公开(公告)号：US07632779B1

公开(公告)日：2009-12-15

申请号：US12330866

申请日：2008-12-09

Applicant: Yi Ding ,  Rongyue Wang

Inventor： Yi Ding ,  Rongyue Wang

IPC: B01J23/48 ,  B01J23/50 ,  H01M8/10 ,  H01M4/00 ,  H01M4/88 ,  B32B15/01

CPC classification number: H01M8/1009 ,  C22C5/02 ,  C22C5/06 ,  H01M4/8803 ,  H01M4/8817 ,  H01M4/8846 ,  H01M4/921 ,  Y10T428/12875 ,  Y10T428/12889 ,  Y10T428/12896

Abstract: A method for preparing a catalyst comprising the steps of: providing a gold-silver alloy article, removing the silver from the article by immersing the article in a de-alloying solution to form a nanoporous gold (NPG) article with a plurality of nanopores followed by cleaning the surface of the NPG article and removing the de-alloying solution from the nanopores with deionized water. An electrode is attached to the NPG article and a monoatomic layer/lower layer of copper, silver, or lead, is deposited onto the surface of and within the nanopores of the NPG article by immersing the NPG article in an ion solution to form an M-NPG article. The M-NPG article is removed from the ion solution and the monoatomic/lower layer is replaced with platinum ions by immersing the M-NPG article into a platinum ion solution followed by cleaning the electrode and the NPG-Pt article with deionized water. A monoatomic layer/lower layer of copper, silver, or lead, is then deposited onto the surface of and within the nanopores of the NPG-Pt article by immersing the NPG-Pt article in an ion solution to form an M-NPG-Pt article. The M-NPG-Pt article is removed from the ion solution and the monoatomic/lower layer of copper, silver, or lead is replaced with gold ions by immersing the M-NPG-Pt article into a gold ion solution to form an NPG-Pt—Au article followed by cleaning the electrode and the NPG-Pt—Au article with deionized water.

Abstract translation: 一种制备催化剂的方法，包括以下步骤：提供金 - 银合金制品，通过将制品浸入脱合金溶液中以形成具有多个纳米孔的纳米多孔金（NPG）制品，从制品中除去银 通过清洁NPG制品的表面并用去离子水从纳米孔除去脱合金溶液。 通过将NPG制品浸入离子溶液中，将NPG制品上的电极连接到NPG制品上，并将铜，银或铅的单原子层/下层沉积在NPG制品的纳米孔的表面上和内部，形成M -NPG文章。 通过将M-NPG制品浸入铂离子溶液中，然后用去离子水清洗电极和NPG-Pt制品，从离子溶液中除去M-NPG制品，并用铂离子代替单原子/下层。 然后通过将NPG-Pt制品浸渍在离子溶液中以形成M-NPG-Pt，将NPG-Pt制品的纳米孔内和内部的铜，银或铅的单原子层/下层沉积 文章。 通过将M-NPG-Pt制品浸入金离子溶液中形成NPG-Pt制品，从离子溶液中除去M-NPG-Pt制品，铜，银或铅的单原子/下层被金离子代替， Pt-Au制品，然后用去离子水清洗电极和NPG-Pt-Au制品。

公开(公告)号：US07624182B2

公开(公告)日：2009-11-24

申请号：US11753468

申请日：2007-05-24

Applicant: Yi Ding

Inventor： Yi Ding

IPC: G06F15/16

CPC classification number: H04L67/16 ,  H04L67/02 ,  H04L69/18

Abstract: Techniques for supporting multiple service discovery protocols (SDPs) on a multi-functional peripheral (MFP) are provided. The MFP includes a plurality of SDP services, a plurality of SDP adapters, and a device service management system (DSMS). Each SDP service interfaces with one SDP adapter of the plurality of SDP adapters. Each SDP adapter interfaces with the DSMS. Each SDP adapter translates messages from its corresponding SDP service into a format the DSMS understands, and vice versa. The DSMS manages service metadata information about multiple services provided by the MFP. In response to a request, from a client, for metadata of one or more services provided by the MFP, a SDP service requests the metadata from its corresponding SDP adapter. The SDP adapter requests the metadata from the DSMS, which responds to the SDP adapter with the metadata. The SDP adapter sends the metadata to the SDP service, which sends the metadata to the client.

Abstract translation: 提供了在多功能外设（MFP）上支持多个服务发现协议（SDP）的技术。 MFP包括多个SDP服务，多个SDP适配器和设备服务管理系统（DSMS）。 每个SDP服务与多个SDP适配器的一个SDP适配器接口。 每个SDP适配器与DSMS接口。 每个SDP适配器将来自其对应的SDP服务的消息转换为DSMS所理解的格式，反之亦然。 DSMS管理由MFP提供的多个服务的服务元数据信息。 响应于来自客户端的针对由MFP提供的一个或多个服务的元数据的请求，SDP服务从其对应的SDP适配器请求元数据。 SDP适配器从DSMS请求元数据，DSMS使用元数据对SDP适配器进行响应。 SDP适配器将元数据发送到SDP服务，SDP服务将元数据发送给客户端。

公开(公告)号：US07578925B2

公开(公告)日：2009-08-25

申请号：US11297153

申请日：2005-12-07

Applicant: David Kubinski ,  Richard Soltis ,  Jaco Visser ,  Yi Ding ,  Michael Howard Parsons

Inventor： David Kubinski ,  Richard Soltis ,  Jaco Visser ,  Yi Ding ,  Michael Howard Parsons

IPC: G01N27/407

CPC classification number: G01N27/417

Abstract: A method of operating a gas sensor is disclosed, wherein the sensor includes a pumping electrode configuration and a measuring electrode configuration, and wherein the method includes operating the sensor in a first mode in which a first, lower pumping potential sufficient to electrochemically remove an interfering compound from the sensor without electrochemically removing the analyte from the sensor is applied across the pumping electrode configuration and a measuring potential sufficient to electrochemically remove the analyte from the sensor is applied across the measuring electrode configuration; and operating the sensor in a second mode in which a second, higher pumping potential sufficient to electrochemically remove the analyte from the sensor is applied to the pumping electrode configuration.

Abstract translation: 公开了一种操作气体传感器的方法，其中所述传感器包括泵送电极配置和测量电极配置，并且其中所述方法包括以第一模式操作所述传感器，其中第一较低的泵送电势足以电化学地去除干扰 来自传感器的化合物不经电化学去除传感器中的分析物跨越泵送电极配置，并且在测量电极配置上施加足以电化学去除传感器分析物的测量电位; 并且在第二模式下操作所述传感器，其中将第二较高泵送电势充分地电化学地从所述传感器中去除所述分析物到所述泵送电极配置。

公开(公告)号：US07312497B2

公开(公告)日：2007-12-25

申请号：US11143991

申请日：2005-06-02

Applicant: Yi Ding

Inventor： Yi Ding

IPC: H01L29/788

CPC classification number: H01L29/42344 ,  H01L21/28273 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11531

Abstract: In a nonvolatile memory, the select gates (144S) are formed from one conductive layer (e.g. polysilicon or polyside), and the wordlines (144) interconnecting the select gates are made from a different conductive layer (e.g. metal). The wordlines overlie an dielectric (302, 304, 310) formed over control gate lines (134). Each control gate line provides control gates for one column of the memory cells. The adjacent control gate lines for the adjacent memory columns are spaced from each other. The dielectric thickness can be controlled to reduce the capacitance between the wordlines and the control gates. In some embodiments, the floating gates (120) are fabricated in a self-aligned manner using an isotropic etch of the floating gate layer.

Abstract translation: 在非易失性存储器中，选择栅极（144S）由一个导电层（例如多晶硅或多边形）形成，并且互连选择栅极的字线（144）由不同的导电层（例如金属）制成。 字线覆盖在控制栅线（134）上形成的电介质（302,304,310）。 每个控制栅极线提供一列存储器单元的控制栅极。 用于相邻存储器列的相邻控制栅极线彼此间隔开。 可以控制电介质厚度以减小字线和控制门之间的电容。 在一些实施例中，使用浮动栅极层的各向同性蚀刻，以自对准的方式制造浮置栅极（120）。

公开(公告)号：US07294883B2

公开(公告)日：2007-11-13

申请号：US11174084

申请日：2005-06-30

Applicant: Yi Ding

Inventor： Yi Ding

IPC: H01L29/788

CPC classification number: H01L27/11526 ,  G11C16/0458 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11546

Abstract: In a nonvolatile memory cell (110), the select gate transistor is formed as a buried channel transistor to increase the transistor current.

Abstract translation: 在非易失性存储单元（110）中，选择栅极晶体管形成为埋入沟道晶体管以增加晶体管电流。

公开(公告)号：US07280717B2

公开(公告)日：2007-10-09

申请号：US10921561

申请日：2004-08-19

Applicant: Jun Su ,  Yi Ding

Inventor： Jun Su ,  Yi Ding

IPC: G02B6/12 ,  G02B6/26 ,  G02B6/42 ,  G02B6/34

CPC classification number: H04J14/0221

Abstract: An automatic shutdown system for optical multiplexers and demultiplexers includes an optical switch that is disposed in a common optical channel between a transmitter and a receiver of an optical communication system. The optical switch may attenuate or block a signal in the common optical channel during power-off conditions. The optical switch may also provide a low insertion loss and low polarization loss in the common optical channel during power-on conditions.

Abstract translation: 用于光复用器和解复用器的自动关闭系统包括光开关，其设置在光通信系统的发射机和接收机之间的公共光信道中。 在断电条件下，光开关可能衰减或阻断公共光通道中的信号。 在开机状态下，光开关还可以在公共光通道中提供低插入损耗和低极化损耗。

公开(公告)号：US20070187748A1

公开(公告)日：2007-08-16

申请号：US11740698

申请日：2007-04-26

Applicant: Chia-Shun Hsiao ,  Yi Ding

Inventor： Chia-Shun Hsiao ,  Yi Ding

IPC: H01L29/788

CPC classification number: H01L27/11521 ,  H01L27/115 ,  H01L27/11519 ,  H01L29/42328 ,  H01L29/66825

Abstract: Dielectric regions (210) are formed on a semiconductor substrate between active areas of nonvolatile memory cells. The top portions of the dielectric region sidewalls are etched to recess the top portions laterally away from the active areas. Then a conductive layer is deposited to form the floating gates (410). The recessed portions of the dielectric sidewalls allow the floating gates to be wider at the top. The gate coupling ratio is increased as a result. Other features are also provided.

Abstract translation: 电介质区域（210）形成在非易失性存储单元的有源区域之间的半导体衬底上。 蚀刻电介质区域侧壁的顶部以将顶部部分横向远离有源区域。 然后沉积导电层以形成浮栅（410）。 电介质侧壁的凹陷部分允许浮动栅极在顶部较宽。 结果，门耦合比增大。 还提供其他功能。

公开(公告)号：US07230295B2

公开(公告)日：2007-06-12

申请号：US11101754

申请日：2005-04-08

Applicant: Yi Ding

Inventor： Yi Ding

IPC: H01L29/76

CPC classification number: H01L27/11526 ,  G11C16/0458 ,  H01L21/28273 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11546 ,  H01L29/42328 ,  H01L29/66825 ,  H01L29/7883 ,  H01L29/7885 ,  H01L29/7887

Abstract: In a memory cell (110) having multiple floating gates (160), the select gate (140) is formed before the floating gates. In some embodiments, the memory cell also has control gates (170) formed after the select gate. Substrate isolation regions (220) are formed in a semiconductor substrate (120). The substrate isolation regions protrude above the substrate. Then select gate lines (140) are formed. Then a floating gate layer (160) is deposited. The floating gate layer is etched until the substrate isolation regions are exposed. A dielectric (164) is formed over the floating gate layer, and a control gate layer (170) is deposited. The control gate layer protrudes upward over each select gate line. These the control gates and the floating gates are defined independently of photolithographic alignment. In another aspect, a nonvolatile memory cell has at least two conductive floating gates (160). A dielectric layer (164) overlying the floating gate has a continuous feature that overlies the floating gate and also overlays a sidewall of the select gate (140). Each control gate (160) overlies the continuous feature of the dielectric layer and also overlies the floating gate. In another aspect, substrate isolation regions (220) are formed in a semiconductor substrate. Select gate lines cross over the substrate isolation regions. Each select gate line has a planar top surface, but its bottom surface goes up and down over the substrate isolation regions. Other features are also provided.

公开(公告)号：US20070125665A1

公开(公告)日：2007-06-07

申请号：US11297153

申请日：2005-12-07

Applicant: David Kubinski ,  Richard Soltis ,  Jacobus Visser ,  Yi Ding ,  Michael Parsons

Inventor： David Kubinski ,  Richard Soltis ,  Jacobus Visser ,  Yi Ding ,  Michael Parsons

IPC: G01N27/26 ,  G01F1/64

CPC classification number: G01N27/417

Abstract: A method of operating a gas sensor is disclosed, wherein the sensor includes a pumping electrode configuration and a measuring electrode configuration, and wherein the method includes operating the sensor in a first mode in which a first, lower pumping potential sufficient to electrochemically remove an interfering compound from the sensor without electrochemically removing the analyte from the sensor is applied across the pumping electrode configuration and a measuring potential sufficient to electrochemically remove the analyte from the sensor is applied across the measuring electrode configuration; and operating the sensor in a second mode in which a second, higher pumping potential sufficient to electrochemically remove the analyte from the sensor is applied to the pumping electrode configuration.

Abstract translation: 公开了一种操作气体传感器的方法，其中所述传感器包括泵送电极配置和测量电极配置，并且其中所述方法包括以第一模式操作所述传感器，其中第一较低的泵送电势足以电化学地去除干扰 来自传感器的化合物不经电化学去除传感器中的分析物跨越泵送电极配置，并且在测量电极配置上施加足以电化学去除传感器分析物的测量电位; 并且在第二模式下操作所述传感器，其中将第二较高泵送电势充分地电化学地从所述传感器中去除所述分析物到所述泵送电极配置。

公开(公告)号：US07221125B2

公开(公告)日：2007-05-22

申请号：US10702813

申请日：2003-11-06

Applicant: Yi Ding

Inventor： Yi Ding

IPC: H02J7/04

CPC classification number: H02J7/0093

Abstract: A system and method for charging a battery is provided. The method includes applying an excitation current pulse to the battery to determine the battery type and whether the battery is capable of holding a charge. To charge the battery, a series of current pulses are applied in groups with the average current being reduced for each succeeding group to take advantage of changing battery charge acceptance. When the voltage of the battery matches a predetermined value, application of the current pulse groups is ended. A single current pulse is then applied to complete the battery charge.

Abstract translation: 提供一种用于对电池充电的系统和方法。 该方法包括向电池施加激励电流脉冲以确定电池类型以及电池是否能够保持电荷。 为了对电池充电，对于每个后续组，一组电流脉冲以平均电流减小的方式被组合，以利用改变电池充电的接受程度。 当电池的电压匹配预定值时，结束当前脉冲组的施加。 然后施加单个电流脉冲来完成电池充电。