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    Isolated FinFET P-channel/N-channel transistor pair
    133.
    发明授权
    Isolated FinFET P-channel/N-channel transistor pair 有权
    隔离型FinFET P沟道/ N沟道晶体管对

    公开(公告)号：US06974983B1

    公开(公告)日：2005-12-13

    申请号：US10768660

    申请日：2004-02-02

    Applicant: Wiley Eugene Hill ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

    Inventor： Wiley Eugene Hill ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

    IPC: H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/062

    CPC classification number: H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66795

    Abstract: A semiconductor device includes an N-channel device and a P-channel device. The N-channel device includes a first source region, a first drain region, a first fin structure, and a gate. The P-channel device includes a second source region, a second drain region, a second fin structure, and the gate. The second source region, the second drain region, and the second fin structure are separated from the first source region, the first drain region, and the first fin structure by a channel stop layer.

    Abstract translation: 半导体器件包括N沟道器件和P沟道器件。 N沟道器件包括第一源极区，第一漏极区，第一鳍结构和栅极。 P沟道器件包括第二源极区，第二漏极区，第二鳍结构和栅极。 第二源极区域，第二漏极区域和第二鳍状结构通过沟道阻挡层与第一源极区域，第一漏极区域和第一鳍片结构分离。

    Cryopreservation of plant cells
    135.
    发明申请
    Cryopreservation of plant cells 审中-公开
    植物细胞的冷冻保存

    公开(公告)号：US20050158699A1

    公开(公告)日：2005-07-21

    申请号：US10871705

    申请日：2004-06-21

    Applicant: Prakash Kadkade ,  Christopher Bare ,  Barbara Schnabel-Preikstas ,  Bin Yu

    Inventor： Prakash Kadkade ,  Christopher Bare ,  Barbara Schnabel-Preikstas ,  Bin Yu

    IPC: A01N1/02 ,  C12N5/04

    CPC classification number: A01N1/0284 ,  A01N1/0221

    Abstract: The present invention relates to methods for cryopreserving plant cells and to methods for recovering viable plant cells from long or short term cryopreservation. Plant cells to be cryopreserved can be grown in culture and pretreated with a solution containing an cryoprotective agent and, optionally, a stabilizer. Stabilizers are preferably membrane stabilizers such as ethylene inhibitors, oxygen radical scavengers and divalent cations. Cells can also be stabilized by subjecting the culture to a heat shock. Pretreated cells are acclimated to a reduced temperature and loaded with a cryoprotective agent such as DMSO, propylene glycol or polyethylene glycol. Loaded cells are incubated with a vitrification solution which, for example, comprises a solution with a high concentration of the cryoprotective agent. Vitrified cells retain less than about 20% water content and can be frozen at cryopreservation temperatures for long periods of time without significantly altering the genotypic or phenotypic character of the cells. Plant cells may also be cryopreserved by lyophilizing cells prior to exposure to a vitrification solution. The combination of lyophilization and vitrification removes about 80% to about 95% of the plant cell's water. Cells can be successfully cryopreserved for long periods of time and viably recovered. The invention also relates to methods for the recovery of viable plant cells from cryopreservation. Cells are thawed to about room temperature and incubated in medium containing a cryoprotective agent and a stabilizer. The cryoprotective agent is removed and the cells successfully incubated and recovered in liquid or semi-solid growth medium. The invention also relates to the cryopreserved cells and to viable plant cells which have been recovered from long or short term cryopreservation.

    Abstract translation: 本发明涉及用于冷冻保存植物细胞的方法和从长期或短期冷冻保存中回收活的植物细胞的方法。 待冷冻保存的植物细胞可以在培养物中生长并用含有冷冻保护剂和任选的稳定剂的溶液预处理。 稳定剂优选为膜稳定剂，例如乙烯抑制剂，氧自由基清除剂和二价阳离子。 也可以通过使培养物受热休克来稳定细胞。 预处理的细胞适应于降低的温度，并加载冷冻保护剂如DMSO，丙二醇或聚乙二醇。 将加载的细胞与玻璃化溶液一起孵育，所述玻璃化溶液例如包含具有高浓度冷冻保护剂的溶液。 玻璃化细胞保留少于约20％的水含量，并且可以在冷冻保存温度下长时间冷冻，而不显着改变细胞的基因型或表型特征。 植物细胞也可以在暴露于玻璃化溶液之前由冻干细胞冷冻保存。 冻干和玻璃化的组合消除了植物细胞水的约80％至约95％。 细胞可以成功地冷冻保存长时间，有效地恢复。 本发明还涉及从冷冻保存中回收活的植物细胞的方法。 将细胞解冻至约室温，并在含有冷冻保护剂和稳定剂的培养基中孵育。 除去冷冻保护剂，并将细胞在液体或半固体生长培养基中成功培养和回收。 本发明还涉及冷冻保存的细胞和已经从长期或短期冷冻保存中回收的活的植物细胞。

    Merged FinFET P-channel/N-channel pair
    136.
    发明授权
    Merged FinFET P-channel/N-channel pair 有权
    合并FinFET P沟道/ N沟道对

    公开(公告)号：US06914277B1

    公开(公告)日：2005-07-05

    申请号：US10674400

    申请日：2003-10-01

    Applicant: Wiley Eugene Hill ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

    Inventor： Wiley Eugene Hill ,  Shibly S. Ahmed ,  Haihong Wang ,  Bin Yu

    IPC: H01L21/336 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/76

    CPC classification number: H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/66795

    Abstract: A semiconductor device includes an N-channel device and a P-channel device. The N-channel device includes a first source region, a first drain region, a first fin structure, and a gate. The P-channel device includes a second source region, a second drain region, a second fin structure, and the gate. The second source region, the second drain region, and the second fin structure are separated from the first source region, the first drain region, and the first fin structure by an insulating layer.

    Abstract translation: 半导体器件包括N沟道器件和P沟道器件。 N沟道器件包括第一源极区，第一漏极区，第一鳍结构和栅极。 P沟道器件包括第二源极区，第二漏极区，第二鳍结构和栅极。 第二源极区域，第二漏极区域和第二鳍状结构通过绝缘层与第一源极区域，第一漏极区域和第一鳍片结构分离。

    VARYING CARRIER MOBILITY IN SEMICONDUCTOR DEVICES TO ACHIEVE OVERALL DESIGN GOALS
    138.
    发明申请
    VARYING CARRIER MOBILITY IN SEMICONDUCTOR DEVICES TO ACHIEVE OVERALL DESIGN GOALS 有权
    半导体设备的变化载体移动实现总体设计目标

    公开(公告)号：US20050029603A1

    公开(公告)日：2005-02-10

    申请号：US10633504

    申请日：2003-08-05

    Applicant: Bin Yu ,  Shibly Ahmed ,  Haihong Wang

    Inventor： Bin Yu ,  Shibly Ahmed ,  Haihong Wang

    IPC: H01L21/336 ,  H01L27/12 ,  H01L29/786 ,  H01L29/76

    CPC classification number: H01L29/785 ,  H01L27/1203 ,  H01L29/42392 ,  H01L29/66795

    Abstract: A semiconductor device may include a substrate and an insulating layer formed on the substrate. A first device may be formed on the insulating layer, including a first fin. The first fin may be formed on the insulating layer and may have a first fin aspect ratio. A second device may be formed on the insulating layer, including a second fin. The second fin may be formed on the insulating layer and may have a second fin aspect ratio different from the first fin aspect ratio.

    Abstract translation: 半导体器件可以包括衬底和形成在衬底上的绝缘层。 第一器件可以形成在绝缘层上，包括第一鳍片。 第一翅片可以形成在绝缘层上，并且可以具有第一翅片长宽比。 第二装置可以形成在绝缘层上，包括第二鳍片。 第二翅片可以形成在绝缘层上，并且可以具有与第一翅片长宽比不同的第二翅片长宽比。

    Method for forming structures in finfet devices
    139.
    发明授权
    Method for forming structures in finfet devices 有权
    在finfet装置中形成结构的方法

    公开(公告)号：US06852576B2

    公开(公告)日：2005-02-08

    申请号：US10825175

    申请日：2004-04-16

    Applicant: Ming-Ren Lin ,  Haihong Wang ,  Bin Yu

    Inventor： Ming-Ren Lin ,  Haihong Wang ,  Bin Yu

    IPC: H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/786 ,  H01L21/84

    CPC classification number: H01L29/785 ,  H01L21/823412 ,  H01L21/823437 ,  H01L27/088 ,  H01L29/66795 ,  H01L29/7842

    Abstract: A method forms fin structures for a semiconductor device. The method includes forming a first fin structure including a dielectric material and including a first side surface and a second side surface; forming a second fin structure adjacent the first side surface of the first fin structure; and forming a third fin structure adjacent the second side surface of the first fin structure. The second fin structure and the third fin structure are formed of a different material than the first fin structure.

    Abstract translation: 一种形成半导体器件的鳍结构的方法。 该方法包括形成包括电介质材料并包括第一侧表面和第二侧表面的第一鳍结构; 在所述第一翅片结构的第一侧表面附近形成第二鳍结构; 以及在所述第一翅片结构的所述第二侧表面附近形成第三鳍​​结构。 第二翅片结构和第三翅片结构由与第一翅片结构不同的材料形成。

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