公开(公告)号：US07570236B2

公开(公告)日：2009-08-04

申请号：US11560562

申请日：2006-11-16

Applicant: Min-Koo Han ,  Jae-hoon Lee

Inventor： Min-Koo Han ,  Jae-hoon Lee

IPC: G09G3/32

CPC classification number: G09G3/3233 ,  G09G3/325 ,  G09G3/3291 ,  G09G2300/0426 ,  G09G2300/0465 ,  G09G2300/0809 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0866 ,  G09G2310/0262 ,  G09G2310/06 ,  G09G2320/043

Abstract: A display device for compensating for degradation of a threshold voltage of a driving thin-film transistor (“TFT”) and method for driving the display device includes a light-emitting element, wherein the light-emitting element emits light by a driving current applied thereto, a driving TFT controlling the magnitude of the driving current directed to the light-emitting element, a capacitor which charges a voltage which varies depending on a data voltage and a threshold voltage of the driving TFT and maintains a voltage corresponding to a difference between the data voltage and a gate voltage of the driving TFT, a first switching unit supplying the data voltage to the capacitor in response to a scan signal, and a second switching unit which is diode-connected and supplies the driving TFT with a light emitting signal.

Abstract translation: 用于补偿驱动薄膜晶体管（“TFT”）的阈值电压劣化的显示装置和驱动显示装置的方法包括发光元件，其中发光元件通过施加的驱动电流发光 控制针对发光元件的驱动电流的大小的驱动TFT，对根据数据电压和驱动TFT的阈值电压而变化的电压进行充电的电容器，并保持对应于 驱动TFT的数据电压和栅极电压，响应于扫描信号将数据电压提供给电容器的第一开关单元和二极管连接的第二开关单元，并向驱动TFT提供发光信号 。

公开(公告)号：US20090075412A1

公开(公告)日：2009-03-19

申请号：US12271464

申请日：2008-11-14

Applicant: Jae Hoon LEE ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

Inventor： Jae Hoon LEE ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

IPC: H01L33/00

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/32

Abstract: A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.

Abstract translation: 提供了垂直III族氮化物发光器件及其制造方法。 发光器件包括：导电衬底; 层叠在导电性基板上的p型覆层; 堆叠在p型覆盖层上的有源层; 层叠在有源层上的n掺杂Al x Ga y In 1-x-y N层; 堆叠在n掺杂层上的未掺杂的GaN层; 以及形成在未掺杂的GaN层上的n电极。 未掺杂的GaN层在其顶表面上形成粗糙图案。

公开(公告)号：US07485482B2

公开(公告)日：2009-02-03

申请号：US11401329

申请日：2006-04-11

Applicant: Jae Hoon Lee ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

Inventor： Jae Hoon Lee ,  Yong Chun Kim ,  Hyung Ky Back ,  Moon Heon Kong ,  Dong Woo Kim

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L33/007 ,  H01L33/20 ,  H01L33/405 ,  H01L2933/0083

Abstract: The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.

Abstract translation: 本发明提供一种提高外部提取效率的垂直III族氮化物发光器件及其制造方法。 该方法包括在碱性衬底上形成未掺杂的GaN层和绝缘层。 然后，选择性地蚀刻绝缘层以形成绝缘图案，并且在绝缘层上依次形成n掺杂的Al x Ga y In 1（1-xy）N层，有源层和p掺杂的AlmGanIn（1-m）N层 模式。 在p掺杂的AlmGanIn（1-m-n）N层上形成导电性基板。 去除基本衬底，未掺杂的GaN层和绝缘图案，并且在n掺杂Al x Ga y In（1-x-y）N层的暴露表面的一部分上形成n电极。

公开(公告)号：US07442569B2

公开(公告)日：2008-10-28

申请号：US11878503

申请日：2007-07-25

Applicant: Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

Inventor： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC: H01L21/00 ,  H01L29/22

CPC classification number: H01L33/14 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32

Abstract: Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

Abstract translation: 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED包括n电极。 在n电极下形成AlGaN层。 在AlGaN层下形成未掺杂的GaN层，以向AlGaN层的结界面提供二维电子气层。 GaN基LED结构包括依次形成在未掺杂的GaN层下面的n型GaN层，有源层和p型GaN层。 在GaN基LED结构下方形成p电极。 导电性基板形成在p电极的下方。

公开(公告)号：US20080233152A1

公开(公告)日：2008-09-25

申请号：US11955076

申请日：2007-12-12

Applicant: Jacob M. Waugh ,  Jae Hoon Lee

Inventor： Jacob M. Waugh ,  Jae Hoon Lee

IPC: A61K39/08

CPC classification number: A61K47/42 ,  A61K9/0014 ,  A61K38/164 ,  Y02A50/469

Abstract: This invention relates to novel compositions of borulinum toxin that are stabilized using HIV-TAT fragments or derivatives of HIV-TAT fragments. The composition can be administered for various therapeutic, aesthetic and/or cosmetic purposes. The invention also provides method for stabilizing botulinum toxin using HIV-TAT fragments or derivatives or HIV-TAT fragments.

Abstract translation: 本发明涉及使用HIV-TAT片段或HIV-TAT片段的衍生物稳定的骨肉毒素的新型组合物。 组合物可以用于各种治疗，美学和/或美容目的。 本发明还提供使用HIV-TAT片段或衍生物或HIV-TAT片段稳定肉毒杆菌毒素的方法。

公开(公告)号：US20080226551A1

公开(公告)日：2008-09-18

申请号：US11954885

申请日：2007-12-12

Applicant: Jacob M. Waugh ,  Jae Hoon Lee

Inventor： Jacob M. Waugh ,  Jae Hoon Lee

IPC: A61K51/00 ,  C07K7/00 ,  C12N11/02 ,  A61P43/00 ,  A61K49/00 ,  C07H21/00

CPC classification number: A61K47/645

Abstract: This invention relates to novel transport molecules that comprise a polypeptide comprising amino acid residues arranged in a sequence that is the reverse-sequence of basic portion of the HIV-TAT protein. The novel transport polypeptides are useful for transmembrane or intracellular delivery of cargo molecules, non-limiting examples of which include polypeptides and nucleic acids. The novel transport polypeptides may be covalently or non-covalently bound to the cargo modules.

Abstract translation: 本发明涉及包含多肽的新型转运分子，所述多肽包含以与HIV-TAT蛋白质的基本部分相反的序列排列的氨基酸残基。 新型转运多肽可用于货物分子的跨膜或细胞内递送，其非限制性实例包括多肽和核酸。 新型运输多肽可以共价或非共价结合到货物模块。

公开(公告)号：US07400001B2

公开(公告)日：2008-07-15

申请号：US10998942

申请日：2004-11-30

Applicant: Jae Hoon Lee ,  Jung Hee Lee

Inventor： Jae Hoon Lee ,  Jung Hee Lee

IPC: H01L29/778

CPC classification number: H01L29/7787 ,  H01L29/2003

Abstract: A nitride based hetero-junction field effect transistor includes a high resistance nitride semiconductor layer formed on a substrate, an Al-doped GaN layer formed on the high resistance nitride semiconductor layer and having an Al content of 0.1˜1%, an undoped GaN layer formed on the Al-doped GaN layer, and an AlGaN layer formed on the undoped GaN layer such that a two-dimensional electron gas (2DEG) layer is formed at an interface of the undoped GaN layer.

Abstract translation: 氮化物基异质结场效应晶体管包括形成在衬底上的高电阻氮化物半导体层，形成在高电阻氮化物半导体层上且Al含量为0.1〜1％的Al掺杂GaN层，未掺杂的GaN层 形成在Al掺杂GaN层上的AlGaN层和形成在未掺杂的GaN层上的AlGaN层，使得在未掺杂的GaN层的界面处形成二维电子气（2DEG）层。

公开(公告)号：US07394441B2

公开(公告)日：2008-07-01

申请号：US11269293

申请日：2005-11-08

Applicant: Jae-Hoon Lee

Inventor： Jae-Hoon Lee

IPC: G09G3/30 ,  G09G3/10

CPC classification number: G09G3/3283 ,  G09G2310/0248 ,  G09G2310/027 ,  G09G2310/0289

Abstract: There is provided a display apparatus including a data drive IC. The data drive IC includes a current-mode analog to digital converter (DAC) comprising a plurality of dynamic circuits (instead of conventional level shifters). In response to an enable signal received, each of the dynamic circuits convert a bit of an image data signal received from a signal input circuit into a high voltage level and outputs the resulting signal to a current switch that outputs current to a current node connected to a pixel. The data drive IC including the dynamic circuit has reduced chip area and reduced power consumption (compared to conventional ones comprising a plurality of level-shifters).

Abstract translation: 提供了一种包括数据驱动IC的显示装置。 数据驱动IC包括包括多个动态电路（而不是常规电平转换器）的电流模式模数转换器（DAC）。 响应于接收的使能信号，每个动态电路将从信号输入电路接收的图像数据信号的一位转换为高电压电平，并将所得到的信号输出到电流开关，该电流开关将电流输出到连接到 一个像素 包括动态电路的数据驱动IC具有减少的芯片面积和降低的功耗（与包括多个电平移位器的传统IC相比）。

公开(公告)号：US20080133991A1

公开(公告)日：2008-06-05

申请号：US11945352

申请日：2007-11-27

Applicant: Jae-Hoon Lee

Inventor： Jae-Hoon Lee

IPC: G06F11/25

CPC classification number: G01R31/31715 ,  G01R31/318572

Abstract: Noise may cause malfunction and reduction of yield in semiconductor devices operating with a low supply voltage, and a logic test is generally performed for testing characteristics of input/output pads. In the logic test, High Level Input Voltage (VIH), Low Level Input Voltage (VIL), and Input Signal Fault Detection may be considered. In a normal operation mode, the noise propagates through a logic chain by toggling of the test logic circuit, and a circuit can prevent the noise propagation using logical operations. Thus, a characteristic degradation due to the noise propagation may be reduced.

Abstract translation: 在低电源电压下工作的半导体器件的噪声可能导致误动作和降低产量，通常执行逻辑测试以测试输入/输出焊盘的特性。 在逻辑测试中，可以考虑高电平输入电压（VIH），低电平输入电压（VIL）和输入信号故障检测。 在正常工作模式下，通过切换测试逻辑电路，噪声通过逻辑链传播，电路可以通过逻辑运算来防止噪声传播。 因此，由于噪声传播引起的特性劣化可能降低。

公开(公告)号：US20080117961A1

公开(公告)日：2008-05-22

申请号：US11974402

申请日：2007-10-12

Applicant: Shuangfeng Han ,  Seong-Taek Hwang ,  Hoon Kim ,  Sang-Ho Kim ,  Jae-Hun Cho ,  Jae-Hoon Lee ,  Ki-Uk Song

Inventor： Shuangfeng Han ,  Seong-Taek Hwang ,  Hoon Kim ,  Sang-Ho Kim ,  Jae-Hun Cho ,  Jae-Hoon Lee ,  Ki-Uk Song

IPC: H04L27/00

CPC classification number: H04W52/42 ,  H04B7/043 ,  H04B7/0617 ,  H04B7/0691 ,  H04L1/0625 ,  H04L1/0668 ,  H04W52/04

Abstract: Disclosed is an apparatus and method for adaptively allocating transmission power for beamforming combined with orthogonal space-time block codes (OSTBC) in a distributed wireless communication system, the apparatus comprising: a plurality of sub-arrays for beamforming, which are geographically distributed and each of which comprises a plurality of distributed antennas placed in random groups; and a central processing unit for identifying performances of subsets by applying a predetermined power allocation scheme according to subsets which can be obtained by combining the sub-arrays, by means of a Nakagami fading parameter and information about large-scale fading of each of the sub-arrays, fed back from a receiving party, for determining a subset having a best performance as an optimal subset according to the identified performances, and for performing power allocation based on the subset set as the optimal subset.

Abstract translation: 公开了一种用于在分布式无线通信系统中自适应地分配与正交空时块码（OSTBC）组合的波束成形的发射功率的装置和方法，该装置包括：多个用于波束成形的子阵列，其在地理上分布并且每个 其中包括放置在随机组中的多个分布式天线; 以及中央处理单元，用于通过应用根据可以通过组合子阵列获得的子集的预定功率分配方案，通过Nakagami衰落参数和关于每个子级的大规模衰落的信息来应用子集的性能 - 从接收方反馈的用于根据所识别的性能确定具有最佳性能的子集作为最佳子集的子阵列，以及用于基于所述子集作为所述最佳子集执行功率分配。