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    NON-VOLATILE MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
    1.
    发明申请
    NON-VOLATILE MEMORY DEVICE AND METHOD FOR OPERATING THE SAME 有权
    非易失性存储器件及其操作方法

    公开(公告)号：US20120269020A1

    公开(公告)日：2012-10-25

    申请号：US13232304

    申请日：2011-09-14

    申请人： Seong-Je PARK ,  Jung-Hwan Lee ,  Ji-Hwan Kim ,  Myung Cho ,  Beom-Seok Hah

    发明人： Seong-Je PARK ,  Jung-Hwan Lee ,  Ji-Hwan Kim ,  Myung Cho ,  Beom-Seok Hah

    IPC分类号： G11C7/00

    CPC分类号： G11C11/5628 ,  G11C11/5635 ,  G11C16/0483 ,  G11C16/16

    摘要： A method for operating a non-volatile memory device includes selecting a word line of a plurality of word lines in response to a program command and an received address, determining whether the selected word line is a word line set among the word lines, performing an erase operation on a second word line group of the word lines in response to a result of the determining, and performing a program operation on the selected word line.

    摘要翻译： 用于操作非易失性存储器件的方法包括响应于程序命令和接收到的地址选择多个字线的字线，确定所选择的字线是否是字线中的字线，执行 响应于所述确定的结果对所述字线的第二字线组进行擦除操作，以及对所选择的字线执行编程操作。

    Memory device and method for operating the same
    2.
    发明授权
    Memory device and method for operating the same 有权
    存储器件及其操作方法

    公开(公告)号：US08750048B2

    公开(公告)日：2014-06-10

    申请号：US13238435

    申请日：2011-09-21

    申请人： Myung Cho ,  Seong-Je Park ,  Jung-Hwan Lee ,  Ji-Hwan Kim ,  Beom-Seok Hah

    发明人： Myung Cho ,  Seong-Je Park ,  Jung-Hwan Lee ,  Ji-Hwan Kim ,  Beom-Seok Hah

    IPC分类号： G11C16/34 ,  G11C16/28 ,  G11C16/06 ,  G11C16/26

    CPC分类号： G11C11/5642 ,  G11C16/0483 ,  G11C2211/5646

    摘要： A memory includes at least one first flag cell configured to store first flag data, at least one second flag cell configured to store second flag data, at least one first sensing node having a voltage level determined by the first flag data of the first flag cell, at least one second sensing having a voltage level determined by the second flag data of the second flag cell, a selection circuit configured to select the first sensing node or the second sensing node in response to a flag address; and a determination circuit having an internal node through which current corresponding to a voltage level of a selected sensing node flows and configured to determine a logic value of flag data corresponding to the selected sensing node among the first and second flag data by using an amount of current flowing through the internal node.

    摘要翻译： 存储器包括被配置为存储第一标志数据的至少一个第一标志单元，被配置为存储第二标志数据的至少一个第二标志单元，具有由第一标志单元的第一标志数据确定的电压电平的至少一个第一感测节点 至少一个第二感测具有由第二标志单元的第二标志数据确定的电压电平，选择电路被配置为响应于标志地址选择第一感测节点或第二感测节点; 以及确定电路，其具有内部节点，通过所述内部节点流过与所选择的感测节点的电压电平相对应的电流，并且被配置为通过使用一定数量的第一和第二标志数据来确定与所选择的感测节点对应的标志数据的逻辑值 电流流过内部节点。

    Non-volatile memory device and method for operating the same
    3.
    发明授权
    Non-volatile memory device and method for operating the same 有权
    非易失性存储器件及其操作方法

    公开(公告)号：US08451665B2

    公开(公告)日：2013-05-28

    申请号：US13232304

    申请日：2011-09-14

    申请人： Seong-Je Park ,  Jung-Hwan Lee ,  Ji-Hwan Kim ,  Myung Cho ,  Beom-Seok Hah

    发明人： Seong-Je Park ,  Jung-Hwan Lee ,  Ji-Hwan Kim ,  Myung Cho ,  Beom-Seok Hah

    IPC分类号： G11C16/04

    CPC分类号： G11C11/5628 ,  G11C11/5635 ,  G11C16/0483 ,  G11C16/16

    摘要： A method for operating a non-volatile memory device includes selecting a word line of a plurality of word lines in response to a program command and an received address, determining whether the selected word line is a word line set among the word lines, performing an erase operation on a second word line group of the word lines in response to a result of the determining, and performing a program operation on the selected word line.

    摘要翻译： 用于操作非易失性存储器件的方法包括响应于程序命令和接收到的地址选择多个字线的字线，确定所选择的字线是否是字线中的字线，执行 响应于所述确定的结果对所述字线的第二字线组进行擦除操作，以及对所选择的字线执行编程操作。

    MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
    4.
    发明申请
    MEMORY DEVICE AND METHOD FOR OPERATING THE SAME 有权
    存储装置及其操作方法

    公开(公告)号：US20120269010A1

    公开(公告)日：2012-10-25

    申请号：US13238435

    申请日：2011-09-21

    申请人： Myung CHO ,  Seong-Je Park ,  Jung-Hwan Lee ,  Ji-Hwan Kim ,  Beom-Seok Hah

    发明人： Myung CHO ,  Seong-Je Park ,  Jung-Hwan Lee ,  Ji-Hwan Kim ,  Beom-Seok Hah

    IPC分类号： G11C7/06

    CPC分类号： G11C11/5642 ,  G11C16/0483 ,  G11C2211/5646

    摘要： A memory includes at least one first flag cell configured to store first flag data, at least one second flag cell configured to store second flag data, at least one first sensing node having a voltage level determined by the first flag data of the first flag cell, at least one second sensing having a voltage level determined by the second flag data of the second flag cell, a selection circuit configured to select the first sensing node or the second sensing node in response to a flag address; and a determination circuit having an internal node through which current corresponding to a voltage level of a selected sensing node flows and configured to determine a logic value of flag data corresponding to the selected sensing node among the first and second flag data by using an amount of current flowing through the internal node.

    摘要翻译： 存储器包括被配置为存储第一标志数据的至少一个第一标志单元，被配置为存储第二标志数据的至少一个第二标志单元，具有由第一标志单元的第一标志数据确定的电压电平的至少一个第一感测节点 至少一个第二感测具有由第二标志单元的第二标志数据确定的电压电平，选择电路被配置为响应于标志地址选择第一感测节点或第二感测节点; 以及确定电路，其具有内部节点，通过所述内部节点流过与所选择的感测节点的电压电平相对应的电流，并且被配置为通过使用一定数量的第一和第二标志数据来确定与所选择的感测节点对应的标志数据的逻辑值 电流流过内部节点。

    Flash memory device and operating method thereof
    5.
    发明授权
    Flash memory device and operating method thereof 有权
    闪存设备及其操作方法

    公开(公告)号：US08437191B2

    公开(公告)日：2013-05-07

    申请号：US12914091

    申请日：2010-10-28

    申请人： Jung-Hwan Lee ,  Seong-Je Park

    发明人： Jung-Hwan Lee ,  Seong-Je Park

    IPC分类号： G11C11/34

    CPC分类号： G11C16/24 ,  G11C16/26

    摘要： A flash memory device includes a memory cell string including a plurality of memory cells serially coupled to one another between a bit line and a source line, a page buffer configured to perform a precharging operation and a sensing operation with respect to the bit line, and a power supply unit configured to supply a certain supply voltage through the source line before the precharging operation.

    摘要翻译： 闪速存储器件包括存储单元串，包括在位线和源极线之间彼此串联耦合的多个存储单元，配置为执行预充电操作的页缓冲器和相对于位线的感测操作， 电源单元，被配置为在预充电操作之前通过源极线提供一定电源电压。

    SEMICONDUCTOR DEVICES INCLUDING GATE INSULATION LAYERS ON CHANNEL MATERIALS AND METHODS OF FORMING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING GATE INSULATION LAYERS ON CHANNEL MATERIALS AND METHODS OF FORMING THE SAME 有权
    在通道材料上包括门绝缘层的半导体器件及其形成方法

    公开(公告)号：US20160268302A1

    公开(公告)日：2016-09-15

    申请号：US14995845

    申请日：2016-01-14

    申请人： Jung-Hwan Lee ,  Jee-Yong Kim ,  Dae-Seok Byeon

    发明人： Jung-Hwan Lee ,  Jee-Yong Kim ,  Dae-Seok Byeon

    IPC分类号： H01L27/115

    CPC分类号： H01L27/11582 ,  H01L21/28282 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/42352 ,  H01L29/66833

    摘要： Semiconductor devices are provided. A semiconductor device includes a stack of alternating insulation layers and gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a charge storage structure on the channel material, in the channel recess. Moreover, the semiconductor device includes a gate insulation layer on the channel material. The gate insulation layer undercuts a portion of the channel material. Related methods of forming semiconductor devices are also provided.

    摘要翻译： 提供半导体器件。 半导体器件包括交替绝缘层和栅电极的叠层。 半导体器件包括在堆叠中的通道凹槽中的沟道材料。 半导体器件在通道凹槽中包括在沟道材料上的电荷存储结构。 此外，半导体器件在沟道材料上包括栅极绝缘层。 栅极绝缘层将沟道材料的一部分切下。 还提供了形成半导体器件的相关方法。

    Nonvolatile memory cell and method for fabricating the same
    7.
    发明授权
    Nonvolatile memory cell and method for fabricating the same 有权
    非易失性存储单元及其制造方法

    公开(公告)号：US09281202B2

    公开(公告)日：2016-03-08

    申请号：US12604757

    申请日：2009-10-23

    申请人： Tae-Ho Choi ,  Jung-Hwan Lee ,  Heung-Gee Hong ,  Jeong-Ho Cho ,  Min-Wan Choo ,  Il-Seok Han

    发明人： Tae-Ho Choi ,  Jung-Hwan Lee ,  Heung-Gee Hong ,  Jeong-Ho Cho ,  Min-Wan Choo ,  Il-Seok Han

    IPC分类号： H01L29/423 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/788

    CPC分类号： H01L21/28273 ,  H01L29/42324 ,  H01L29/512 ,  H01L29/66825 ,  H01L29/7881

    摘要： A nonvolatile memory cell and a method for fabricating the same can secure stable operational reliability as well as reducing a cell size. The nonvolatile memory cell includes a drain region formed in a substrate, a source region formed in the substrate to be separated from the drain region, a floating gate formed over the substrate between the drain region and the source region, a halo region formed in the substrate in a direction that the drain region is formed, a dielectric layer formed on sidewalls of the floating gate, and a control gate formed over the dielectric layer to overlap with at least one sidewall of the floating gate.

    摘要翻译： 非易失性存储单元及其制造方法可以确保稳定的操作可靠性以及减小单元尺寸。 非易失性存储单元包括形成在衬底中的漏极区，形成在衬底中的与漏极区分离的源极区，在漏极区和源极区之间形成在衬底上的浮置栅， 在形成漏极区域的方向上形成衬底，形成在浮置栅极的侧壁上的电介质层以及形成在电介质层上以与浮动栅极的至少一个侧壁重叠的控制栅极。

    METHOD AND DEVICE FOR INPUTTING FORCE INTENSITY AND ROTATION INTENSITY BASED ON MOTION SENSING
    10.
    发明申请
    METHOD AND DEVICE FOR INPUTTING FORCE INTENSITY AND ROTATION INTENSITY BASED ON MOTION SENSING 有权
    基于运动感应的强度和旋转强度的输入方法与装置

    公开(公告)号：US20100123656A1

    公开(公告)日：2010-05-20

    申请号：US12604820

    申请日：2009-10-23

    申请人： KYU-CHEOL PARK ,  Jung-Hwan Lee ,  Won-Jang Park ,  Byung-Chun Sakong ,  Sang-Bum Kim ,  Woo-Hee Yang

    发明人： KYU-CHEOL PARK ,  Jung-Hwan Lee ,  Won-Jang Park ,  Byung-Chun Sakong ,  Sang-Bum Kim ,  Woo-Hee Yang

    IPC分类号： G09G5/00

    CPC分类号： G06F3/0346

    摘要： Provided is an input device for operating in a three-dimensional space and inputting user instructions. The input device includes a first operation unit that calculates a first rotation angle in a coordinate system independent of the attitude of the device based on the output value of a first sensor, a second operation unit that calculates a second rotation angle in the coordinate system based on the output value of a second sensor, an attitude angle measuring unit that calculates the attitude angle of the input device by combining the first rotation angle and the second rotation angle, and an intensity calculation unit that calculates force intensity in the coordinate system using acceleration of the input device and the attitude angle of the input device obtained in the attitude measuring unit.

    摘要翻译： 提供了一种用于在三维空间中操作并输入用户指令的输入装置。 输入装置包括第一操作单元，其基于第一传感器的输出值，计算独立于设备姿态的坐标系中的第一旋转角度，第二操作单元，其以坐标系为基础计算第二旋转角度 在第二传感器的输出值上，姿态角测量单元，其通过组合第一旋转角度和第二旋转角度来计算输入装置的姿态角度;以及强度计算单元，其使用加速度来计算坐标系中的力强度 和姿态测量单元中获得的输入装置的姿态角。