公开(公告)号：US20240379741A1

公开(公告)日：2024-11-14

申请号：US18779549

申请日：2024-07-22

Applicant: STMicroelectronics PTE LTD

Inventor： Yean Ching YONG

IPC: H01L29/06 ,  H01L21/477 ,  H01L21/762 ,  H01L29/51 ,  H01L29/78

Abstract: An integrated circuit includes a polysilicon region that is doped with a dopant. A portion of the polysilicon region is converted to a polyoxide region which includes un-oxidized dopant ions. A stack of layers overlies over the polyoxide region. The stack of layers includes: a first ozone-assisted sub-atmospheric pressure thermal chemical vapor deposition (O3 SACVD) TEOS layer; and a second O3 SACVD TEOS layer; wherein the first and second O3 SACVD TEOS layers are separated from each other by a dielectric region. A thermally annealing is performed at a temperature which induces outgassing of passivation atoms from the first and second O3 SACVD TEOS layers to migrate to passivate interface charges due to the presence of un-oxidized dopant ions in the polyoxide region.

公开(公告)号：US20240282881A1

公开(公告)日：2024-08-22

申请号：US18649789

申请日：2024-04-29

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Jing-En LUAN

IPC: H01L31/12 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/18

CPC classification number: H01L31/12 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/186

Abstract: The present disclosure is directed to a sensor die with an embedded light sensor and an embedded light emitter as well as methods of manufacturing the same. The light emitter in the senor die is surrounded by a resin. The sensor die is incorporated into semiconductor device packages as well as methods of manufacturing the same. The semiconductor device packages include a first optically transmissive structure on the light sensor of the sensor die and a second optically transmissive structure on the light emitter of the sensor die. The first optically transmissive structure and the second optically transmissive structure cover and protect the light sensor and the light emitter, respectively. A molding compound is on a surface of a sensor die and covers sidewalls of the first and second optically transmissive structures on the sensor die.

公开(公告)号：US11988743B2

公开(公告)日：2024-05-21

申请号：US18055138

申请日：2022-11-14

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Jing-En Luan ,  Jerome Teysseyre

IPC: G01S17/04 ,  G01S7/481 ,  H01L25/16 ,  H01L31/173

CPC classification number: G01S17/04 ,  G01S7/4813 ,  H01L25/167 ,  H01L31/173 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/92227 ,  H01L2224/97 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00

Abstract: A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.

公开(公告)号：US20240128203A1

公开(公告)日：2024-04-18

申请号：US18369441

申请日：2023-09-18

Applicant: STMicroelectronics PTE LTD

Inventor： Jing-En LUAN

IPC: H01L23/00 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/78 ,  H01L23/36 ,  H01L23/48

CPC classification number: H01L23/562 ,  H01L21/3065 ,  H01L21/76898 ,  H01L21/78 ,  H01L23/36 ,  H01L23/481 ,  H01L24/03 ,  H01L24/16 ,  H01L2224/0346 ,  H01L2224/16145 ,  H01L2224/16227

Abstract: A method of manufacturing a chip-sized package includes providing a wafer having a die area formed therein adjacent a front face thereof, with the die area having pads formed thereon. Vias in the wafer are formed to extend between a back face of the wafer and a back side of some of the pads of the die area. Solder pads connected to the vias are formed, and a thermal pad is formed on the back side of the wafer opposite to the die area. Cavities are formed in the back face of the wafer to define pillars extending outwardly from a planar portion of the die area, some of the pillars having the solder pads at a distal end thereof, at least one of the pillars having the thermal pad at a distal end thereof. The wafer is singulated to form a chip-sized package including an integrated circuit die.

公开(公告)号：US11808723B2

公开(公告)日：2023-11-07

申请号：US17236750

申请日：2021-04-21

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Malek Brahem ,  Hatem Majeri ,  Olivier Le Neel ,  Ravi Shankar

IPC: G01N27/12 ,  G01N33/00

CPC classification number: G01N27/123 ,  G01N27/125 ,  G01N33/0031 ,  G01N33/0047 ,  G01N33/0065 ,  G01N33/0075

Abstract: The present disclosure is directed to a gas sensor device that includes a plurality of gas sensors. Each of the gas sensors includes a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. Each of the SMO films is designed to be sensitive to a different gas concentration range. As a result, the gas sensor device is able to obtain accurate readings for a wide range of gas concentration levels. In addition, the gas sensors are selectively activated and deactivated based on a current gas concentration detected by the gas sensor device. Thus, the gas sensor device is able to conserve power as gas sensors are on when appropriate instead of being continuously on.

公开(公告)号：US11721657B2

公开(公告)日：2023-08-08

申请号：US16874392

申请日：2020-05-14

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Jing-En Luan

IPC: H01L23/00 ,  H01L23/498

CPC classification number: H01L24/14 ,  H01L23/49816

Abstract: A wafer level chip scale package (WLCSP) with portions that have different thicknesses. A first passive surface of a die in the WLSCP includes a plurality of surfaces. The plurality of surfaces may include inclined surfaces or flat surfaces. Thicker portions of die, with more semiconductor material remaining are non-critical portions that increase a WLCSP's strength for further processing and handling after formation, and the thinner portions are critical portions that reduce a Coefficient of Thermal Expansion (CTE) mismatch between a WLCSP and a PCB.

公开(公告)号：US20230230949A1

公开(公告)日：2023-07-20

申请号：US18153937

申请日：2023-01-12

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Yong CHEN ,  David GANI

IPC: H01L23/00

CPC classification number: H01L24/24 ,  H01L24/16 ,  H01L24/73 ,  H01L2924/35121 ,  H01L2224/2402 ,  H01L2224/2405 ,  H01L2224/24226 ,  H01L2224/16058 ,  H01L2224/16059 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/73209

Abstract: A semiconductor package includes a die and a first lamination layer on the die with openings through the first lamination layer. A redistribution layer is on the first lamination layer and extends through the openings to the die. A plurality of conductive extensions are on the redistribution layer with each stud including a first surface on the redistribution layer, a second surface opposite to the first surface, and a sidewall between the first surface and the second surface. A second lamination layer is on the redistribution layer and the first lamination layer with the die encapsulated in molding compound. The second lamination layer is removed around the conductive extensions to expose the second surface and at least a portion of the sidewall of each stud to improve solder bond strength when mounting the package to a circuit board.

公开(公告)号：US11693149B2

公开(公告)日：2023-07-04

申请号：US17411948

申请日：2021-08-25

Applicant: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITED ,  STMICROELECTRONICS PTE LTD

Inventor： Wing Shenq Wong ,  Andy Price ,  Eric Christison

IPC: H01L25/16 ,  H01L31/167 ,  G01V8/12

CPC classification number: G01V8/12 ,  H01L25/167 ,  H01L31/167 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A method for forming a molded proximity sensor with an optical resin lens and the structure formed thereby. A light sensor chip is placed on a substrate, such as a printed circuit board, and a diode, such as a laser diode, is positioned on top of the light sensor chip and electrically connected to a bonding pad on the light sensor chip. Transparent, optical resin in liquid form is applied as a drop over the light sensor array on the light sensor chip as well as over the light-emitting diode. After the optical resin is cured, a molding compound is applied to an entire assembly, after which the assembly is polished to expose the lenses and have a top surface flush with the top surface of the molding compound.

公开(公告)号：US20230071048A1

公开(公告)日：2023-03-09

申请号：US18055138

申请日：2022-11-14

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Jing-En LUAN ,  Jerome TEYSSEYRE

IPC: G01S17/04 ,  H01L25/16 ,  G01S7/481 ,  H01L31/173

Abstract: A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.

公开(公告)号：US11585847B2

公开(公告)日：2023-02-21

申请号：US17826705

申请日：2022-05-27

Applicant: STMicroelectronics Pte Ltd

Inventor： Pedro Jr Santos Peralta ,  David Gani

IPC: G01R31/28 ,  H01L21/66 ,  G01R31/3185 ,  G01R31/26

Abstract: A method of testing an integrated circuit die (IC) for cracks includes performing an assembly process on a wafer including multiple ICs including: lowering a tip of a first manipulator arm to contact and pick up a given IC, flipping the given IC such that a surface of the IC facing the wafer faces a different direction, and transferring the IC to a tip of a second manipulator arm, applying pressure from the second manipulator arm to the given IC such that pogo pins extending from the tip of the first manipulator arm make electrical contact with conductive areas of the IC for connection to a crack detector on the IC, and performing a conductivity test on the crack detector using the pogo pins. If the conductivity test indicates a lack of presence of a crack, then the second manipulator arm is used to continue processing of the given IC.