Abstract:
The integrated-optical chemical and/or biochemical sensor comprises a resonant waveguide structure (1). A chemical and/or biochemical substance (2) to be sensed can be deposited on a surface of the waveguide structure (1). Incident light (31) is coupled into the waveguide structure (1) by a grating structure (G), making use of a first set of degrees of freedom. The incoupled light (32) interacts with the substance (2), which emits fluorescent light (42). Fluorescent light (42) is coupled out by the same grating structure (G), making use of a second set of degrees of freedom which differs from the first set of degrees of freedom in at least one degree of freedom. For example, the incident light (31) is coupled in using a first diffraction order mg,ex=1, and the emitted (42) light is coupled out using a second, different diffraction order mg,em=2. By this measure, the emitted outcoupled light (43) is clearly separated from exciting light (33) which is reflected and/or coupled out using the first diffraction order mg,ex=1. Such a clear separation increases the signal-to-noise ratio of the sensor signal.
Abstract:
An object detection system employs a photo-emitter and photo-detector for synchronously detecting and processing an optical signal reflected from an object in a pinch zone of a window or door opening. A photo-emitter light signal is modulated by a modulation signal having an active phase and an inactive phase. The optical detector provides an optical detector signal that is a function of the intensity of the received light. The detected light signal is synchronously detected using a switching amplifier that multiplies the reflected modulated light signal by a first gain during the active phase and by a second gain during the inactive phase. The duration of the active and inactive phases and the first and second gains are selected such that the system gain will average to zero for ambient light when integrated over a predetermined measurement period. The synchronously detected signal is subtracted from a predetermined offset voltage, and this difference is then integrated over the measurement period. The output of the integrator is then compared to a predetermined threshold value.
Abstract:
A method of partial area-specific-fertilization of plants which, under natural light during the fertilizer application, the chlorophyll content of the plants is ascertained by means of sensors by optical reflection measurement in the visible and near infrared spectral range, the chlorophyll content is registered and from the chlorophyll content a measurement of the nutrient state of the plant is determined and from the nutrient state of the plants a computer controls the fertilizer quantity to be applied, characterized in that the reflection measurements are taken simultaneously as inclined measurements with respect to the nadir with measurement devices oriented oppositely to one another free from shadows with light guides an the influence of the solar azimuth angle is eliminated by detecting the noise signals from all measurement directions.
Abstract:
An anti-reflective coating having a composite layer of silicon nitride and silicon dioxide may be formed over the entire photosensitive region of the photodetector to minimize the amount of reflection. The composite layer comprises a silicon nitride layer and a dielectric layer contiguous to the silicon nitride layer. The anti-reflective coating may be formed in a CMOS process for fabricating the PN junction in the photodiode and CMOS devices for amplifying the photodetector signal, where the polysilicon gate layer is used as a etch stop. The P+ or N+ material in the PN junction of the photodiode has a distributed design where two portions of the region are separated by a distance in the range of Xd to 2Xd, where Xd is the one-sided junction depletion width, to enhance the electric field and to reduce the distance traveled by the carriers for enhancing bandwidth. A heavily doped region of the opposite type may be added between the two portions to further enhance the electric field. A mask is used to shield a portion of the substrate in which the photodetector region has been or is to be formed when other portions of the substrate region are implanted with a dopant to adjust at least one of the threshold voltages of the other portions. The mask prevents the photodetector region from being affected by such implant.
Abstract:
A light detection circuit employed in an electronic device such as an integrated circuit card is disclosed. The light detection circuit having a constant voltage supply connected to a power supply voltage, a sensing circuit including an element responsive to light and connected to the power supply voltage, a first comparator for determining a current sensing state according to an exposure to light, a latch circuit for storing the output of the first circuit, and a second comparator for generating an output signal which controls the constant voltage supply, the sensing circuit, and the latch circuit. The latch circuit outputs a light detection signal in response to the output of the second comparator.
Abstract:
An indexer for magazine shelves of a magazine and wafer-shaped objects contained therein has the object of ensuring accurate access in any desired and predeterminable magazine plane, also for magazines which are provided with an opening on only one removing and charging side, by means of an all-purpose indexing, wherein it is possible to differentiate between various standardized magazine and wafer formats. The magazine shelves and the wafer-shaped objects are detected by an optoelectronic sensor arrangement, at least a portion of which is designed as a distance measuring system. The indexer is applicable in the manufacture of integrated circuits, in particular, for handling wafer-shaped objects in the form of semiconductors and masks.
Abstract:
In order to compensate for deterioration in gain caused by decreases in signal source impedance on a higher frequency region, a frequency characteristic compensating inductor is inserted between a light-receiving device and its bias power supply. The light-receiving device is connected to the bias power supply by way of the inductor. By causing the resonance frequency determined by the inductor and the parasitic capacitance and junction capacitance of device to coincide in the vicinity of the upper limit frequency of the band of the optical receiver, the equivalent signal source impedance of the light-receiving device can be enhanced, thus compensating for the decrease in gain of the receiver.
Abstract:
Eight resistors having resistance values of R×2i (i=0 to 7) (&OHgr;) are serially connected while eight switches exhibiting parasitic resistance values of r×2i (&OHgr;) in ON states are connected in parallel with the resistors respectively, for changing a resistance value by turning on/off the switches. The resistors are connected between an inversion input terminal of an operational amplifier and a terminal, and a non-inversion input terminal receives a prescribed reference voltage. Between the inversion input terminal and an output terminal of the operational amplifier, a resistor and a switch of a variable resistance circuit forming a negative feedback loop are connected to the output terminal while another resistor and another switch are connected to the inversion input terminal. In the variable resistance circuit, the resistance values of the resistors are successively increased from the side of the terminal, so that the resistor connected to the inversion input terminal has the maximum resistance value. Thus, only a single node is present ahead of the last resistor while a parasitic capacitance is minimized, whereby the frequency characteristic of an operational amplification circuit can be improved.
Abstract:
The present invention provides a programmable image antenna formed on the face plate of a cathode ray tube (CRT) or on another substrate. The inner CRT face is coated with a silicon semiconductor material replacing conventional phosphors utilized in CRTs for generating visual images. An electron beam impinging upon the silicon-coated CRT face plate creates conductive areas during liberation of minority carriers, in the form of electron-hole pairs. Antenna elements having a virtually unlimited variety of shapes and/or sizes can be formed on the CRT face.
Abstract:
A method and apparatus for compensating non-uniformity of imaging response is described. A plurality of locations on the imaging device is selected. The light intensity for each of the selected location is measured. The measured light intensities are normalized using a reference light intensity and the normalized light intensities are stored in a memory.