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    Methods to fill high aspect ratio features on semiconductor substrates with MOCVD cobalt film
    2.
    发明授权
    Methods to fill high aspect ratio features on semiconductor substrates with MOCVD cobalt film 有权

    公开(公告)号：US10600685B2

    公开(公告)日：2020-03-24

    申请号：US15823422

    申请日：2017-11-27

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Daping Yao ,  Jiang Lu ,  Can Xu ,  Paul F. Ma ,  Mei Chang

    IPC: H01L21/44 ,  H01L21/768 ,  H01L23/532 ,  H01L21/285

    Abstract: In some embodiments, a method of forming a cobalt layer on a substrate disposed in a process chamber, includes: (a) exposing the substrate to a first process gas comprising a cobalt precursor and a hydrogen containing gas to grow a smooth cobalt layer on a first surface of the substrate and on sidewalls and a bottom surface of a feature formed in the first surface of the substrate; (b) purging the first process gas from the process chamber; and (c) annealing the substrate in a hydrogen atmosphere to fill in voids within the cobalt layer to form a void-free cobalt layer. In some embodiments, plasma treating the substrate in gas under low pressure and/or thermally baking the substrate in gas in an atmosphere under a low pressure, may be performed prior to anneal.

    Method and hardware for cleaning UV chambers
    4.
    发明授权
    Method and hardware for cleaning UV chambers 有权
    清洁UV室的方法和硬件

    公开(公告)号：US09364871B2

    公开(公告)日：2016-06-14

    申请号：US13970176

    申请日：2013-08-19

    Applicant: Applied Materials, Inc.

    Inventor： Sanjeev Baluja ,  Alexandros T. Demos ,  Kelvin Chan ,  Juan Carlos Rocha-Alvarez ,  Scott A. Hendrickson ,  Abhijit Kangude ,  Inna Turevsky ,  Mahendra Chhabra ,  Thomas Nowak ,  Daping Yao ,  Bo Xie ,  Daemian Raj

    IPC: C23C16/455 ,  B08B7/00 ,  C11D11/00 ,  C23C16/44 ,  C23C16/48

    CPC classification number: C23C16/4405 ,  B08B7/0021 ,  B08B7/0057 ,  C11D11/0041 ,  C23C16/45565 ,  C23C16/482

    Abstract: A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NF3 and O2 to remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

    Abstract translation: 用于UV室的清洁方法包括向腔室中的一个或多个开口提供第一清洁气体，第二清洁气体和净化气体。 第一清洁气体可以是含氧气体，例如臭氧，以除去碳残留物。 第二清洁气体可以是NF3和O2的远程等离子体以除去硅残余物。 UV室可以具有两个UV透明花洒，其与室盖中的UV窗口一起限定靠近UV窗口的气体体积和低于气体体积的分布体积。 吹扫气体可以流过气体体积，同时一个或多个清洁气体流入分配容积以防止清洁气体撞击到UV透明窗口上。

    APPARATUS FOR SELECTIVELY SEALING A GAS FEEDTHROUGH
    8.
    发明申请
    APPARATUS FOR SELECTIVELY SEALING A GAS FEEDTHROUGH 审中-公开
    用于选择性地密封气体的装置

    公开(公告)号：US20160326648A1

    公开(公告)日：2016-11-10

    申请号：US15148158

    申请日：2016-05-06

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Hyman W. H. Lam ,  Dien-Yeh Wu ,  Paul F. Ma ,  Daping Yao

    IPC: C23C16/455 ,  F16K25/00 ,  C23C16/52

    CPC classification number: F16K25/00 ,  C23C16/4401 ,  C23C16/45561 ,  C23C16/45565 ,  F16K15/025 ,  H01L21/67126

    Abstract: A valve for sealing a gas feedthrough is provided herein. In some embodiments, a valve for sealing off a gas feedthrough includes a valve body having an upper portion and a lower portion, wherein the upper portion includes a central opening, and wherein the lower portion includes an inner volume; a coupling member disposed within the inner volume and having a central conduit, wherein the inner volume is defined by an upper surface of the coupling member and an upper wall and sidewalls of the lower portion; a sealing member having a shaft extending through the central opening and a flange extending radially outward from the shaft, wherein the flange includes an upper surface which opposes the upper wall of the lower portion; and a biasing element disposed between the sealing member and coupling member to bias the sealing member against the upper wall.

    Abstract translation: 本文提供了一种用于密封气体馈通的阀。 在一些实施例中，用于密封气体馈通的阀包括具有上部和下部的阀体，其中所述上部包括中心开口，并且其中所述下部包括内部容积; 联接构件，其设置在所述内部容积内并且具有中心导管，其中所述内部容积由所述联接构件的上表面和所述下部的上壁和侧壁限定; 密封构件，其具有延伸穿过中心开口的轴和从轴径向向外延伸的凸缘，其中所述凸缘包括与所述下部的上壁相对的上表面; 以及设置在密封构件和联接构件之间以将密封构件偏压抵靠上壁的偏压元件。

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