公开(公告)号：US10724138B2

公开(公告)日：2020-07-28

申请号：US15992330

申请日：2018-05-30

Applicant: Applied Materials, Inc.

Inventor： Kalyanjit Ghosh ,  Mayur G. Kulkarni ,  Sanjeev Baluja ,  Kien N. Chuc ,  Sungjin Kim ,  Yanjie Wang

IPC: C23C16/44 ,  H01J37/32

Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.

公开(公告)号：US20200090978A1

公开(公告)日：2020-03-19

申请号：US16664487

申请日：2019-10-25

Applicant: Applied Materials, Inc.

Inventor： Joseph AuBuchon ,  Sanjeev Baluja ,  Michael Rice ,  Arkaprava Dan ,  Hanhong Chen

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458

Abstract: Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

公开(公告)号：US10518418B2

公开(公告)日：2019-12-31

申请号：US15860102

申请日：2018-01-02

Applicant: Applied Materials, Inc.

Inventor： Dale R. Du Bois ,  Juan Carlos Rocha-Alvarez ,  Karthik Janakiraman ,  Hari K. Ponnekanti ,  Sanjeev Baluja ,  Prajeeth Wilton

IPC: H01L21/67 ,  B25J11/00 ,  H01L21/677

Abstract: The present disclosure generally relates to semiconductor process equipment used to transfer semiconductor substrates between process chambers. More specifically, embodiments described herein are related to systems and methods used to transfer, or swap, semiconductor substrates between process chambers using a transport device that employs at least two blades for the concurrent transfer of substrates between processing chambers.

公开(公告)号：US10233543B2

公开(公告)日：2019-03-19

申请号：US14965061

申请日：2015-12-10

Applicant: Applied Materials, Inc.

Inventor： Amit Kumar Bansal ,  Juan Carlos Rocha-Alvarez ,  Sanjeev Baluja ,  Sam H. Kim ,  Tuan Anh Nguyen

IPC: C23C16/455

Abstract: The present disclosure relates to a semiconductor processing apparatus. The processing chamber includes a chamber body and lid defining an interior volume, a substrate support disposed in the interior volume and a showerhead assembly disposed between the lid and the substrate support. The showerhead assembly includes a faceplate configured to deliver a process gas to a processing region defined between the showerhead assembly and the substrate support and a underplate positioned above the faceplate, defining a first plenum between the lid and the underplate, the having multiple zones, wherein each zone has a plurality of openings that are configured to pass an amount of inert gas from the first plenum into a second plenum defined between the faceplate and the underplate, in fluid communication with the plurality of openings of each zone such that the inert gas mixes with the process gas before exiting the showerhead assembly.

公开(公告)号：US09889567B2

公开(公告)日：2018-02-13

申请号：US14972366

申请日：2015-12-17

Applicant: Applied Materials, Inc.

Inventor： Dale R. Du Bois ,  Juan Carlos Rocha-Alvarez ,  Karthik Janakiraman ,  Hari K. Ponnekanti ,  Sanjeev Baluja ,  Prajeeth Wilton

IPC: H01L21/677 ,  B25J11/00 ,  H01L21/67

CPC classification number: B25J11/0095 ,  H01L21/67196 ,  H01L21/67742 ,  H01L21/67748

Abstract: The present disclosure generally relates to semiconductor process equipment used to transfer semiconductor substrates between process chambers. More specifically, embodiments described herein are related to systems and methods used to transfer, or swap, semiconductor substrates between process chambers using a transport device that employs at least two blades for the concurrent transfer of substrates between processing chambers.

公开(公告)号：US09506145B2

公开(公告)日：2016-11-29

申请号：US15180514

申请日：2016-06-13

Applicant: Applied Materials, Inc.

Inventor： Sanjeev Baluja ,  Alexandros T. Demos ,  Kelvin Chan ,  Juan Carlos Rocha-Alvarez ,  Scott A. Hendrickson ,  Abhijit Kangude ,  Inna Turevsky ,  Mahendra Chhabra ,  Thomas Nowak ,  Daping Yao ,  Bo Xie ,  Daemian Raj

IPC: H01L21/00 ,  C23C16/44 ,  C23C16/48 ,  C23C16/455

CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

公开(公告)号：US20130284204A1

公开(公告)日：2013-10-31

申请号：US13856962

申请日：2013-04-04

Applicant: Applied Materials, Inc.

Inventor： BO XIE ,  Alexandros T. Demos ,  Scott A. Hendrickson ,  Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez

IPC: B08B7/00

CPC classification number: B08B7/0021 ,  B08B7/0035 ,  C23C16/4405 ,  H01J37/3244 ,  H01J37/32862

Abstract: Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals.

Abstract translation: 本发明的实施例通常提供用于清洁UV处理室的方法。 在一个实施方案中，该方法包括使含氧气体通过形成在UV透明气体分配喷头中的多个通道流入位于UV透明气体分配喷头和位于热处理室内的基板支架之间的处理区域中， 在包含低压级和高压级的压力方案下将含氧气体暴露于紫外线辐射以产生活性氧自由基，以及从在热处理室中呈现的腔室组分的暴露表面去除不需要的残留物或沉积物 使用活性氧自由基。