公开(公告)号：US20130038403A1

公开(公告)日：2013-02-14

申请号：US13571739

申请日：2012-08-10

申请人： Eric Colleoni ,  Hilal Ezzeddine

发明人： Eric Colleoni ,  Hilal Ezzeddine

IPC分类号： H01P5/18

CPC分类号： H01P5/10 ,  H01P5/16 ,  H01P5/18 ,  H04B3/30 ,  H04L25/0272

摘要： A distributed differential coupler, including a first conductive line and two second conductive lines coupled to the first one, each second conductive line including two conductive sections electrically in series, their respective junctions points being intended to be grounded.

摘要翻译： 分布式差分耦合器，包括耦合到第一导线和第二导线的第一导线和第二导线，每个第二导线包括两个电串联的导电部分，它们各自的接点用于接地。

公开(公告)号：US20120161198A1

公开(公告)日：2012-06-28

申请号：US13326686

申请日：2011-12-15

申请人： Yannick Hague ,  Samuel Menard

发明人： Yannick Hague ,  Samuel Menard

IPC分类号： H01L29/87

CPC分类号： H01L29/0661 ,  H01L29/0626 ,  H01L29/0638 ,  H01L29/0834 ,  H01L29/747 ,  H01L29/87

摘要： A mesa-type bidirectional Shockley diode including a substrate of a first conductivity type; a layer of the second conductivity type on each side of the substrate; a region of the first conductivity type in each of the layers of the second conductivity type; a buried region of the first conductivity type under each of said regions of the first conductivity type, each buried region being complementary in projection with the other; and a groove arranged in the vicinity of the periphery of the component on each of its surfaces, the component portion external to the groove comprising, under the external portion of the upper and lower regions of the second conductivity type, regions of the first conductivity type of same doping profile as said buried regions.

摘要翻译： 包括第一导电类型的衬底的台面型双向Shockley二极管; 在基板的每一侧上具有第二导电类型的层; 在第二导电类型的每个层中的第一导电类型的区域; 在第一导电类型的每个所述区域的每一个下的第一导电类型的掩埋区域，每个掩埋区域与另一个的突出互补; 以及在其每个表面上在所述部件的周边附近布置的槽，所述槽外部的所述部件部分包括在所述第二导电类型的上部和下部区域的外部部分处的所述第一导电类型的区域 与所述掩埋区域具有相同的掺杂特性。

公开(公告)号：US20120155138A1

公开(公告)日：2012-06-21

申请号：US13326849

申请日：2011-12-15

申请人： Laurent GONTHIER ,  Antoine PASSAL

发明人： Laurent GONTHIER ,  Antoine PASSAL

IPC分类号： H02M7/06

CPC分类号： H02M7/062 ,  H02H9/001 ,  H02M7/125

摘要： A capacitive power supply including: a first capacitive element and a first resistive element in series between a first terminal of a power switch and at least one rectifying element having a second terminal connected to a first electrode of at least one second capacitive element for providing a D.C. voltage; and a bidirectional switch in parallel on the resistor.

摘要翻译： 一种电容性电源，包括：电源开关的第一端子与至少一个整流元件串联的第一电容元件和第一电阻元件，所述第一电容元件具有连接到至少一个第二电容元件的第一电极的第二端子，用于提供 直流电压; 和电阻上的并联双向开关。

公开(公告)号：US20120087052A1

公开(公告)日：2012-04-12

申请号：US13242928

申请日：2011-09-23

申请人： Jan Dreser ,  Laurent Gonthier

发明人： Jan Dreser ,  Laurent Gonthier

IPC分类号： H02H3/08 ,  G01R19/00

CPC分类号： G01R19/16571

摘要： A method comprising: a) during at least part of a conduction phase of the triac, measuring the gate potential of the triac; and b) comparing a value based on said measurement with a reference threshold and deducing the presence or the absence of an overcurrent based on said comparison.

摘要翻译： 一种方法，包括：a）在三端双向串联的传导阶段的至少一部分期间，测量三端双向可控硅开关元件的栅极电位; 以及b）将基于所述测量的值与参考阈值进行比较，并且基于所述比较推断过电流的存在或不存在。

公开(公告)号：US20120061719A1

公开(公告)日：2012-03-15

申请号：US13210830

申请日：2011-08-16

申请人： Samuel Menard ,  Yannick Hague

发明人： Samuel Menard ,  Yannick Hague

IPC分类号： H01L29/87 ,  H01L21/332

CPC分类号： H01L29/66121 ,  H01L23/62 ,  H01L29/87 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Shockley diode including: a vertical stack of first to fourth layers of alternated conductivity types between first and second electrodes; a recess formed in the fourth layer and extending vertically to penetrate into the second layer; a first region of same conductivity type as the second layer but of greater doping level, extending at the bottom of the recess in the second layer; and a second region of same conductivity type as the third layer but of greater doping level, extending along the lateral walls of the recess and connecting the first region to the fourth layer.

摘要翻译： 一种Shockley二极管，包括：在第一和第二电极之间的交替导电类型的第一至第四层的垂直堆叠; 形成在第四层中并垂直延伸以渗入第二层的凹陷; 与第二层相同的导电类型的第一区域，但具有较大的掺杂水平的第一区域，在第二层的凹槽的底部延伸; 以及与所述第三层相同的导电类型的第二区域，但具有较大的掺杂水平，沿所述凹槽的侧壁延伸并将所述第一区域连接到所述第四层。

公开(公告)号：US20120019211A1

公开(公告)日：2012-01-26

申请号：US13223920

申请日：2011-09-01

申请人： Frédéric Cantin

发明人： Frédéric Cantin

IPC分类号： H02J7/00

CPC分类号： H02J7/0063 ,  H02J7/0075

摘要： A method for protecting a thin-layer battery connected to an intermittent load including the steps of periodically operating the battery at its maximum discharge current, and disconnecting the battery as soon as the voltage across it reaches a threshold value greater than its critical voltage for the maximum discharge current.

摘要翻译： 一种用于保护连接到间歇负载的薄层电池的方法，包括以其最大放电电流周期性地操作电池的步骤，并且一旦其两端的电压达到大于其临界电压的阈值，则断开电池 最大放电电流。

公开(公告)号：US20120001298A1

公开(公告)日：2012-01-05

申请号：US13067800

申请日：2011-06-28

申请人： Hideaki Sakurai ,  Toshiaki Watanabe ,  Nobuyuki Soyama ,  Guillaume Guegan

发明人： Hideaki Sakurai ,  Toshiaki Watanabe ,  Nobuyuki Soyama ,  Guillaume Guegan

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L28/60 ,  B82Y30/00 ,  C04B35/4682 ,  C04B2235/3213 ,  C04B2235/441 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/787 ,  H01G4/01 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02282 ,  H01L28/55 ,  H01L28/65

摘要： A thin film capacitor is characterized by forming a lower electrode, coating a composition onto the lower electrode without applying an annealing process having a temperature of greater than 300° C., drying at a predetermined temperature within a range from ambient temperature to 500° C., and calcining at a predetermined temperature within a range of 500 to 800° C. and higher than a drying temperature. The process from coating to calcining is performed the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode and the thickness of the dielectric thin film formed after the initial calcining step (thickness of lower electrode/thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0.

摘要翻译： 薄膜电容器的特征在于形成下电极，在不施加温度大于300℃的退火工艺的情况下将组合物涂覆在下电极上，在从环境温度至500℃的范围内的预定温度下干燥 并在500〜800℃的范围内的预定温度下煅烧并高于干燥温度。 从涂覆到煅烧的过程进行从涂覆到煅烧一次或至少两次的过程，或者从涂覆到干燥的过程进行至少两次，然后进行一次煅烧。 在第一次煅烧后形成的电介质薄膜的厚度为20〜600nm。 初始煅烧步骤后形成的下部电极的厚度与电介质薄膜的厚度之比（下部电极的厚度/电介质薄膜的厚度）优选在0.10〜15.0的范围内。

公开(公告)号：US20110304014A1

公开(公告)日：2011-12-15

申请号：US13155533

申请日：2011-06-08

申请人： Claire Laporte ,  Hilal Ezzeddine

发明人： Claire Laporte ,  Hilal Ezzeddine

IPC分类号： H01L29/02 ,  H01L21/02 ,  H01L29/92

CPC分类号： H01L28/10 ,  H01L23/5223 ,  H01L23/5227 ,  H01L24/05 ,  H01L27/016 ,  H01L28/60 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/19011 ,  H03H5/02 ,  H01L2224/13099 ,  H01L2224/05552 ,  H01L2924/00

摘要： A passive integrated circuit formed on a substrate, including contact areas of a conductive material specifically capable of receiving bonding pads, wherein the conductive material further creates connections between regions of a lower metallization level.

摘要翻译： 形成在基板上的无源集成电路，包括特别能够接收焊盘的导电材料的接触区域，其中导电材料进一步产生较低金属化水平的区域之间的连接。

公开(公告)号：US20110199100A1

公开(公告)日：2011-08-18

申请号：US12960303

申请日：2010-12-03

申请人： Sylvain Charley ,  François Dupont ,  Benoît Bonnet

发明人： Sylvain Charley ,  François Dupont ,  Benoît Bonnet

IPC分类号： G01R27/28

CPC分类号： H04B1/0458 ,  G01R31/2822

摘要： A method and circuit for evaluating a charge impedance at the output of a directional coupling having a first line adapted to convey a wanted signal between a first terminal and a second terminal adapted to be connected to an antenna, and having a second line coupled to the first one including a third terminal on the side of the first terminal and a fourth terminal on the side of the second terminal, wherein the signal present on the fourth terminal is submitted to a homodyne detector having its local oscillator signal sampled from the third terminal.

摘要翻译： 一种用于评估在具有适于在适于连接到天线的第一端子和第二端子之间传送有用信号的第一线的定向耦合的输出处的充电阻抗的方法和电路，并且具有耦合到所述第二线路的第二线路 第一端包括第一端子侧的第三端子和第二端子侧的第四端子，其中存在于第四端子上的信号被提交给具有从第三端子采样的本地振荡器信号的零差检测器。

公开(公告)号：US20110121429A1

公开(公告)日：2011-05-26

申请号：US12946992

申请日：2010-11-16

申请人： Benjamin Morillon

发明人： Benjamin Morillon

IPC分类号： H01L29/866 ,  H01L21/329

CPC分类号： H01L29/8618 ,  H01L29/6609 ,  H01L29/66106 ,  H01L29/866

摘要： A vertical bidirectional protection diode including, on a heavily-doped substrate of a first conductivity type, first, second, and third regions of the first, second, and first conductivity types, these regions all having a doping level greater than from 2 to 5×1019 atoms/cm3 and being laterally delimited by an insulated trench, each of these regions having a thickness smaller than 4 μm.

摘要翻译： 垂直双向保护二极管包括在第一导电类型的重掺杂衬底上的第一，第二和第一导电类型的第一，第二和第三区域，这些区域都具有大于2至5的掺杂水平 ×1019原子/ cm3，并且由绝缘沟槽横向界定，这些区域中的每一个具有小于4μm的厚度。