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公开(公告)号:US09230996B2
公开(公告)日:2016-01-05
申请号:US14580949
申请日:2014-12-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hiroyuki Miyake , Junichi Koezuka , Masami Jintyou , Yukinori Shima , Shunpei Yamazaki
CPC classification number: H01L27/1225 , H01L27/1237 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/3262 , H01L29/24 , H01L29/7869
Abstract: A light-emitting device capable of suppressing variation in luminance among pixels is provided. A light-emitting device includes a pixel and first and second circuits. The first circuit has a function of generating a signal including a value of current extracted from the pixel. The second circuit has a function of correcting an image signal by the signal. The pixel includes at least a light-emitting element and first and second transistors. The first transistor has a function of controlling supply of the current to the light-emitting element by the image signal. The second transistor has a function of controlling extraction of the current from the pixel. A semiconductor film of each of the first and second transistors includes a first semiconductor region overlapping with a gate, a second semiconductor region in contact with a source or a drain, and a third semiconductor region between the first and second semiconductor regions.
Abstract translation: 提供能够抑制像素之间的亮度变化的发光装置。 发光装置包括像素和第一和第二电路。 第一电路具有产生包括从像素提取的电流值的信号的功能。 第二电路具有通过该信号校正图像信号的功能。 像素至少包括发光元件和第一和第二晶体管。 第一晶体管具有通过图像信号控制向发光元件的电流的供给的功能。 第二晶体管具有控制从像素提取电流的功能。 第一和第二晶体管中的每一个的半导体膜包括与栅极重叠的第一半导体区域,与源极或漏极接触的第二半导体区域以及第一和第二半导体区域之间的第三半导体区域。
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公开(公告)号:US09190448B2
公开(公告)日:2015-11-17
申请号:US14446911
申请日:2014-07-30
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Hiroyuki Miyake , Hideaki Shishido
IPC: G01T1/24 , H01L27/146 , H04N5/32
CPC classification number: H01L27/14659 , H01L27/14603 , H01L27/14609 , H01L27/14663 , H04N5/32 , H04N5/374
Abstract: Provided is an imaging device that can correct an output value of a pixel circuit. The imaging device includes a pixel circuit, a current detection circuit, an A/D converter, one or more memory circuit portions, and an arithmetic circuit portion. The pixel circuit includes a transistor, a charge accumulation portion, and a light-receiving element. The memory circuit portion includes a first look-up table, a second look-up table, and a region where image data output from the arithmetic circuit portion is stored. The first look-up table stores data of potentials of the charge accumulation portion, which depends on the intensity of light. The second look-up table stores output data of the transistor, which depends on the potentials of the charge accumulation portion.
Abstract translation: 提供了可以校正像素电路的输出值的成像装置。 成像装置包括像素电路,电流检测电路,A / D转换器,一个或多个存储器电路部分和运算电路部分。 像素电路包括晶体管,电荷累积部分和光接收元件。 存储器电路部分包括第一查找表,第二查找表和存储从运算电路部分输出的图像数据的区域。 第一查找表存储电荷累积部分的电位的数据,其依赖于光的强度。 第二查找表存储取决于电荷累积部分的电位的晶体管的输出数据。
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公开(公告)号:US09184185B2
公开(公告)日:2015-11-10
申请号:US14620409
申请日:2015-02-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara
IPC: H01L29/12 , H01L27/12 , H01L29/45 , H01L29/786
CPC classification number: H01L27/124 , H01L27/1214 , H01L27/1225 , H01L27/1262 , H01L29/45 , H01L29/78606 , H01L29/7869
Abstract: An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.
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134.
公开(公告)号:US09165502B2
公开(公告)日:2015-10-20
申请号:US14540326
申请日:2014-11-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki , Jun Koyama , Hiroyuki Miyake
CPC classification number: G09G3/3208 , G09G3/2003 , G09G3/3233 , G09G2330/021 , H01L27/1225 , H01L27/3262 , H01L27/3276 , H01L29/78609 , H01L29/7869 , H01L29/78693 , H01L29/78696
Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.
Abstract translation: 目的是提供一种降低功耗的显示装置,以提供其功耗降低并且能够在黑暗处长期使用的自发光显示装置。 使用其中使用高度纯化的氧化物半导体并且像素可以保持一定状态(已经写入视频信号的状态)的薄膜晶体管形成电路。 结果,即使在显示静止图像的情况下,也能够容易地进行稳定的动作。 此外,可以延长驱动电路的操作间隔,这导致显示装置的功耗的降低。 此外,在自发光显示装置的像素部分中使用光存储材料来存储光,由此显示装置可以在黑暗的地方长时间使用。
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135.
公开(公告)号:US09053675B2
公开(公告)日:2015-06-09
申请号:US13667222
申请日:2012-11-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hiroyuki Miyake , Seiko Inoue
IPC: G09G3/36
CPC classification number: G09G3/3648 , G09G3/3685 , G09G2300/0434 , G09G2300/0469 , G09G2320/046 , G09G2330/022
Abstract: To prevent malfunctions from occurring. A shift register, a selection circuit having a function of determining which a first pulse signal or a second pulse signal is output at the same potential level as a pulse signal input from the shift register, and a plurality of driving signal output circuits each having functions of generating and outputting a driving signal are provided. Each of the plurality of driving signal output circuits includes a latch unit, a buffer unit, and a switch unit for controlling rewriting of data stored in the latch unit.
Abstract translation: 防止发生故障。 一种移位寄存器,具有确定在与从移位寄存器输入的脉冲信号相同的电位电平上输出第一脉冲信号或第二脉冲信号的功能的选择电路以及各自具有功能的多个驱动信号输出电路 提供产生和输出驱动信号。 多个驱动信号输出电路中的每一个包括锁存单元,缓冲单元和用于控制重写存储在锁存单元中的数据的开关单元。
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136.
公开(公告)号:US09048117B2
公开(公告)日:2015-06-02
申请号:US13709377
申请日:2012-12-10
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Hiroyuki Miyake , Kei Takahashi
IPC: G11C19/00 , H01L27/088 , G09G3/36 , G11C19/28 , H01L29/04 , H01L29/786 , H01L27/12
CPC classification number: H03K17/162 , G09G3/3648 , G09G3/3677 , G09G2300/0408 , G09G2300/0819 , G09G2310/0286 , G09G2310/0289 , G09G2320/043 , G09G2320/045 , G11C19/28 , G11C19/285 , H01L27/088 , H01L27/1288 , H01L29/04 , H01L29/78696 , H03K17/687
Abstract: An object of the present invention is to suppress deterioration in the thin film transistor. A plurality of pulse output circuits each include first to eleventh thin film transistors is formed. The pulse output circuit is operated on the basis of a plurality of clock signals which control each transistor, the previous stage signal input from a pulse output circuit in the previous stage, the next stage signal input from a pulse output circuit in the next stage, and a reset signal. In addition, a microcrystalline semiconductor is used for a semiconductor layer serving as a channel region of each transistor. Therefore, degradation of characteristics of the transistor can be suppressed.
Abstract translation: 本发明的目的是抑制薄膜晶体管的劣化。 多个脉冲输出电路各自包括第一至第十一薄膜晶体管。 脉冲输出电路基于控制每个晶体管的多个时钟信号,从前一级的脉冲输出电路输入的前级信号,下一级的脉冲输出电路输入的下一级信号, 和复位信号。 此外,微晶半导体用作用作每个晶体管的沟道区的半导体层。 因此,可以抑制晶体管的特性的劣化。
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137.
公开(公告)号:US20140374760A1
公开(公告)日:2014-12-25
申请号:US14318809
申请日:2014-06-30
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hiroyuki Miyake
IPC: H01L27/12
CPC classification number: H01L27/1251 , G09G2310/0267 , G09G2310/0275 , G11C19/00 , G11C19/184 , H01L27/1222 , H01L27/124 , H03K3/36
Abstract: An object is to suppress change of a threshold voltage of a transistor in a shift register and to prevent the transistor from malfunctioning during a non-selection period. A pulse output circuit provided in the shift register regularly supplies a potential to a gate electrode of a transistor which is in a floating state so that the gate electrode is turned on during a non-selection period when a pulse is not outputted. In addition, supply of a potential to the gate electrode of the transistor is performed by turning on or off another transistor regularly.
Abstract translation: 目的是抑制移位寄存器中的晶体管的阈值电压的变化,并且防止晶体管在非选择期间发生故障。 设置在移位寄存器中的脉冲输出电路有规律地向处于浮置状态的晶体管的栅电极提供电位,使得在不输出脉冲的非选择期间,栅电极导通。 此外,通过定期导通或关闭另一个晶体管来提供晶体管的栅电极的电位。
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公开(公告)号:US08908115B2
公开(公告)日:2014-12-09
申请号:US13974328
申请日:2013-08-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Atsushi Umezaki , Hiroyuki Miyake
IPC: G02F1/136 , G02F1/1343 , G09G3/36 , G09G3/32 , H01L27/12 , H01L27/15 , G09G3/34 , H01L29/423 , G09G3/20
CPC classification number: G02F1/1368 , G02F1/136286 , G09G3/20 , G09G3/2022 , G09G3/3233 , G09G3/3266 , G09G3/3275 , G09G3/342 , G09G3/3426 , G09G3/3677 , G09G3/3685 , G09G2300/043 , G09G2300/0852 , G09G2310/0248 , G09G2310/0262 , G09G2310/027 , G09G2310/0275 , G09G2310/0286 , G09G2310/0297 , G09G2320/0233 , G09G2320/043 , G09G2330/021 , G09G2340/02 , G09G2352/00 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L27/156 , H01L27/3232 , H01L27/3276 , H01L29/42384 , H01L2924/0002 , H01L2924/00
Abstract: An object of the invention is to provide a circuit technique which enables reduction in power consumption and high definition of a display device. A switch controlled by a start signal is provided to a gate electrode of a transistor, which is connected to a gate electrode of a bootstrap transistor. When the start signal is input, a potential is supplied to the gate electrode of the transistor through the switch, and the transistor is turned off. The transistor is turned off, so that leakage of a charge from the gate electrode of the bootstrap transistor can be prevented. Accordingly, time for storing a charge in the gate electrode of the bootstrap transistor can be shortened, and high-speed operation can be performed.
Abstract translation: 本发明的目的是提供一种能够降低显示装置的功耗和高清晰度的电路技术。 将由启动信号控制的开关提供给晶体管的栅电极,该晶体管连接到自举晶体管的栅电极。 当输入起始信号时,通过开关将电位提供给晶体管的栅电极,晶体管截止。 晶体管截止,从而可以防止电荷从自举晶体管的栅电极泄漏。 因此,可以缩短在自举晶体管的栅电极中存储电荷的时间,并且可以执行高速操作。
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公开(公告)号:US08896582B2
公开(公告)日:2014-11-25
申请号:US14089025
申请日:2013-11-25
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Jun Koyama , Hiroyuki Miyake
IPC: G09G5/00 , G09G3/36 , G02F1/1345
Abstract: The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.
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公开(公告)号:US08890859B2
公开(公告)日:2014-11-18
申请号:US14219275
申请日:2014-03-19
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Kouhei Toyotaka , Hiroyuki Miyake , Ryo Arasawa , Koji Kusunoki , Tsutomu Murakawa
CPC classification number: G09G3/3648 , G09G3/20 , G09G3/36 , G09G3/3688 , G09G2320/103 , G09G2330/04
Abstract: Provided is a liquid crystal display device having a pixel including a transistor and a liquid crystal element and a protection circuit electrically connected to one of a source and a drain of the transistor through a data line. The protection circuit includes a first terminal supplied with a first power supply potential and a second terminal supplied with a second power supply potential higher than the first power supply potential. In a moving image display mode, an image signal is input from the data line to the liquid crystal element through the transistor, and the first power supply potential is set at the first potential. In a still image display mode, supply of the image signal is stopped, and the first power supply potential is set at the second potential. The second potential is substantially the same as the minimum value of the image signal.
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