公开(公告)号：US06887735B2

公开(公告)日：2005-05-03

申请号：US10374462

申请日：2003-02-24

Applicant: Koon Wing Tsang

Inventor： Koon Wing Tsang

IPC: H01L31/10 ,  G02B1/11 ,  H01L31/0216 ,  H01L21/336

CPC classification number: H01L27/1443 ,  H01L31/02161

Abstract: An anti-reflective coating having a composite layer of silicon nitride and silicon dioxide may be formed over the entire photosensitive region of the photodetector to minimize the amount of reflection. The composite layer comprises a silicon nitride layer and a dielectric layer contiguous to the silicon nitride layer. The anti-reflective coating may be formed in a CMOS process for fabricating the PN junction in the photodiode and CMOS devices for amplifying the photodetector signal, where the polysilicon gate layer is used as a etch stop. The P+ or N+ material in the PN junction of the photodiode has a distributed design where two portions of the region are separated by a distance in the range of Xd to 2Xd, where Xd is the one-sided junction depletion width, to enhance the electric field and to reduce the distance traveled by the carriers for enhancing bandwidth. A heavily doped region of the opposite type may be added between the two portions to further enhance the electric field. A mask is used to shield a portion of the substrate in which the photodetector region has been or is to be formed when other portions of the substrate region are implanted with a dopant to adjust at least one of the threshold voltages of the other portions. The mask prevents the photodetector region from being affected by such implant.

Abstract translation: 可以在光电检测器的整个感光区域上形成具有氮化硅和二氧化硅复合层的抗反射涂层，以使反射量最小化。 复合层包括氮化硅层和与氮化硅层相邻的电介质层。 抗反射涂层可以以用于制造光电二极管中的PN结的CMOS工艺形成，并且用于放大光电检测器信号的CMOS器件，其中多晶硅栅极层用作蚀刻停止。 光电二极管的PN结中的P +或N +材料具有分布式设计，其中两部分区域在Xd至2Xd的范围内分开一段距离，其中Xd为单侧结耗尽宽度，以增强电 并减少载波为增强带宽所行进的距离。 可以在两个部分之间添加相反类型的重掺杂区域以进一步增强电场。 当衬底区域的其他部分被注入掺杂剂以调整其它部分的阈值电压中的至少一个时，掩模用于屏蔽其中已经或将要形成光电探测器区域的衬底的一部分。 掩模防止光电检测器区域受到这种植入物的影响。

公开(公告)号：US20090237423A1

公开(公告)日：2009-09-24

申请号：US12076572

申请日：2008-03-20

Applicant: Cheng-Chung Shih ,  Koon Wing Tsang

Inventor： Cheng-Chung Shih ,  Koon Wing Tsang

IPC: G09G5/10 ,  G09G3/36

CPC classification number: G09G3/3406 ,  G09G2320/0242 ,  G09G2320/0285 ,  G09G2320/064 ,  G09G2320/0646 ,  G09G2320/0666 ,  G09G2320/0673 ,  G09G2360/144

Abstract: This invention discloses a display apparatus capable of adjusting gamma and brightness based on ambient light and its display adjustment method. The display apparatus is adjusted to display an image output signal based on an image input signal and the correlated color temperature and brightness of an ambient light. The display apparatus includes a plurality of light sensing circuits, a memory unit, an image processing module, and a display module. The light sensing circuit senses the ambient light to produce a digital ambient color temperature index value. The memory unit stores a lookup table of brightness expression rates and gamma adjustment parameters corresponding to different color temperature index values. The image processing module produces a gamma adjustment parameter by a lookup table based on the color temperature index value and generates the gamma expression rate of the image input signal. The image processing module adjusts the image input signal to generate the image output signal based on the gamma adjustment parameter. The display module displays the image output signal.

Abstract translation: 本发明公开了一种能够基于环境光调整伽马和亮度的显示装置及其显示调整方法。 调整显示装置以基于图像输入信号和环境光的相关色温和亮度显示图像输出信号。 显示装置包括多个感光电路，存储单元，图像处理模块和显示模块。 光感测电路感测环境光以产生数字环境色温指数值。 存储单元存储对应于不同色温指数值的亮度表达速率和伽马调整参数的查找表。 图像处理模块通过基于色温指数值的查找表产生伽马调整参数，并产生图像输入信号的伽马表达速率。 图像处理模块基于伽马调整参数调整图像输入信号以产生图像输出信号。 显示模块显示图像输出信号。

公开(公告)号：US5784507A

公开(公告)日：1998-07-21

申请号：US312286

申请日：1994-04-26

Applicant: James W. Holm-Kennedy ,  Koon Wing Tsang ,  Datong Yang

Inventor： James W. Holm-Kennedy ,  Koon Wing Tsang ,  Datong Yang

IPC: G01J3/26 ,  G02B6/12 ,  G02B6/122 ,  G02B6/293

CPC classification number: G02B6/12007 ,  G01J3/0259 ,  G01J3/26 ,  G02B6/1228 ,  G01J3/0256 ,  G02B2006/12109 ,  G02B2006/12173 ,  G02B2006/12195

Abstract: A top incident spectrometer includes a first distributed wavelength wedge filter region of order n.sub.1 that discriminates incoming radiation as a function of wedge location, at least one second wedge region order n.sub.2 (which region may be a graded dielectric film), and an underlying detector array. In another embodiment, a second dielectric wedge element includes a Fabrey-Perot etalon, a wedge dielectric film, or a graded index film matching the second dielectric wedge region to an underlying substrate. One or more slopes associated with wedge elements may also be varied to alter filter characteristics. Spatial characteristics may further be modified by including a dielectric material whose dielectric constant varies as a function of location. Wedge filter crosstalk is minimized by partitioning a wedge dielectric region in the lateral dimension. Another embodiment provides an edge incident spectrometer including an optical waveguide or thin film structure whose spatial optical impedance varies as a function of position. Outcoupling of optical radiation occurs as a function of wavelength along the spectrometer propagation direction. Outcoupling of optical radiation may also be made to overlying structures, or to regions within a common, preferably solid state, structure. Wedge structures may further be combined to intentionally create gaps in the spectral transmission for a filter structure. A shadow masking fabricates thin film elements having spatially varying features. A material is deposited onto a substrate using an edge to provide a shadow mask affecting the deposition stream.

Abstract translation: 顶部入射光谱仪包括第n阶n阶第一分布波长楔形滤波器区域，其区分作为楔形位置的函数的入射辐射，至少一个第二楔形区域阶数n2（该区域可以是渐变电介质膜）和底层检测器阵列 。 在另一个实施例中，第二介电楔形元件包括Fabrey-Perot标准具，楔形电介质膜或将第二介电楔形区域与下面的衬底相匹配的渐变折射率膜。 与楔形元件相关联的一个或多个斜面也可以改变以改变滤波器特性。 通过包括其介电常数随着位置的函数而变化的介电材料可以进一步修改空间特性。 楔形滤波器串扰通过在侧向尺寸上划分楔形电介质区域来最小化。 另一个实施例提供了一种边缘入射光谱仪，其包括光学波导或薄膜结构，其空间光阻抗随着位置的变化而变化。 光辐射的外耦合作为沿着光谱仪传播方向的波长的函数发生。 光辐射的外耦合也可以制成覆盖的结构或共同的，优选固态的结构中的区域。 楔形结构可以进一步组合以有意地在滤波器结构的频谱传输中产生间隙。 阴影掩模制造具有空间变化特征的薄膜元件。 使用边缘将材料沉积到基底上，以提供影响沉积流的荫罩。

公开(公告)号：US06437311B2

公开(公告)日：2002-08-20

申请号：US09779541

申请日：2001-02-06

Applicant: Koon Wing Tsang

Inventor： Koon Wing Tsang

IPC: H01J4014

CPC classification number: H01L27/1443 ,  H01L31/02161

Abstract: An anti-reflective coating having a composite layer of silicon nitride and silicon dioxide may be formed over the entire photosensitive region of the photodetector to minimize the amount of reflection. The composite layer comprises a silicon nitride layer and a dielectric layer contiguous to the silicon nitride layer. The anti-reflective coating may be formed in a CMOS process for fabricating the PN junction in the photodiode and CMOS devices for amplifying the photodetector signal, where the polysilicon gate layer is used as a etch stop. The P+ or N+ material in the PN junction of the photodiode has a distributed design where two portions of the region are separated by a distance in the range of Xd to 2Xd, where Xd is the one-sided junction depletion width, to enhance the electric field and to reduce the distance traveled by the carriers for enhancing bandwidth. A heavily doped region of the opposite type may be added between the two portions to further enhance the electric field. A mask is used to shield a portion of the substrate in which the photodetector region has been or is to be formed when other portions of the substrate region are implanted with a dopant to adjust at least one of the threshold voltages of the other portions. The mask prevents the photodetector region from being affected by such implant.

Abstract translation: 可以在光电检测器的整个感光区域上形成具有氮化硅和二氧化硅复合层的抗反射涂层，以使反射量最小化。 复合层包括氮化硅层和与氮化硅层相邻的电介质层。 抗反射涂层可以以用于制造光电二极管中的PN结的CMOS工艺形成，并且用于放大光电检测器信号的CMOS器件，其中多晶硅栅极层用作蚀刻停止。 光电二极管的PN结中的P +或N +材料具有分布式设计，其中两部分区域在Xd至2Xd的范围内分开一段距离，其中Xd为单侧结耗尽宽度，以增强电 并减少载波为增强带宽所行进的距离。 可以在两个部分之间添加相反类型的重掺杂区域以进一步增强电场。 当衬底区域的其他部分被注入掺杂剂以调整其它部分的阈值电压中的至少一个时，掩模用于屏蔽其中已经或将要形成光电探测器区域的衬底的一部分。 掩模防止光电检测器区域受到这种植入物的影响。

公开(公告)号：US07521666B2

公开(公告)日：2009-04-21

申请号：US11174455

申请日：2005-07-06

Applicant: Koon Wing Tsang

Inventor： Koon Wing Tsang

IPC: H01J40/14 ,  H01J5/16 ,  H01L31/0232 ,  G01J3/50

CPC classification number: G02B5/282 ,  G02B5/288 ,  H01L27/14621 ,  H01L31/02162

Abstract: The present invention provides a multi-cavity Fabry-Perot ambient light filter apparatus. The multi-cavity Fabry-Perot ambient light filter apparatus comprises a plurality of Fabry-Perot cavities, each of the plurality of Fabry-Perot cavities covering one of a plurality of photodiodes; wherein each of the plurality of Fabry-Perot cavities has two partially reflective layers and one interferometric layer sandwiching between the two partially reflective layers, and shares one of the two partially reflective layers with a neighboring Fabry-Perot cavity and thereby stair stacking with the neighboring Fabry-Perot cavity. The plurality of Fabry-Perot cavities are capable of blocking the ambient light except for a wavelength spectrum that is recognizable for human eyes, thereby effectively accomplishes excellent IR blocking from non-visible light spectra.

Abstract translation: 本发明提供一种多腔法布里 - 珀罗环境光过滤装置。 多腔法布里 - 珀罗环境光过滤器装置包括多个法布里 - 珀罗腔，多个法布里 - 珀罗腔中的每一个覆盖多个光电二极管中的一个; 其中多个法布里 - 珀罗腔中的每一个具有两个部分反射层和夹在两个部分反射层之间的一个干涉层，并且与相邻的法布里 - 珀罗腔分享两个部分反射层中的一个，从而与相邻的 法布里 - 珀罗腔。 多个法布里 - 珀罗腔能够阻挡除了人眼可识别的波长光谱之外的环境光，从而有效地从不可见光谱完成IR阻挡。

公开(公告)号：US07460009B2

公开(公告)日：2008-12-02

申请号：US11483633

申请日：2006-07-11

Applicant: Koon Wing Tsang ,  Chih-Cheng Chien

Inventor： Koon Wing Tsang ,  Chih-Cheng Chien

IPC: G08B29/00

CPC classification number: G01M11/00 ,  G01J1/08 ,  G01J1/16

Abstract: A light source of testing a sensor, a test apparatus and a method are disclosed. The test apparatus includes a light source, a photo-mask and a sensor bearing area. The light source includes a plurality of light emitting diodes with parallel connection for emitting a test light. The light source is disposed in a photo-mask. The photo-mask has a diffuser interface. The test light is then diffused to the outside of the photo-mask through the diffuser interface. The sensor bearing area is for bearing the sensor. The sensor bearing area is disposed at the outside of the photo-mask and locates at a position to enable the test light to reach. Therefore, the test light emitted by the light source is used to test the sensor.

Abstract translation: 公开了测试传感器的光源，测试装置和方法。 测试装置包括光源，光掩模和传感器支承区域。 光源包括多个发光二极管，并联连接用于发射测试光。 光源设置在光掩模中。 光掩模具有扩散器接口。 然后，测试光通过漫射器界面扩散到光掩模的外部。 传感器轴承区域用于承载传感器。 传感器支撑区域设置在光掩模的外侧，并且位于允许测试光达到的位置。 因此，由光源发出的测试光用于测试传感器。

公开(公告)号：US06838654B2

公开(公告)日：2005-01-04

申请号：US10052472

申请日：2002-01-17

Applicant: Brian N. Kuo ,  Ing-Jye Lan ,  Koon Wing Tsang ,  Pei-Ling Hsu

Inventor： Brian N. Kuo ,  Ing-Jye Lan ,  Koon Wing Tsang ,  Pei-Ling Hsu

IPC: G01D5/347 ,  G01D5/30 ,  G01D5/36 ,  G01J1/44 ,  H01L31/10 ,  H03F3/08 ,  H03F3/343 ,  H01J40/14 ,  G01D5/34

CPC classification number: G01D5/305 ,  G01D5/36

Abstract: A first device comprising a first current mirror is used to amplify the output of a first photodetector. A second device comprising a current mirror arrangement is employed to amplify the output of a second photodetector. The outputs of the two devices are then compared to provide a signal useful for many applications, including that for determining the position of a rotating member or of a member in relative motion to another member. Preferably, no feedback action is used for the amplification of the output of at least one of the photodetectors.

公开(公告)号：US06555410B2

公开(公告)日：2003-04-29

申请号：US09778372

申请日：2001-02-07

Applicant: Koon Wing Tsang

Inventor： Koon Wing Tsang

IPC: H01L2100

CPC classification number: H01L27/1443 ,  H01L31/02161

Abstract: An anti-reflective coating having a composite layer of silicon nitride and silicon dioxide may be formed over the entire photosensitive region of the photodetector to minimize the amount of reflection. The composite layer comprises a silicon nitride layer and a dielectric layer contiguous to the silicon nitride layer. The anti-reflective coating may be formed in a CMOS process for fabricating the PN junction in the photodiode and CMOS devices for amplifying the photodetector signal, where the polysilicon gate layer is used as a etch stop. The P+ or N+ material in the PN junction of the photodiode has a distributed design where two portions of the region are separated by a distance in the range of Xd to 2Xd, where Xd is the one-sided junction depletion width, to enhance the electric field and to reduce the distance traveled by the carriers for enhancing bandwidth. A heavily doped region of the opposite type may be added between the two portions to further enhance the electric field. A mask is used to shield a portion of the substrate in which the photodetector region has been or is to be formed when other portions of the substrate region are implanted with a dopant to adjust at least one of the threshold voltages of the other portions. The mask prevents the photodetector region from being affected by such implant.

公开(公告)号：US06218719B1

公开(公告)日：2001-04-17

申请号：US09234015

申请日：1999-01-19

Applicant: Koon Wing Tsang

Inventor： Koon Wing Tsang

IPC: H01L3106

CPC classification number: H01L27/1443 ,  H01L31/02161

Abstract: An anti-reflective coating having a composite layer of silicon nitride and silicon dioxide may be formed over the entire photosensitive region of the photodetector to minimize the amount of reflection. The composite layer comprises a silicon nitride layer and a dielectric layer contiguous to the silicon nitride layer. The anti-reflective coating may be formed in a CMOS process for fabricating the PN junction in the photodiode and CMOS devices for amplifying the photodetector signal, where the polysilicon gate layer is used as a etch stop. The P+ or N+ material in the PN junction of the photodiode has a distributed design where two portions of the region are separated by a distance in the range of Xd to 2Xd, where Xd is the one-sided junction depletion width, to enhance the electric field and to reduce the distance traveled by the carriers for enhancing bandwidth. A heavily doped region of the opposite type may be added between the two portions to further enhance the electric field. A mask is used to shield a portion of the substrate in which the photodetector region has been or is to be formed when other portions of the substrate region are implanted with a dopant to adjust at least one of the threshold voltages of the other portions. The mask prevents the photodetector region from being affected by such implant.