公开(公告)号：US12249997B2

公开(公告)日：2025-03-11

申请号：US17338497

申请日：2021-06-03

Applicant: Intel Corporation

Inventor： Somnath Kundu ,  Hao Luo ,  Brent Carlton

IPC: H03L7/099

Abstract: An apparatus and method are provided to re-configure an existing low-jitter phase locked loop (PLL) circuit for fast start-up during system wake-up. During system start-up, a feed-back path of the PLL is disconnected to independently control the VCO frequency. This independently controlled VCO then injects energy into a resonator (e.g., a crustal oscillator) for its fast start-up. Once a resonance frequency of the resonator is detected and an oscillation builds up in the resonator, a VCO control voltage is stored. The PLL feedback is then restored and the stored VCO control voltage is applied to perform phase-locking operation. Since the PLL control voltage is already set to the desired operating point, the PLL lock time is very small.

公开(公告)号：US12249622B2

公开(公告)日：2025-03-11

申请号：US16713684

申请日：2019-12-13

Applicant: Intel Corporation

Inventor： Tanuj Trivedi ,  Rahul Ramaswamy ,  Jeong Dong Kim ,  Ting Chang ,  Walid M. Hafez ,  Babak Fallahazad ,  Hsu-Yu Chang ,  Nidhi Nidhi

IPC: H01L29/786 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  B82Y40/00

Abstract: Embodiments disclosed herein include nanowire and nanoribbon devices with non-uniform dielectric thicknesses. In an embodiment, the semiconductor device comprises a substrate and a plurality of first semiconductor layers in a vertical stack over the substrate. The first semiconductor layers may have a first spacing. In an embodiment, a first dielectric surrounds each of the first semiconductor layers, and the first dielectric has a first thickness. The semiconductor device may further comprise a plurality of second semiconductor layers in a vertical stack over the substrate, where the second semiconductor layers have a second spacing that is greater than the first spacing. In an embodiment a second dielectric surrounds each of the second semiconductor layers, and the second dielectric has a second thickness that is greater than the first thickness.

公开(公告)号：US12248800B2

公开(公告)日：2025-03-11

申请号：US17561433

申请日：2021-12-23

Applicant: Intel Corporation

Inventor： Gilbert Neiger ,  Rajesh Sankaran ,  Hisham Shafi

IPC: G06F9/455 ,  G06F13/24

Abstract: Embodiments of apparatuses, methods, and systems for virtualization of interprocessor interrupts are disclosed. In an embodiment, an apparatus includes a plurality of processor cores; an interrupt controller register; and logic to, in response to a write from a virtual machine to the interrupt controller register, record an interprocessor interrupt in a first data structure configured by a virtual machine monitor and send a notification of the interprocessor interrupt to at least one of the plurality of processor cores.

公开(公告)号：US12248783B2

公开(公告)日：2025-03-11

申请号：US18369082

申请日：2023-09-15

Applicant: Intel Corporation

Inventor： Stephen T. Palermo ,  Srihari Makineni ,  Shubha Bommalingaiahnapallya ,  Neelam Chandwani ,  Rany T. Elsayed ,  Udayan Mukherjee ,  Lokpraveen Mosur ,  Adwait Purandare

IPC: G06F1/3203 ,  G06F9/30 ,  G06F9/38

Abstract: Methods for frequency scaling for per-core accelerator assignments and associated apparatus. A processor includes a CPU (central processing unit) having multiple cores that can be selectively configured to support frequency scaling and instruction extensions. Under this approach, some cores can be configured to support a selective set of AVX instructions (such as AVX3/5G-ISA instructions) and/or AMX instructions, while other cores are configured to not support these AVX/AMX instructions. In one aspect, the selective AVX/AMX instructions are implemented in one or more ISA extension units that are separate from the main processor core (or otherwise comprises a separate block of circuitry in a processor core) that can be selectively enabled or disabled. This enables cores having the separate unit(s) disabled to consume less power and/or operate at higher frequencies, while supporting the selective AVX/AMX instructions using other cores. These capabilities enhance performance and provides flexibility to handle a variety of applications requiring use of advanced AVX/AMX instructions to support accelerated workloads.

公开(公告)号：US12248570B2

公开(公告)日：2025-03-11

申请号：US17739930

申请日：2022-05-09

Applicant: Intel Corporation

Inventor： Paul Carlson ,  Rahuldeva Ghosh ,  Baiju Patel ,  Zhong Chen

IPC: G06F21/56 ,  G06F3/06 ,  G06F12/0802 ,  G06F21/62 ,  G06F21/75 ,  G06N20/00

Abstract: The present disclosure is directed to systems and methods for detecting side-channel exploit attacks such as Spectre and Meltdown. Performance monitoring circuitry includes first counter circuitry to monitor CPU cache misses and second counter circuitry to monitor DTLB load misses. Upon detecting an excessive number of cache misses and/or load misses, the performance monitoring circuitry transfers the first and second counter circuitry data to control circuitry. The control circuitry determines a CPU cache miss to DTLB load miss ratio for each of a plurality of temporal intervals. The control circuitry the identifies, determines, and/or detects a pattern or trend in the CPU cache miss to DTLB load miss ratio. Upon detecting a deviation from the identified CPU cache miss to DTLB load miss ratio pattern or trend indicative of a potential side-channel exploit attack, the control circuitry generates an output to alert a system user or system administrator.

公开(公告)号：US12248556B2

公开(公告)日：2025-03-11

申请号：US17356116

申请日：2021-06-23

Applicant: Intel Corporation

Inventor： Ilke Demir ,  Carl S. Marshall ,  Satyam Srivastava ,  Steven Gans

IPC: G06F21/00 ,  G06F21/44 ,  G06N3/08

Abstract: An apparatus to facilitate an authenticator-integrated generative adversarial network (GAN) for secure deepfake generation is disclosed. The apparatus includes one or more processors to: generate, by a generative neural network, samples based on feedback received from a discriminator neural network and from an authenticator neural network, the generative neural network aiming to trick the discriminator neural network to identify the generated samples as real content samples; digest, by the authenticator neural network, the real content samples, the generated samples from the generative neural network, and an authentication code; embed, by the authenticator neural network, the authentication code into the generated samples from the generative neural network by contributing to a generator loss provided to the generative neural network; generate, by the generative neural network, content comprising the embedded authentication code; and verify, by the authenticator neural network, the content based on the embedded authentication code.

公开(公告)号：US12248021B2

公开(公告)日：2025-03-11

申请号：US17132683

申请日：2020-12-23

Applicant: Intel Corporation

Inventor： Sean R. Atsatt ,  Ilya K. Ganusov

IPC: G01R31/3177 ,  G01R31/317 ,  G06F15/78 ,  H03K19/17758

Abstract: Systems and methods described herein may relate to data transactions involving a microsector architecture. Control circuitry may organize transactions to and from the microsector architecture to, for example, enable direct addressing transactions as well as batch transactions across multiple microsectors. A data path disposed between programmable logic circuitry of a column of microsectors and a column of row controllers may form a micro-network-on-chip used by a network-on-chip to interface with the programmable logic circuitry.

公开(公告)号：US20250079398A1

公开(公告)日：2025-03-06

申请号：US18460817

申请日：2023-09-05

Applicant: Intel Corporation

Inventor： Sagar Suthram ,  Wilfred Gomes ,  Ravindranath Vithal Mahajan ,  Debendra Mallik ,  Pushkar Sharad Ranade ,  Nitin A. Deshpande ,  Abhishek A. Sharma

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/528 ,  H10B80/00

Abstract: Embodiments of a microelectronic assembly may include a first integrated circuit (IC) die having a first surface, a second surface opposite the first surface, and a third surface orthogonal to the first and second surfaces, the first IC die including conductive traces that are parallel to the first and second surfaces and exposed at the third surface; a second IC die having a fourth surface and including voltage regulator circuitry; and a third IC die having a fifth surface, wherein the third surface of the first IC die is electrically coupled to the fifth surface of the third IC die by first interconnects, the fourth surface of the second IC die is electrically coupled to the fifth surface of the third IC die by second interconnects, and the first IC die is electrically coupled to the second IC die by conductive pathways in the third IC die.

公开(公告)号：US20250079392A1

公开(公告)日：2025-03-06

申请号：US18458621

申请日：2023-08-30

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  Nitin A. Deshpande ,  Mohammad Enamul Kabir ,  Debendra Mallik

IPC: H01L23/00 ,  H01L25/065

Abstract: Hybrid bonding interconnect (HBI) architectures for scalability. Embodiments implement a bonding layer on a semiconductor die that includes a thick oxide layer overlaid with a thin layer of a hermetic material including silicon and at least one of carbon and nitrogen. The conductive bonds of the semiconductor die are placed in the thick oxide layer and exposed at the surface of the hermetic material. Some embodiments implement a non-bonding moisture seal ring (MSR) structure.

公开(公告)号：US20250079300A1

公开(公告)日：2025-03-06

申请号：US18240318

申请日：2023-08-30

Applicant: Intel Corporation

Inventor： Aleksandar ALEKSOV ,  Neelam PRABHU GAUNKAR ,  Henning BRAUNISCH ,  Wenhao LI ,  Feras EID ,  Georgios C. DOGIAMIS

IPC: H01L23/522 ,  H01F1/03 ,  H01F41/16

Abstract: Magnetic inductors for microelectronics packages are provided. Magnetic inductive structures include a magnetic region, a magnetic region base region, and a conductive region that forms a channel within the magnetic region. The magnetic region has a different chemical composition than the base region. Additional structures are provided in which the magnetic region is recessed into a package substrate core. Further inductor structures are provided in which the conductive region includes through-core vias and the conductive region at least partially encircles a portion of a package substrate core. Additionally, methods of manufacture are provided for semiconductor packages that include magnetic inductors.