公开(公告)号：US20080119569A1

公开(公告)日：2008-05-22

申请号：US11878160

申请日：2007-07-20

Applicant: Steven G. Wright ,  Troy Christensen ,  Thean Yeoh ,  Michael E. Rickey ,  Joyce M. Hotz ,  Rajesh Kumar ,  Mark Fineman ,  Christine Smith ,  John Ong ,  David M. Lokensgard ,  Henry R. Costantino

Inventor： Steven G. Wright ,  Troy Christensen ,  Thean Yeoh ,  Michael E. Rickey ,  Joyce M. Hotz ,  Rajesh Kumar ,  Mark Fineman ,  Christine Smith ,  John Ong ,  David M. Lokensgard ,  Henry R. Costantino

IPC: A61K47/00

CPC classification number: A61K47/34 ,  A61K9/0002 ,  A61K9/1647 ,  A61K9/1694 ,  A61K9/5089 ,  A61K31/573 ,  A61K38/2278 ,  A61K38/26

Abstract: This invention relates to compositions for the sustained release of biologically active polypeptides, and methods of forming and using said compositions, for the sustained release of biologically active polypeptides. The sustained release compositions of this invention comprise a biocompatible polymer having dispersed therein, a biologically active polypeptide and a sugar.

公开(公告)号：US20070248022A1

公开(公告)日：2007-10-25

申请号：US11379312

申请日：2006-04-19

Applicant: Rajesh Kumar ,  Randall Ethier ,  Chelliah Sivachelvan ,  Robert Biskner

Inventor： Rajesh Kumar ,  Randall Ethier ,  Chelliah Sivachelvan ,  Robert Biskner

IPC: H04J1/16

CPC classification number: H04L41/5009 ,  H04L41/0604 ,  H04L43/00 ,  H04L43/06 ,  H04L43/0829 ,  H04L43/0852 ,  H04L43/087 ,  H04L43/16

Abstract: A method for alert throttling in media quality monitoring, includes monitoring a plurality of active communication sessions. Each active communication session is between at least two endpoints. The method also includes detecting at least one quality-impacted communication session out of the plurality of active communication sessions. The method also includes generating a first alert for each detected quality-impacted communication session out of the plurality of active communication sessions until a first throttling number of quality-impacted communication sessions is detected out of the plurality of active communication sessions. Upon detecting the first throttling number of quality-impacted communication sessions, the method includes generating a second alert for each group of additional second number of quality-impacted communication sessions detected out of the plurality of active communication sessions.

Abstract translation: 一种用于在媒体质量监测中进行警报节流的方法，包括监视多个主动通信会话。 每个活动通信会话在至少两个端点之间。 该方法还包括从多个主动通信会话中检测至少一个受质量影响的通信会话。 该方法还包括为多个活动通信会话中的每个检测到的受质量影响的通信会话生成第一警报，直到从多个主动通信会话中检测到受质量影响的通信会话的第一节流数量。 在检测到受质量影响的通信会话的第一节流数量时，该方法包括为从多个主动通信会话中检测到的对质量影响的通信会话的每组额外的第二数量生成第二警报。

公开(公告)号：US20070236850A1

公开(公告)日：2007-10-11

申请号：US11394810

申请日：2006-03-31

Applicant: Kelin Kuhn ,  Richard Hose ,  Edward Burton ,  Rajesh Kumar

Inventor： Kelin Kuhn ,  Richard Hose ,  Edward Burton ,  Rajesh Kumar

IPC: H02H3/22

CPC classification number: H01L27/088

Abstract: Power switch units for microelectronic devices are disclosed. In one aspect, a microelectronic device may include a functional circuit, and a power switch unit to switch power to the functional circuit on and off. The power switch unit may include a large number of transistors coupled together. The transistors may include predominantly positive-channel, insulated gate field effect transistors, which have a gate dielectric that includes a high dielectric constant material. Power switch units having such transistors may tend to have low power consumption. In an aspect, an overdrive voltage may be applied to the gates of such transistors to further reduce power consumption. Methods of overdriving such transistors and systems including such power switch units are also disclosed.

Abstract translation: 公开了用于微电子器件的功率开关单元。 一方面，微电子器件可以包括功能电路，以及电源开关单元，用于将功率电路接通和断开。 电源开关单元可以包括耦合在一起的大量晶体管。 晶体管可以包括主要为正沟道绝缘栅场效应晶体管，其具有包括高介电常数材料的栅极电介质。 具有这种晶体管的功率开关单元倾向于具有低功耗。 在一方面，可以将过驱动电压施加到这种晶体管的栅极，以进一步降低功耗。 还公开了过载驱动这种晶体管和包括这种功率开关单元的系统的方法。

公开(公告)号：US07250503B2

公开(公告)日：2007-07-31

申请号：US10631558

申请日：2003-07-31

Applicant: Girish Sahni ,  Rajesh Kumar ,  Chaiti Roy ,  Kammara Rajagopal ,  Deepak Nihalani ,  Vasudha Sundaram ,  Mahavir Yadav

Inventor： Girish Sahni ,  Rajesh Kumar ,  Chaiti Roy ,  Kammara Rajagopal ,  Deepak Nihalani ,  Vasudha Sundaram ,  Mahavir Yadav

IPC: C07H21/04 ,  C12N9/48 ,  C12P21/00 ,  C12P21/06

CPC classification number: C07K14/78 ,  A61K38/00 ,  C07K14/3153 ,  C07K19/00 ,  C07K2319/70

Abstract: The present invention provides polynucleotides encoding clot-specific streptokinase proteins possessing altered plasminogen characteristics, including enhanced fibrin selectivity. The kinetics of plasminogen activation by these proteins are distinct from those of natural streptokinase, in that there is a temporary delay or lag in the initial rate of catalytic conversion of plasminogen to plasmin. Also disclosed are processes for preparing the proteins.

Abstract translation: 本发明提供编码具有改变的纤溶酶原特征的凝块特异性链激酶蛋白质的多核苷酸，包括增强的纤维蛋白选择性。 这些蛋白质的纤溶酶原激活的动力学与天然链激酶的动力学不同，因为纤溶酶原对纤溶酶的催化转化的初始速率暂时延迟或滞后。 还公开了制备蛋白质的方法。

公开(公告)号：US20070151391A1

公开(公告)日：2007-07-05

申请号：US11553303

申请日：2006-10-26

Applicant: David Q. Larkin ,  Stephen J. Blumenkranz ,  Rajesh Kumar

Inventor： David Q. Larkin ,  Stephen J. Blumenkranz ,  Rajesh Kumar

IPC: B25J17/02

CPC classification number: A61B34/30 ,  A61B34/37 ,  A61B34/70 ,  A61B34/71 ,  A61B34/76 ,  A61B2034/2061 ,  A61B2034/305 ,  A61B2090/065 ,  Y10T74/20335

Abstract: A modular force sensor apparatus, method, and system are provided to improve force and torque sensing and feedback to the surgeon performing a telerobotic surgery. In one embodiment, a modular force sensor includes a tube portion including a plurality of strain gauges, a proximal tube portion for operably coupling to a shaft of a surgical instrument that may be operably coupled to a manipulator arm of a robotic surgical system, and a distal tube portion for proximally coupling to a wrist joint coupled to an end portion.

Abstract translation: 提供了一种模块式力传感器装置，方法和系统，以改善对外科医生执行远程外科手术的力和转矩检测和反馈。 在一个实施例中，模块化力传感器包括包括多个应变计的管部分，用于可操作地联接到外科器械的轴的近侧管部分，其可操作地联接到机器人手术系统的操纵臂，以及 用于向近侧联接到联接到端部的腕关节的远端管部分。

公开(公告)号：US07164154B2

公开(公告)日：2007-01-16

申请号：US10995566

申请日：2004-11-24

Applicant: Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Rashid Jeremy ,  Andrei Mihaila ,  Florin Udrea

Inventor： Rajesh Kumar ,  Yuichi Takeuchi ,  Mitsuhiro Kataoka ,  Suhail Rashid Jeremy ,  Andrei Mihaila ,  Florin Udrea

IPC: H01L29/15

CPC classification number: H01L29/8083 ,  H01L29/1608

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.

Abstract translation: 碳化硅半导体器件包括：包括第一和第二栅极层，沟道层，源极层和沟槽的半导体衬底; 栅极布线，具有第一部分和多个第二部分; 以及具有第三部分和多个第四部分的源极布线。 沟槽沿预定的延伸方向延伸。 第一部分连接到沟槽中的第一栅极层，并延伸到延伸方向。 第二部分垂直突出成为梳形。 第三部分延伸到延伸方向。 第四部分垂直突出成梳状，并且电连接到源层。 每个第二部分通过接触孔连接到第二栅极层。

公开(公告)号：US07163817B2

公开(公告)日：2007-01-16

申请号：US09940235

申请日：2001-08-27

Applicant: Girish Sahni ,  Rajesh Kumar ,  Chaiti Roy ,  Kammara Rajagopal ,  Deepak Nihalani ,  Vasudha Sundaram ,  Mahavir Yadav

Inventor： Girish Sahni ,  Rajesh Kumar ,  Chaiti Roy ,  Kammara Rajagopal ,  Deepak Nihalani ,  Vasudha Sundaram ,  Mahavir Yadav

IPC: C12N9/48 ,  C12P21/00 ,  C12P21/06

CPC classification number: C07K14/78 ,  A61K38/00 ,  C07K14/3153 ,  C07K19/00 ,  C07K2319/70

Abstract: The invention disclosed herein provides clot specific streptokinase proteins possessing altered plasminogen characteristics, including enhanced fibrin selectivity. The kinetics of plasminogen activation by these proteins are distinct from those of natural streptokinase, in that there is a temporary delay or lag in the initial rate of catalytic conversion of plasminogen to plasmin. Also disclosed are processes for preparing the proteins.

Abstract translation: 本文公开的本发明提供具有改变的纤溶酶原特征的凝血特异性链激酶蛋白，包括增强的纤维蛋白选择性。 这些蛋白质的纤溶酶原激活的动力学与天然链激酶的动力学不同，因为纤溶酶原对纤溶酶的催化转化的初始速率暂时延迟或滞后。 还公开了制备蛋白质的方法。

公开(公告)号：US20060279267A1

公开(公告)日：2006-12-14

申请号：US11152280

申请日：2005-06-14

Applicant: Edward Burton ,  Peter Hazucha ,  Gerhard Schrom ,  Rajesh Kumar ,  Shekhar Borkar

Inventor： Edward Burton ,  Peter Hazucha ,  Gerhard Schrom ,  Rajesh Kumar ,  Shekhar Borkar

IPC: G05F1/00

CPC classification number: H02M7/003

Abstract: In general, in one aspect, the disclosure describes a semiconductor device that includes a functional circuit and a dc-to-dc power converter. The power converter converts, regulates, and filters a DC input voltage to produce a DC output voltage and provides the DC output voltage to the functional circuit. The dc-to-dc power converter has an operating frequency above 10 MHz.

公开(公告)号：US20050139859A1

公开(公告)日：2005-06-30

申请号：US10984957

申请日：2004-11-10

Applicant: Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

Inventor： Rajesh Kumar ,  Andrei Mihaila ,  Florin Udrea

IPC: H01L29/80 ,  H01L21/04 ,  H01L21/337 ,  H01L29/24 ,  H01L29/808 ,  H01L29/06

CPC classification number: H01L29/1608 ,  H01L29/66068 ,  H01L29/8083 ,  Y10S438/931

Abstract: A silicon carbide semiconductor device includes a substrate and a junction field effect transistor. The transistor includes: a first semiconductor layer disposed on the substrate; a first gate layer disposed on a surface of the first semiconductor layer; a first channel layer adjacent to the first gate layer on the substrate; a first source layer connecting to the first channel layer electrically; a second gate layer adjacent to the first channel layer to sandwich the first channel layer; a second channel layer adjacent to the second gate layer to sandwich the second gate layer; a third gate layer adjacent to the second channel layer to sandwich the second channel layer; and a second source layer connecting to the second channel layer electrically.

Abstract translation: 碳化硅半导体器件包括衬底和结场效应晶体管。 晶体管包括：设置在基板上的第一半导体层; 设置在所述第一半导体层的表面上的第一栅极层; 与所述基板上的所述第一栅极层相邻的第一沟道层; 电连接到第一沟道层的第一源极层; 与所述第一沟道层相邻以夹住所述第一沟道层的第二栅极层; 与所述第二栅极层相邻以夹住所述第二栅极层的第二沟道层; 与所述第二沟道层相邻以夹住所述第二沟道层的第三栅极层; 以及电连接到第二沟道层的第二源极层。

公开(公告)号：US06855981B2

公开(公告)日：2005-02-15

申请号：US10230152

申请日：2002-08-29

Applicant: Rajesh Kumar ,  Hiroki Nakamura ,  Tsuyoshi Yamamoto ,  Toshiyuki Morishita

Inventor： Rajesh Kumar ,  Hiroki Nakamura ,  Tsuyoshi Yamamoto ,  Toshiyuki Morishita

IPC: H01L21/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/808 ,  H01L29/861 ,  H01L29/866 ,  H01L29/872 ,  H01L29/76

CPC classification number: H01L29/66992 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/866 ,  H01L29/872

Abstract: A silicon carbide power device includes a junction field effect transistor and a protective diode, which is a Zener or PN junction diode. The PN junction of the protective diode has a breakdown voltage lower than the PN junction of the transistor. Another silicon carbide power device includes a protective diode, which is a Schottky diode. The Schottky diode has a breakdown voltage lower than the PN junction of the transistor by adjusting Schottky barrier height or the depletion layer formed in the semiconductor included in the Schottky diode. Another silicon carbide power device includes three protective diodes, which are Zener diodes. Two of the protective diodes are used to clamp the voltages applied to the gate and the drain of the transistor due to surge energy and used to release the surge energy. The last diode is a thermo-sensitive diode, with which the temperature of the JFET is measured.

Abstract translation: 碳化硅功率器件包括结场效应晶体管和作为齐纳二极管或PN结二极管的保护二极管。 保护二极管的PN结的击穿电压低于晶体管的PN结。 另一种碳化硅功率器件包括一个保护二极管，它是肖特基二极管。 通过调整肖特基势垒高度或肖特基二极管中包含的半导体中形成的耗尽层，肖特基二极管的击穿电压低于晶体管的PN结。 另一种碳化硅功率器件包括三个保护二极管，它们是齐纳二极管。 两个保护二极管用于钳位由于浪涌能量施加到晶体管的栅极和漏极的电压，并用于释放浪涌能量。 最后一个二极管是热敏二极管，测量JFET的温度。