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公开(公告)号：US09620708B2
公开(公告)日：2017-04-11
申请号：US15177619
申请日：2016-06-09
Applicant: International Business Machines Corporation
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01L43/10 , G11C11/161 , H01F10/14 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F41/32 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).
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公开(公告)号：US20170098762A1
公开(公告)日：2017-04-06
申请号：US15298674
申请日：2016-10-20
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Daniel C. Worledge
CPC classification number: H01L43/10 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A memory device that includes a first magnetic insulating tunnel barrier reference layer present on a first non-magnetic metal electrode, and a free magnetic metal layer present on the first magnetic insulating tunnel barrier reference layer. A second magnetic insulating tunnel barrier reference layer may be present on the free magnetic metal layer, and a second non-magnetic metal electrode may be present on the second magnetic insulating tunnel barrier. The first and second magnetic insulating tunnel barrier reference layers are arranged so that their magnetizations are aligned to be anti-parallel.
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公开(公告)号：US09614144B1
公开(公告)日：2017-04-04
申请号：US14976207
申请日：2015-12-21
Applicant: International Business Machines Corporation
Inventor： Anthony J. Annunziata , Daniel C. Worledge
Abstract: Techniques for forming OTP memory elements with reduced breakdown voltage are provided. In one aspect, a method of forming an OTP MRAM element includes the steps of: creating a substrate having surface topology; and forming the OTP MRAM element on the substrate over the surface topology, wherein the OTP MRAM element comprises a first magnetic metal layer and a second metal magnetic layer separated by a tunnel barrier, and wherein by forming the OTP MRAM element over the surface topology the tunnel barrier has both a first thickness T1 and second thickness T2, wherein T1 is greater than T2. A method of forming a device having both MTP MRAM and OTP MRAM elements is provided, as is an MRAM device.
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公开(公告)号：US20170054072A1
公开(公告)日：2017-02-23
申请号：US15343651
申请日：2016-11-04
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01F10/329 , G11C11/161 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Magnetoresistive random access memory (MRAM) devices include a first magnetic layer. A tunnel barrier layer is formed on the first magnetic layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. A second magnetic layer is formed on the tunnel barrier layer.
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公开(公告)号：US20170033280A1
公开(公告)日：2017-02-02
申请号：US15157467
申请日：2016-05-18
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01F10/329 , G11C11/161 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Magnetoresistive random access memory (MRAM) devices include a first magnetic layer. A tunnel barrier layer is formed on the first magnetic layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. A second magnetic layer is formed on the tunnel barrier layer.
Abstract translation: 磁阻随机存取存储器（MRAM）器件包括第一磁性层。 隧道势垒层形成在第一磁性层上。 隧道势垒包括具有第一厚度的第一区域和具有大于第一厚度的第二厚度的第二区域。 在隧道势垒层上形成第二磁性层。
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Patent Agency Ranking
公开(公告)号：US09515251B2
公开(公告)日：2016-12-06
申请号：US14583997
申请日：2014-12-29
Inventor： Anthony J. Annunziata , Lucian Prejbeanu , Philip L. Trouilloud , Daniel C. Worledge
CPC classification number: H01L43/02 , G01R33/066 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C14/0036 , G11C14/0081 , H01L27/222 , H01L27/226 , H01L27/228 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. A magnetic tunnel junction is formed on the bottom thermal barrier. The magnetic tunnel junction includes a top ferromagnetic layer formed on a tunnel barrier. The tunnel barrier is formed on a bottom ferromagnetic layer. A top thermal barrier is formed on the top ferromagnetic layer. A top contact is formed on the top thermal barrier. The top contact is reduced to a first diameter. The tunnel barrier and the bottom ferromagnetic layer each have a second diameter. The first diameter of the top contact is smaller than the second diameter.
Abstract translation: 提供了用于制造热辅助磁阻随机存取存储器件的机构。 在底部触点上形成底部热障。 在底部热障上形成磁性隧道结。 磁隧道结包括形成在隧道屏障上的顶部铁磁层。 隧道势垒形成在底部铁磁层上。 在顶部铁磁层上形成顶部热障。 在顶部热障上形成顶部接触。 顶部接触件减小到第一个直径。 隧道势垒和底部铁磁层各自具有第二直径。 顶部接触件的第一直径小于第二直径。
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公开(公告)号：US09466785B1
公开(公告)日：2016-10-11
申请号：US14814129
申请日：2015-07-30
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Guohan Hu , Daniel C. Worledge
Abstract: Magnetoresistive random access memory (MRAM) devices and methods for making the same include growing a tunnel barrier layer on a first magnetic layer. A thin layer of non-wetting material is formed on the tunnel barrier layer, such that the non-wetting material forms distinct regions on the tunnel barrier layer. A second magnetic layer is grown on the tunnel barrier layer.
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公开(公告)号：US20160284986A1
公开(公告)日：2016-09-29
申请号：US14744137
申请日：2015-06-19
Applicant: International Business Machines Corporation
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01L43/10 , G11C11/161 , H01F10/14 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F41/32 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).
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公开(公告)号：US20160284984A1
公开(公告)日：2016-09-29
申请号：US15177619
申请日：2016-06-09
Applicant: International Business Machines Corporation
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01L43/10 , G11C11/161 , H01F10/14 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F41/32 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).
Abstract translation: 磁性材料包括在相对的铁层之间的钴层。 铁层包括铁并且是体心立方（BCC），钴层包括钴并且是BCC或非晶体，并且磁性材料具有垂直磁各向异性（PMA）。
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公开(公告)号：US09391266B1
公开(公告)日：2016-07-12
申请号：US14669337
申请日：2015-03-26
Applicant: International Business Machines Corporation
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01L43/10 , G11C11/161 , H01F10/14 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F41/32 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: A magnetic material includes a cobalt layer between opposing iron layers. The iron layers include iron and are body-centered cubic (BCC), the cobalt layer comprises cobalt and is BCC or amorphous, and the magnetic material has a perpendicular magnetic anisotropy (PMA).
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