摘要:
A multi-level high voltage generator according to embodiments of the invention is capable of simultaneously generating high voltages of various levels by using one charge pump. The multi-level high voltage generator includes a charge pump unit, a voltage divider unit, and a pump control unit. The charge pump unit raises an input voltage applied at an input terminal to simultaneously output a number of high voltages having different levels. The voltage divider unit divides the voltages from the charge pump unit. The pump control unit operates according to an enable signal and generates pump control signals in response to a reference voltage, a control clock signal, and a divided voltage from the voltage divider unit. The charge pump unit generates the high voltages and is controlled by the pump control signals from the pump control unit.
摘要:
An electronic appliance is provided including a display unit movably installed along a guide rail, a protection cover which slides between a first position covering the display unit and a second position exposing the display unit, and a connection unit connecting the sliding movement of the protection cover between the first and second positions with the movement of the display unit.
摘要:
The present invention relates to a method for detecting a line-to-line fault location in power network, and more particularly, detecting the line-to-line fault location by direct 3-phase circuit analysis without using a symmetrical component transformation, so even in an unbalanced 3-phase circuit, the line-to-line fault location can be accurately detected. In the method using direct 3-phase circuit analysis of this invention, inverse lemma is used to simplify matrix inversion calculations, thus the line-to-line fault location can be easily and accurately determined even in the case of an unbalanced network without symmetrical component transformation.
摘要:
An automatic document feeder for an image forming apparatus comprising a separation roller for separately carrying a plurality of paper sheets picked by a pickup roller, a feeding roller for carrying the paper sheets, a discharge roller for discharging the scanned paper sheets, and a transmission unit for transmitting a driving force from a driving motor. The transmission unit comprises an internal roller installed on the same axis as the feeding roller, the internal roller having an internal gear, a swing arm rotatably attached to a bracket, the bracket being inserted into the internal roller, and a swing gear rotatably installed on one side of the swing arm, the swing gear being engaged with the internal gear for rotating the internal roller.
摘要:
A flash memory device may include a memory cell array having a plurality of word lines, bit lines, and memory cells. Each memory cell may be arranged at an intersection of a corresponding word line and a corresponding bit line. The device may include a bit line voltage setting circuit for setting a voltage on a bit line of a given memory cell to be programmed to a variable bit line voltage or to a ground voltage. A variable bit line voltage generating circuit may be provided in the flash memory device for generating the variable bit line voltage. To facilitating programming of the device, a bit line voltage of a given memory cell to be programmed may be set based on a supply voltage of the device, so as to maintain a voltage difference based on the set bit line voltage above a given threshold voltage.
摘要:
Disclosed is a nonvolatile semiconductor memory device having a memory cell array by which random access can be performed. The memory cell array structure of the nonvolatile semiconductor memory device having a main memory cell array formed of a plurality of NAND cell strings includes a sub memory cell array having a plurality of NAND cell strings that is provided therein with memory cell transistors. The number of the memory cell transistors in the sub memory cell array is less than that of the memory cell transistors in the NAND cell strings of the main memory cell arrays. The sub memory cell array is operationally connected to main bit lines of the main memory cell array during program and erase operations and is electrically disconnected with the main bit lines during read operation, thereby having a separate read path that is independent from the read path of the main memory cell array.
摘要:
A method for making the Shallow Trench Isolation (STI) of a semiconductor device. An active mask layer is formed on a semiconductor substrate. Then the active mask layer and semiconductor substrate are etched to form a plurality of trenches. Next, an oxide layer is deposited by High Density Plasma Chemical Vapor Deposition (HDP-CVD) over the active mask layer so as to fill the trenches to a thickness greater than the depth of the trenches and less than the sum of the depth and the thickness of the active mask layer. A capping oxide layer is formed over the HDP-CVD oxide layer by means of plasma source of Tetra-Ethyl-Ortho-Silicate (TEOS). Subsequently, the capping oxide layer and HDP-CVD oxide layer are polished so as to expose the active mask layer. Thus, the Idoff characteristics of the transistor and thus the refresh characteristics of DRAM can be improved. Further, in another embodiment of the present invention, the HDP-CVD oxide layer partially fills the trenches, reducing the aspect ratio of the trenches. As a result, subsequent ozone-TEOS USG layer can completely fill the trenches without the formation of voids.
摘要:
A novel fuse structure for a semiconductor integrated circuit device and the method of manufacturing the semiconductor integrated circuit device is disclosed. The fuse structure is comprised of a first interconnection metal layer formed on a semiconductor substrate; an inter-metal dielectric layer formed on the first interconnection metal layer having a via exposing the first interconnection metal layer; a via plug filling up the via; a metal layer for a fuse and a second interconnection metal layer consecutively deposited on the via plug and the inter-metal dielectric layer; and an opening area exposing the metal layer for a fuse is positioned more than twice the thickness of the second interconnection metal layer from the via. With the present invention, a contact failure which can result from a damage to via plug in a subsequent stripping step can be prevented. Also, a passivation layer formed after opening the fuse area prevents a short-circuit between adjacent fuses in a subsequent laser repairing process.
摘要:
A rechargeable battery includes an electrode assembly having a plurality of first electrodes each including a first coated region coated with a first active material and a first uncoated region having a first alignment opening and a second alignment opening, a plurality of second electrodes each including a second coated region coated with a second active material and a second uncoated region having a third alignment opening and a fourth alignment opening, a separator between each first coated region and each second coated region; and a case housing the electrode assembly, wherein the first alignment openings are substantially aligned with each other, the second alignment openings are substantially aligned with each other, the third alignment openings are substantially aligned with each other, and the fourth alignment openings are substantially aligned with each other.
摘要:
A method and apparatus for managing a spam message in a messaging service are disclosed. When a user reports a message determined as a spam message, he may directly select a sharing level of his personal information in order to prevent a leakage of the personal information according to a sharing policy, reports the spam message by transmitting only a hash value of the spam message in order to prevent an increase in traffic. With respect to reported spam messages, a user can access a spam server to check an errononeously reported message through a sorting algorithm.