公开(公告)号：US20060219714A1

公开(公告)日：2006-10-05

申请号：US11205137

申请日：2005-08-17

Applicant: Jong Lee ,  Yong Lee ,  Seung Baek

Inventor： Jong Lee ,  Yong Lee ,  Seung Baek

IPC: H05B6/72

CPC classification number: H01J23/15 ,  H01J25/50 ,  H05B6/72

Abstract: Disclosed herein is a capacitor for a magnetron. The capacitor has dielectric members, which have a converging angle of less than 180° defined between lines extending from both sides of each dielectric member formed between corresponding ends of inner and outer electrodes of the dielectric member. The capacitor is reduced in size while having enhanced capacitance, thereby reducing a manufacturing time. The capacitor also has central conductors having enlarged portions larger than the inner electrode, thereby further enhancing the capacitance.

Abstract translation: 这里公开了一种用于磁控管的电容器。 该电容器具有电介质构件，该电介质构件具有小于180°的会聚角，所述会聚角限定在从形成在电介质构件的内电极和外电极的相应端之间的每个电介质构件的两侧延伸的线之间。 电容器的尺寸减小而具有增强的电容，从而减少制造时间。 电容器还具有比内部电极大的部分的中心导体，从而进一步提高电容。

公开(公告)号：US20060189822A1

公开(公告)日：2006-08-24

申请号：US11337154

申请日：2006-01-20

Applicant: Seon Yoon ,  Jae Choi ,  Eun Lee ,  Do Kim ,  Yong Lee

Inventor： Seon Yoon ,  Jae Choi ,  Eun Lee ,  Do Kim ,  Yong Lee

IPC: C07C69/76

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01B2202/02 ,  C01B2202/28 ,  C07C43/1745 ,  C07C69/612 ,  C07C2603/50

Abstract: Disclosed herein is a dispersant for dispersing carbon nanotubes which comprises a head having a high affinity for carbon nanotubes and a tail having a high affinity for a dispersion medium. The head includes an aromatic hydrocarbon group with a high affinity for carbon nanotubes to prevent aggregation of the carbon nanotubes, thereby improving the dispersibility of the carbon nanotubes. Further disclosed is a carbon nanotube composition comprising the dispersant.

Abstract translation: 本文公开了一种用于分散碳纳米管的分散剂，其包括对碳纳米管具有高亲和力的头和对分散介质具有高亲和力的尾部。 头包括对碳纳米管具有高亲和力的芳族烃基以防止碳纳米管的聚集，从而提高碳纳米管的分散性。 还公开了包含分散剂的碳纳米管组合物。

公开(公告)号：US20060160326A1

公开(公告)日：2006-07-20

申请号：US11318587

申请日：2005-12-28

Applicant: Yong Lee

Inventor： Yong Lee

IPC: H01L21/76

CPC classification number: H01L21/76235 ,  H01L21/823481

Abstract: A method for forming an isolation trench in a semiconductor device includes the steps of: forming a pad oxide layer over a semiconductor substrate; forming a pad nitride layer over the pad oxide layer; forming a photoresist pattern defining an isolation area on the pad nitride layer; forming a trench in the substrate by etching the pad nitride layer, the pad oxide layer, and the substrate, using the photoresist pattern as a mask; filling the trench with a dielectric material; and oxidizing a portion of the substrate in the vicinity of top corners of the trench.

Abstract translation: 在半导体器件中形成隔离沟槽的方法包括以下步骤：在半导体衬底上形成衬垫氧化层; 在衬垫氧化物层上形成衬垫氮化物层; 形成在所述衬垫氮化物层上限定隔离区的光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为掩模蚀刻衬垫氮化物层，衬垫氧化物层和衬底，在衬底中形成沟槽; 用介电材料填充沟槽; 以及在所述沟槽的顶角附近氧化所述衬底的一部分。

公开(公告)号：US20060151843A1

公开(公告)日：2006-07-13

申请号：US10905580

申请日：2005-01-12

Applicant: Haining Yang ,  Xiangdong Chen ,  Yong Lee ,  Wenhe Lin

Inventor： Haining Yang ,  Xiangdong Chen ,  Yong Lee ,  Wenhe Lin

IPC: H01L29/94

CPC classification number: H01L21/26513 ,  H01L21/26506 ,  H01L21/823807 ,  H01L29/1033 ,  H01L29/4933 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7842 ,  H01L29/7843

Abstract: A method of reducing hot carrier degradation and a semiconductor structure so formed are disclosed. One embodiment of the method includes depositing a silicon nitride layer over a transistor device, ion implanting a species into the silicon nitride layer to drive hydrogen from the silicon nitride layer, and annealing to diffuse the hydrogen into a channel region of the transistor device. The species may be chosen from, for example: germanium (Ge), arsenic (As), xenon (Xe), nitrogen (N), oxygen (O), carbon (C), boron (B), indium (In), argon (Ar), helium (He), and deuterium (De). The ion implantation modulates atoms in the silicon nitride layer such as hydrogen, nitrogen and hydrogen-nitrogen bonds such that hydrogen can be controllably diffused into the channel region.

Abstract translation: 公开了减少热载流子劣化的方法和如此形成的半导体结构。 该方法的一个实施例包括在晶体管器件上沉积氮化硅层，将物质离子注入到氮化硅层中以从氮化硅层驱动氢，以及退火以将氢扩散到晶体管器件的沟道区域。 该物质可以选自例如：锗（Ge），砷（As），氙（Xe），氮（N），氧（O），碳（C），硼（B），铟（In） 氩（Ar），氦（He）和氘（De）。 离子注入调节氮化硅层中的原子，例如氢，氮和氢 - 氮键，使得氢可以可控地扩散到沟道区中。

公开(公告)号：US20060145253A1

公开(公告)日：2006-07-06

申请号：US11319595

申请日：2005-12-29

Applicant: Yong Lee

Inventor： Yong Lee

IPC: H01L29/772 ,  H01L21/336

CPC classification number: H01L29/6659 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/7833

Abstract: A manufacturing method of a double LDD MOS transistor includes forming a gate electrode on a semiconductor substrate; forming a first LDD area by implanting and thermally annealing impurity ions using the gate electrode as a mask; forming a first spacer on both lateral walls of the gate electrode; forming a second LDD area by implanting and thermally annealing impurity ions using the gate electrode and the first spacer as a mask; forming a second spacer on both lateral walls of the gate electrode and the first spacer; and forming a source-drain diffusion area by implanting and thermally annealing impurity ions using the gate electrode, the first spacer, and the second spacer as a mask.

Abstract translation: 双LDD MOS晶体管的制造方法包括在半导体衬底上形成栅电极; 通过使用所述栅极电极作为掩模注入和热退火杂质离子来形成第一LDD区域; 在栅电极的两个侧壁上形成第一间隔物; 通过使用所述栅极电极和所述第一间隔物作为掩模注入和热退火杂质离子来形成第二LDD区域; 在所述栅极电极和所述第一间隔物的两个侧壁上形成第二间隔物; 以及通过使用所述栅极电极，所述第一间隔物和所述第二间隔物作为掩模注入和热退火杂质离子来形成源极 - 漏极扩散区域。

公开(公告)号：US20060113568A1

公开(公告)日：2006-06-01

申请号：US10904808

申请日：2004-11-30

Applicant: Victor Chan ,  Yong Lee ,  Haining Yang

Inventor： Victor Chan ,  Yong Lee ,  Haining Yang

IPC: H01L27/10

CPC classification number: H01L29/7843 ,  H01L21/823807 ,  H01L29/665

Abstract: A semiconductor device structure is provided which includes a first semiconductor device; a second semiconductor device; and a unitary stressed film disposed over both the first and second semiconductor devices. The stressed film has a first portion overlying the first semiconductor device, the first portion imparting a first magnitude compressive stress to a conduction channel of the first semiconductor device, the stressed film further having a second portion overlying the second semiconductor device, the second portion not imparting the first magnitude compressive stress to a conduction channel of the second semiconductor device, the second portion including an ion concentration not present in the second portion such that the second portion imparts one of a compressive stress having a magnitude much lower than the first magnitude, zero stress, and a tensile stress to the conduction channel of the second semiconductor device.

Abstract translation: 提供一种半导体器件结构，其包括第一半导体器件; 第二半导体器件; 以及设置在第一和第二半导体器件两者上的单一应力膜。 应力膜具有覆盖第一半导体器件的第一部分，第一部分向第一半导体器件的导电通道施加第一大小压缩应力，应力膜还具有覆盖第二半导体器件的第二部分，第二部分不 将第一强度压缩应力施加到第二半导体器件的导电通道，第二部分包括不存在于第二部分中的离子浓度，使得第二部分施加具有远低于第一大小的量级的压缩应力之一， 零应力和对第二半导体器件的导电通道的拉伸应力。

公开(公告)号：US20060103511A1

公开(公告)日：2006-05-18

申请号：US10987556

申请日：2004-11-12

Applicant: Yong Lee ,  Weiwen Deng ,  Yuen-Kwok Chin ,  William Lin

Inventor： Yong Lee ,  Weiwen Deng ,  Yuen-Kwok Chin ,  William Lin

IPC: G08B21/00

CPC classification number: B62D5/008 ,  B62D6/002 ,  B62D13/06 ,  B62D15/027

Abstract: A vehicle-trailer back-up control system that employs an active front steer sub-system. The system includes a smart hitch controller that receives a vehicle speed signal and a hand-wheel angle signal, and calculates a hitch angle command signal. The system further includes a hitch angle sensor that measures the hitch angle between the vehicle and the trailer that is compared to the hitch angle command signal to generate a hitch angle error signal. A PID control unit receives the hitch angle error signal, and generates a corrected road wheel angle signal based on proportional and derivative gains. The corrected road wheel angle signal is used to generate a motor angle signal that is applied to a steering actuator to be combined with the steering angle signal to generate the front wheel steering signal during a back-up maneuver.

公开(公告)号：US20060085942A1

公开(公告)日：2006-04-27

申请号：US11029383

申请日：2005-01-06

Applicant: Yong Lee ,  Choon Chung ,  Ho Rew ,  Hyeun Nam ,  Young Jung

Inventor： Yong Lee ,  Choon Chung ,  Ho Rew ,  Hyeun Nam ,  Young Jung

IPC: A47L11/30

CPC classification number: A47L5/225 ,  A47L5/30 ,  A47L5/32 ,  A47L11/34 ,  A47L11/4044

Abstract: A complex type cleaner includes: a body provided with a dust collecting container for storing dust; a fan motor installed at the body and generating a suction force; a vacuum cleaning head disposed at a lower side of the body, for sucking dust at the time of performing vacuum cleaning; and a water cleaning head mounted at the vacuum cleaning head, and provided with a suction head through which contaminated water is sucked at the time of performing water cleaning and a water collecting container for storing contaminated water sucked through the suction head. As a suction nozzle for sucking contaminated water and a water collecting container for storing the contaminated water sucked through the suction nozzle are integrally formed and installed at a suction head, there is provided a complex type capable of reducing the number of parts and a production cost, and employing a small capacity fan motor.

Abstract translation: 复合式清洁器包括：设置有用于存储灰尘的集尘容器的主体; 安装在车身上并产生吸力的风扇马达; 设置在主体的下侧的真空清洁头，用于在进行真空清洁时吸入灰尘; 以及安装在真空清洁头上的水清洁头，并且在进行水清洗时设置有吸入被吸收的水的吸头，以及用于储存通过吸头吸入的污水的集水容器。 作为用于吸入污水的吸嘴和用于储存通过吸嘴吸入的污染水的集水容器一体地形成并安装在吸头上，提供了能够减少零件数量和生产成本的复合型 ，并采用小容量风扇电机。

公开(公告)号：US20060049151A1

公开(公告)日：2006-03-09

申请号：US11217388

申请日：2005-09-02

Applicant: Yong Lee

Inventor： Yong Lee

IPC: B23K9/00 ,  B23K9/02

CPC classification number: H01J11/46 ,  G09G3/288 ,  G09G5/006 ,  G09G2300/0426 ,  G09G2320/0223 ,  H01J11/12 ,  H01L2924/0002 ,  H05K1/117 ,  H05K3/323 ,  H05K3/361 ,  H05K2201/09409 ,  H05K2201/09709 ,  H01L2924/00

Abstract: The present invention relates to a plasma display apparatus, and more particularly, to a plasma display apparatus having an electrode pad. The plasma display apparatus includes a plasma display panel having electrodes, an electrode driving unit for driving the plasma display panel, and an electrode pad for connecting the electrode driving unit and the plasma display panel. The electrode pad includes a first electrode part including a first electrode connection part connected to the electrodes of the plasma display panel and having a first line width, a first intermediate connection part connected at one end to the first electrode connection part and having a second line width smaller than the first line width, and a first connector connection part connected at one end to the other end of the first intermediate connection part and having a third line width greater than the second line width, and a second electrode part, and a second electrode part including a second electrode connection part connected to the electrodes of the plasma display panel and having a fourth line width, a second intermediate connection part connected at one end to the second electrode connection part and having a fifth line width, which is smaller than or the same as the fourth line width, and a second connector connection part connected at one end to the other end of the second intermediate connection part and having a sixth line width greater than the fifth line width. The first electrode part is disposed adjacent to the second electrode part, and the length of the first intermediate connection part and the length of the second intermediate connection part are different from each other. According to the present invention, the line width of the intermediate connection part is made narrow and the width of the connector connection part is made wide. An align tolerance can be secured.

Abstract translation: 等离子显示装置技术领域本发明涉及等离子体显示装置，更具体地说，涉及具有电极焊盘的等离子体显示装置。 等离子体显示装置包括具有电极的等离子体显示面板，用于驱动等离子体显示面板的电极驱动单元和用于连接电极驱动单元和等离子体显示面板的电极焊盘。 电极焊盘包括第一电极部分，其包括连接到等离子体显示面板的电极并具有第一线宽度的第一电极连接部分，第一中间连接部分在一端连接到第一电极连接部分并具有第二线 宽度小于第一线宽度，第一连接器连接部分在一端连接到第一中间连接部分的另一端并且具有大于第二线宽度的第三线宽度，以及第二电极部分，第二电极部分 电极部分，包括连接到等离子体显示面板的电极并具有第四线宽度的第二电极连接部分，一端连接到第二电极连接部分并具有第五线宽度的第二中间连接部分，其小于 或者与第四线宽度相同，以及第二连接器连接部分，其一端连接到第二i的另一端 并且具有大于第五行宽度的第六行宽度。 第一电极部与第二电极部相邻配置，第一中间连接部的长度和第二中间连接部的长度彼此不同。 根据本发明，使中间连接部的线宽变窄，连接器连接部的宽度变宽。 可以确保对准公差。

公开(公告)号：US20060011813A1

公开(公告)日：2006-01-19

申请号：US11044135

申请日：2005-01-27

Applicant: Young Park ,  Ki Kim ,  Bum Kim ,  Jeong Bae ,  Yu Ahn ,  Jung Ahn ,  Soo Lee ,  Yong Lee ,  Sung Hwang

Inventor： Young Park ,  Ki Kim ,  Bum Kim ,  Jeong Bae ,  Yu Ahn ,  Jung Ahn ,  Soo Lee ,  Yong Lee ,  Sung Hwang

IPC: H01L27/00

CPC classification number: H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14645 ,  H01L27/14685

Abstract: A CMOS image sensor with improved sensitivity includes a main pixel array region of an active pixel array region formed on a semiconductor substrate. A passivation layer is formed over the sensor, and it is at least partially removed from the main pixel array region, such that incident light being detected by the main pixel array does not pass through the passivation layer. Optical absorption and refraction caused by the material of the passivation layer are eliminated, resulting in an image sensor with improved optical sensitivity.