Monitoring of fuel vapor pressure
    121.
    发明授权
    Monitoring of fuel vapor pressure 有权
    监测燃油蒸汽压力

    公开(公告)号:US06886398B2

    公开(公告)日:2005-05-03

    申请号:US10642622

    申请日:2003-08-19

    IPC分类号: F02M25/08 G01M15/00

    CPC分类号: F02M25/0818

    摘要: Fuel vapor in a fuel tank (1) is purged into an intake passage (8) of an engine (10) through a purge vent (2, 4, 6). The controller (21) determines whether a leak is present in a purge vent from the fuel tank (1) to a purge control valve (11). The determination process comprises a pull-down process in which a pressure in the purge vent is reduced using a negative pressure in the intake passage (8) and a leak-down process of sealing the purge vent at the reduced pressure and monitoring the pressure variation. The controller (21) calculates an error equivalence amount (DVPII), a pressure component corresponding to sloshing in the fuel tank (1) during the leak-down process, and determines the presence of a leak in a highly accurate manner based a corrected pressure (DVP5A) in which the monitored pressure variation is corrected using the error equivalence amount (DVPII) (S22).

    摘要翻译: 燃料箱(1)中的燃料蒸汽通过排气口(2,4,6)被清除到发动机(10)的进气通道(8)中。 控制器(21)确定从燃料箱(1)到净化控制阀(11)的排气口中是否存在泄漏。 确定过程包括下拉过程,其中在进气通道(8)中使用负压使排气口中的压力减小,以及在减压下密封排气口的泄漏过程并监测压力变化 。 控制器(21)计算误差当量(DVPII),在泄漏处理期间对应于燃料箱(1)中的晃动的压力分量,并且基于校正压力高精度地确定泄漏的存在 (DVP5A),其中使用误差当量量(DVPII)校正所监视的压力变化(S22)。

    Variable capacitance element
    122.
    发明申请
    Variable capacitance element 失效
    可变电容元件

    公开(公告)号:US20050052821A1

    公开(公告)日:2005-03-10

    申请号:US10948718

    申请日:2004-09-24

    IPC分类号: H01H59/00 H01P1/12 H01G5/16

    摘要: A variable capacitance element includes a coplanar line or signal conduction and a movable body, which are vertically displaced through a supporting bar and which are provided on a substrate. A movable electrode is provided between a first driving electrode and second and third driving electrodes which are movable electrodes. Voltage is applied between the movable electrodes, such that one of the movable electrodes is pressed against the coplanar line through a dielectric film. Thus, high frequency signals conducting through the coplanar line are shut off. When voltage is applied between the other electrodes, the movable electrode and the dielectric film are moved apart from the coplanar line. Thus, high frequency signals are conducted through the coplanar line.

    摘要翻译: 可变电容元件包括共面线或信号传导和可移动体,其通过支撑杆垂直移位并设置在基板上。 可动电极设置在作为可动电极的第一驱动电极和第二和第三驱动电极之间。 电压施加在可动电极之间,使得一个可动电极通过电介质膜压在共面线上。 因此,通过共面线路传导的高频信号被切断。 当在其他电极之间施加电压时,可动电极和电介质膜离开共面线。 因此,高频信号通过共面线传导。

    Liquid chromatograph with fraction collector
    123.
    发明授权
    Liquid chromatograph with fraction collector 有权
    带馏分收集器的液相色谱仪

    公开(公告)号:US06280627B1

    公开(公告)日:2001-08-28

    申请号:US09473254

    申请日:1999-12-27

    申请人: Masato Kobayashi

    发明人: Masato Kobayashi

    IPC分类号: B01D1508

    摘要: A fraction collecting device for a liquid chromatograph has a splitter disposed downstream to a chromatographic column and serving to split the flow from the column into two flow routes individually connected to a mass analyzer serving as a detector and a fraction collector. A plurality of pipes each having a different flow resistance and being connected in parallel with respect to one other are inserted in either of these two flow routes. A control unit serves to select one of these pipes according to inputted parameters indicating the conditions of liquid chromatography to be carried out and controls valves so as to connect this selected one of the pipes to the column through the splitter.

    摘要翻译: 用于液相色谱仪的级分收集装置具有分配器,其设置在色谱柱的下游,用于将来自色谱柱的流分离成两个流路,分别连接到用作检测器和馏分收集器的质量分析器。 在这两条流路中的任一条中插入有各自具有不同流阻的并且相互并联连接的多个管。 控制单元用于根据输入的参数来选择这些管道中的一个,所述参数指示要执行的液相色谱的条件,并且控制阀,以通过分离器将所选择的一个管道连接到列。

    Fault determining device for torque transmission state sensor, and
engine misfiring diagnosis device
    126.
    发明授权
    Fault determining device for torque transmission state sensor, and engine misfiring diagnosis device 失效
    扭矩传递状态传感器故障判定装置,发动机失火诊断装置

    公开(公告)号:US06055469A

    公开(公告)日:2000-04-25

    申请号:US886003

    申请日:1997-07-03

    CPC分类号: G05B9/02

    摘要: A sensor which detects whether or not an engine output shaft and a vehicle drive shaft are in a predetermined connection state, is subjected to a fault determination when a predetermined condition holds. When the engine output shaft and vehicle drive shaft are constantly in this connection state from when the engine starts to when the above condition comes to hold, it is determined that a fault has occurred in the sensor. It is also determined whether or not the vehicle is running when the engine starts, and when the vehicle is running when the engine starts, fault determination is prohibited so as to avoid incorrect results.

    摘要翻译: 检测发动机输出轴和车辆驱动轴是否处于预定连接状态的传感器在预定条件成立时经受故障判定。 当发动机输出轴和车辆驱动轴在从发动机起动到上述状态保持时始终处于连接状态时,确定传感器发生故障。 还确定发动机起动时车辆是否运行,当发动机起动时车辆行驶时,禁止故障判定,以避免不正确的结果。

    Low temperature system and method for CVD copper removal
    128.
    发明授权
    Low temperature system and method for CVD copper removal 失效
    低温系统和CVD铜去除方法

    公开(公告)号:US5897379A

    公开(公告)日:1999-04-27

    申请号:US995112

    申请日:1997-12-19

    摘要: A method of using diluted nitric acid and an edge bead removal tool to remove copper from the perimeter of a semiconductor wafer is provided. In one embodiment, sensitive areas of the wafer are covered with photoresist, and the wafer perimeter cleared of photoresist, before the acid is applied. In another embodiment, sensitive areas of the wafer are protected with water spray as the copper etchant is applied. In a third embodiment, the nitric acid is applied to clear the wafer perimeter of copper before a chemical mechanical polishing (CMP) is performed on the layer of deposited copper. The excess thickness of copper protects copper interconnection structures from reacting with the copper etchant. All these methods permit copper to be removed at a low enough temperature that copper oxides are not formed. A semiconductor wafer cleaned of copper in accordance with the above-described method, and a system for low temperature copper removal is also provided.

    摘要翻译: 提供了使用稀硝酸和边缘珠除去工具从半导体晶片的周边去除铜的方法。 在一个实施例中,在施加酸之前,晶片的敏感区域被光致抗蚀剂覆盖,并且晶片外围的光致抗蚀剂被清除。 在另一个实施例中,当施加铜蚀刻剂时,晶片的敏感区域被水喷雾保护。 在第三实施例中,在对沉积的铜层进行化学机械抛光(CMP)之前,施加硝酸以清除铜的晶片周边。 铜的过剩厚度保护铜互连结构不与铜蚀刻剂反应。 所有这些方法允许铜在没有形成铜氧化物的足够低的温度下被去除。 还提供了根据上述方法清洁铜的半导体晶片和用于低温铜去除的系统。

    Method of using water vapor to increase the conductivity of cooper
desposited with cu(hfac)TMVS
    130.
    发明授权
    Method of using water vapor to increase the conductivity of cooper desposited with cu(hfac)TMVS 失效
    使用水蒸气增加铜(hfac)TMVS沉积铜的电导率的方法

    公开(公告)号:US5744192A

    公开(公告)日:1998-04-28

    申请号:US745562

    申请日:1996-11-08

    摘要: A method of blending water vapor with volatile Cu(hfac)TMVS (copper hexafluoroacetylacetonate trimethylvinylsilane) is provided which improves the deposition rate of Cu, without degrading the resistivity of the Cu deposited upon an integrated circuit surface. The method of the present invention uses a relatively small amount of water vapor, approximately 0.3 to 3% of the total pressure of the system in which chemical vapor deposition (CVD) Cu is applied. The method specifies the flow rates of the liquid precursor, carrier gas, and liquid water. The method also specifies the pressures of the vaporized precursor, vaporized precursor blend including carrier gas and water vapor. In addition, the temperatures of the vaporizers, chamber walls, and IC surfaces are disclosed. A Cu precursor blend is also provided comprising vaporized Cu(hfac)TMVS and water vapor. The ratio of water vapor pressure to vaporized precursor is approximately 0.5 to 5%. Further, an IC surface covered with Cu applied with a Cu precursor blend including vaporized Cu(hfac)TMVS and water vapor, with the above mentioned ratio of water vapor pressure to volatile Cu(hfac)TMVS pressure, is provided.

    摘要翻译: 提供了将水蒸汽与挥发性Cu(hfac)TMVS(六氟乙酰丙酮酸铜三甲基乙烯基硅烷)共混的方法,其改善了Cu的沉积速率,而不降低沉积在集成电路表面上的Cu的电阻率。 本发明的方法使用相对少量的水蒸气,其中施加化学气相沉积(CVD)Cu的系统的总压力的大约0.3至3%。 该方法规定了液体前体,载气和液态水的流量。 该方法还规定了蒸发的前体,蒸发的前体共混物包括载气和水蒸气的压力。 此外,公开了蒸发器,室壁和IC表面的温度。 还提供了包含蒸发的Cu(hfac)TMVS和水蒸气的Cu前体共混物。 水蒸气压与汽化前体的比率约为0.5〜5%。 此外,提供了用Cu涂覆Cu包含蒸发的Cu(hfac)TMVS和水蒸气的Cu前体共混物的IC表面,具有上述的水蒸气压与挥发性Cu(hfac)TMVS压力的比率。