Phase lock loop (PLL) with gain control
    141.
    发明授权
    Phase lock loop (PLL) with gain control 有权
    具有增益控制的锁相环(PLL)

    公开(公告)号:US07786771B2

    公开(公告)日:2010-08-31

    申请号:US12127651

    申请日:2008-05-27

    IPC分类号: H03L7/06

    摘要: A Phase Lock Loop (PLL) with gain control is provided. The PLL has a dual-path configuration, where a first and a second VCO control voltage are generated in response to a phase or frequency difference between a PLL input signal and an output signal. The PLL comprises a dynamic voltage gain control (DVGC) unit and a voltage-to-current (V2I) unit, where the DVGC creates a baseline reference current in response to the first VCO control voltage and the V2I provides a substantially linear current in response to the second VCO control voltage. The currents from the DVGC and V2I are combined and fed into a current-controlled oscillator, which generates a PLL output frequency signal. Frequency gain of the VCO is substantially reduced, thus providing a PLL with improved tuning precision.

    摘要翻译: 提供了具有增益控制的锁相环(PLL)。 PLL具有双路配置,其中响应于PLL输入信号和输出信号之间的相位或频率差产生第一和第二VCO控制电压。 PLL包括动态电压增益控制(DVGC)单元和电压 - 电流(V2I)单元,其中DVGC响应于第一VCO控制电压创建基准参考电流,并且V2I提供基本上线性的电流响应 到第二个VCO控制电压。 来自DVGC和V2I的电流被组合并馈送到电流控制的振荡器中,其产生PLL输出频率信号。 VCO的频率增益显着降低,从而提供具有改进的调谐精度的PLL。

    Phase-Locked Loop with Start-Up Circuit
    143.
    发明申请
    Phase-Locked Loop with Start-Up Circuit 有权
    带启动电路的锁相环

    公开(公告)号:US20100141346A1

    公开(公告)日:2010-06-10

    申请号:US12330952

    申请日:2008-12-09

    IPC分类号: H03L7/00 H03L7/06

    CPC分类号: H03L7/10 H03L7/0995

    摘要: A circuit includes a voltage-controlled oscillator (VCO), which includes a voltage input node having an input voltage; and a start-up circuit. The start-up circuit includes a first current path and a second current path. The first current path has a first current and is configured so that the first current increases in response to a decrease in the input voltage and decreases in response to an increase in the input voltage. The second current path has a second current and is configured so that the second current decreases in response to the decrease in the input voltage and decreases in response to the increase in the input voltage. The VCO further includes a third current path combining a first proportion of the first current and a second proportion of the second current into a combined current; and a current-controlled oscillator (CCO) including an input receiving the combined current and outputting an AC signal.

    摘要翻译: 电路包括压控振荡器(VCO),其包括具有输入电压的电压输入节点; 和启动电路。 启动电路包括第一电流路径和第二电流路径。 第一电流路径具有第一电流并且被配置为使得第一电流响应于输入电压的降低而增加,并且响应于输入电压的增加而减小。 第二电流路径具有第二电流并且被配置为使得第二电流响应于输入电压的降低而减小,并且响应于输入电压的增加而减小。 VCO还包括将第一电流的第一比例和第二电流的第二比例组合成组合电流的第三电流通路; 以及电流控制振荡器(CCO),其包括接收组合电流的输入并输出AC信号。

    Rotary switch
    145.
    发明授权
    Rotary switch 失效
    旋转开关

    公开(公告)号:US07629549B2

    公开(公告)日:2009-12-08

    申请号:US11980824

    申请日:2007-10-31

    IPC分类号: H01H19/00

    CPC分类号: H01H19/63

    摘要: A rotary switch includes a holder base holding two metal contact plates and one metal connection plate, a rotary handle vertically pivotally coupled to a pivot shaft of the holder base and rotatable relative to the holder base between a first position where a bottom recess of a circular actuating member of the rotary handle receives a respective electric connection portion of each metal contact plate and the electric connection portion of the metal connection plate contacts the electric connection portions of the metal contact plates and a second position where a protrusion of the circular actuating member forces the electric connection portion of one metal contact plate away from the metal connection plate to produce an electrical signal, and a torsion spring sleeved on the rotary handle with its two ends respective connected to the actuating member and the holder base for returning the rotary handle automatically after each rotary motion.

    摘要翻译: 旋转开关包括保持基座,其保持两个金属接触板和一个金属连接板,旋转手柄垂直地枢转地联接到保持器基座的枢轴并且可相对于保持器基座旋转,在第一位置和第二位置之间, 旋转手柄的致动构件接收每个金属接触板的相应电连接部分,并且金属连接板的电连接部分接触金属接触板的电连接部分和第二位置,其中圆形致动部件的突出部分 一个金属接触板的电连接部分远离金属连接板以产生电信号,以及一个套在旋转手柄上的扭力弹簧,其两端分别连接到致动构件和保持架底座,用于自动返回旋转手柄 每次旋转运动后。

    Signal coupling circuit and method
    146.
    发明授权
    Signal coupling circuit and method 有权
    信号耦合电路及方法

    公开(公告)号:US07586359B2

    公开(公告)日:2009-09-08

    申请号:US11493515

    申请日:2006-07-27

    申请人: Chien-Hung Chen

    发明人: Chien-Hung Chen

    IPC分类号: H03K17/00

    CPC分类号: H03K17/005

    摘要: The invention provides a signal coupling circuit and method for coupling an analog input signal to a processing circuit. The signal coupling circuit includes a number of first coupling units, a second coupling unit and a first multiplexer. The first coupling units are coupled to a first input terminal of the processing circuit, for respectively receiving a plurality of input signals. The first multiplexer is coupled between the first coupling units and the processing circuit for selecting one of the input signals and transmitting the selected input signal to the processing circuit. The second coupling unit is coupled to a second input terminal of the processing circuit, for receiving a common reference signal, wherein the processing circuit uses the common reference signal as reference for processing some or all of the input signals.

    摘要翻译: 本发明提供一种用于将模拟输入信号耦合到处理电路的信号耦合电路和方法。 信号耦合电路包括多个第一耦合单元,第二耦合单元和第一多路复用器。 第一耦合单元耦合到处理电路的第一输入端,用于分别接收多个输入信号。 第一多路复用器耦合在第一耦合单元和处理电路之间,用于选择输入信号之一并将所选择的输入信号发送到处理电路。 第二耦合单元耦合到处理电路的第二输入端,用于接收公共参考信号,其中处理电路使用公共参考信号作为用于处理部分或全部输入信号的参考。

    METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE
    147.
    发明申请
    METHOD FOR MANUFACTURING THIN FILM TRANSISTOR ARRAY SUBSTRATE 有权
    制造薄膜晶体管阵列基板的方法

    公开(公告)号:US20090142864A1

    公开(公告)日:2009-06-04

    申请号:US12369742

    申请日:2009-02-12

    IPC分类号: H01L21/02

    摘要: A method for manufacturing a thin film transistor (TFT) array substrate needs only or even less than six mask processes for manufacturing the TFT array substrate integrated with a color filter pattern. Therefore, the manufacturing method is simpler and the manufacturing cost is reduced. In addition, the manufacturing method needs not to form a contact window in a relative thick film layer such as a planarization layer or a color filter layer, so as to connect the pixel electrode to the source/drain. Thus, the difficulty of the manufacturing process is effectively reduced.

    摘要翻译: 制造薄膜晶体管(TFT)阵列基板的方法仅需要或甚至少于六个用于制造与滤色器图案集成的TFT阵列基板的掩模工艺。 因此,制造方法更简单,制造成本降低。 此外,制造方法不需要在诸如平坦化层或滤色器层的相对厚膜层中形成接触窗口,以将像素电极连接到源极/漏极。 因此,制造过程的难度有效降低。

    Method for Driving Field Sequential LCD Backlight
    148.
    发明申请
    Method for Driving Field Sequential LCD Backlight 有权
    驱动场顺序LCD背光的方法

    公开(公告)号:US20090122002A1

    公开(公告)日:2009-05-14

    申请号:US12124317

    申请日:2008-05-21

    IPC分类号: G02F1/133

    摘要: The present invention provides a method for driving a backlight module of a liquid crystal display. The backlight module includes three light sources, a first light source, a second light source, and a third light source, that illuminate different color light respectively. The method includes sequentially turning on the three light sources, wherein the first light source and the second light source are turned on twice and the third light source is turned on once.

    摘要翻译: 本发明提供一种用于驱动液晶显示器的背光模块的方法。 背光模块包括分别照亮不同颜色的光的三个光源,第一光源,第二光源和第三光源。 该方法包括顺序打开三个光源,其中第一光源和第二光源被打开两次,第三光源被打开一次。

    Method for fabricating SONOS a memory
    149.
    发明授权
    Method for fabricating SONOS a memory 有权
    制造SONOS存储器的方法

    公开(公告)号:US07498228B2

    公开(公告)日:2009-03-03

    申请号:US11775223

    申请日:2007-07-09

    IPC分类号: H01L21/336

    摘要: A method for fabricating a SONOS memory is disclosed. First, a semiconductor substrate is provided and a SONOS memory cell is formed on said semiconductor substrate. A passivation layer is deposited on the SONOS memory cell and a contact pad is formed on the passivation layer. Subsequently, an ultraviolet treatment is performed and an annealing process is conducted thereafter.

    摘要翻译: 公开了一种用于制造SONOS存储器的方法。 首先,提供半导体衬底,并且在所述半导体衬底上形成SONOS存储单元。 钝化层沉积在SONOS存储单元上,并且在钝化层上形成接触焊盘。 接着,进行紫外线处理,然后进行退火处理。

    METHOD FOR FABRICATING SONOS A MEMORY
    150.
    发明申请
    METHOD FOR FABRICATING SONOS A MEMORY 有权
    制造SONOS存储器的方法

    公开(公告)号:US20090017590A1

    公开(公告)日:2009-01-15

    申请号:US11775223

    申请日:2007-07-09

    IPC分类号: H01L21/336

    摘要: A method for fabricating a SONOS memory is disclosed. First, a semiconductor substrate is provided and a SONOS memory cell is formed on said semiconductor substrate. A passivation layer is deposited on the SONOS memory cell and a contact pad is formed on the passivation layer. Subsequently, an ultraviolet treatment is performed and an annealing process is conducted thereafter.

    摘要翻译: 公开了一种用于制造SONOS存储器的方法。 首先,提供半导体衬底,并且在所述半导体衬底上形成SONOS存储单元。 钝化层沉积在SONOS存储单元上,并且在钝化层上形成接触焊盘。 接着,进行紫外线处理,然后进行退火处理。