Semiconductor memory device and method of operating the same
    121.
    发明授权
    Semiconductor memory device and method of operating the same 有权
    半导体存储器件及其操作方法

    公开(公告)号:US09037929B2

    公开(公告)日:2015-05-19

    申请号:US13225621

    申请日:2011-09-06

    CPC classification number: G11C16/3459 G06F11/1048 G11C16/0483 G11C16/10

    Abstract: A method of operating a semiconductor memory device according to an aspect of the present disclosure includes performing a program loop, including a program operation and a program verification operation, in order to store input data in selected memory cells, performing a first error bit check operation for comparing the number of error bits of data not identical with the input data, with the number of correctable error bits, if the number of error bits is equal to or smaller than the number of correctable error bits, performing a second error bit check operation for comparing the number of error bits with the reference number of bits for replacement determination, and if the number of error bits is greater than the reference number of bits for replacement determination, updating failed column address information by adding the column address of a memory cell, having the error bits, to the failed column address information.

    Abstract translation: 根据本公开的一个方面的操作半导体存储器件的方法包括执行包括程序操作和程序验证操作的程序循环,以便将输入数据存储在所选择的存储器单元中,执行第一错误位检查操作 用于将与输入数据不同的数据的错误位的数量与可校正错误位的数量进行比较,如果错误位的数量等于或小于可校正错误位的数量,则执行第二错误位检查操作 用于将错误位数与用于替换确定的参考比特数进行比较,并且如果错误位的数量大于用于替换确定的参考比特数,则通过将存储器单元的列地址相加来更新故障列地址信息 具有错误位,失败的列地址信息。

    Memory device and method for operating the same
    123.
    发明授权
    Memory device and method for operating the same 有权
    存储器件及其操作方法

    公开(公告)号:US08750048B2

    公开(公告)日:2014-06-10

    申请号:US13238435

    申请日:2011-09-21

    CPC classification number: G11C11/5642 G11C16/0483 G11C2211/5646

    Abstract: A memory includes at least one first flag cell configured to store first flag data, at least one second flag cell configured to store second flag data, at least one first sensing node having a voltage level determined by the first flag data of the first flag cell, at least one second sensing having a voltage level determined by the second flag data of the second flag cell, a selection circuit configured to select the first sensing node or the second sensing node in response to a flag address; and a determination circuit having an internal node through which current corresponding to a voltage level of a selected sensing node flows and configured to determine a logic value of flag data corresponding to the selected sensing node among the first and second flag data by using an amount of current flowing through the internal node.

    Abstract translation: 存储器包括被配置为存储第一标志数据的至少一个第一标志单元,被配置为存储第二标志数据的至少一个第二标志单元,具有由第一标志单元的第一标志数据确定的电压电平的至少一个第一感测节点 至少一个第二感测具有由第二标志单元的第二标志数据确定的电压电平,选择电路被配置为响应于标志地址选择第一感测节点或第二感测节点; 以及确定电路,其具有内部节点,通过所述内部节点流过与所选择的感测节点的电压电平相对应的电流,并且被配置为通过使用一定数量的第一和第二标志数据来确定与所选择的感测节点对应的标志数据的逻辑值 电流流过内部节点。

    SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME
    125.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME 有权
    半导体器件及其驱动方法

    公开(公告)号:US20140015574A1

    公开(公告)日:2014-01-16

    申请号:US13603539

    申请日:2012-09-05

    Applicant: Jung-Hwan LEE

    Inventor: Jung-Hwan LEE

    CPC classification number: H03L7/0816 H03L7/0814

    Abstract: A semiconductor device includes a delay locked loop (DLL) configured to generate a DLL clock signal by delaying a reference clock signal in response to a second delay amount tracked using a first delay amount as an initial delay amount, and track the second delay amount again by adjusting the first delay amount in response to a reset signal, and a DLL controller configured to activate the reset signal when the second delay amount deviates from a given range.

    Abstract translation: 半导体器件包括延迟锁定环(DLL),其被配置为通过响应于使用第一延迟量跟踪的第二延迟量作为初始延迟量来延迟参考时钟信号来生成DLL时钟信号,并且再次跟踪第二延迟量 通过响应于复位信号调整第一延迟量,以及DLL控制器,被配置为当第二延迟量偏离给定范围时激活复位信号。

    Method and device for inputting force intensity and rotation intensity based on motion sensing
    126.
    发明授权
    Method and device for inputting force intensity and rotation intensity based on motion sensing 有权
    基于运动感应输入力强度和旋转强度的方法和装置

    公开(公告)号:US08619023B2

    公开(公告)日:2013-12-31

    申请号:US12604820

    申请日:2009-10-23

    CPC classification number: G06F3/0346

    Abstract: Provided is an input device for operating in a three-dimensional space and inputting user instructions. The input device includes a first operation unit that calculates a first rotation angle in a coordinate system independent of the attitude of the device based on the output value of a first sensor, a second operation unit that calculates a second rotation angle in the coordinate system based on the output value of a second sensor, an attitude angle measuring unit that calculates the attitude angle of the input device by combining the first rotation angle and the second rotation angle, and an intensity calculation unit that calculates force intensity in the coordinate system using acceleration of the input device and the attitude angle of the input device obtained in the attitude measuring unit.

    Abstract translation: 提供了一种用于在三维空间中操作并输入用户指令的输入装置。 输入装置包括第一操作单元,其基于第一传感器的输出值,计算独立于设备姿态的坐标系中的第一旋转角度,第二操作单元,其以坐标系为基础计算第二旋转角度 在第二传感器的输出值上,姿态角测量单元,其通过组合第一旋转角度和第二旋转角度来计算输入装置的姿态角度;以及强度计算单元,其使用加速度来计算坐标系中的力强度 和姿态测量单元中获得的输入装置的姿态角。

    Method for dividing display area for local dimming, liquid crystal display device using the same, and method for driving the liquid crystal display device
    127.
    发明授权
    Method for dividing display area for local dimming, liquid crystal display device using the same, and method for driving the liquid crystal display device 有权
    用于分割局部调光的显示区域的方法,使用其的液晶显示装置以及用于驱动液晶显示装置的方法

    公开(公告)号:US08570349B2

    公开(公告)日:2013-10-29

    申请号:US12827537

    申请日:2010-06-30

    CPC classification number: G09G3/3426 G09G2320/02 G09G2320/0646 G09G2360/16

    Abstract: A method for dividing a display area for local dimming of LCD is disclosed. The method includes determining an initial number of pixels per data analysis area and a total number of residual pixels, calculating a first residual pixel sum of a current data analysis area using the total number of residual pixels and a second residual pixel sum of a previous data analysis area, determining whether to assign a residual pixel to the current data analysis area using the first residual pixel sum and the total number of data analysis areas, calculating a second residual sum of the current data analysis area whether to assign a residual pixel, and repeating the calculation above until the data analysis area index is a last data analysis area index.

    Abstract translation: 公开了一种用于划分LCD的局部调光显示区域的方法。 该方法包括:确定每个数据分析区域的像素的初始数目和残余像素的总数,使用剩余像素的总数和先前数据的第二残差像素和来计算当前数据分析区域的第一残差像素和 分析区域,使用第一残差像素和数据分析区域的总数确定是否向当前数据分析区域分配残差像素,计算当前数据分析区域是否分配残差像素的第二残差和,以及 重复上述计算直到数据分析区域索引为最后数据分析区域索引。

    Non-volatile memory device and method for operating the same
    129.
    发明授权
    Non-volatile memory device and method for operating the same 失效
    非易失性存储器件及其操作方法

    公开(公告)号:US08456925B2

    公开(公告)日:2013-06-04

    申请号:US12975981

    申请日:2010-12-22

    Applicant: Jung-Hwan Lee

    Inventor: Jung-Hwan Lee

    CPC classification number: G11C7/1042 G11C16/10 G11C16/26 G11C16/32

    Abstract: A non-volatile memory device includes a plurality of input pads, a buffer configured to buffer data inputted through the plurality of the input pads in synchronization with a write enable signal, an even latch configured to store a first buffered data outputted from the buffer in response to an even write enable signal, an odd latch configured to store a second buffered data outputted from the buffer in response to an odd write enable signal, and a transfer unit configured to transfer stored data in the even latch and the odd latch to a selected bank of a plane in response to a bank selection signal.

    Abstract translation: 非易失性存储器件包括多个输入焊盘,缓冲器被配置为与写使能信​​号同步地缓冲通过多个输入焊盘输入的数据;偶数锁存器,被配置为存储从缓冲器输出的第一缓冲数据 响应于偶写入使能信号,奇数锁存器被配置为存储响应于奇数写使能信号从缓冲器输出的第二缓冲数据;以及传送单元,被配置为将偶锁存器和奇锁存器中的存储数据传送到 响应于银行选择信号选择一个平面的银行。

    Non-volatile memory device and method for operating the same
    130.
    发明授权
    Non-volatile memory device and method for operating the same 有权
    非易失性存储器件及其操作方法

    公开(公告)号:US08451665B2

    公开(公告)日:2013-05-28

    申请号:US13232304

    申请日:2011-09-14

    CPC classification number: G11C11/5628 G11C11/5635 G11C16/0483 G11C16/16

    Abstract: A method for operating a non-volatile memory device includes selecting a word line of a plurality of word lines in response to a program command and an received address, determining whether the selected word line is a word line set among the word lines, performing an erase operation on a second word line group of the word lines in response to a result of the determining, and performing a program operation on the selected word line.

    Abstract translation: 用于操作非易失性存储器件的方法包括响应于程序命令和接收到的地址选择多个字线的字线,确定所选择的字线是否是字线中的字线,执行 响应于所述确定的结果对所述字线的第二字线组进行擦除操作,以及对所选择的字线执行编程操作。

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