摘要:
Vertical transfer portions are provided for the respective columns of photodetectors arranged in a matrix. A charge transfer direction of every other vertical transfer portions is opposite to that of the remaining vertical transfer portions. The charges transferred in the opposite directions are outputted in different horizontal transfer portions. The charges transferred by the two horizontal transfer portions are outputted therefrom and brought together in a united form so as to be continuously outputted.
摘要:
An exposure controlling apparatus is provided for an electronic still camera using an imaging device such as a CCD, and controls exposure with high accuracy even if a low-accuracy external photometric device or a low-accuracy diaphragm mechanism is used. The apparatus comprises a first photometric component for metering the brightness of a subject and outputting a first photometric value, an automatic setting component for automatically setting either an aperture value or a shutter speed, depending on the first photometric value, an imaging device having matrix light receiving elements for effecting photoelectric conversion, and an electronic shutter for controlling charge accumulation time, depending on the set shutter speed. A diaphragm component adjusts a bundle of incident rays on a light receiving surface of the imagining device so a set aperture value will be attained, and a second photometric device effects the preliminary photography at an aperture value and shutter speed set by controlling the electronic shutter and the diaphragm component. The total amount of charge accumulated in all, or a predetermined number, of the light receiving elements of the imagining device are detected, and a second photometric value has an output proportional to the total amount of charge. A shutter speed correcting device is provided for correcting exposure error.
摘要:
A solid state imager has a substrate with a plurality of light receiving areas, with vertical registers to transfer charges accumulated in the light receiving areas either through the vertical registers to a horizontal register section and an output terminal, or to a drain region. The transfer is accomplished by use of externally supplied driving pulses. By use of a high-speed normal-transfer operation, charges which are trapped by potential barriers and/or potential dips, and which would normally appear as noise in the form of black spots or bright spots, can be eliminated prior to the read out if the charge signals via the vertical registers and the horizontal register, whereby the output signal is produced free of such noise.
摘要:
In an electronic still camera provided with a plurality of photosensitive pixels arranged on a two-dimensional plane, and transfer means for transferring charges produced in the photosensitive pixels, there is provided a method of precisely measuring a shutter speed at a relatively low cost. To the solid state image sensor, output terminals of the duplicate system are provided. The first terminal outputs signal charges for forming a pictorial image. The second terminal outputs signal charges for determining an exposure time. For a predetermined time after the shutter is opened, signal charges are output from the second terminal to thereby determine an exposure time. Subsequently, signal charges are output from the first terminal to form a pictorial image. At this time, only for an exposure time determined at the preceeding stage, the shutter is continuously opened to form a pictorial image. By allowing the solid state image sensor to have both the function to form a pictorial image and the function to measure an exposure time, the necessity of additionally providing an exposure meter is eliminated.
摘要:
A solid state imager device having a substrate of a first conductivity type, a charge storage area of a second conductivity type formed on the substrate of the first conductivity type, and a forward electrode formed on the charge storage area of the second conductivity type through an insulating layer, and the forward electrode is alternately supplied with a first voltage for accumulating charges of the first conductivity type on a boundary between the charge storage area of the second conductivity type and the insulating layer and a second voltage so as to extend the depletion layer formed beneath the charge storage area of the second conductivity type.
摘要:
A solid state image sensing device which transfers unnecessary signal charges accumulated at photoelectric conversion devices by a first charge pulse in a vertical blanking period to vertical transferring means and throws out the unnecessary signal charges using throw-away means. The necessary signal charges accumulated in the photoelectric conversion devices in such period after the first charge pulse are transferred by a second charge pulse to the vertical transferring means, a horizontal transferring means and a signal detecting means, thereby to issue a video signal.
摘要:
The present invention relates to CCD area sensors. The object of the invention is to remove the problem which stems from the fact that the charge transfer function of the vertical CCD(6) restricts the performance of the CCD area sensor. According to the CCD area sensor of the present invention, the fundamental feature resides in that the clocked transfer electrode 3(Z to U) of the vertical CCD(6) are driven by dissimilar clock voltages in order to independently transfer the signal charge packets of the whole potential wells of the vertical CCD(6), that the empty potential well is injected from the output terminal of the vertical CCD(6), and that the next empty potential well is injected from said output terminal before the empty potential well that was previously injected before reaches the opposite end of the output terminal of the vertical CCD(6).
摘要:
A solid state image pick-up device in which a light-receiving portion of MOS diode structure for accumulating therein charges corresponding to the intensity of light is formed on a substrate includes discharging means for discharging the accumulated charges into the substrate, and control means for controlling the discharging means in accordance with the exposure time of the solid state image pick-up device.
摘要:
A solid-state imaging apparatus comprises an image sensor having an array of photodiodes, a shift register and a transfer gate for transferring electrons developed in the photodiodes to the shift register in response to a gate control signal applied thereto. An optical unit admits light to the photodiode array during an exposure time in response to a shutter-release pulse. High-frequency clock pulses are supplied to the shift register throughout the exposure time to cause the shift register to purge electrons which have been transferred thereto from the photodiodes bypassing the transfer gate in the absence of the gate control signal. Low-frequency clock pulses are generated immediately following the end of the exposure time and supplied to the shift register to cause it to discharge electrons which have been transferred thereto from the conversion areas through the transfer gate to a utilization circuit.
摘要:
A solid-state area imaging device for generating an output indicative of an intensity distribution of light received at a predetermined plane is so constructed that the undesired charges of light-receiver photodiodes and the undesired charges of a vertical transfer section are drained collectively. This construction realizes a solid-state area imaging device having a high picture element density and capable of ensuring a high resolution and more particularly a high-efficiency solid-state area imaging device having interline transfer CCD means and well suited for use with electronic shutter equipped electronic still picture cameras or variable shutter speed video cameras.