公开(公告)号：US20250040158A1

公开(公告)日：2025-01-30

申请号：US18233899

申请日：2023-08-15

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Bin-Siang Tsai ,  Fu-Yu Tsai ,  Chung-Yi Chiu

IPC: H10K10/10

Abstract: A metal-insulator-metal capacitor includes a bottom electrode, a dielectric layer, a superlattice layer, a silicon dioxide layer and a top electrode stacked from bottom to top. The superlattice layer contacts the dielectric layer. A silicon dioxide layer has a negative voltage coefficient of capacitance.

公开(公告)号：US20250038103A1

公开(公告)日：2025-01-30

申请号：US18233877

申请日：2023-08-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Bin-Siang Tsai ,  Fu-Yu Tsai ,  Chung-Yi Chiu

IPC: H01L23/522 ,  H01L23/36 ,  H01L23/528

Abstract: A structure of an MIM capacitor and a heat sink include a dielectric layer. The dielectric layer includes a capacitor region and a heat dispensing region. A bottom electrode is embedded in the dielectric layer. A first heat conductive layer covers the dielectric layer. A capacitor dielectric layer is disposed on the first heat conductive layer within the capacitor region. A second heat conductive layer covers and contacts the capacitor dielectric layer and the first heat conductive layer. A top electrode is disposed within the capacitor region and the heat dispensing region and covers the second heat conductive layer. A first heat sink is disposed within the heat dispensing region and contacts the top electrode. A second heat sink is disposed within the heat dispensing region and contacts the first heat conductive layer and the second heat conductive layer.

公开(公告)号：US12127413B2

公开(公告)日：2024-10-22

申请号：US18113070

申请日：2023-02-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kun-Ju Li ,  Tai-Cheng Hou ,  Hsin-Jung Liu ,  Fu-Yu Tsai ,  Bin-Siang Tsai ,  Chau-Chung Hou ,  Yu-Lung Shih ,  Ang Chan ,  Chih-Yueh Li ,  Chun-Tsen Lu

IPC: H10B61/00 ,  G11C11/16 ,  H01F10/32 ,  H01F41/34 ,  H10N50/01 ,  H10N50/80

CPC classification number: H10B61/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F41/34 ,  H10N50/01 ,  H10N50/80

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first ultra low-k (ULK) dielectric layer on the first MTJ and the second MTJ, a passivation layer on the first ULK dielectric layer, and a second ULK dielectric layer on the passivation layer. Preferably, the first ULK dielectric layer includes a first thickness, the passivation layer between the first MTJ and the second MTJ includes a second thickness, the passivation layer on top of the first MTJ includes a third thickness, and the second thickness is greater than the third thickness

公开(公告)号：US12120962B2

公开(公告)日：2024-10-15

申请号：US18504176

申请日：2023-11-08

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tai-Cheng Hou ,  Fu-Yu Tsai ,  Bin-Siang Tsai ,  Da-Jun Lin ,  Chau-Chung Hou ,  Wei-Xin Gao

IPC: H10N50/01 ,  H10B61/00 ,  H10N50/80

CPC classification number: H10N50/01 ,  H10B61/00 ,  H10N50/80

Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate, wherein the substrate comprises a MRAM region and a logic region; forming a magnetic tunneling junction (MTJ) on the MRAM region; forming a top electrode on the MTJ; and then performing a flowable chemical vapor deposition (FCVD) process to form a first inter-metal dielectric (IMD) layer around the top electrode and the MTJ.

公开(公告)号：US20240332066A1

公开(公告)日：2024-10-03

申请号：US18136888

申请日：2023-04-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Chih-Wei Chang ,  Fu-Yu Tsai ,  Bin-Siang Tsai

IPC: H01L21/768 ,  H01L23/532

CPC classification number: H01L21/7682 ,  H01L21/76832 ,  H01L23/53238

Abstract: A semiconductor structure includes a substrate; a first dielectric layer on the substrate; an etch stop layer on the first dielectric layer; a second dielectric layer on the etch stop layer; a first conductor and a second conductor in the second dielectric layer, an air gap in the second dielectric layer and between the first conductor and the second conductor; and a low-polarity dielectric layer on a sidewall surface of the second dielectric layer within the air gap.

公开(公告)号：US12015076B2

公开(公告)日：2024-06-18

申请号：US18092916

申请日：2023-01-03

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chih-Wei Chang ,  Yao-Hsien Chung ,  Shih-Wei Su ,  Hao-Hsuan Chang ,  Da-Jun Lin ,  Ting-An Chien ,  Bin-Siang Tsai

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/423 ,  H01L29/778

CPC classification number: H01L29/66462 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/42364 ,  H01L29/7786

Abstract: A high electron mobility transistor includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer. The composition of the first III-V compound layer is different from that of the second III-V compound layer. A trench is disposed within the first III-V compound layer and the second III-V compound layer. The trench has a first corner and a second corner. The first corner and the second corner are disposed in the first III-V compound layer. A first dielectric layer contacts a sidewall of the first corner. A second dielectric layer contacts a sidewall of the second corner. The first dielectric layer and the second dielectric layer are outside of the trench. A gate is disposed in the trench. A source electrode and a drain electrode are respectively disposed at two sides of the gate. A gate electrode is disposed on the gate.

公开(公告)号：US12014995B2

公开(公告)日：2024-06-18

申请号：US17369936

申请日：2021-07-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Chin-Chia Yang ,  Tai-Cheng Hou ,  Fu-Yu Tsai ,  Bin-Siang Tsai

IPC: H01L23/00 ,  H01L21/02 ,  H01L23/522 ,  H01L29/417

CPC classification number: H01L23/562 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02348 ,  H01L23/5226 ,  H01L29/41725

Abstract: A warpage-reducing semiconductor structure includes a wafer. The wafer includes a front side and a back side. Numerous semiconductor elements are disposed at the front side. A silicon oxide layer is disposed at the back side. A UV-transparent silicon nitride layer covers and contacts the silicon oxide layer. The refractive index of the UV-transparent silicon nitride layer is between 1.55 and 2.10.

公开(公告)号：US20240014069A1

公开(公告)日：2024-01-11

申请号：US18372712

申请日：2023-09-26

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Bin-Siang Tsai

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76858 ,  H01L21/76802 ,  H01L21/7684 ,  H01L23/5226 ,  H01L21/76877 ,  H01L23/53238 ,  H01L21/76846

Abstract: A method for fabricating semiconductor device includes the steps of: forming a dielectric layer on a substrate; forming a trench in the dielectric layer; forming a first liner in the trench, wherein the first liner comprises Co—Ru alloy; forming a metal layer on the first liner; and planarizing the metal layer and the first liner to form a metal interconnection.

公开(公告)号：US20230377952A1

公开(公告)日：2023-11-23

申请号：US17835983

申请日：2022-06-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Da-Jun Lin ,  Fu-Yu Tsai ,  Bin-Siang Tsai ,  Chung-Yi Chiu

IPC: H01L21/768 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/76813 ,  H01L21/304 ,  H01L21/31056 ,  H01L21/31144

Abstract: A gallium nitride (GaN) device with field plate structure, including a substrate, a gate on the substrate and a passivation layer covering on the gate, a source and a drain on the substrate and the passivation layer, a stop layer on the source, the drain and the passivation layer, and dual-damascene interconnects connecting respectively with the source and the drain, wherein the dual-damascene interconnect is provided with a via portion under the stop layer and a trench portion on the stop layer, and the via portion is connected with the source or the drain, and the trench portion of one of the dual-damascene interconnects extends horizontally toward the drain and overlaps the gate below in vertical direction, thereby functioning as a field plate structure for the GaN device.

公开(公告)号：US20230361067A1

公开(公告)日：2023-11-09

申请号：US17735126

申请日：2022-05-03

Applicant: United Microelectronics Corp.

Inventor： Chin-Chia Yang ,  Da-Jun Lin ,  Fu-Yu Tsai ,  Bin-Siang Tsai

IPC: H01L23/00

CPC classification number: H01L24/08 ,  H01L24/80 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2924/059

Abstract: A semiconductor structure including a first substrate, a first dielectric layer, a first oxygen doped carbide (ODC) bonding layer, a second substrate, a second dielectric layer, and a second ODC bonding layer is provided. The first dielectric layer is located on the first substrate. The first ODC bonding layer is located on the first dielectric layer. The second dielectric layer is located on the second substrate. The second ODC bonding layer is located on the second dielectric layer. The first ODC bonding layer and the second ODC bonding layer are bonded to each other.