：1997-03-07

    Applicant: Masahiko Sano

    Inventor： Masahiko Sano

    IPC: G01J1/02 ,  G01J5/02 ,  G01J5/28 ,  H01L31/09

    CPC classification number: G01J5/28 ,  H01L31/09

    Abstract: A semiconductor crystal infrared detecting portion structure is provided in a photoconductive infrared detector and is provided at opposite ends with first and second electrodes so biased that the first and second electrodes have a positive potential and a ground potential respectively. The semiconductor crystal infrared detecting portion structure has an infrared receiving part so that the semiconductor crystal infrared detecting portion structure comprises a first half region defined between the infrared receiving part and the first electrode and a second half region defined between the infrared receiving part and the second electrode. At least the second half region reduces in section area toward the second electrode to increase a resistance of at least the second half region.

    Abstract translation: 半导体晶体红外检测部分结构设置在光电导红外检测器中，并且在相对端设置有第一和第二电极，以使得第一和第二电极分别具有正电位和接地电位。 半导体晶体红外线检测部分结构具有红外接收部分，使得半导体晶体红外检测部分结构包括限定在红外线接收部分和第一电极之间的第一半区域和限定在红外线接收部分和第二部分之间的第二半部分区域 电极。 至少第二半区域的截面积朝向第二电极减小，以增加至少第二半区域的电阻。

    Patch coupled infrared photodetector
    117.
    发明授权
    Patch coupled infrared photodetector 失效
    贴片红外光电探测器

    公开(公告)号：US5773831A

    公开(公告)日：1998-06-30

    申请号：US820976

    申请日：1997-03-19

    Applicant: Austin John Brouns

    Inventor： Austin John Brouns

    IPC: H01L27/14 ,  G01J5/28 ,  H01L27/146 ,  H04N5/33 ,  G01J5/20 ,  H01L29/15

    CPC classification number: G01J5/28 ,  H01L27/1462 ,  H01L27/1465

    Abstract: An infrared detector element includes a metallic patch which is positioned on the surface of an upper contact layer. A multiple quantum well ("MQW") infrared sensitive structure is positioned between the first contact layer and a second contact layer. The conductive contact layers are transparent to infrared radiation. A groundplane which is reflective to infrared radiation is positioned adjacent the second contact layer. A resonant cavity is formed between the metallic patch and the groundplane. The thickness of this cavity is not greater than approximately one eighth of the wavelength of the incident infrared radiation within the cavity. The metallic patch functions to couple the incident infrared radiation into the resonant cavity wherein the E-field is oriented substantially normal to the plane of the MQW structure. A plurality of the detector elements can be used to form a single pixel and an array of the pixels can be used to form a complete infrared radiation imager.

    Abstract translation: 红外线检测元件包括位于上接触层的表面上的金属贴片。 多量子阱（“MQW”）红外敏感结构位于第一接触层和第二接触层之间。 导电接触层对红外辐射是透明的。 反射红外辐射的接地面位于第二接触层附近。 在金属贴片和接地面之间形成谐振腔。 该空腔的厚度不大于空腔内入射的红外辐射波长的大约八分之一。 金属贴片用于将入射的红外辐射耦合到谐振腔中，其中E场取向为基本上垂直于MQW结构的平面。 可以使用多个检测器元件来形成单个像素，并且可以使用像素的阵列来形成完整的红外辐射成像器。

    Reduced stress focal plane array for thermal imaging system and method
    118.
    发明授权
    Reduced stress focal plane array for thermal imaging system and method 失效
    用于热成像系统和方法的应力焦平面阵列

    公开(公告)号：US5757000A

    公开(公告)日：1998-05-26

    申请号：US842933

    申请日：1997-04-09

    Applicant: Donald A. Rogowski ,  John P. Long

    Inventor： Donald A. Rogowski ,  John P. Long

    IPC: G01J5/20 ,  G01J5/28 ,  G01J5/34 ,  H01L27/146 ,  G01J5/02

    CPC classification number: H01L27/1467 ,  G01J5/20 ,  G01J5/28 ,  G01J5/34

    Abstract: A focal plane array (30) for a thermal imaging system (20). The focal plane array (30) may include a number of thermal sensitive elements (42) formed by a first series of slots (78) and a second series of slots (80). The thermal sensors (40) may be bounded by a border (41). The thermal sensors (40) may provide a sensor signal output representative of thermal radiation incident to the focal plane array (30). The first series of slots (78) may include a leading first slot (82) and a trailing first slot (84). Additionally, the first series of slots (78) may include a number of substantially parallel first slots therebetween. The second series of slots (80) may include a leading second slot (86) in a trailing second slot (88). The second series of slots (80) may also include a number of substantially parallel second slots therebetween. One of the first slots may extend beyond the leading second slot (86). Additionally, one of the first slots may extend beyond the trailing second slot (88). A common electrode (36) may be coupled to the thermal sensitive elements (42) and to the border (41). An optical coating (34) sensitive to infrared radiation may be provided in communication with the common electrode (36).

    Abstract translation: 一种用于热成像系统（20）的焦平面阵列（30）。 焦平面阵列（30）可以包括由第一系列槽（78）和第二系列槽（80）形成的多个热敏元件（42）。 热传感器（40）可以由边界（41）限定。 热传感器（40）可以提供表示入射到焦平面阵列（30）的热辐射的传感器信号输出。 第一系列槽（78）可以包括先导的第一槽（82）和尾部的第一槽（84）。 另外，第一系列槽（78）可以包括多个基本平行的第一槽。 第二系列槽（80）可以包括尾随第二槽（88）中的前导第二槽（86）。 第二系列槽（80）还可以包括多个基本平行的第二槽。 第一槽中的一个可以延伸超过第二槽（86）。 另外，第一槽中的一个可以延伸超过尾随的第二槽（88）。 公共电极（36）可以耦合到热敏元件（42）和边界（41）。 可以与公共电极（36）连通地提供对红外辐射敏感的光学涂层（34）。

    Split-ring infrared detector
    119.
    发明授权
    Split-ring infrared detector 失效
    分体式红外探测器

    公开(公告)号：US5559331A

    公开(公告)日：1996-09-24

    申请号：US632790

    申请日：1990-12-24

    Applicant: Richard C. McKee

    Inventor： Richard C. McKee

    IPC: G01J5/28 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0352

    CPC classification number: H01L31/02024 ,  G01J5/28 ,  H01L31/0232 ,  H01L31/03529 ,  Y02E10/50

    Abstract: A resonant, photoconductive detector for infrared radiation in which a reduced-volume pattern of the photoconductor permits impedance-matching to free space. The photoconductor pattern is a split-ring pattern, typically made of HgCdTe, which is virtually cylindrically symmetric, yielding a non-polarization-sensitive response. The region below the patterned photoconductor is a quarter-wavelength resonant cavity type structure. The ohmic contacts are conductively distanced from one another by use of the split-ring pattern. Spacing dimensions are slightly less than a wavelength for the infrared wavelengths to be absorbed; but ring-width dimensions of the photoconductor are substantially less to effect the volume reduction and the corresponding detectivity and radiation-hardness improvements. The essentially cylindrical isotropic pattern eases fabrication by averaging etching nonuniformities.

    Abstract translation: 用于红外辐射的共振光导检测器，其中光电导体的体积减小的图案允许阻抗匹配到自由空间。 光电导体图案是分裂环图案，通常由HgCdTe制成，其实际上是圆柱对称的，产生非偏振敏感的响应。 图案化感光体下面的区域是四分之一波长的谐振腔型结构。 欧姆接触通过使用分裂环图案彼此导电地间隔开。 间距尺寸略小于要吸收的红外波长的波长; 但是光电导体的环宽度尺寸显着较小，以致影响体积减小和相应的检测率和辐射硬度的改善。 基本上圆柱形的各向同性图案通过平均蚀刻不均匀性来简化制造。

    Method and apparatus for detecting infrared radiation
    120.
    发明授权
    Method and apparatus for detecting infrared radiation 失效
    用于检测红外辐射的方法和装置

    公开(公告)号：US4970567A

    公开(公告)日：1990-11-13

    申请号：US393044

    申请日：1989-08-08

    Applicant: William L. Ahlgren ,  Eric F. Schulte

    Inventor： William L. Ahlgren ,  Eric F. Schulte

    IPC: G01J5/28 ,  H01L31/0304 ,  H01L31/032 ,  H01L31/109 ,  H01L31/18

    CPC classification number: H01L31/03046 ,  G01J5/28 ,  H01L31/0324 ,  H01L31/109 ,  H01L31/1836 ,  Y02E10/544

    Abstract: A method and apparatus for detecting infrared radiation is disclosed. The apparatus comprises a substrate (12) having readout and signal processing circuits (14) integrated therein. The substrate (12) is formed from a material selected from the group consisting of silicon, gallium arsenide, or germanium. A first semiconductor layer (28) is grown on the substrate (12) from a material selected from the group consisting of mercury-cadmium-telluride, mercury-zinc-telluride, mercury-cadmium-selenide, mercury-zinc-selenide, mercury-cadmium-sulfide, mercury-zinc-sulfide, lead-tin-telluride, lead-tin-selenide, lead-tin-sulfide, indium-arsenide-antimonide, gallium-indium-antimonide, or gallium-antimonide-arsenide. A second semiconductor layer (30) is then grown on the first semiconductor layer (28).

    Abstract translation: 公开了一种用于检测红外辐射的方法和装置。 该装置包括具有集成在其中的读出和信号处理电路（14）的衬底（12）。 基板（12）由选自硅，砷化镓或锗的材料形成。 第一半导体层（28）从选自镉 - 碲化镉，汞 - 碲化锌，汞 - 硒化镉，汞 - 硒化锌，汞 - 镉 - 硒化物的材料的材料在衬底（12）上生长， 硫化镉，硫化汞 - 硫化锌，铅 - 锡 - 碲化物，铅 - 锡 - 硒化物，铅 - 锡硫化物，砷化铟 - 锑化锑，锑化铟 - 锑化锑 - 砷化镓。 然后在第一半导体层（28）上生长第二半导体层（30）。

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