公开(公告)号：US20120280310A1

公开(公告)日：2012-11-08

申请号：US13456261

申请日：2012-04-26

申请人： Seung-Uk HAN ,  Satoru Yamada

发明人： Seung-Uk HAN ,  Satoru Yamada

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/4236 ,  H01L21/2652 ,  H01L21/2658 ,  H01L21/76224 ,  H01L29/66621

摘要： A semiconductor device including an isolation layer structure including a doped polysilicon layer pattern doped with first and second impurities of first and second conductivity types at lower and upper portions thereof, the doped polysilicon layer pattern being on an inner wall of a first trench on a substrate including an active region in which the first trench is not formed and a field region including the first trench, and an insulation structure filling a remaining portion of the first trench; a gate structure on the active region; a well region at a portion of the active region adjacent to lower portions of the doped polysilicon layer pattern and being doped with third impurities of the second conductivity type; and a source/drain at a portion of the active region adjacent to upper portions of the doped polysilicon layer pattern and being doped with fourth impurities of the first conductivity type.

摘要翻译： 一种包括隔离层结构的半导体器件，所述隔离层结构包括在其下部和上部掺杂有第一和第二导电类型的第一和第二杂质的掺杂多晶硅层图案，所述掺杂多晶硅层图案位于衬底上的第一沟槽的内壁上 包括不形成第一沟槽的有源区和包括第一沟槽的场区，以及填充第一沟槽的剩余部分的绝缘结构; 活动区域上的栅极结构; 在有源区的与掺杂多晶硅层图案的下部相邻并且掺杂有第二导电类型的第三杂质的部分的阱区; 以及在有源区的与掺杂多晶硅层图案的上部相邻并且掺杂有第一导电类型的第四杂质的部分处的源极/漏极。

公开(公告)号：US20110108962A1

公开(公告)日：2011-05-12

申请号：US12897095

申请日：2010-10-04

申请人： Seunguk Han ,  Satoru Yamada ,  Young Jin Choi

发明人： Seunguk Han ,  Satoru Yamada ,  Young Jin Choi

IPC分类号： H01L23/00

CPC分类号： H01L21/823481 ,  H01L21/76229 ,  H01L21/823425

摘要： An example semiconductor device includes a trench formed in a semiconductor substrate to define an active region, a filling dielectric layer provided within the trench, an oxide layer provided between the filling dielectric layer and the trench, a nitride layer provided between the oxide layer and the filling dielectric layer, and a barrier layer provided between the oxide layer and the nitride layer.

摘要翻译： 示例性半导体器件包括形成在半导体衬底中以限定有源区的沟槽，设置在沟槽内的填充介电层，设置在填充介电层和沟槽之间的氧化物层，设置在氧化物层和 填充介电层，以及设置在氧化物层和氮化物层之间的阻挡层。

公开(公告)号：US07835024B2

公开(公告)日：2010-11-16

申请号：US11527593

申请日：2006-09-27

申请人： Satoru Yamada

发明人： Satoru Yamada

IPC分类号： G06F15/00 ,  G06F15/16

CPC分类号： G06F21/6209 ,  G06F3/1296 ,  G06F21/608 ,  G06F2221/2153

摘要： A print information processing apparatus for performing a printing process is disclosed. The print information processing apparatus is connected to a printer via a network and includes an interface configured to connect a removable recording medium; a data storage unit configured to store encrypted data; a decryption unit configured to read decryption information used to decrypt the encrypted data from the removable recording medium connected to the interface and to decrypt the encrypted data by using the decryption information. In the print information processing apparatus, the decryption unit permits the printing process of the encrypted data only when the removable recording medium is connected to the interface.

摘要翻译： 公开了一种用于执行打印处理的打印信息处理设备。 打印信息处理设备经由网络连接到打印机，并且包括被配置为连接可移动记录介质的接口; 配置为存储加密数据的数据存储单元; 解密单元，被配置为从连接到所述接口的可移动记录介质读取用于解密所述加密数据的解密信息，并且通过使用所述解密信息来解密所述加密数据。 在打印信息处理装置中，只有当可移动记录介质连接到界面时，解密单元允许加密数据的打印处理。

公开(公告)号：US20090137755A1

公开(公告)日：2009-05-28

申请号：US12158216

申请日：2006-12-19

申请人： Satoru Yamada ,  Kei Inamoti ,  Yasutake Wakabayashi ,  Shigehiko Abe ,  Morihiko Sato ,  Masao Tanabiki ,  Satoshi Hamura ,  Ryuji Ikeda

发明人： Satoru Yamada ,  Kei Inamoti ,  Yasutake Wakabayashi ,  Shigehiko Abe ,  Morihiko Sato ,  Masao Tanabiki ,  Satoshi Hamura ,  Ryuji Ikeda

IPC分类号： C08F4/76 ,  C08F110/02 ,  B01J21/16

CPC分类号： C08F210/16 ,  C08F4/65912 ,  C08F4/65916 ,  C08F4/65927 ,  C08F10/00 ,  C08F110/02 ,  C08F4/65904 ,  C08F2500/12 ,  C08F2500/11 ,  C08F2500/20 ,  C08F2500/18 ,  C08F210/08 ,  C08F2500/09

摘要： An object of the present invention relates to provide an ethylene polymer having excellent mechanical strength and excellent molding processability in a wide molding processing temperature range. The invention relates to use an ethylene polymer comprising a repeating unit derived from ethylene, or a repeating unit derived from ethylene and a repeating unit derived from a C3-8 α-olefin, the ethylene polymer being satisfied with the following (A) to (F). (A) Density (d(kg/m3)) is from 910 to 970, (B) MFR(g/10 min)) is from 0.01 to 50, (C) terminal vinyl number is 0.2 or less per 1,000 carbon atoms, (D) melt strength (MS160 (mN)) measured at 160° C. and MFR are satisfied with MS160>90−130×log(MFR), (E) melt strength (MS190(mN)) measured at 190° C. and MS160 are satisfied with MS160/MS190

摘要翻译： 本发明的目的在于提供一种在宽的成型加工温度范围内具有优异的机械强度和优异的成型加工性能的乙烯聚合物。 本发明涉及使用乙烯聚合物，其包含衍生自乙烯的重复单元或衍生自乙烯的重复单元和衍生自C3-8α-烯烃的重复单元，所述乙烯聚合物满足以下（A）至（ F）。 （A）密度（d（kg / m3））为91​​0〜970，（B）MFR（g / 10min））为0.01〜50，（C）末端乙烯基数为每1000个碳原子数为0.2以下， （D）在160℃下测量的熔体强度（MS160（mN））和MFR在190℃下测得的MS160> 90-130xlog（MFR），（E）熔体强度（MS190（mN））和MS160 满足MS160 / MS190 <1.8，和（F）流化活化能（Ea（kJ / mol））和d满足127-0.107 d

公开(公告)号：US07414291B2

公开(公告)日：2008-08-19

申请号：US11099511

申请日：2005-04-06

申请人： Shigetomi Michimata ,  Ryo Nagai ,  Satoru Yamada ,  Yoshitaka Nakamura ,  Ryoichi Nakamura

发明人： Shigetomi Michimata ,  Ryo Nagai ,  Satoru Yamada ,  Yoshitaka Nakamura ,  Ryoichi Nakamura

IPC分类号： H01L29/72

CPC分类号： H01L21/28518 ,  H01L21/743 ,  H01L21/76805 ,  H01L21/76814 ,  H01L29/78

摘要： A method includes the steps of: implanting boron into a surface region of a silicon substrate to form a p+ diffused region; implanting indium into the surface of the p+ diffused region, to form an indium-implanted layer; forming a contact metal layer on the indium-implanted layer; and reacting silicon in the silicon substrate including the indium-implanted layer with metal in the contact metal layer to form a titanium silicide layer.

摘要翻译： 一种方法包括以下步骤：将硼注入到硅衬底的表面区域中以形成p + +扩散区; 将铟注入到扩散区域的表面中以形成铟注入层; 在铟注入层上形成接触金属层; 并且在包含铟注入层的硅衬底中的硅与金属在接触金属层中反应以形成硅化钛层。

公开(公告)号：US20080193858A1

公开(公告)日：2008-08-14

申请号：US12028499

申请日：2008-02-08

申请人： Hiroyuki SUZUKI ,  Satoru Yamada

发明人： Hiroyuki SUZUKI ,  Satoru Yamada

IPC分类号： G03F1/14 ,  C07C69/76 ,  G03F7/004

CPC分类号： C07C69/78 ,  C07C69/54 ,  C07C69/76 ,  C07C233/20 ,  C07C233/49 ,  C07C309/66 ,  C07C309/73 ,  C07C323/22 ,  C07D303/18 ,  C07D305/06 ,  G03F7/001 ,  G03F7/027 ,  G03F7/038

摘要： The present invention provides a polymerizable compound denoted by general formula (1). In general formula (1), A denotes an oxygen atom, sulfur atom, or NR, R denotes a hydrogen atom, alkyl group, aryl group, or heterocyclic group, X denotes a hydrogen atom, polymerizable group, optionally polymerizable group-substituted alkyl group or the like, B and C each independently denote a hydrogen atom, halogen atom, polymerizable group, optionally polymerizable group-substituted alkyl group or the like, wherein at least one from among B and C denotes a hydrogen atom and at least one from among X, Y, and Z comprises a polymerizable group, m denotes an integer ranging from 0 to 5, n denotes an integer ranging from 0 to 2, and Q denotes an elimination group.

摘要翻译： 本发明提供由通式（1）表示的可聚合化合物。 在通式（1）中，A表示氧原子，硫原子或NR，R表示氢原子，烷基，芳基或杂环基，X表示氢原子，可聚合基团，任选地可聚合基团取代的烷基 基团等，B和C各自独立地表示氢原子，卤素原子，可聚合基团，任选可聚合基团取代的烷基等，其中B和C中的至少一个表示氢原子，并且至少一个来自 在X，Y和Z中包含聚合性基团，m表示0〜5的整数，n表示0〜2的整数，Q表示消去基。

公开(公告)号：US07368908B2

公开(公告)日：2008-05-06

申请号：US11460110

申请日：2006-07-26

申请人： Satoru Yamada

发明人： Satoru Yamada

IPC分类号： G01R33/02

CPC分类号： H01F17/0033 ,  H01F17/045 ,  H01F27/2847 ,  H01F27/306 ,  H01F2017/0066

摘要： A magnetic element in a flat-plate shape includes a linearly-extending first flat plate being made of one of a magnetic material and a conductive material and a helical second flat plate being made of the other of the magnetic material and the conductive material, and the first flat plate is inserted into the helical structure of the second flat plate so as to alternatively weave front and back surfaces of the second flat plate.

摘要翻译： 平板形状的磁性元件包括由磁性材料和导电材料中的一种制成的直线延伸的第一平板和由磁性材料和导电材料中的另一个制成的螺旋形第二平板，以及 将第一平板插入到第二平板的螺旋结构中，以交替地编织第二平板的前表面和后表面。

公开(公告)号：US07301011B2

公开(公告)日：2007-11-27

申请号：US11476611

申请日：2006-06-29

申请人： Satoru Yamada

发明人： Satoru Yamada

IPC分类号： C09B44/16

CPC分类号： C07D401/12 ,  C07D401/14

摘要： An azo compound and tautomer thereof represented by the following formula (1) or the formula (2): wherein R1, R2, R5, R7, R8, R10, R11, R14, R16, R17, R18, and R19 each independently represents a hydrogen atom, alkyl group, aryl group, alkoxy group, aryloxy group, alkylsulfonyl group, arylsulfonyl group, alkylthio group, arylthio group, cyano group, acyl group, carbamoyl group, amino group, nitro group, or halogen atom; R3, R4, R6, R9, R12, R13, R15, and R20 each independently represents a hydrogen atom, alkyl group, or aryl group; R1 and R2, R2 and R3, R3 and R4, R6 and R7, R7 and R8, R8 and R9, R10 and R11, R11 and R12, R12 and R13, R15 and R16, R16 and R17, R17 and R18, R18 and R19, and R19 and R20 may join to each other to form a ring structure, and A− represents a counter anion.

摘要翻译： 由下式（1）或式（2）表示的偶氮化合物及其互变异构体：其中R 1，R 2，R 5， R 7，R 8，R 10，R 11，R 14，R 14， >，R 16，R 17，R 18和R 19各自独立地表示氢原子，烷基 芳基，烷氧基，芳氧基，烷基磺酰基，芳基磺酰基，烷硫基，芳硫基，氰基，酰基，氨基甲酰基，氨基，硝基或卤素原子; R 3，R 4，R 6，R 9，R 12， R 15，R 15和R 20各自独立地表示氢原子，烷基或芳基; R 1和R 2，R 2和R 3，R 3和R 3，和 R 4，R 6和R 7，R 7和R 8， R 8和R 9，R 10和R 11，R 11和R 11和 R 12，R 12和R 13，R 15和R 16， R 16和R 17，R 17和R 18，R 18和R 18和 R 19和R 19和R 20可以彼此连接以形成环结构，并且A 0〜 >表示抗衡阴离子。

公开(公告)号：US20070238026A1

公开(公告)日：2007-10-11

申请号：US11727964

申请日：2007-03-29

申请人： Satoru Yamada ,  Kazunori Nigorikawa

发明人： Satoru Yamada ,  Kazunori Nigorikawa

IPC分类号： G03H1/04

CPC分类号： G11B7/0065 ,  G03H1/02 ,  G03H2001/0264 ,  G03H2260/12 ,  G11B7/24044 ,  G11B7/2405 ,  G11B7/245 ,  G11B7/246 ,  G11B7/26

摘要： Provided is a holographic recording composition that comprises a monomer expressed by the Structural Formula (1) below: in the Structural Formula (1) shown above, X1 represents a hydrogen atom or a methyl group; Y1 represents an oxygen atom or NR10 (R10 represents a hydrogen atom or an alkyl group); L1 represents a divalent organic connecting group; n1 is an integer of 0 or 1; R1 to R9 may be identical or different each other and each represents a hydrogen atom, halogen atom, alkyl group, aryl group, heterocyclic group, alkoxy group, aryloxy group, alkoxycarbonyl group, aryloxycarbonyl group, carbamoyl group, sulfamoyl group, amino group, acyloxy group, acylamino group, hydroxyl group, carbonic acid group, sulfonic acid group, or a group expressed by the Structural Formula (1-1) below; R1 to R9 may be further substituted by a substituent; R1 and R2, R3 and R4, R4 and R5, R5 and R6, R6 and R7, or R8 and R9 may form a ring structure together with at least an adjacent carbon atom;

摘要翻译： 提供一种全息记录组合物，其包含由下述结构式（1）表示的单体：在上述结构式（1）中，X 1表示氢原子或甲基; Y 1表示氧原子或NR 10（R 10表示氢原子或烷基）; L 1表示二价有机连接基团; n 1是0或1的整数; R 1至R 9可彼此相同或不同，并且各自表示氢原子，卤素原子，烷基，芳基，杂环基，烷氧基，芳氧基 ，烷氧基羰基，芳氧基羰基，氨基甲酰基，氨磺酰基，氨基，酰氧基，酰氨基，羟基，碳酸基，磺酸基或下述结构式（1-1）表示的基团。 R 1至R 9可以进一步被取代基取代; R 1和R 2，R 3和R 4，R 4和R 4和 R 5，R 5和R 6，R 6和R 7， 或R 8和R 9可以与至少相邻的碳原子一起形成环结构;

公开(公告)号：US07154748B2

公开(公告)日：2006-12-26

申请号：US10767495

申请日：2004-01-28

申请人： Satoru Yamada

发明人： Satoru Yamada

IPC分类号： H05K7/20 ,  G06F1/20

CPC分类号： H05K7/20572

摘要： A cooling structure of an electronic equipment includes substrate housing parts, an upstream side duct, a downstream side duct, an exhaust device and an air adjusting part. The substrate housing parts detachably house therein one or plurality of substrate units, and the downstream side duct allows the cooling air, which passed from the upstream side duct though the substrate housing part, to flow. The exhaust device is provided at an exhaust part to forcibly discharge air to the outside, thereby allowing the cooling air to flow to the substrate housing parts. The air adjusting part adjusts the volume for cooling air which flows to the downstream side duct.

摘要翻译： 电子设备的冷却结构包括基板壳体部件，上游侧管道，下游侧管道，排气装置和空气调节部件。 基板壳体部件可拆卸地容纳在其中的一个或多个基板单元，并且下游侧管道允许从上游侧管道通过基板壳体部分流过的冷却空气流动。 排气装置设置在排气部分，以强制地将空气排出到外部，从而允许冷却空气流到基板壳体部分。 空气调节部调节流向下游侧导管的冷却空气的体积。