公开(公告)号：US4352117A

公开(公告)日：1982-09-28

申请号：US155729

申请日：1980-06-02

Applicant: Jerome J. Cuomo ,  Russell W. Dreyfus ,  Jerry M. Woodall

Inventor： Jerome J. Cuomo ,  Russell W. Dreyfus ,  Jerry M. Woodall

IPC: H01J1/30 ,  H01J1/308 ,  H01J1/34 ,  H01L27/14

CPC classification number: H01J1/308

Abstract: A high brightness, essentially monoenergetic electron source is constructed in solid state material by providing a semiconductor body with an electron confinement barrier over most of the surface, the barrier having a relatively small opening exposing the semiconductor body, in the relatively small opening a material is placed in contact with the semiconductor body that has a work function that is lower than the energy of excited electrons in the semiconductor. In this structure electrons from hole-electron pairs generated in the semiconductor are repelled and recombination is inhibited by the barrier except in the relatively small opening where they are injected into the surrounding environment through the lower work function material. The hole-electron pair generation may be by irradiation or by electrical injection. The electron source is useful for such applications as high brightness sources, digital communications, cathode ray tube electron sources and scanning electron microscopes.

Abstract translation: 通过在绝大多数表面上提供具有电子约束势垒的半导体器件，在固态材料中构造高亮度，基本上单能量的电子源，该阻挡层具有暴露半导体本体的相对较小的开口， 与具有比半导体中激发的电子的能量低的功函数的半导体本体接触。 在这种结构中，在半导体中产生的空穴 - 电子对的电子被排斥，复合被屏障抑制，除了在相对小的开口中，它们通过较低的功函数材料注入到周围环境中。 可以通过照射或电喷射来产生空穴 - 电子对。 电子源可用于高亮度源，数字通信，阴极射线管电子源和扫描电子显微镜等应用。

公开(公告)号：US4040079A

公开(公告)日：1977-08-02

申请号：US724760

申请日：1976-09-20

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/308 ,  H01J9/02 ,  H01L29/161 ,  H01L27/14

CPC classification number: H01J9/022 ,  H01J1/308

Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

公开(公告)号：US3972060A

公开(公告)日：1976-07-27

申请号：US451754

申请日：1974-03-18

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/30 ,  H01J1/308 ,  H01J1/34 ,  H01L29/66 ,  H01L29/161 ,  H01L27/14 ,  H01L29/20

CPC classification number: H01J1/308

Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden band width is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

Abstract translation: 一种半导体冷发射器件，包括至少两个不同的半导体和具有n型导电性的第一区域和p型导电性的第二区域以及有效禁带宽度小于 所述第一区域和用于向所述结点施加电压以使从所述第一区域注入到所述第二区域的电子从所述第二区域的表面发射到外部的装置。

公开(公告)号：US3808477A

公开(公告)日：1974-04-30

申请号：US32158973

申请日：1973-01-08

Applicant: GEN ELECTRIC

Inventor： SWANK R

IPC: H01J1/308 ,  H01L15/00

CPC classification number: H01J1/308

Abstract: A semiconductor cold cathode for emitting electrons into a vacuum is described as comprising a semiconductor substrate of a first conductivity type in contact with an electrode for forming a potential energy barrier therewith and having a heterogeneous network of conductors and open spaces for enhancing the emission of electrons into the vacuum. In another embodiment of the invention, the surface-adjacent portion of the semiconductor substrate in the regions underlying the network of conductors is doped with an opposite type conductivity impurity to increase the potential energy barrier in the substrate adjacent to the conductors so as to further enhance electron emission from the open spaces in the heterogeneous network. In yet another embodiment of the invention, the surface-adjacent region of the substrate is provided with a layer of opposite-type conductivity material so as to further increase the potential barrier at the grids and also to increase the energy level of the emitted electrons.

Abstract translation: 将用于将电子发射到真空中的半导体冷阴极描述为包括与用于形成势能势垒的电极接触的第一导电类型的半导体衬底，并且具有用于增强电子发射的导体和开放空间的异质网络 进入真空。 在本发明的另一个实施例中，在导体网络下面的区域中的半导体衬底的表面相邻部分掺杂有相反类型的导电杂质，以增加与导体相邻的衬底中的势垒，从而进一步增强 来自异构网络中的开放空间的电子发射。 在本发明的另一个实施例中，衬底的表面相邻区域设置有相反导电材料层，以便进一步增加栅格处的势垒，并且还增加发射电子的能级。

公开(公告)号：US3777209A

公开(公告)日：1973-12-04

申请号：US3777209D

申请日：1972-05-17

Applicant: RCA CORP

Inventor： MCDONIE A ,  FAULKNER R ,  RHOADS J

IPC: H01J43/20 ,  H01J1/30 ,  H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J40/06 ,  H01J43/08 ,  H01J1/13 ,  H01J1/14 ,  H01J19/06

CPC classification number: H01J40/06 ,  H01J43/08

Abstract: A non-thermionic electron emissive tube of the type comprising an evacuated envelope, an electron emissive cathode assembly in the envelope, and a collector anode for electrons emitted from the emissive layer. The cathode assembly comprises a thin ceramic substrate. On one face of the substrate is a non-thermionic cathode. On the opposite surface is a heater pattern of resistive metallizing.

Abstract translation: 包括真空外壳，外壳中的电子发射阴极组件和从发射层发射的电子的集电极的类型的非热离子电子发射管。 阴极组件包括薄陶瓷衬底。 在衬底的一个面上是非热离子阴极。 相反的表面是电阻金属化的加热器图案。

公开(公告)号：US3742263A

公开(公告)日：1973-06-26

申请号：US3742263D

申请日：1971-04-19

Applicant: NAT RES DEV

Inventor： LAMB D ,  BRIGHT A ,  MAKIN B

IPC: G01F1/64 ,  G01N30/64 ,  H01J1/308 ,  H01T23/00 ,  H02N3/00 ,  G01R27/02 ,  H02N1/00

CPC classification number: H02N3/00 ,  G01F1/64 ,  G01N30/64 ,  H01J1/308 ,  H01T23/00

Abstract: A device for injecting electric charge into fluids consists of a p-n junction diode having the junctions so positioned that an active region of the semi-conductor is in contact with the fluid. A reverse electric field of a magnitude sufficient to release charge carriers having energies greater than the potential barrier at the surface of the semi-conductor is applied to the junction so that charge carriers are emitted from the active region. An electrode is also immersed in the fluid to enable a drift field to be established to attract charge carriers in the fluid away from the surface of the semi-conductor.

Abstract translation: 用于将电荷注入流体的装置由p-n结二极管组成，该p-n结二极管具有如此定位使得半导体的有源区与流体接触的结。 足以释放具有大于半导体表面处的势垒的能量的电荷载流子的反向电场被施加到结，使得电荷载流子从有源区发射。 电极也浸没在流体中以使得能够建立漂移场以吸引流体中的电荷载体远离半导体的表面。

公开(公告)号：US3290192A

公开(公告)日：1966-12-06

申请号：US47069365

申请日：1965-07-09

Applicant: MOTOROLA INC

Inventor： KELLEY DALE T

IPC: C23F1/00 ,  C23F1/02 ,  H01J1/308 ,  H01L21/00

CPC classification number: H01J1/308 ,  C23F1/00 ,  C23F1/02 ,  H01L21/00

公开(公告)号：US3114070A

公开(公告)日：1963-12-10

申请号：US77995358

申请日：1958-12-12

Applicant: ASS ELECT IND MANCHESTER LTD

Inventor： ROBERT STRATTON

IPC: H01J1/308

CPC classification number: H01J1/308

公开(公告)号：US12051557B2

公开(公告)日：2024-07-30

申请号：US17609445

申请日：2020-03-23

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Katsuhisa Murakami ,  Masayoshi Nagao

IPC: H01J1/312 ,  H01J1/308

CPC classification number: H01J1/308 ,  H01J1/312 ,  H01J2201/30461

Abstract: An electron emission device having a narrow electron energy range and excellent electron emitting efficiency, and an electron microscope using the electron emission device. An electron emission device having a laminated structure in which a first electrode, an electron accelerating layer made of an insulating film, and a second electrode are laminated in this order, in which the second electrode through which electrons transmit and from whose surface electrons emit, and the energy width of the emitted electrons is 100 meV or more and 600 meV or less. For example, graphene having one or more layers and 20 layers or less can be used as the second electrode, and hexagonal boron nitride can be used as the insulating film.

公开(公告)号：US20220216026A1

公开(公告)日：2022-07-07

申请号：US17609445

申请日：2020-03-23

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Katsuhisa MURAKAMI ,  Masayoshi NAGAO

IPC: H01J1/308 ,  H01J1/312

Abstract: An electron emission device having a narrow electron energy range and excellent electron emitting efficiency, and an electron microscope using the electron emission device. An electron emission device having a laminated structure in which a first electrode, an electron accelerating layer made of an insulating film, and a second electrode are laminated in this order, in which the second electrode through which electrons transmit and from whose surface electrons emit, and the energy width of the emitted electrons is 100 meV or more and 600 meV or less. For example, graphene having one or more layers and 20 layers or less can be used as the second electrode, and hexagonal boron nitride can be used as the insulating film.