Method of forming a slope lateral structure
    131.
    发明授权
    Method of forming a slope lateral structure 有权
    形成斜坡侧向结构的方法

    公开(公告)号:US06489251B2

    公开(公告)日:2002-12-03

    申请号:US09777877

    申请日:2001-02-07

    Applicant: Ching-Yu Chang

    Inventor: Ching-Yu Chang

    CPC classification number: H01L27/11253 H01L27/112 H01L27/1122

    Abstract: The present invention discloses a method of forming a slope lateral structure. In this invention, the silicon nitride and the silicon hydroxide with different etching rates are used. Thus, when the silicon nitride is etching, the top and laterals portion of the silicon hydroxide is suffering the slight etching. So that, when the silicon nitride is etched completely, a slope lateral silicon hydroxide is formed, because of the different etching time on the top and the bottom portion of the silicon hydroxide. Using the present invention, the conventional NROM process problem, which the wordlines are connected by the residue on the laterals of the protective layer after etching process can be solved.

    Abstract translation: 本发明公开了一种形成倾斜侧面结构的方法。 在本发明中,使用具有不同蚀刻速率的氮化硅和氢氧化硅。 因此,当氮化硅蚀刻时,氢氧化硅的顶部和侧面部分遭受轻微蚀刻。 因此,当氮化硅被完全蚀刻时,由于氢氧化硅的顶部和底部上的蚀刻时间不同,因此形成斜面侧向氢氧化硅。 使用本发明,可以解决在蚀刻处理之后,保护层的边缘上的残留物与字线连接的常规NROM工艺问题。

    Method of cleaning a wafer
    132.
    发明授权
    Method of cleaning a wafer 有权
    清洗晶片的方法

    公开(公告)号:US06423147B1

    公开(公告)日:2002-07-23

    申请号:US09682134

    申请日:2001-07-26

    Applicant: Ching-Yu Chang

    Inventor: Ching-Yu Chang

    CPC classification number: H01L21/02052 B08B3/08 H01L21/321 Y10S134/902

    Abstract: A method of removing small particles remaining on a surface of a semiconductor wafer and preventing a silicide layer covering the semiconductor wafer from corroding starts by controlling a temperature of the semiconductor wafer to between room temperature and 45° C. Then, a cleaning solution of a temperature between 0° C. and 45° C. is utilized to clean the semiconductor wafer to effectively remove small particles remaining on the surface of the semiconductor wafer and prevent the silicide layer from corrosion by the cleaning solution. Therein, the cleaning solution is comprised of a pre-determined volume ratio of hydrogen peroxide (H2O2), ammonia (NH4OH), and deionized water.

    Abstract translation: 通过将半导体晶片的温度控制在室温和45℃之间,去除残留在半导体晶片表面上的小颗粒并防止覆盖半导体晶片的硅化物层腐蚀开始的方法。然后, 使用0℃至45℃之间的温度来清洁半导体晶片以有效地去除残留在半导体晶片表面上的小颗粒,并防止硅化物层被清洁溶液腐蚀。 其中,清洁溶液由预定体积比的过氧化氢(H 2 O 2),氨(NH 4 OH)和去离子水组成。

    Photoresist materials and photolithography processes
    135.
    发明授权
    Photoresist materials and photolithography processes 有权
    光刻胶材料和光刻工艺

    公开(公告)号:US08848163B2

    公开(公告)日:2014-09-30

    申请号:US13050251

    申请日:2011-03-17

    Abstract: A lithography apparatus generates a tunable magnetic field to facilitate processing of photoresist. The lithography apparatus includes a chamber and a substrate stage in the chamber operable to hold a substrate. A magnetic module provides a magnetic field to the substrate on the substrate stage. The magnetic module is configured to provide the magnetic field in a tunable and alternating configuration with respect to its magnitude and frequency. The magnetic field is provided to have a gradient in magnitude along a Z-axis that is perpendicular to the substrate stage to cause magnetically-charged particles disposed over the substrate stage to move up and down along the Z-axis. The lithography apparatus also includes a radiation energy source and an objective lens configured to receive radiation energy from the radiation energy source and direct the radiation energy toward the substrate positioned on the substrate stage.

    Abstract translation: 光刻设备产生可调磁场以便于光致抗蚀剂的加工。 光刻设备包括腔室和腔室中的衬底台,其可操作以保持衬底。 磁性模块为衬底台上的衬底提供磁场。 磁模块被配置为相对于其幅度和频率提供可调和交替配置的磁场。 磁场被提供为具有沿垂直于衬底台的Z轴的幅度梯度,以使得设置在衬底台上的带磁性颗粒沿Z轴上下移动。 光刻设备还包括辐射能量源和物镜,其被配置为从辐射能量源接收辐射能量并将辐射能量引向位于衬底台上的衬底。

    Photolithography material for immersion lithography processes
    136.
    发明授权
    Photolithography material for immersion lithography processes 有权
    用于浸没式光刻工艺的光刻材料

    公开(公告)号:US08841058B2

    公开(公告)日:2014-09-23

    申请号:US12913191

    申请日:2010-10-27

    Applicant: Ching-Yu Chang

    Inventor: Ching-Yu Chang

    CPC classification number: G03F7/0046 G03F7/0382 G03F7/0392 G03F7/2041

    Abstract: A photolithography material is provided. The photolithography material is a surface modifying material. The photolithography material includes a polymer (e.g., fluorine polymer) that includes less than approximately 80% hydroxyl groups. In an embodiment, the photolithography material includes less than approximately 80% fluoro-alcohol functional units. Methods of using the photolithography material include as an additive to a photoresist or topcoat layer. The photolithography material may be used in an immersion lithography process.

    Abstract translation: 提供光刻材料。 光刻材料是表面改性材料。 光刻材料包括包含小于约80%羟基的聚合物(例如氟聚合物)。 在一个实施例中,光刻材料包括少于约80%的氟 - 醇官能单元。 使用光刻材料的方法包括作为光致抗蚀剂或顶涂层的添加剂。 光刻材料可以用于浸没式光刻工艺。

    Immersion lithography system using direction-controlling fluid inlets
    137.
    发明授权
    Immersion lithography system using direction-controlling fluid inlets 有权
    浸入光刻系统采用方向控制流体入口

    公开(公告)号:US08767178B2

    公开(公告)日:2014-07-01

    申请号:US13482879

    申请日:2012-05-29

    CPC classification number: G03B27/52 G03F7/70341

    Abstract: Immersion lithography system and method using direction-controlling fluid inlets are described. According to one embodiment of the present disclosure, an immersion lithography apparatus includes a lens assembly having an imaging lens disposed therein and a wafer stage configured to retain a wafer beneath the lens assembly. The apparatus also includes a plurality of direction-controlling fluid inlets disposed adjacent to the lens assembly, each direction-controlling fluid inlet in the plurality of direction-controlling fluid inlets being configured to direct a flow of fluid beneath the lens assembly and being independently controllable with respect to the other fluid inlets in the plurality of direction-controlling fluid inlets.

    Abstract translation: 描述了使用方向控制流体入口的浸渍光刻系统和方法。 根据本公开的一个实施例,浸没式光刻设备包括具有设置在其中的成像透镜的透镜组件和被配置为将晶片保持在透镜组件下方的晶片台。 该装置还包括多个方向控制流体入口,其邻近透镜组件设置,多个方向控制流体入口中的每个方向控制流体入口构造成将透镜流体下方的流体引导到透镜组件的下方并且可独立控制 相对于多个方向控制流体入口中的其它流体入口。

    Surface-modified middle layers
    138.
    发明授权
    Surface-modified middle layers 有权
    表面改性中间层

    公开(公告)号:US08753797B2

    公开(公告)日:2014-06-17

    申请号:US13543582

    申请日:2012-07-06

    CPC classification number: G03F7/09 G03F7/0046

    Abstract: Methods and materials for making a semiconductor device are described. The method includes providing a substrate, forming a surface-modified middle layer (SM-ML) that includes a fluorine-containing material over the substrate, forming a photoresist layer over the SM-ML, exposing the photoresist layer to an exposure energy, and developing the photoresist layer.

    Abstract translation: 描述制造半导体器件的方法和材料。 该方法包括提供衬底,在衬底上形成包含含氟材料的表面改性中间层(SM-ML),在SM-ML上形成光致抗蚀剂层,将光致抗蚀剂层暴露于曝光能量;以及 显影光致抗蚀剂层。

    APPARATUS AND METHOD FOR RESIST COATING AND DEVELOPING
    139.
    发明申请
    APPARATUS AND METHOD FOR RESIST COATING AND DEVELOPING 审中-公开
    用于涂料和发展的装置和方法

    公开(公告)号:US20140017615A1

    公开(公告)日:2014-01-16

    申请号:US13546125

    申请日:2012-07-11

    Applicant: Ching-Yu Chang

    Inventor: Ching-Yu Chang

    CPC classification number: G03F7/162

    Abstract: An apparatus includes a chuck, a first drain cup and second drain cup with two separately drain lines connected to each drain cup. The second drain cup is integrated with the first drain cup and located on top of the first drain cup. The different based chemical wastes can be collected into the separated drain cups and furthermore into the different drain lines and waste tanks. Accordingly, different based photo resists and developers can be used at the same apparatus by adjusting the chuck position to save the coating and develop tool and clean room space and furthermore the production cost.

    Abstract translation: 一种装置包括卡盘,第一排水杯和第二排水杯,其具有连接到每个排水杯的两个单独的排水管线。 第二排水杯与第一排水杯集成,并位于第一排水杯的顶部。 不同的基础化学废物可以被收集到分离的排水杯中并进一步收集到不同的排水管线和废液箱中。 因此,通过调整卡盘位置,可以在相同的装置上使用不同的基于光刻胶和显影剂,以保存涂层,并开发工具和清洁的房间空间以及生产成本。

    PHOTOSENSTIVE MATERIAL AND METHOD OF LITHOGRAPHY
    140.
    发明申请
    PHOTOSENSTIVE MATERIAL AND METHOD OF LITHOGRAPHY 有权
    摄影材料和光刻方法

    公开(公告)号:US20130323641A1

    公开(公告)日:2013-12-05

    申请号:US13486697

    申请日:2012-06-01

    Applicant: Ching-Yu Chang

    Inventor: Ching-Yu Chang

    CPC classification number: G03F7/16 G03F7/0045 G03F7/0046 G03F7/11

    Abstract: Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned.

    Abstract translation: 感光材料和形成图案的方法,其包括提供可操作以漂浮到由感光材料形成的层的顶部区域的感光材料的组分的组合物。 在一个实例中,感光层包括具有氟原子的第一组分(例如,氟烷基)。 在形成感光层之后,第一部件漂浮到感光层的顶表面。 此后,对感光层进行图案化。

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