公开(公告)号：US20130021388A1

公开(公告)日：2013-01-24

申请号：US13554443

申请日：2012-07-20

Applicant: Kyu-hwan Choi ,  Jung-mok Bae ,  Hoon Song ,  Sang-yoon Lee ,  Yoon-sun Choi ,  Eok-su Kim

Inventor： Kyu-hwan Choi ,  Jung-mok Bae ,  Hoon Song ,  Sang-yoon Lee ,  Yoon-sun Choi ,  Eok-su Kim

IPC: G09G5/10 ,  G02B26/02 ,  G09G3/36

CPC classification number: G02B26/005 ,  G02B5/06 ,  G02B27/2214 ,  G09G3/003 ,  G09G3/3406 ,  G09G3/38 ,  H04N13/32

Abstract: A light refraction controlling panel, a 3D-display, and a method of operating a 3D-display are provided. The light refraction controlling panel includes a transparent substrate, a barrier wall on the transparent substrate, first to fourth electrodes on the barrier wall, the first to fourth electrodes being separated from each other, an electro-wetting prism within the barrier wall, the electro-wetting prism being configured to refract incident light to a desired direction, and an isolation layer between the barrier wall and the first to fourth electrodes, and the electro-wetting prism. One electrode of two adjacent electrodes of the first to fourth electrodes is inside an other electrode of the two adjacent electrodes.

Abstract translation: 提供了光折射控制面板，3D显示器和操作3D显示器的方法。 光折射控制面板包括透明基板，透明基板上的阻挡壁，阻挡壁上的第一至第四电极，第一至第四电极彼此分离，阻挡壁内的电润湿棱镜，电气 湿润棱镜被配置为将入射光折射到期望的方向，以及在阻挡壁和第一至第四电极之间的隔离层以及电润湿棱镜。 第一至第四电极的两个相邻电极的一个电极在两个相邻电极的另一个电极内。

公开(公告)号：US20130001554A1

公开(公告)日：2013-01-03

申请号：US13173986

申请日：2011-06-30

Applicant: Jong Won Chung ,  Christopher J. Bettinger ,  Zhenan Bao ,  Do Hwan Kim ,  Bang Lin Lee ,  Jeong il Park ,  Yong Wan Jin ,  Sang Yoon Lee

Inventor： Jong Won Chung ,  Christopher J. Bettinger ,  Zhenan Bao ,  Do Hwan Kim ,  Bang Lin Lee ,  Jeong il Park ,  Yong Wan Jin ,  Sang Yoon Lee

IPC: H01L29/12 ,  H01L21/66 ,  H01L51/30

CPC classification number: H01L51/0558 ,  H01L51/0003 ,  H01L51/0026 ,  H01L51/0541 ,  H01L51/0545

Abstract: An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns.

Abstract translation: 示例性实施例涉及一种制造电气设备阵列的方法，其包括将包括微通道结构的平台附接到基板。 该方法包括将第一和第二溶液注入到微通道结构中以形成至少三个液膜柱，其中第一和第二溶液包括不同的溶剂组成比，并且液柱各自包括不同的溶剂组成比。 该方法还包括将基板分离，从液膜柱移除溶剂以形成薄膜柱，以及沿着薄膜柱的长度方向在不同条件下处理薄膜柱。 从薄膜柱中除去溶剂，并在薄膜柱的长度方向上在不同的条件下处理薄膜柱。

公开(公告)号：US08319300B2

公开(公告)日：2012-11-27

申请号：US12662292

申请日：2010-04-09

Applicant: Jong-Baek Seon ,  Hyun-Jae Kim ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Hyun-Soo Shin ,  Kyung-Bae Park ,  Woong-Hee Jeong ,  Gun-hee Kim ,  Byung-Du Ahn

Inventor： Jong-Baek Seon ,  Hyun-Jae Kim ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Hyun-Soo Shin ,  Kyung-Bae Park ,  Woong-Hee Jeong ,  Gun-hee Kim ,  Byung-Du Ahn

IPC: H01L27/14

CPC classification number: H01L29/7869

Abstract: A solution composition for forming an oxide thin film may include a first compound including zinc, a second compound including indium, and a third compound including magnesium or hafnium, and an electronic device may include an oxide semiconductor including zinc, indium, and magnesium. The zinc and hafnium may be included at an atomic ratio of about 1:0.01 to about 1:1.

Abstract translation: 用于形成氧化物薄膜的溶液组合物可以包括包含锌的第一化合物，包括铟的第二化合物和包含镁或铪的第三化合物，并且电子器件可以包括包含锌，铟和镁的氧化物半导体。 锌和铪可以以约1:0.01至约1:1的原子比包括在内。

公开(公告)号：US08252883B2

公开(公告)日：2012-08-28

申请号：US11907878

申请日：2007-10-18

Applicant: Jong Baek Seon ,  Hyun Dam Jeong ,  Sang Yoon Lee

Inventor： Jong Baek Seon ,  Hyun Dam Jeong ,  Sang Yoon Lee

IPC: C08G77/00 ,  C08G77/20 ,  C08F283/00 ,  C08F283/12

CPC classification number: C08F283/12 ,  C08G61/02 ,  C08J5/18 ,  C08J2351/10 ,  C08J2357/00 ,  H01L51/0094 ,  H01L51/0512 ,  Y02E10/549

Abstract: Disclosed herein is an organosilicon nanocluster, wherein a silicon cluster is substituted with a conductive organic material, a silicon thin film including the same, a thin film transistor including the silicon thin film, a display device including the thin film transistor, and methods of forming the same. The organosilicon nanocluster may more easily and efficiently form a thin film while maintaining electrical characteristics of an amorphous silicon thin film.

Abstract translation: 本发明公开了一种有机硅纳米团簇，其中硅簇被导电有机材料取代，包含硅的硅薄膜，包括硅薄膜的薄膜晶体管，包括薄膜晶体管的显示装置，以及形成方法 一样。 有机硅纳米簇可以更容易且有效地形成薄膜，同时保持非晶硅薄膜的电特性。

公开(公告)号：US08211957B2

公开(公告)日：2012-07-03

申请号：US12588287

申请日：2009-10-09

Applicant: Jong Jin Park ,  Jung Han Shin ,  Sang Yoon Lee

Inventor： Jong Jin Park ,  Jung Han Shin ,  Sang Yoon Lee

IPC: C08K9/04

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  C01B32/17 ,  C08K3/041 ,  C08K9/04 ,  C09D7/70 ,  C09D109/06 ,  C09D129/04 ,  G03F7/0382 ,  Y10S977/746 ,  Y10S977/753 ,  Y10S977/842 ,  Y10T428/24893 ,  Y10T428/24994

Abstract: Disclosed herein are methods of making a negative pattern of carbon nanotubes or a polymerized carbon nanotube composite having an interpenetrating polymer network (IPN) by modifying the surfaces of the carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups and subjecting the surface-modified carbon nanotubes either to a photolithography process or to a heatcuring process. By virtue of the present invention, desired patterns of carbon nanotubes can be easily made on the surfaces of various substrates, and polymerized carbon nanotube composites improved in hardening properties can be made without additional polymers.

Abstract translation: 本文公开了通过用诸如环氧乙烷和酸酐基团的可聚合官能团改性碳纳米管的表面来制备碳纳米管的负型图案或具有互穿聚合物网络（IPN）的聚合碳纳米管复合材料的方法，并对表面改性 碳纳米管到光刻工艺或热固化工艺。 根据本发明，可以容易地在各种基板的表面上形成期望的碳纳米管图案，并且可以在没有附加的聚合物的情况下进行提高硬化性能的聚合碳纳米管复合材料。

公开(公告)号：US20120119239A1

公开(公告)日：2012-05-17

申请号：US13297495

申请日：2011-11-16

Applicant: Sun-kook KIM ,  In-seo KEE ,  Sang-yoon LEE

Inventor： Sun-kook KIM ,  In-seo KEE ,  Sang-yoon LEE

IPC: H01L33/08 ,  H01L33/52

CPC classification number: H01L27/3293 ,  H01L25/048 ,  H01L27/3211 ,  H01L27/322 ,  H01L51/5253 ,  H01L51/5265 ,  H01L51/5281 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An organic light-emitting display device includes a plurality of first and second electrodes which are spaced apart from each other on a substrate, a plurality of light-emitting layers between the first and second electrodes, a flexible thin encapsulation film on the second electrodes, and a color filter on the flexible thin encapsulation film.

Abstract translation: 一种有机发光显示装置，包括在基板上彼此间隔开的多个第一和第二电极，在第一和第二电极之间的多个发光层，在第二电极上的柔性薄封装膜， 和柔性薄膜封装膜上的滤色片。

公开(公告)号：US20120077949A1

公开(公告)日：2012-03-29

申请号：US13200407

申请日：2011-09-23

Applicant: Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

Inventor： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

IPC: C08G79/08 ,  C08G75/32 ,  C08G75/06

CPC classification number: H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

公开(公告)号：US08120029B2

公开(公告)日：2012-02-21

申请号：US12453293

申请日：2009-05-06

Applicant: Kyung-bae Park ,  Myung-kwan Ryu ,  Byung-wook Yoo ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Kyung-bae Park ,  Myung-kwan Ryu ,  Byung-wook Yoo ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/04

CPC classification number: H01L29/78609 ,  H01L29/78618

Abstract: Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be stably driven.

Abstract translation: 公开了一种薄膜晶体管（TFT）。 TFT可以包括通道与源极和漏极之间的中间层。 由于中间层，由于TFT的漏极区域可能发生的增加的截止电流减小。 因此，可以稳定地驱动TFT。

公开(公告)号：US20120025187A1

公开(公告)日：2012-02-02

申请号：US13064428

申请日：2011-03-24

Applicant: Kyung-bae Park ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Sang-yoon Lee ,  Kwang-hee Lee ,  Tae-sang Kim ,  Eok-su Kim ,  Kyoung-seok Son ,  Wan-joo Maeng ,  Joon-seok Park

Inventor： Kyung-bae Park ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Sang-yoon Lee ,  Kwang-hee Lee ,  Tae-sang Kim ,  Eok-su Kim ,  Kyoung-seok Son ,  Wan-joo Maeng ,  Joon-seok Park

IPC: H01L29/786 ,  H01L21/44

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78696

Abstract: Transistors, methods of manufacturing the transistors, and electronic devices including the transistors. The transistor may include an oxide channel layer having a multi-layer structure. The channel layer may include a first layer and a second layer that are sequentially arranged from a gate insulation layer. The first layer may be a conductor, and the second layer may be a semiconductor having a lower electrical conductivity than that of the first layer. The first layer may become a depletion region according to a gate voltage condition.

Abstract translation: 晶体管，制造晶体管的方法以及包括晶体管的电子器件。 晶体管可以包括具有多层结构的氧化物沟道层。 沟道层可以包括从栅极绝缘层顺序排列的第一层和第二层。 第一层可以是导体，第二层可以是具有比第一层低的导电性的半导体。 第一层可以根据栅极电压条件成为耗尽区。

公开(公告)号：US08008426B2

公开(公告)日：2011-08-30

申请号：US12078952

申请日：2008-04-08

Applicant: Eun Kyung Lee ,  Bang Lin Lee ,  Kook Min Han ,  Sang Yoon Lee ,  Eun Jeong Jeong

Inventor： Eun Kyung Lee ,  Bang Lin Lee ,  Kook Min Han ,  Sang Yoon Lee ,  Eun Jeong Jeong

IPC: C08G75/00

CPC classification number: H01L51/0043 ,  C08G61/122 ,  C08G61/123 ,  C08G61/126 ,  H01B1/127 ,  H01L51/0036 ,  H01L51/0069 ,  H01L51/0076 ,  H01L51/0525 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549

Abstract: Example embodiments relate to an organic semiconductor polymer, in which fused thiophenes having liquid crystal properties and aromatic compounds having N-type semiconductor properties are alternately included in the main chain of the polymer, an organic active layer, an organic thin film transistor (OTFT), and an electronic device including the same, and methods of preparing the organic semiconductor polymer, and fabricating the organic active layer, the OTFT and the electronic device using the same. This organic semiconductor polymer has improved organic solvent solubility, processability, and thin film properties, and may impart increased charge mobility and decreased off-state leakage current when applied to the channel layer of the organic thin film transistor.

Abstract translation: 示例性实施方案涉及其中具有液晶性质的熔融噻吩和具有N型半导体性质的芳族化合物的有机半导体聚合物交替包含在聚合物的主链中，有机活性层，有机薄膜晶体管（OTFT） 以及包含该有机半导体聚合物的电子器件以及制备有机半导体聚合物的方法，以及制造有机活性层，OTFT和使用其的电子器件。 该有机半导体聚合物具有改善的有机溶剂溶解性，加工性和薄膜性质，并且当施加到有机薄膜晶体管的沟道层时，可以赋予增加的电荷迁移率和降低的截止状态漏电流。