公开(公告)号：US10930472B2

公开(公告)日：2021-02-23

申请号：US16250763

申请日：2019-01-17

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Annamalai Lakshmanan ,  Kaushal K. Singh ,  Andrew Cockburn ,  Ludovic Godet ,  Paul F. Ma ,  Mehul B. Naik

IPC: H01J37/32 ,  C23C16/42 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/268

Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.

公开(公告)号：US10705268B2

公开(公告)日：2020-07-07

申请号：US16120733

申请日：2018-09-04

Applicant: Applied Materials, Inc.

Inventor： Jinxin Fu ,  Ludovic Godet ,  Wayne McMillan

IPC: B29D11/00 ,  G02B5/18 ,  G03F7/00

Abstract: Embodiments of the present disclosure generally relate to a method for forming an optical component, for example, for a virtual reality or augmented reality display device. In one embodiment, the method includes forming a first layer on a substrate, and the first layer has a first refractive index. The method further includes pressing a stamp having a pattern onto the first layer, and the pattern of the stamp is transferred to the first layer to form a patterned first layer. The method further includes forming a second layer on the patterned first layer by spin coating, and the second layer has a second refractive index greater than the first refractive index. The second layer having the high refractive index is formed by spin coating, leading to improved nanoparticle uniformity in the second layer.

公开(公告)号：US20200150325A1

公开(公告)日：2020-05-14

申请号：US16228205

申请日：2018-12-20

Applicant: APPLIED Materials, Inc.

Inventor： Joseph C. Olson ,  Ludovic Godet ,  Costel Biloiu

IPC: G02B5/18

Abstract: Optical grating components and methods of forming are provided. In some embodiments, a method includes providing a substrate, and etching a plurality of trenches into the substrate to form an optical grating. The optical grating may include a plurality of angled trenches, wherein a depth of a first trench of the plurality of trenches varies between at least one of the following: a first lengthwise end of the first trench and a second lengthwise end of the first trench, and between a first side of the first trench and a second side of the first trench.

公开(公告)号：US10593592B2

公开(公告)日：2020-03-17

申请号：US14975028

申请日：2015-12-18

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Annamalai Lakshmanan ,  Kaushal K. Singh ,  Paul F. Ma ,  Mehul B. Naik ,  Andrew Cockburn ,  Ludovic Godet

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L21/3205

Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide stack comprising as plurality of metal silicide layers on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide stack in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer.

公开(公告)号：US10204764B2

公开(公告)日：2019-02-12

申请号：US14525555

申请日：2014-10-28

Applicant: Applied Materials, Inc.

Inventor： Bencherki Mebarki ,  Annamalai Lakshmanan ,  Kaushal K. Singh ,  Andrew Cockburn ,  Ludovic Godet ,  Paul F. Ma ,  Mehul Naik

IPC: C23C16/42 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  C23C16/56 ,  H01L21/268

Abstract: Methods and apparatus for forming a metal silicide as nanowires for back-end interconnection structures for semiconductor applications are provided. In one embodiment, the method includes forming a metal silicide layer on a substrate by a chemical vapor deposition process or a physical vapor deposition process, thermal treating the metal silicide layer in a processing chamber, applying a microwave power in the processing chamber while thermal treating the metal silicide layer; and maintaining a substrate temperature less than 400 degrees Celsius while thermal treating the metal silicide layer. In another embodiment, a method includes supplying a deposition gas mixture including at least a metal containing precursor and a reacting gas on a surface of a substrate, forming a plasma in the presence of the deposition gas mixture by exposure to microwave power, exposing the plasma to light radiation, and forming a metal silicide layer on the substrate from the deposition gas.

公开(公告)号：US10167574B2

公开(公告)日：2019-01-01

申请号：US14577971

申请日：2014-12-19

Applicant: Applied Materials, Inc.

Inventor： Sangmin Jeong ,  Hann-Ching Chao ,  Ludovic Godet

IPC: C40B50/18 ,  C40B60/00 ,  C40B60/04 ,  B01L3/00 ,  B01J19/00

Abstract: Embodiments described herein generally relate to biomedical devices including a porous layer forming a support structure for a biological probe and methods of making the same. The porous layer can be a porous silicon containing layer. The pore size can be adjusted such that various size biological probes can be incorporated into the pores. Further, the porous silicon containing layer can be used to support a biofunctionalizing layer.

公开(公告)号：US10096466B2

公开(公告)日：2018-10-09

申请号：US15073444

申请日：2016-03-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun Xue ,  Ludovic Godet ,  Srinivas Nemani ,  Michael W. Stowell ,  Qiwei Liang ,  Douglas A. Buchberger

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/768

Abstract: Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source; wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating.

公开(公告)号：US09947539B2

公开(公告)日：2018-04-17

申请号：US15658266

申请日：2017-07-24

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Tobin Kaufman-Osborn

IPC: H01L21/02 ,  H01L21/263 ,  H01L21/027 ,  H01L21/285

CPC classification number: H01L21/263 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0243 ,  H01L21/02639 ,  H01L21/0274 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/321

Abstract: Atomic layer deposition in selected zones of a workpiece surface is accomplished by transforming the surfaces outside the selected zones to a hydrophobic state while the materials in the selected zones remain hydrophilic.

公开(公告)号：US09852902B2

公开(公告)日：2017-12-26

申请号：US14506536

申请日：2014-10-03

Applicant: Applied Materials, Inc.

Inventor： Jun Xue ,  Ludovic Godet ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle

IPC: H01L21/02 ,  H01J37/32 ,  C23C14/04 ,  H01L21/033

CPC classification number: H01L21/02527 ,  C23C14/046 ,  H01J37/321 ,  H01J37/32422 ,  H01L21/02274 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/033 ,  H01L21/67253

Abstract: Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a trench is formed on the pattern layer. The trench comprises a bottom and a sidewall. The material layer is deposited into the trench using the ion implantation process. The material layer is deposited on the bottom of the trench in a direction along the sidewall.

公开(公告)号：US20170323778A1

公开(公告)日：2017-11-09

申请号：US15658266

申请日：2017-07-24

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Srinivas D. Nemani ,  Tobin Kaufman-Osborn

IPC: H01L21/02 ,  H01L21/263 ,  H01L21/027 ,  H01L21/285

CPC classification number: H01L21/263 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/0243 ,  H01L21/02639 ,  H01L21/0274 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/321

Abstract: Atomic layer deposition in selected zones of a workpiece surface is accomplished by transforming the surfaces outside the selected zones to a hydrophobic state while the materials in the selected zones remain hydrophilic.