Abstract:
A method of operating a semiconductor memory device according to an aspect of the present disclosure includes performing a program loop, including a program operation and a program verification operation, in order to store input data in selected memory cells, performing a first error bit check operation for comparing the number of error bits of data not identical with the input data, with the number of correctable error bits, if the number of error bits is equal to or smaller than the number of correctable error bits, performing a second error bit check operation for comparing the number of error bits with the reference number of bits for replacement determination, and if the number of error bits is greater than the reference number of bits for replacement determination, updating failed column address information by adding the column address of a memory cell, having the error bits, to the failed column address information.
Abstract:
The present invention provides methods for identifying the plurality of aptamers that bind to different sites of a target molecule and methods for using the same, for example, in sandwich assays. In particular, the plurality of aptamers binding to different sites of the target molecules is identified from a library of aptamers identified from the same SELEX process.
Abstract:
A memory includes at least one first flag cell configured to store first flag data, at least one second flag cell configured to store second flag data, at least one first sensing node having a voltage level determined by the first flag data of the first flag cell, at least one second sensing having a voltage level determined by the second flag data of the second flag cell, a selection circuit configured to select the first sensing node or the second sensing node in response to a flag address; and a determination circuit having an internal node through which current corresponding to a voltage level of a selected sensing node flows and configured to determine a logic value of flag data corresponding to the selected sensing node among the first and second flag data by using an amount of current flowing through the internal node.
Abstract:
Disclosed is a method for analyzing a light profile of a light source includes driving a light source of one of a plurality of blocks which divide a backlight unit, setting a light analyzing region matched to one light emission region of the light source, dividing the light analyzing region into at least two symmetric regions considering a form of the light emission region and symmetry of the light emission region, and analyzing and storing a light profile of one of the at least two symmetric regions.
Abstract:
A semiconductor device includes a delay locked loop (DLL) configured to generate a DLL clock signal by delaying a reference clock signal in response to a second delay amount tracked using a first delay amount as an initial delay amount, and track the second delay amount again by adjusting the first delay amount in response to a reset signal, and a DLL controller configured to activate the reset signal when the second delay amount deviates from a given range.
Abstract:
Provided is an input device for operating in a three-dimensional space and inputting user instructions. The input device includes a first operation unit that calculates a first rotation angle in a coordinate system independent of the attitude of the device based on the output value of a first sensor, a second operation unit that calculates a second rotation angle in the coordinate system based on the output value of a second sensor, an attitude angle measuring unit that calculates the attitude angle of the input device by combining the first rotation angle and the second rotation angle, and an intensity calculation unit that calculates force intensity in the coordinate system using acceleration of the input device and the attitude angle of the input device obtained in the attitude measuring unit.
Abstract:
A method for dividing a display area for local dimming of LCD is disclosed. The method includes determining an initial number of pixels per data analysis area and a total number of residual pixels, calculating a first residual pixel sum of a current data analysis area using the total number of residual pixels and a second residual pixel sum of a previous data analysis area, determining whether to assign a residual pixel to the current data analysis area using the first residual pixel sum and the total number of data analysis areas, calculating a second residual sum of the current data analysis area whether to assign a residual pixel, and repeating the calculation above until the data analysis area index is a last data analysis area index.
Abstract:
Improved G-rich oligonucleotide (GRO) aptamers specific to nucleolin, a method of preparing the aptamers, and a use of the aptamers for diagnosing and/or treating a nucleolin-associated disease, are provided.
Abstract:
A non-volatile memory device includes a plurality of input pads, a buffer configured to buffer data inputted through the plurality of the input pads in synchronization with a write enable signal, an even latch configured to store a first buffered data outputted from the buffer in response to an even write enable signal, an odd latch configured to store a second buffered data outputted from the buffer in response to an odd write enable signal, and a transfer unit configured to transfer stored data in the even latch and the odd latch to a selected bank of a plane in response to a bank selection signal.
Abstract:
A method for operating a non-volatile memory device includes selecting a word line of a plurality of word lines in response to a program command and an received address, determining whether the selected word line is a word line set among the word lines, performing an erase operation on a second word line group of the word lines in response to a result of the determining, and performing a program operation on the selected word line.